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Over One Order of Magnitude Enhancement in Hole Mobility of 2D III-V Semiconductors through Valence Band Edge Shift
Authors:
Jianshi Sun,
Shouhang Li,
Cheng Shao,
Zhen Tong,
Meng An,
Yue Hu,
Xiongfei Zhu,
Thomas Frauenheim,
Xiangjun Liu
Abstract:
Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constrained by low hole mobility. In this work, we take 2D-GaAs as a prototype of III-V semiconductors to investigate the effects of quantum anharmonicity (QA) on hole transport, employing the stochastic self-consistent harmonic a…
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Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constrained by low hole mobility. In this work, we take 2D-GaAs as a prototype of III-V semiconductors to investigate the effects of quantum anharmonicity (QA) on hole transport, employing the stochastic self-consistent harmonic approximation assisted by the machine learning potential. It is found that the room-temperature hole mobility of 2D-GaAs is reduced by $\sim$44% as the QA effects are incorporated, which is attributed to the enhanced electron-phonon scattering from the out-of-plane acoustic polarization. The valence band edge shift (VBES) strategy is proposed to increase the hole mobility by $\sim$1600% at room temperature, which can be realized by 1% biaxial compressive strain. The electron-phonon scattering rate is dramatically decreased due to the full filtering of the original interband electron-phonon scattering channels that existed in the flat hole pocket. The VBES strategy can be further extended to other 2D III-V semiconductors to promote their hole mobilities.
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Submitted 15 September, 2025;
originally announced September 2025.
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In situ and real-time ultrafast spectroscopy of photoinduced reactions in perovskite nanomaterials
Authors:
Gi Rim Han,
Mai Ngoc An,
Hyunmin Jang,
Noh Soo Han,
JunWoo Kim,
Kwang Seob Jeong,
Tai Hyun Yoon,
Minhaeng Cho
Abstract:
Employing two synchronized mode-locked femtosecond lasers and interferometric detection of the pump-probe spectra -- referred to as asynchronous and interferometric transient absorption (AI-TA) -- we have developed a method for broad dynamic range and rapid data acquisition. Using AI-TA, we examined photochemical changes during femtosecond pump-probe experiments on all-inorganic cesium lead halide…
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Employing two synchronized mode-locked femtosecond lasers and interferometric detection of the pump-probe spectra -- referred to as asynchronous and interferometric transient absorption (AI-TA) -- we have developed a method for broad dynamic range and rapid data acquisition. Using AI-TA, we examined photochemical changes during femtosecond pump-probe experiments on all-inorganic cesium lead halide nanomaterials, including perovskite nanocrystals (PeNCs) and nanoplatelets (PeNPLs). The laser pulse train facilitates photoreactions while allowing real-time observation of charge carrier dynamics. In PeNCs undergoing halide anion photo-substitution, transient absorption spectra showed increasing bandgap energy and faster relaxation dynamics as the Cl/Br ratio increased. For colloidal PeNPLs, continuous observation revealed both spectral and kinetic changes during the light-induced coalescence of nanoplatelets, by analyzing temporal segments. This integrated technique not only deepens understanding of exciton dynamics and environmental influences in perovskite nanomaterials but also establishes AI-TA as a transformative tool for real-time observation of photochemical dynamics.
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Submitted 3 April, 2025;
originally announced April 2025.
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Softening of Vibrational Modes and Anharmonicity Induced Thermal Conductivity Reduction in a-Si:H at High Temperatures
Authors:
Zhuo Chen,
Yuejin Yuan,
Yanzhou Wang,
Penghua Ying,
Shouhang Li,
Cheng Shao,
Wenyang Ding,
Gang Zhang,
Meng An
Abstract:
Hydrogenated amorphous silicon (a-Si:H) has garnered considerable attention in the semiconductor industry, particularly for its use in solar cells and passivation layers for high performance silicon solar cells, owing to its exceptional photoelectric properties and scalable manufacturing processes. A comprehensive understanding of thermal transport mechanism in a-Si:H is essential for optimizing t…
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Hydrogenated amorphous silicon (a-Si:H) has garnered considerable attention in the semiconductor industry, particularly for its use in solar cells and passivation layers for high performance silicon solar cells, owing to its exceptional photoelectric properties and scalable manufacturing processes. A comprehensive understanding of thermal transport mechanism in a-Si:H is essential for optimizing thermal management and ensuring the reliable operation of these devices. In this study, we developed a neuroevolution machine learning potential based on first-principles calculations of energy, forces, and virial, which enables accurate modeling of interatomic interactions in both a-Si:H and a-Si systems. Using the homogeneous nonequilibrium molecular dynamics (HNEMD) method, we systematically investigated the thermal conductivity of a-Si:H and a-Si across a temperature range of 300-1000 K and hydrogen concentrations ranging from 6 to 12 at%. Our simulation results found that thermal conductivity of a-Si:H with 12 at% hydrogen was significantly reduced by 12% compared to that of a-Si at 300 K. We analyzed the spectral thermal conductivity, vibrational density of states and lifetimes of vibrational modes, and revealed the softening of vibrational modes and anharmonicity effects contribute to the reduction of thermal conductivity as temperature and hydrogen concentration increase. Furthermore, the influence of hydrogen concentration and temperature on diffuson and propagon contribution to thermal conductivity of a-Si:H was revealed. This study provides valuable insights for developing thermal management strategies in silicon-based semiconducting devices and advances the understanding of thermal transport in amorphous systems.
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Submitted 12 February, 2025; v1 submitted 8 February, 2025;
originally announced February 2025.
