Showing 1–6 of 6 results for author: Anderson, T J

Anisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design

Authors: T. Nan, T. J. Anderson, J. Gibbons, K. Hwang, N. Campbell, H. Zhou, Y. Q. Dong, G. Y. Kim, N. Reynolds, X. J. Wang, N. X. Sun, S. Y. Choi, M. S. Rzchowski, Yong Baek Kim, D. C. Ralph, C. B. Eom

Abstract: Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition m… ▽ More Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO3. We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO3 arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO3 through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO3 with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5d transition-metal oxide thin films can be an ideal building block for low-power spintronics. △ Less

Submitted 20 August, 2018; originally announced August 2018.

Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells

Authors: Christopher P. Muzzillo, Timothy J. Anderson

Abstract: Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu1-xKxIn1-yGaySe2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn1-yGaySe2 absorbers with KIn1-yGaySe2 grown on their surfaces. For the Ga-free case, increased temperature improved PV performance in the KInSe2 surface absorbers, but not in the bu… ▽ More Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu1-xKxIn1-yGaySe2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn1-yGaySe2 absorbers with KIn1-yGaySe2 grown on their surfaces. For the Ga-free case, increased temperature improved PV performance in the KInSe2 surface absorbers, but not in the bulk x ~ 0.07 absorbers. Growth temperature also increased KInSe2 phase fraction, relative to Cu1-xKxInSe2 alloys-evidence that surface KInSe2 improved performance more than bulk KInSe2. Surface KIn1-yGaySe2 and bulk x ~ 0.07 Cu1-xKxIn1-yGaySe2 films with Ga/(Ga+In), or y of 0.3 and 0.5 also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF), relative to CuIn1-yGaySe2 baselines. On the other hand, y ~ 1 absorbers did not benefit from K introduction. Similar to Cu1-xKxInSe2, the formation of Cu1-xKxGaSe2 alloys was favored at low temperatures and high substrate Na content, relative to the formation of mixed-phase CuGaSe2 + KGaSe2. KIn1-yGaySe2 alloys were grown for the first time, as evidenced by X-ray diffraction and ultraviolet/visible spectroscopy. For all Ga/(Ga+In) compositions, the surface KIn1-yGaySe2 absorbers had superior PV performance in buffered and buffer-free devices. However, the bulk x ~ 0.07 absorbers only outperformed the baselines in buffered devices. The data demonstrate that KIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency, VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x ~ 0.07 enhance efficiency, VOC, and FF by some other mechanism. △ Less

Submitted 18 March, 2017; originally announced April 2017.

Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells

Authors: Christopher P. Muzzillo, Jian V. Li, Lorelle M. Mansfield, Kannan Ramanathan, Timothy J. Anderson

Abstract: To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIGS) photovoltaic (PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PV performance. First, the effect of distributing K throughout bulk Cu1-xKxInSe2 absorbers at low K/(K+Cu) compositions (0 <= x <= 0.30) was studied. Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatly enhanced for x ~ 0.07, re… ▽ More To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIGS) photovoltaic (PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PV performance. First, the effect of distributing K throughout bulk Cu1-xKxInSe2 absorbers at low K/(K+Cu) compositions (0 <= x <= 0.30) was studied. Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatly enhanced for x ~ 0.07, resulting in an officially-measured 15.0%-efficient solar cell, matching to the world record CuInSe2 efficiency. The improvements were a result of reduced interface and bulk recombination, relative to CuInSe2 (x ~ 0). However, higher x compositions had reduced efficiency, short-circuit current density (JSC), and FF due to greatly increased interface recombination, relative to the x ~ 0 baseline. Next, the effect of confining K at the absorber/buffer interface at high K/(K+Cu) compositions (0.30 <= x <= 0.92) was researched. Previous work showed that these surface layer growth conditions produced CuInSe2 with a large phase fraction of KInSe2. After optimization (75 nm surface layer with x ~ 0.41), these KInSe2 surface samples exhibited increased efficiency (officially 14.9%), VOC, and FF as a result of decreased interface recombination. The KInSe2 surfaces had features similar to previous reports for KF post-deposition treatments (PDTs) used in world record CIGS solar cells-taken as indirect evidence that KInSe2 can form during these PDTs. Both the bulk and surface growth processes greatly reduced interface recombination. However, the KInSe2 surface had higher K levels near the surface, greater lifetimes, and increased inversion near the buffer interface, relative to the champion bulk CKIS absorber. These characteristics demonstrate that K may benefit PV performance by different mechanisms at the surface and in the absorber bulk. △ Less

Submitted 18 March, 2017; originally announced April 2017.

