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Effect of gamma radiation on electrical properties of diffusive memristor devices
Authors:
D. P. Pattnaik,
C. Andrews,
M. D. Cropper,
A. Balanov,
S. Saveliev,
P. Borisov
Abstract:
Diffusive memristors continue to receive tremendous interest due to their ability to emulate biological neurons and thus aid the development of bio-inspired computation technology. A major issue with the diffusive memristor is the inability to reliably control the formation of the conduction filaments which affects both the device functionality and reproducibility of regimes after each application…
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Diffusive memristors continue to receive tremendous interest due to their ability to emulate biological neurons and thus aid the development of bio-inspired computation technology. A major issue with the diffusive memristor is the inability to reliably control the formation of the conduction filaments which affects both the device functionality and reproducibility of regimes after each application of voltage. Here we investigate the effect of gamma radiation on the electrical properties of the diffusive memristors based on metallic nanoparticles in dielectric matrix. Our experiments show that after exposing to radiation, the memristors demonstrate much sharper (and less noisy) hysteresis in the current-voltage characteristics while preserving the same low- and high-resistive states as in the pristine samples. Additionally, the radiation lowers both threshold and hold voltages that correspond to onset of low- and high- resistive states, respectively. The proposed mechanism involves radiation-induced defects in the silica matrix which help to establish dominant pathways for nanoparticles to form conduction filaments. Our findings suggest an efficient way to enhance working characteristics of diffusive memristors and to improve their reproducibility.
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Submitted 22 March, 2023;
originally announced March 2023.
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SELLA -- A Program for Determining Bravais Lattice Types
Authors:
Lawrence C. Andrews,
Herbert J. Bernstein,
Nicholas K. Sauter
Abstract:
We introduce a new Bravais lattice determination algorithm. SELLA is a straight-forward algorithm and a program for determining Bravais lattice type based on Selling (Delone) reduction. It is a complete, closed solution, and it provides a clear metric of fit to each type.
We introduce a new Bravais lattice determination algorithm. SELLA is a straight-forward algorithm and a program for determining Bravais lattice type based on Selling (Delone) reduction. It is a complete, closed solution, and it provides a clear metric of fit to each type.
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Submitted 30 January, 2023;
originally announced March 2023.
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Delone lattice studies in C3, the space of three complex variables
Authors:
Lawrence C. Andrews,
Herbert J. Bernstein
Abstract:
The Delone (Selling) scalars, which are used in unit cell reduction and in lattice type determination, are studied in $\mathbb{C}^3$, the space of three complex variables. The three complex coordinate planes are composed of the six Delone scalars.
The Delone (Selling) scalars, which are used in unit cell reduction and in lattice type determination, are studied in $\mathbb{C}^3$, the space of three complex variables. The three complex coordinate planes are composed of the six Delone scalars.
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Submitted 8 March, 2023; v1 submitted 30 January, 2023;
originally announced February 2023.
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Measuring Lattices
Authors:
Lawrence C. Andrews,
Herbert J. Bernstein
Abstract:
Unit cells are used to represent crystallographic lattices. Calculations measuring the differences between unit cells are used to provide metrics for measuring meaningful distances between three-dimensional crystallographic lattices. This is a surprisingly complex and computationally demanding problem. We present a review of the current best practice using Delaunay-reduced unit cells in the six-di…
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Unit cells are used to represent crystallographic lattices. Calculations measuring the differences between unit cells are used to provide metrics for measuring meaningful distances between three-dimensional crystallographic lattices. This is a surprisingly complex and computationally demanding problem. We present a review of the current best practice using Delaunay-reduced unit cells in the six-dimensional real space of Selling scalar cells S6 and the equivalent three-dimensional complex space C3. The process is a simplified version of the process needed when working with the more complex six-dimensional real space of Niggli-reduced unit cells G6. Obtaining a distance begins with identification of the fundamental region in the space, continues with conversion to primitive cells and reduction, analysis of distances to the boundaries of the fundamental unit, and is completed by a comparison of direct paths to boundary-interrupted paths, looking for a path of minimal length.
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Submitted 24 January, 2023;
originally announced February 2023.