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Hyperparameter Optimization and Force Error Correction of Neuroevolution Potential for Predicting Thermal Conductivity of Wurtzite GaN
Authors:
Zhuo Chen,
Yuejin Yuan,
Wenyang Ding,
Shouhang Li,
Meng An,
Gang Zhang
Abstract:
As a representative of wide-bandgap semiconductors, wurtzite gallium nitride (GaN) has been widely utilized in high-power devices due to high breakdown voltage and low specific on resistance. Accurate prediction of wurtzite GaN thermal conductivity is a prerequisite for designing effective thermal management systems of electronic applications. Machine learning driven molecular dynamics simulation…
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As a representative of wide-bandgap semiconductors, wurtzite gallium nitride (GaN) has been widely utilized in high-power devices due to high breakdown voltage and low specific on resistance. Accurate prediction of wurtzite GaN thermal conductivity is a prerequisite for designing effective thermal management systems of electronic applications. Machine learning driven molecular dynamics simulation offers a promising approach to predicting the thermal conductivity of large-scale systems without requiring predefined parameters. However, these methods often underestimate the thermal conductivity of materials with inherently high thermal conductivity due to the large predicted force error compared with first-principle calculation, posing a critical challenge for their broader application. In this study, we successfully developed a neuroevolution potential for wurtzite GaN and accurately predicted its thermal conductivity, 259 W/m-K at room temperatue, achieving excellent agreement with reported experimental measurements. The hyperparameters of neuroevolution potential (NEP) were optimized based on systematic analysis of reproduced energy and force, structural feature, computational efficiency. Furthermore, a force prediction error correction method was implemented, effectively reducing the error caused by the additional force noise in the Langevin thermostat by extrapolating to the zero-force error limit. This study provides valuable insights and hold significant implication for advancing efficient thermal management technologies in wide bandgap semiconductor devices.
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Submitted 12 February, 2025; v1 submitted 8 February, 2025;
originally announced February 2025.
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Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain
Authors:
Jianshi Sun,
Shouhang Li,
Cheng Shao,
Zhen Tong,
Meng An,
Yuhang Yao,
Yue Hu,
Xiongfei Zhu,
Yifan Liu,
Renzong Wang,
Xiangjun Liu,
Thomas Frauenheim
Abstract:
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear str…
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As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear strain along the [100] direction, while the improvement via shear strain along the [111] direction is marginal. This impressive distinction is attributed to the deformation potential and the elastic compliance matrix. The shear strain breaks the symmetry of the crystalline structure and lifts the band degeneracy near the valence band edge, resulting in a significant suppression of interband electron-phonon scattering. Moreover, the hole mobility becomes less temperature-dependent due to the decrease of electron scatterings from high-frequency acoustic phonons. Remarkably, the in-plane hole mobility of diamond is increased by approximately 800% at 800 K with a 2% compressive shear strain along the [100] direction. The efficient shear strain strategy can be further extended to other semiconductors with face-centered cubic geometry.
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Submitted 25 October, 2024;
originally announced October 2024.
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Diverse Responses in Lattice Thermal Conductivity of $n$-type/$p$-type Semiconductors Driven by Asymmetric Electron-Phonon Interactions
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Han Xie,
Meng An,
Chuang Zhang,
Xiongfei Zhu,
Chen Huang,
Yucheng Xiong,
Xiangjun Liu
Abstract:
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-…
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Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-level first-principles calculations. It is found that EPI has a larger effect on the lattice thermal conductivity of $p$-type doping compared to $n$-type doping in the same semiconductor at high charge carrier concentrations. The stronger EPI in $p$-type doping is attributed to the relatively higher electron density of states caused by the relatively larger $p$-orbital component. Furthermore, EPI has a stronger influence on the lattice thermal conductivity of $n$-type indirect bandgap semiconductors than $n$-type direct bandgap semiconductors. This is attributed to the relatively lower electron density of states in direct bandgap semiconductors stemming from the $s$-orbital component. This work reveals that there exist diverse responses in lattice thermal conductivity of $n$-type/$p$-type semiconductors, which can be attributed to asymmetric EPIs.
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Submitted 17 June, 2024;
originally announced June 2024.
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Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Meng An,
Xiongfei Zhu,
Chuang Zhang,
Xiangchuan Chen,
Yucheng Xiong,
Thomas Frauenheim,
Xiangjun Liu
Abstract:
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressi…
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4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed, and the out-of-plane hole mobility of 4H-SiC can be enhanced by 200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.
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Submitted 20 June, 2024; v1 submitted 4 June, 2024;
originally announced June 2024.
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Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Xiangchuan Chen,
Qianqian Liu,
Yucheng Xiong,
Meng An,
Xiangjun Liu
Abstract:
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy doping. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fröhlich inter…
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Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy doping. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fröhlich interaction. Surprisingly, our investigation reveals weak effects of electron-phonon interactions on the lattice thermal conductivity of n-type GaN at ultra-high electron concentrations and the impact of the Fröhlich interaction can be ignored. The small phonon-electron scattering rate is attributed to the limited scattering channels, quantified by the Fermi surface nesting function. In contrast, there is a significant reduction in the lattice thermal conductivity of p-type GaN at high hole concentrations due to the relatively larger Fermi surface nesting function. Meanwhile, as p-type GaN has relatively smaller electron-phonon matrix elements, the reduction in lattice thermal conductivity is still weaker than that observed in p-type silicon. Our work provides a deep understanding of thermal transport in doped GaN and the conclusions can be further extended to other wide-bandgap semiconductors, including $β$-Ga2O3, AlN, and ZnO.
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Submitted 5 May, 2024; v1 submitted 4 January, 2024;
originally announced January 2024.