The Effect of Temperature on Cu-K-In-Se Thin Films

Authors: Christopher P. Muzzillo, Ho Ming Tong, Timothy J. Anderson

Abstract: Films of Cu-K-In-Se were co-evaporated at varied K/(K+Cu) compositions and substrate temperatures (with constant (K+Cu)/In ~ 0.85). Increased Na composition on the substrate's surface and decreased growth temperature were both found to favor Cu1-xKxInSe2 (CKIS) alloy formation, relative to mixed-phase CuInSe2 + KInSe2 formation. Structures from X-ray diffraction (XRD), band gaps, resistivities, mi… ▽ More Films of Cu-K-In-Se were co-evaporated at varied K/(K+Cu) compositions and substrate temperatures (with constant (K+Cu)/In ~ 0.85). Increased Na composition on the substrate's surface and decreased growth temperature were both found to favor Cu1-xKxInSe2 (CKIS) alloy formation, relative to mixed-phase CuInSe2 + KInSe2 formation. Structures from X-ray diffraction (XRD), band gaps, resistivities, minority carrier lifetimes and carrier concentrations from time-resolved photoluminescence were in agreement with previous reports, where low K/(K+Cu) composition films exhibited properties promising for photovoltaic (PV) absorbers. Films grown at 400-500 C were then annealed to 600 C under Se, which caused K loss by evaporation in proportion to initial K/(K+Cu) composition. Similar to growth temperature, annealing drove CKIS alloy consumption and CuInSe2 + KInSe2 production, as evidenced by high temperature XRD. Annealing also decomposed KInSe2 and formed K2In12Se19. At high temperature the KInSe2 crystal lattice gradually contracted as temperature and time increased, as well as just time. Evaporative loss of K during annealing could accompany the generation of vacancies on K lattice sites, and may explain the KInSe2 lattice contraction. This knowledge of Cu-K-In-Se material chemistry may be used to predict and control minor phase impurities in Cu(In,Ga)(Se,S)2 PV absorbers-where impurities below typical detection limits may have played a role in recent world record PV efficiencies that utilized KF post-deposition treatments. △ Less

Submitted 18 March, 2017; originally announced March 2017.

The Effect of Na on Cu-K-In-Se Thin Film Growth

Authors: Christopher P. Muzzillo, Ho Ming Tong, Timothy J. Anderson

Abstract: Co-evaporation of Cu-KF-In-Se was performed on substrates with varied surface Na compositions. Compositions of interest for photovoltaic absorbers were studied, with ratios of (K+Cu)/In ~ 0.85 and K/(K+Cu) ~ 0 - 0.57. Soda-lime glass (SLG) substrates led to the most Na by secondary ion mass spectrometry, while SLG/Mo and SLG/SiO2/Mo substrates led to 3x and 3,000x less Na in the growing film, resp… ▽ More Co-evaporation of Cu-KF-In-Se was performed on substrates with varied surface Na compositions. Compositions of interest for photovoltaic absorbers were studied, with ratios of (K+Cu)/In ~ 0.85 and K/(K+Cu) ~ 0 - 0.57. Soda-lime glass (SLG) substrates led to the most Na by secondary ion mass spectrometry, while SLG/Mo and SLG/SiO2/Mo substrates led to 3x and 3,000x less Na in the growing film, respectively. Increased Na content favored Cu1-xKxInSe2 (CKIS) alloy formation by X-ray diffraction (XRD), while decreased Na favored the formation of CuInSe2 + KInSe2 mixed-phase films. Scanning electron microscopy and energy dispersive X-ray spectroscopy revealed the KInSe2 precipitates to be readily recognizable planar crystals. Extrinsic KF addition also drove diffusion of Na out from the various substrates and into the growing film, in agreement with previous reports. Time-resolved photoluminescence showed enhanced minority carrier lifetimes for films with moderate K compositions (0.04 < K/(K+Cu) < 0.14) grown on Mo. Due to the relatively high detection limit of KInSe2 by XRD and the low magnitude of chalcopyrite lattice shift for CKIS alloys with these compositions, it is unclear if the lifetime gains were associated with CKIS alloying, minor KInSe2 content, or both. The identified Na-K interdependency can be used to engineer alkali metal bonding in Cu(In,Ga)(Se,S)2 absorbers to optimize both initial and long-term photovoltaic power generation. △ Less

Submitted 18 March, 2017; originally announced March 2017.

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Authors: Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson, Glenn G. Jernigan, Karl D. Hobart, Fritz J. Kub, Marko J. Tadjer, Joseph L. Tedesco, Jennifer K. Hite, Michael A. Mastro, Rachael L. Myers-Ward, Charles R. Eddy Jr., Paul M. Campbell, D. Kurt Gaskill

Abstract: In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr… ▽ More In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts. △ Less

Submitted 14 October, 2009; originally announced October 2009.

Comments: 8 pages, 4 figures and supplementary info regarding procedure for transfer

Journal ref: ACS Nano 4(2), 1108-1114 (2010)