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Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors
Authors:
P. Majchrzak,
K. Volckaert,
A. G. Cabo,
D. Biswas,
M. Bianchi,
S. K. Mahatha,
M. Dendzik,
F. Andreatta,
S. S. Grønborg,
I. Marković,
J. M. Riley,
J. C. Johannsen,
D. Lizzit,
L. Bignardi,
S. Lizzit,
C. Cacho,
O. Alexander,
D. Matselyukh,
A. S. Wyatt,
R. T. Chapman,
E. Springate,
J. V. Lauritsen,
P. D. C. King,
C. E. Sanders,
J. A. Miwa
, et al. (2 additional authors not shown)
Abstract:
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing…
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The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.
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Submitted 31 March, 2021;
originally announced March 2021.
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Hot carrier-assisted switching of the electron-phonon interaction in 1$T$-VSe$_2$
Authors:
Paulina Majchrzak,
Sahar Pakdel,
Deepnarayan Biswas,
Alfred J. H. Jones,
Klara Volckaert,
Igor Marković,
Federico Andreatta,
Raman Sankar,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Charlotte E. Sanders,
Yu Zhang,
Gabriel Karras,
Richard T. Chapman,
Adam Wyatt,
Emma Springate,
Jill A. Miwa,
Philip Hofmann,
Phil D. C. King,
Nicola Lanata,
Young Jun Chang,
Søren Ulstrup
Abstract:
We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent…
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We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of $(200 \pm 40)$~fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasi-equilibrium state that is experimentally observed.
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Submitted 12 November, 2020;
originally announced November 2020.
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Ultrafast triggering of insulator-metal transition in two-dimensional VSe$_2$
Authors:
Deepnarayan Biswas,
Alfred J. H. Jones,
Paulina Majchrzak,
Byoung Ki Choi,
Tsung-Han Lee,
Klara Volckaert,
Jiagui Feng,
Igor Marković,
Federico Andreatta,
Chang-Jong Kang,
Hyuk Jin Kim,
In Hak Lee,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Charlotte E. Sanders,
Yu Zhang,
Gabriel Karras,
Richard T. Chapman,
Adam S. Wyatt,
Emma Springate,
Jill A. Miwa,
Philip Hofmann,
Phil D. C. King,
Young Jun Chang
, et al. (2 additional authors not shown)
Abstract:
Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulatin…
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Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulating phase with an anisotropic gap at the Fermi level, causing a suppression of anticipated 2D ferromagnetism in the material. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these electronic phases in SL VSe$_2$ using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap on a timescale of 480 fs, which we disentangle from the ensuing hot carrier dynamics. Our work thereby reveals that the phase transition in SL VSe$_2$ is driven by electron-lattice coupling and demonstrates the potential for controlling electronic phases in 2D materials with light.
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Submitted 27 July, 2020;
originally announced July 2020.
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Momentum-resolved linear dichroism in bilayer MoS$_2$
Authors:
Klara Volckaert,
Habib Rostami,
Deepnarayan Biswas,
Igor Marković,
Federico Andreatta,
Charlotte E. Sanders,
Paulina Majchrzak,
Cephise Cacho,
Richard T. Chapman,
Adam Wyatt,
Emma Springate,
Daniel Lizzit,
Luca Bignardi,
Silvano Lizzit,
Sanjoy K. Mahatha,
Marco Bianchi,
Nicola Lanata,
Phil D. C. King,
Jill A. Miwa,
Alexander V. Balatsky,
Philip Hofmann,
Søren Ulstrup
Abstract:
Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemissio…
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Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemission spectroscopy. We model the polarization-dependent photoemission intensity in the transiently-populated conduction band using the semiconductor Bloch equations and show that the observed dichroism emerges from intralayer single-particle effects within the isotropic part of the dispersion. This leads to optical excitations with an anisotropic momentum-dependence in an otherwise inversion symmetric material.
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Submitted 4 October, 2019;
originally announced October 2019.
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Transient Hot Electron Dynamics in Single-Layer TaS$_2$
Authors:
Federico Andreatta,
Habib Rostami,
Antonija Grubišić Čabo,
Marco Bianchi,
Charlotte E. Sanders,
Deepnarayan Biswas,
Cephise Cacho,
Alfred J. H. Jones,
Richard T. Chapman,
Emma Springate,
Phil D. C. King,
Jill A. Miwa,
Alexander Balatsky,
Søren Ulstrup,
Philip Hofmann
Abstract:
Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (ener…
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Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and $k$-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to 150 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.
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Submitted 23 January, 2019;
originally announced January 2019.