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Structural dimerization and charge-orbital ordering in a ferromagnetic semiconductor LiV2S4 monolayer
Authors:
Rui Song,
Bili Wang,
Kai Feng,
Jia Yao,
Mengjie Lu,
Jing Bai,
Shuai Dong,
Ming An
Abstract:
With the rise of two-dimensional (2D) materials, unique properties that are completely distinct from bulk counterparts continue to emerge at low-dimensional scales, presenting numerous opportunities and challenges. It also provides a new perspective for the study of transition metal system. Here, based on density functional theory (DFT), the physical properties of 2D monolayer LiV2S4 have been stu…
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With the rise of two-dimensional (2D) materials, unique properties that are completely distinct from bulk counterparts continue to emerge at low-dimensional scales, presenting numerous opportunities and challenges. It also provides a new perspective for the study of transition metal system. Here, based on density functional theory (DFT), the physical properties of 2D monolayer LiV2S4 have been studied. Remarkable changes have been observed, i.e., vanadium dimerization, ferromagnetism, charge distribution and metal-insulator transition (MIT). It is argued that the electronic instability leads to the V dimerization which further lifts the degeneracy of charge distribution and stabilizes the charge and spin ordering state.
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Submitted 15 December, 2023;
originally announced December 2023.
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Adsorption tuning of polarity and magnetism in AgCr2S4 monolayer
Authors:
Ranran Li,
Yu Wang,
Ning Ding,
Shuai Dong,
Ming An
Abstract:
As a recent successfully exfoliated non van der Waals layered material, AgCrS2 has received a lot of attentions. Motivated by its structure related magnetic and ferroelectric behavior, a theoretical study on its exfoliated monolayer AgCr2S4 has been carried out in the present work. Based on density functional theory, the ground state and magnetic order of monolayer AgCr2S4 have been determined. Th…
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As a recent successfully exfoliated non van der Waals layered material, AgCrS2 has received a lot of attentions. Motivated by its structure related magnetic and ferroelectric behavior, a theoretical study on its exfoliated monolayer AgCr2S4 has been carried out in the present work. Based on density functional theory, the ground state and magnetic order of monolayer AgCr2S4 have been determined. The centrosymmetry emerges upon two-dimensional confinement and thus eliminates the bulk polarity. Moreover, two-dimensional ferromagnetism appears in the CrS2 layer of AgCr2S4 and can persist up to room temperature. The surface adsorption has also been taken into consideration, which shows a nonmonotonic effect on the ionic conductivity through ion displacement of the interlayer Ag, but has little impact on the layered magnetic structure.
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Submitted 12 April, 2023; v1 submitted 11 April, 2023;
originally announced April 2023.
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Electrical tuning of robust layered antiferromagnetism in MXene monolayer
Authors:
Xinyu Yang,
Ning Ding,
Jun Chen,
Ziwen Wang,
Ming An,
Shuai Dong
Abstract:
A-type antiferromagnetism, with an in-plane ferromagnetic order and the interlayer antiferromagnetic coupling, owns inborn advantages for electrical manipulations but is naturally rare in real materials except in those artificial antiferromagnetic heterostructures. Here, a robust layered antiferromagnetism with a high Néel temperature is predicted in a MXene Cr$_2$CCl$_2$ monolayer, which provides…
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A-type antiferromagnetism, with an in-plane ferromagnetic order and the interlayer antiferromagnetic coupling, owns inborn advantages for electrical manipulations but is naturally rare in real materials except in those artificial antiferromagnetic heterostructures. Here, a robust layered antiferromagnetism with a high Néel temperature is predicted in a MXene Cr$_2$CCl$_2$ monolayer, which provides an ideal platform as a magnetoelectric field effect transistor. Based on first-principles calculations, we demonstrate that an electric field can induce the band splitting between spin-up and spin-down channels. Although no net magnetization is generated, the inversion symmetry between the lower Cr layer and the upper Cr layer is broken via electronic cloud distortions. Moreover, this electric field can be replaced by a proximate ferroelectric layer for nonvolatility. The magneto-optic Kerr effect can be used to detect this magnetoelectricity, even if it is a collinear antiferromagnet with zero magnetization.
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Submitted 17 April, 2023; v1 submitted 10 April, 2023;
originally announced April 2023.
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Ferroelectric control of spin-polarized two-dimensional electron gas
Authors:
Yakui Weng,
Wei Niu,
Xin Huang,
Ming An,
Shuai Dong
Abstract:
Spin-polarized two-dimensional electron gas (2DEG) at oxide interfaces is an emerging physical phenomenon, which is technologically important for potential device applications. However, most previous relevant studies only focused on the creation and characterization of the spin-polarized 2DEG. To push forward the device applications, the control of spin-polarized 2DEG by electric field is an impor…
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Spin-polarized two-dimensional electron gas (2DEG) at oxide interfaces is an emerging physical phenomenon, which is technologically important for potential device applications. However, most previous relevant studies only focused on the creation and characterization of the spin-polarized 2DEG. To push forward the device applications, the control of spin-polarized 2DEG by electric field is an important step. Here, a model system based on antiferromagnetic and ferroelectric perovskites, i.e., YTiO3/PbTiO3 superlattice, is designed to manipulate the spin-polarized 2DEG. By switching the direction of polarization, the spin-polarized 2DEG can be effectively tuned for both symmetric interfaces and asymmetric polar interfaces.
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Submitted 27 October, 2021;
originally announced October 2021.