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An Invertible Seven-Dimensional Dirichlet Cell Characterization of Lattices
Authors:
Herbert J. Bernstein,
Lawrence C. Andrews,
Mario Xerri
Abstract:
Characterization of crystallographic lattices is an important tool in structure solution, crystallographic database searches and clustering of diffraction images in serial crystallography. Characterization of lattices by Niggli-reduced cells (based on the three shortest non-coplanar lattice edge vectors) or by Delaunay-reduced cells (based on four edge vectors summing to zero and all meeting at ob…
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Characterization of crystallographic lattices is an important tool in structure solution, crystallographic database searches and clustering of diffraction images in serial crystallography. Characterization of lattices by Niggli-reduced cells (based on the three shortest non-coplanar lattice edge vectors) or by Delaunay-reduced cells (based on four edge vectors summing to zero and all meeting at obtuse or right angles) are commonly used. The Niggli cell derives from Minkowski reduction. The Delaunay cell derives from Selling reduction. All are related to the Wigner-Seitz (or Dirichlet, or Voronoi) cell of the lattice, which consists of the points at least as close to a chosen lattice point than they are to any other lattice point. Starting from a Niggli-reduced cell, the Dirichlet cell is characterized by the planes determined by thirteen lattice half-edges: the midpoints of the three Niggli cell edges, the six Niggli cell face diagonals and the four body-diagonals, but seven of the edge lengths are sufficient: three edge lengths, the three shorter of each pair of face-diagonal lengths and the shortest body-diagonal length, from which the Niggli-reduced cell may be recovered.
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Submitted 25 December, 2022; v1 submitted 15 July, 2022;
originally announced August 2022.
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Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
Authors:
M. Wang,
C. Andrews,
S. Reimers,
O. J. Amin,
P. Wadley,
R. P. Campion,
S. F. Poole,
J. Felton,
K. W. Edmonds,
B. L. Gallagher,
A. W. Rushforth,
O. Makarovsky,
K. Gas,
M. Sawicki,
D. Kriegner,
J. Zubac,
K. Olejnik,
V. Novak,
T. Jungwirth,
M. Shahrokhvand,
U. Zeitler,
S. S. Dhesi,
F. Maccherozzi
Abstract:
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b…
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Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.
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Submitted 21 June, 2021; v1 submitted 27 November, 2019;
originally announced November 2019.
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Current-polarity dependent manipulation of antiferromagnetic domains
Authors:
P. Wadley,
S. Reimers,
M. J. Grzybowski,
C. Andrews,
M. Wang,
J. S. Chauhan,
B. L. Gallagher,
R. P. Campion,
K. W. Edmonds,
S. S. Dhesi,
F. Maccherozzi,
V. Novak,
J. Wunderlich,
T. Jungwirth
Abstract:
Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plan…
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Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plane current pulses were used to induce 90 degree rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry . Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using x-ray magnetic linear dichroism microscopy, and can also be detected electrically. The switching by domain wall motion can occur at much lower current densities than those needed for coherent domain switching.
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Submitted 14 November, 2017;
originally announced November 2017.
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Electrical switching of an antiferromagnet
Authors:
Peter Wadley,
Bryn Howells,
Jakub Zelezny,
Carl Andrews,
Victoria Hills,
Richard P. Campion,
Vit Novak,
Frank Freimuth,
Yuriy Mokrousov,
Andrew W. Rushforth,
Kevin W. Edmonds,
Bryan L. Gallagher,
Tomas Jungwirth
Abstract:
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the ke…
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Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the key which, as we show here, allows us to control antiferromagnets by electrical means analogous to those which paved the way to the development of ferromagnetic spintronics applications. The key noted by Neel is the equivalence of antiferromagnets and ferromagnets for effects that are an even function of the magnetic moment. Based on even-in-moment relativistic transport phenomena, we demonstrate room-temperature electrical switching between two stable configurations combined with electrical read-out in antiferromagnetic CuMnAs thin film devices. Our magnetic memory is insensitive to and produces no magnetic field perturbations which illustrates the unique merits of antiferromagnets for spintronics.
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Submitted 20 July, 2015; v1 submitted 12 March, 2015;
originally announced March 2015.