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Multiferroic properties of oxygen functionalized magnetic i-MXene
Authors:
Mingyu Zhao,
Jun Chen,
Shan-Shan Wang,
Ming An,
Shuai Dong
Abstract:
Two dimensional multiferroics inherit prominent physical properties from both low dimensional materials and magnetoelectric materials, and can go beyond their three dimensional counterparts for their unique structures. Here, based on density functional theory calculations, a MXene derivative, i.e., i-MXene (Ta$_{2/3}$Fe$_{1/3}$)$_2$CO$_2$, is predicted to be a type-I multiferroic material. Origina…
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Two dimensional multiferroics inherit prominent physical properties from both low dimensional materials and magnetoelectric materials, and can go beyond their three dimensional counterparts for their unique structures. Here, based on density functional theory calculations, a MXene derivative, i.e., i-MXene (Ta$_{2/3}$Fe$_{1/3}$)$_2$CO$_2$, is predicted to be a type-I multiferroic material. Originated from the reliable $5d^0$ rule, its ferroelectricity is robust, with a moderate polarization up to $\sim12.33$ $μ$C/cm$^2$ along the a-axis, which can be easily switched and may persist above room temperature. Its magnetic ground state is layered antiferromagnetism. Although it is a type-I multiferroic material, its Néel temperature can be significantly tuned by the paraelectric-ferroelectric transition, manifesting a kind of intrinsic magnetoelectric coupling. Such magnetoelectric effect is originated from the conventional magnetostriction, but unexpectedly magnified by the exchange frustration. Our work not only reveals a nontrivial magnetoelectric mechanism, but also provides a strategy to search for more multiferroics in the two dimensional limit.
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Submitted 3 September, 2021;
originally announced September 2021.
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Ferroelectricity in strained Hf$_2$CF$_2$ monolayer
Authors:
Ziwen Wang,
Ning Ding,
Churen Gui,
Shanshan Wang,
Ming An,
Shuai Dong
Abstract:
Low dimensional ferroelectrics are highly desired for applications and full of exotic physics. Here a functionalized MXene Hf$_2$CF$_2$ monolayer is theoretically studied, which manifests a nonpolar to polar transition upon moderate biaxial compressive strain. Accompanying this structural transition, a metal-semiconductor transition occurs. The in-plane shift of unilateral fluorine layer leads to…
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Low dimensional ferroelectrics are highly desired for applications and full of exotic physics. Here a functionalized MXene Hf$_2$CF$_2$ monolayer is theoretically studied, which manifests a nonpolar to polar transition upon moderate biaxial compressive strain. Accompanying this structural transition, a metal-semiconductor transition occurs. The in-plane shift of unilateral fluorine layer leads to a polarization pointing out-of-plane. Such ferroelectricity is unconventional, similar to the recently-proposed interlayer-sliding ferroelectricity but not identical. Due to its specific hexapetalous potential energy profile, the possible ferroelectric switching paths and domain walls are nontrivial, which are mediated via the metallic paraelectric state. In this sense, the metallic walls can be manipulated by reshaping the ferroelectric domains.
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Submitted 15 November, 2021; v1 submitted 10 July, 2021;
originally announced July 2021.
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Directly Visualizing the Crossover from Incoherent to Coherent Phonons in Two-dimensional Periodic MoS2/MoSe2 Arrayed Heterostructure
Authors:
Meng An,
Dongsheng Chen,
Weigang Ma,
Shiqian Hu,
Xing Zhang
Abstract:
Recently, massive efforts have been done on controlling thermal transport via coherent phonons in the various periodic nanostructures. However, the intrinsic lattice difference between the constituent materials inevitably generates the disorder at the interfaces, thus limiting the opportunity of directly observing the coherent phonon transport. Here, we investigate the controllability and visualiz…
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Recently, massive efforts have been done on controlling thermal transport via coherent phonons in the various periodic nanostructures. However, the intrinsic lattice difference between the constituent materials inevitably generates the disorder at the interfaces, thus limiting the opportunity of directly observing the coherent phonon transport. Here, we investigate the controllability and visualization of the coherent phonon transport in a periodic MoS2/MoSe2 arrayed heterostructure with minimum lattice mismatching using non-equilibrium molecular dynamics simulation. It is found that the coherent phonon transport can be destroyed and rebuilt through adjusting the density of MoSe2 nanodot arrays. The phonon localization induced by the destruction of correlation is visualized based on the spatial energy distribution and anharmonic analysis. Furthermore, the eigen vector diagrams provide a distinct visualization of the localized phonon modes. Besides, the correlation of phonon can be rebuilt by reducing the period length, which is verified by the enhanced group velocities extracted from phonon dispersion curves. Interestingly, the crossover from incoherent to coherent phonon transport is directly observed by the spatial energy distributions and the spectral phonon transmission coefficients. Finally, the size and temperature dependence of thermal conductivity are also discussed. This study of the phonon coherence and its visualizing manipulation on thermal conductivity will be beneficial to fine heat control and management in the real applications.
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Submitted 2 June, 2021;
originally announced June 2021.
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Peierls transition driven ferroelasticity in two-dimensional $d$-$f$ hybrid magnet
Authors:
Haipeng You,
Yang Zhang,
Jun Chen,
Ning Ding,
Ming An,
Lin Miao,
Shuai Dong
Abstract:
For broad nanoscale applications, it is crucial to implement more functional properties, especially those ferroic orders, into two-dimensional materials. Here GdI$_3$ is theoretically identified as a honeycomb antiferromagnet with large $4f$ magnetic moment. The intercalation of metal atoms can dope electrons into Gd's $5d$-orbitals, which alters its magnetic state and lead to Peierls transition.…
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For broad nanoscale applications, it is crucial to implement more functional properties, especially those ferroic orders, into two-dimensional materials. Here GdI$_3$ is theoretically identified as a honeycomb antiferromagnet with large $4f$ magnetic moment. The intercalation of metal atoms can dope electrons into Gd's $5d$-orbitals, which alters its magnetic state and lead to Peierls transition. Due to the strong electron-phonon coupling, the Peierls transition induces prominent ferroelasticity, making it a multiferroic system. The strain from undirectional stretching can be self-relaxed via resizing of triple ferroelastic domains, which can protect the magnet aganist mechnical breaking in flexible applications.
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Submitted 13 April, 2021;
originally announced April 2021.
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Thermal Conductivities and Mechanical Properties of Epoxy Resin as a Function of the Degree of Cross-linking
Authors:
Xiao Wan,
Baris Demir,
Meng An,
Tiffany R. Walsh,
Nuo Yang
Abstract:
Epoxy resins are widely used polymer matrices for numerous applications. Despite substantial advances, the molecular-level knowledge-base required to exploit these materials to their full potential remains limited. A deeper comprehension of structure/property relationships in epoxy resins at the molecular level is critical to progressing these efforts. It can be laborious, if not impractical, to e…
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Epoxy resins are widely used polymer matrices for numerous applications. Despite substantial advances, the molecular-level knowledge-base required to exploit these materials to their full potential remains limited. A deeper comprehension of structure/property relationships in epoxy resins at the molecular level is critical to progressing these efforts. It can be laborious, if not impractical, to elucidate these relationships based on experiments alone. Here, molecular dynamics simulations are used to calculate and compare thermal conductivities and mechanical properties of an exemplar epoxy resin, Bisphenol F cross-linked with Diethyl Toluene Diamine, revealing these inter-relationships. Both elastic modulus and thermal transport of the epoxy resin show an increase with greater cross-linking. Specifically, decomposition of the thermal conductivity into different force contributions suggests that the bonded term contributes to an increase in the heat flux. These outcomes provide a foundation for designing and fabricating customized epoxy resins with desirable thermal and mechanical attributes.
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Submitted 6 April, 2021;
originally announced April 2021.
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Ferroic orders in two-dimensional transition/rare-earth metal halides
Authors:
Ming An,
Shuai Dong
Abstract:
Since the discovery of graphene, two-dimensional materials with atomic level thickness have rapidly grown to be a prosperous field of physical science with interdisciplinary interests, for their fascinating properties and broad applications. Very recently, the experimental observation of ferromagnetism in Cr$_2$Ge$_2$Te$_6$ bilayer and CrI$_3$ monolayer opened a door to pursuit long-absent intrins…
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Since the discovery of graphene, two-dimensional materials with atomic level thickness have rapidly grown to be a prosperous field of physical science with interdisciplinary interests, for their fascinating properties and broad applications. Very recently, the experimental observation of ferromagnetism in Cr$_2$Ge$_2$Te$_6$ bilayer and CrI$_3$ monolayer opened a door to pursuit long-absent intrinsic magnetic orders in two-dimensional materials. Meanwhile, the ferroelectricity was also experimentally found in SnTe monolayer and CuInP$_2$S$_6$ few layers. The emergence of these ferroic orders in the two-dimensional limit not only brings new challenges to our physical knowledge, but also provides more functionalities for potential applications. Among various two-dimensional ferroic ordered materials, transition/rare-earth metal halides and their derivants are very common. In this Research Update, based on transition/rare-earth metal halides, the physics of various ferroic orders in two-dimensional will be illustrated. The potential applications based on their magnetic and polar properties will also be discussed.
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Submitted 2 November, 2020;
originally announced November 2020.
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Phonon Magic Angle in Two-Dimensional Puckered Homostructures
Authors:
Yufeng Zhang,
Meng An,
Dongxing Song,
Haidong Wang,
Weigang Ma,
Xing Zhang
Abstract:
The emergence of twistronics provides an unprecedented platform to modulate the band structure, resulting in exotic electronic phenomena ranging from ferromagnetism to superconductivity. However, such concept on phonon engineering is still lacking. Here, we extend the 'twistnonics' to 2D puckered materials with a 'phonon magic angle' discovered by molecular dynamics simulation. The phonon magic an…
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The emergence of twistronics provides an unprecedented platform to modulate the band structure, resulting in exotic electronic phenomena ranging from ferromagnetism to superconductivity. However, such concept on phonon engineering is still lacking. Here, we extend the 'twistnonics' to 2D puckered materials with a 'phonon magic angle' discovered by molecular dynamics simulation. The phonon magic angle, with the TP-1 and TP-2 direction overlapped, remains a high level or even enhances phonon transport capability due to van der Waals confinement. This novel phenomenon originates from the confined vdW interaction and ordered atomic vibration caused by the perfect lattice arrangement that the atoms of the top layer can be stuck to the spaces of the bottom layer. Moreover, it is found that both the in-plane and out-of-plane thermal transport properties can be effectively regulated by applying the twist. Through the phononic and electronic analysis, the deterioration of phonon transport capability for other twist angles are attributed to the suppression of acoustic phonon modes, reduction of phonon lifetimes and mismatched lattice vibration between layers. Our findings shed light on the twistnonics of low-dimensional asymmetrical materials and can be further extended to electronic and photonic devices.
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Submitted 22 August, 2020;
originally announced August 2020.
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Perturbation theory of thermal rectification
Authors:
Chuang Zhang,
Meng An,
Zhaoli Guo,
Songze Chen
Abstract:
Thermal rectification which is a diode-like behavior of heat flux has been studied over a long time. However, a universal and systematic physical description is still lacking. In this letter, a perturbation theory of thermal rectification is developed, which provides an analytical formula of the thermal rectification ratio. It reveals the linear relationship between the thermal rectification ratio…
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Thermal rectification which is a diode-like behavior of heat flux has been studied over a long time. However, a universal and systematic physical description is still lacking. In this letter, a perturbation theory of thermal rectification is developed, which provides an analytical formula of the thermal rectification ratio. It reveals the linear relationship between the thermal rectification ratio and temperature difference. Furthermore, the size-dependence of the thermal rectification relies on the specific form of the thermal conductivity. In addition, several experimental and numerical observations in previous literatures are well explained. This theory can be applicable to any system in which a differentiable effective thermal conductivity can be derived, and is helpful to unveil general principle for thermal rectification.
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Submitted 30 June, 2020; v1 submitted 15 April, 2020;
originally announced April 2020.