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The Geometry of Niggli Reduction III: SAUC -- Search of Alternate Unit Cells
Authors:
Keith J. McGill,
Mojgan Asadi,
Maria Toneva Karakasheva,
Lawrence C. Andrews,
Herbert J. Bernstein
Abstract:
A crystallographic cell is a representation of a lattice, but each lattice can be represented just as well by any of an infinite number of such unit cells. Searching for matches to an experimentally determined crystallographic unit cell in a large collection of previously determined unit cells is a useful verification step in synchrotron data collection and can be a screen for "similar" structures…
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A crystallographic cell is a representation of a lattice, but each lattice can be represented just as well by any of an infinite number of such unit cells. Searching for matches to an experimentally determined crystallographic unit cell in a large collection of previously determined unit cells is a useful verification step in synchrotron data collection and can be a screen for "similar" structures, but it is more useful to search for a match to the lattice represented by the experimentally determined cell. For identification of substances with small cells, a unit cell match may be sufficient for unique identification. Due to experimental error and multiple choices of cells and differing choices of lattice centering representing the same lattice, simple searches based on raw cell edges and angles can miss similarities among lattices. A database of lattices using the G6 representation of the Niggli-reduced cell as the search key provides a more robust and complete search. Searching is implemented by finding the distance from the probe cell to related cells using a topological embedding of the Niggli reduction in G6, so that all cells representing similar lattices will be found. Comparison of results with those from older cell-based search algorithms suggests significant value in the new approach.
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Submitted 9 July, 2013; v1 submitted 6 July, 2013;
originally announced July 2013.
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The Geometry of Niggli Reduction II: BGAOL -- Embedding Niggli Reduction
Authors:
Lawrence C. Andrews,
Herbert J. Bernstein
Abstract:
Niggli reduction can be viewed as a series of operations in a six-dimensional space derived from the metric tensor. An implicit embedding of the space of Niggli-reduced cells in a higher dimensional space to facilitate calculation of distances between cells is described. This distance metric is used to create a program, BGAOL, for Bravais lattice determination. Results from BGAOL are compared to t…
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Niggli reduction can be viewed as a series of operations in a six-dimensional space derived from the metric tensor. An implicit embedding of the space of Niggli-reduced cells in a higher dimensional space to facilitate calculation of distances between cells is described. This distance metric is used to create a program, BGAOL, for Bravais lattice determination. Results from BGAOL are compared to the results from other metric-based Bravais lattice determination algorithms.
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Submitted 28 May, 2013;
originally announced May 2013.
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The Geometry of Niggli Reduction I: The Boundary Polytopes of the Niggli Cone
Authors:
Lawrence C. Andrews,
Herbert J. Bernstein
Abstract:
Correct identification of the Bravais lattice of a crystal is an important step in structure solution. Niggli reduction is a commonly used technique. We investigate the boundary polytopes of the Niggli-reduced cone in the six-dimensional space G6 by algebraic analysis and organized random probing of regions near 1- through 8-fold boundary polytope intersections. We limit consideration of boundary…
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Correct identification of the Bravais lattice of a crystal is an important step in structure solution. Niggli reduction is a commonly used technique. We investigate the boundary polytopes of the Niggli-reduced cone in the six-dimensional space G6 by algebraic analysis and organized random probing of regions near 1- through 8-fold boundary polytope intersections. We limit consideration of boundary polytopes to those avoiding the mathematically interesting but crystallographically impossible cases of 0 length cell edges. Combinations of boundary polytopes without a valid intersection in the closure of the Niggli cone or with an intersection that would force a cell edge to 0 or without neighboring probe points are eliminated. 216 boundary polytopes are found: 15 5-D boundary polytopes of the full G6 Niggli cone, 53 4-D boundary polytopes resulting from intersections of pairs of the 15 5-D boundary polytopes, 79 3-D boundary polytopes resulting from 2-fold, 3-fold and 4-fold intersections of the 15 5-D boundary polytopes, 55 2-D boundary polytopes resulting from 2-fold, 3-fold, 4-fold and higher intersections of the 15 5-D boundary polytopes, 14 1-D boundary polytopes resulting from 3-fold and higher intersections of the 15 5-D boundary polytopes. All primitive lattice types can be represented as combinations of the 15 5-D boundary polytopes. All non-primitive lattice types can be represented as combinations of the 15 5-D boundary polytopes and of the 7 special-position subspaces of the 5-D boundary polytopes. This study provides a new, simpler and arguably more intuitive basis set for the classification of lattice characters and helps to illuminate some of the complexities in Bravais lattice identification. The classification is intended to help in organizing database searches and in understanding which lattice symmetries are "close" to a given experimentally determined cell.
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Submitted 8 August, 2013; v1 submitted 22 March, 2012;
originally announced March 2012.