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Tuning Magnetism in Layered Magnet VI$_3$: A Theoretical Study
Authors:
Ming An,
Yang Zhang,
Jun Chen,
Hui-Min Zhang,
Yunjun Guo,
Shuai Dong
Abstract:
When combined with transition metals with partially filled $d$-orbitals, magnetism can be incorporated in two-dimensional materials, which greatly expands the scope for fundamental researches and potential applications of these materials. Here, a first-principles study of a new two-dimensional ferromagnet VI$_3$ has been carried out. The structural symmetry, magnetic and electronic properties of V…
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When combined with transition metals with partially filled $d$-orbitals, magnetism can be incorporated in two-dimensional materials, which greatly expands the scope for fundamental researches and potential applications of these materials. Here, a first-principles study of a new two-dimensional ferromagnet VI$_3$ has been carried out. The structural symmetry, magnetic and electronic properties of VI$_3$ in its bulk and single layer forms have been confirmed and predicted, respectively. Its ferromagnetic Curie temperature is predicted to be reduced by half in its monolayer form. In addition, the cation substitution in its monolayer have also been studied, which can significantly tune the magnetism.
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Submitted 22 December, 2019;
originally announced December 2019.
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Spontaneous rectification and absolute negative mobility of inertial Brownian particles induced by Gaussian potentials in steady laminar flows
Authors:
Jian-Chun Wu,
Meng An,
Wei-Gang Ma
Abstract:
We study the transport of inertial Brownian particles in steady laminar flows in the presence of two-dimensional Gaussian potentials. Through extensive numerical simulations, it is found that the transport is sensitively dependent on the external constant force and the Gaussian potential. Within tailored parameter regimes, the system exhibits a rich variety of transport behaviors. In the absence o…
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We study the transport of inertial Brownian particles in steady laminar flows in the presence of two-dimensional Gaussian potentials. Through extensive numerical simulations, it is found that the transport is sensitively dependent on the external constant force and the Gaussian potential. Within tailored parameter regimes, the system exhibits a rich variety of transport behaviors. In the absence of any external driving forces, the spontaneous rectification of the particles can be manipulated by the spatial position of the Gaussian potential. Moreover, when the potential lies at the center of the cellular flow, the system exhibits absolute negative mobility (ANM), i.e., the particles can move in a direction opposite to the constant force. More importantly, the phenomenon of ANM induced by Gaussian potential is robust in a wider range of the system parameters and can be further strengthened with the optimized parameters, which may pave the way to the implementation of related experiments.
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Submitted 20 September, 2019; v1 submitted 24 February, 2019;
originally announced February 2019.
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How Does van der Waals Confinement Enhance Phonon Transport?
Authors:
Xiaoxiang Yu,
Dengke Ma,
Chengcheng Deng,
Xiao Wan,
Meng An,
Han Meng,
Xiaobo Li,
Xiaoming Huang,
Nuo Yang
Abstract:
The van der Waals (vdW) interactions exist in reality universally and play an important role in physics. Here, we show the study on the mechanism of vdW interactions on phonon transport in atomic scale, which would boost developments in heat management and energy conversion. Commonly, the vdW interactions are regarded as a hindrance in phonon transport. Here, we propose that the vdW confinement wi…
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The van der Waals (vdW) interactions exist in reality universally and play an important role in physics. Here, we show the study on the mechanism of vdW interactions on phonon transport in atomic scale, which would boost developments in heat management and energy conversion. Commonly, the vdW interactions are regarded as a hindrance in phonon transport. Here, we propose that the vdW confinement will enhance phonon transport. Through molecular dynamics simulations, it shows that the vdW confinement makes more than two-fold enhancement on thermal conductivity of both polyethylene single chain and graphene nanoribbon. The quantitative analyses of morphology, local vdW potential energy and dynamical properties are carried out to reveal the underlying physical mechanism. It is found that the confined vdW potential barriers reduce the atomic thermal displacement magnitudes, thus lead to less phonon scattering and facilitate thermal transport. Our study offers a new strategy to modulate the heat transport.
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Submitted 9 October, 2018;
originally announced October 2018.
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Appearance and disappearance of ferromagnetism in ultra-thin LaMnO$_3$ on SrTiO$_3$ substrate: a viewpoint from first-principles
Authors:
Ming An,
Yakui Weng,
Huimin Zhang,
Jun-Jie Zhang,
Yang Zhang,
Shuai Dong
Abstract:
The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultra-thin LaMnO$_3$ films on the mostly used SrTiO$_3$ substrate is a long-existing question under debate. Either strain effect or non-stoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [Science \textbf{349}, 716 (2015)], one more mechanism, namely the self-doping due to polar…
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The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultra-thin LaMnO$_3$ films on the mostly used SrTiO$_3$ substrate is a long-existing question under debate. Either strain effect or non-stoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [Science \textbf{349}, 716 (2015)], one more mechanism, namely the self-doping due to polar discontinuity, was argued to be the driving force of ferromagnetism beyond the critical thickness. Here systematic first-principles calculations have been performed to check these mechanisms in ultra-thin LaMnO$_3$ films as well as superlattices. Starting from the very precise descriptions of both LaMnO$_3$ and SrTiO$_3$, it is found that the compressive strain is the dominant force for the appearance of ferromagnetism, while the open surface with oxygen vacancies leads to the suppression of ferromagnetism. Within LaMnO$_3$ layers, the charge reconstructions involve many competitive factors and certainly go beyond the intuitive polar catastrophe model established for LaAlO$_3$/SrTiO$_3$ heterostructures. Our study not only explains the long-term puzzle regarding the magnetism of ultra-thin LaMnO$_3$ films, but also shed light on how to overcome the notorious magnetic dead layer in ultra-thin manganites.
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Submitted 30 November, 2017;
originally announced November 2017.
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Phase stability, ordering tendencies, and magnetism in single-phase fcc Au-Fe nanoalloys
Authors:
I. A. Zhuravlev,
S. V. Barabash,
J. M. An,
K. D. Belashchenko
Abstract:
Bulk Au-Fe alloys separate into Au-based fcc and Fe-based bcc phases, but L1$_0$ and L1$_2$ orderings were reported in single-phase Au-Fe nanoparticles. Motivated by these observations, we study the structural and ordering energetics in this alloy by combining density functional theory (DFT) calculations with effective Hamiltonian techniques: a cluster expansion with structural filters, and the co…
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Bulk Au-Fe alloys separate into Au-based fcc and Fe-based bcc phases, but L1$_0$ and L1$_2$ orderings were reported in single-phase Au-Fe nanoparticles. Motivated by these observations, we study the structural and ordering energetics in this alloy by combining density functional theory (DFT) calculations with effective Hamiltonian techniques: a cluster expansion with structural filters, and the configuration-dependent lattice deformation model. The phase separation tendency in Au-Fe persists even if the fcc-bcc decomposition is suppressed. The relative stability of disordered bcc and fcc phases observed in nanoparticles is reproduced, but the fully ordered L1$_0$ AuFe, L1$_2$ Au$_3$Fe, and L1$_2$ AuFe$_3$ structures are unstable in DFT. However, a tendency to form concentration waves at the corresponding [001] ordering vector is revealed in nearly-random alloys in a certain range of concentrations. This incipient ordering requires enrichment by Fe relative to the equiatomic composition, which may occur in the core of a nanoparticle due to the segregation of Au to the surface. Effects of magnetism on the chemical ordering are also discussed.
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Submitted 26 September, 2017;
originally announced September 2017.
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Exchange striction driven magnetodielectric effect and potential photovoltaic effect in polar CaOFeS
Authors:
Yang Zhang,
Lingfang Lin,
Jun-Jie Zhang,
Xin Huang,
Ming An,
Shuai Dong
Abstract:
CaOFeS is a semiconducting oxysulfide with polar layered triangular structure. Here a comprehensive theoretical study has been performed to reveal its physical properties, including magnetism, electronic structure, phase transition, magnetodielectric effect, as well as optical absorption. Our calculations confirm the Ising-like G-type antiferromagnetic ground state driven by the next-nearest neigh…
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CaOFeS is a semiconducting oxysulfide with polar layered triangular structure. Here a comprehensive theoretical study has been performed to reveal its physical properties, including magnetism, electronic structure, phase transition, magnetodielectric effect, as well as optical absorption. Our calculations confirm the Ising-like G-type antiferromagnetic ground state driven by the next-nearest neighbor exchanges, which breaks the trigonal symmetry and is responsible for the magnetodielectric effect driven by exchange striction. In addition, a large coefficient of visible light absorption is predicted, which leads to promising photovoltaic effect with the maximum light-to-electricity energy conversion efficiency up to 24.2%.
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Submitted 9 August, 2017;
originally announced August 2017.
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Thermal Conductivity of PAAm Hydrogel and its Crosslinking Effect
Authors:
Ni Tang,
Zhan Peng,
Rulei Guo,
Meng An,
Xiaobo Li,
Nuo Yang,
Jianfeng Zang
Abstract:
As the interface between human and machine becomes blurred, hydrogel incorporated electronics and devices have emerged to be a new class of flexible/stretchable electronic and ionic devices due to their extraordinary properties, such as soft, mechanically robust and biocompatible. However, heat dissipation in these devices could be a critical issue and remains unexplored. Here, we report the exper…
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As the interface between human and machine becomes blurred, hydrogel incorporated electronics and devices have emerged to be a new class of flexible/stretchable electronic and ionic devices due to their extraordinary properties, such as soft, mechanically robust and biocompatible. However, heat dissipation in these devices could be a critical issue and remains unexplored. Here, we report the experimental measurements and equilibrium molecular dynamic (EMD) simulations of thermal conduction in polyacrylamide (PAAm) hydrogels at room temperature. The thermal conductivity of the PAAm hydrogels can be modulated from 0.33 to 0.51 Wm-1K-1 by changing the crosslinking density. The crosslinking density dependent thermal conductivity in hydrogels is explained by the competition between the increased conduction pathways and the enhanced phonon scattering effect. The assumption is further supported by both the equilibrium swelling ratio measurement and molecular simulation of hydrogels. Our study offers fundamental understanding of thermal transport in soft materials and provides design guidance for hydrogel-based devices.
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Submitted 3 May, 2017;
originally announced May 2017.
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Unexpectedly High Cross-plane Thermoelectric Performance in Layered Carbon Nitrides
Authors:
Zhidong Ding,
Meng An,
Shenqiu Mo,
Xiaoxiang Yu,
Zelin Jin,
Yuxuan Liao,
Jingtao Lü,
Kevian Esfarjani,
Junichiro Shiomi,
Nuo Yang
Abstract:
Organic thermoelectric (TE) materials create a brand new perspective to search for high-efficiency TE materials, due to their small thermal conductivity. The overlap of pz orbitals, commonly existing in organic π-stacking semiconductors, can potentially result in high electronic mobility comparable to inorganic electronics. Here we propose a strategy to utilize the overlap of pz orbitals to increa…
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Organic thermoelectric (TE) materials create a brand new perspective to search for high-efficiency TE materials, due to their small thermal conductivity. The overlap of pz orbitals, commonly existing in organic π-stacking semiconductors, can potentially result in high electronic mobility comparable to inorganic electronics. Here we propose a strategy to utilize the overlap of pz orbitals to increase the TE efficiency of layered polymeric carbon nitride (PCN). Through first-principles calculations and classical molecular dynamics simulations, we find that A-A stacked PCN has unexpectedly high cross-plane ZT up to 0.52 at 300 K, which can contribute to n-type TE groups. The high ZT originates from its one-dimensional charge transport and small thermal conductivity. The thermal contribution of the overlap of pz orbitals is investigated, which noticeably enhances the thermal transport when compared with the thermal conductivity without considering the overlap effect. For a better understanding of its TE advantages, we find that the low-dimensional charge transport results from strong pz-overlap interactions and the in-plane electronic confinement, by comparing π-stacking carbon nitride derivatives and graphite. This study can provide a guidance to search for high cross-plane TE performance in layered materials.
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Submitted 19 November, 2018; v1 submitted 1 March, 2017;
originally announced March 2017.
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Generalized two-temperature model for coupled phonons
Authors:
Meng An,
Qichen Song,
Xiaoxiang Yu,
Han Meng,
Dengke Ma,
Ruiyang Li,
Zelin Jin,
Baoling Huang,
Nuo Yang
Abstract:
The design of graphene-based composite with high thermal conductivity requires a comprehensive understanding of phonon coupling in graphene. We extended the two-temperature model to coupled groups of phonon. The study give new physical quantities, the phonon-phonon coupling factor and length, to characterize the couplings quantitatively. Besides, our proposed coupling length has an obvious depende…
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The design of graphene-based composite with high thermal conductivity requires a comprehensive understanding of phonon coupling in graphene. We extended the two-temperature model to coupled groups of phonon. The study give new physical quantities, the phonon-phonon coupling factor and length, to characterize the couplings quantitatively. Besides, our proposed coupling length has an obvious dependence on system size. Our studies can not only observe the nonequilibrium between different groups of phonon, but explain theoretically the thermal resistance inside graphene.
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Submitted 26 July, 2017; v1 submitted 17 February, 2017;
originally announced February 2017.
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A series circuit of thermal rectifiers: an effective way to enhance rectification ratio
Authors:
Shiqian Hu,
Meng An,
Nuo Yang,
Baowen Li
Abstract:
The low rectification ratio limits the application of thermal rectifiers. In this paper, it is found that a series circuit of thermal rectifiers in asymmetric graphene/graphene phononic crystal (GPnC) structures can improve rectification significantly. The simulations by using non-equilibrium molecular dynamics (NEMD) are performed. Moreover, the size effect on thermal rectification is also studie…
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The low rectification ratio limits the application of thermal rectifiers. In this paper, it is found that a series circuit of thermal rectifiers in asymmetric graphene/graphene phononic crystal (GPnC) structures can improve rectification significantly. The simulations by using non-equilibrium molecular dynamics (NEMD) are performed. Moreover, the size effect on thermal rectification is also studied and discussed.
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Submitted 5 May, 2016;
originally announced May 2016.
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The adjustable thermal resistor by reversibly folding a graphene sheet
Authors:
Qichen Song,
Meng An,
Xiandong Chen,
Zhan Peng,
Jianfeng Zang,
Nuo Yang
Abstract:
Phononic (thermal) devices are studied such as thermal diode, thermal transistors, thermal logic gates, and thermal memories. However, the thermal resistor has not been demonstrated yet. Here, we propose an instantaneously adjustable thermal resistor by folded graphene. Through theoretical analysis and molecular dynamics simulations, we studied the phonon folding effect and the dependent of therma…
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Phononic (thermal) devices are studied such as thermal diode, thermal transistors, thermal logic gates, and thermal memories. However, the thermal resistor has not been demonstrated yet. Here, we propose an instantaneously adjustable thermal resistor by folded graphene. Through theoretical analysis and molecular dynamics simulations, we studied the phonon folding effect and the dependent of thermal resistivity on the length between two folds and the overall length. Further, we discuss on the possibility to realize the instantaneously adjustable thermal resistor in experiment. Our studies bring insights in designing thermal resistor and understanding thermal modulation of 2D materials by adjusting its basic structure parameters.
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Submitted 12 May, 2016; v1 submitted 9 March, 2016;
originally announced March 2016.
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Possible ferrimagnetism and ferroelectricity of half-substituted rare-earth titanate: a first-principles study on Y$_{0.5}$La$_{0.5}$TiO$_3$
Authors:
Ming An,
Huimin Zhang,
Yakui Weng,
Yang Zhang,
Shuai Dong
Abstract:
Titanates with the perovskite structure, including ferroelectrics (e.g., BaTiO$_3$) and ferromagnetic ones (e.g., YTiO$_3$), are important functional materials. Recent theoretical studies predicted multiferroic states in strained EuTiO$_3$ and titanate superlattices, the former of which has already been experimental confirmed. Here, a first-principles calculation is performed to investigate the st…
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Titanates with the perovskite structure, including ferroelectrics (e.g., BaTiO$_3$) and ferromagnetic ones (e.g., YTiO$_3$), are important functional materials. Recent theoretical studies predicted multiferroic states in strained EuTiO$_3$ and titanate superlattices, the former of which has already been experimental confirmed. Here, a first-principles calculation is performed to investigate the structural, magnetic, and electronic properties of Y half-substituted LaTiO3. Our results reveal that the magnetism of Y$_{0.5}$La$_{0.5}$TiO$_3$ sensitively depends on its structural details because of the inherent phase competition. The lowest energy state is the ferromagnetic state, resulting in 0.25 $μ_{\rm B}$/Ti. Furthermore, some configurations of Y$_{0.5}$La$_{0.5}$TiO$_3$ exhibit hybrid improper polarizations, which can be significantly affected by magnetism, resulting in the multiferroic properties. Because of the quenching disorder of substitution, the real Y$_{0.5}$La$_{0.5}$TiO3 material with random A-site ions may exhibit interesting relaxor behaviors.
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Submitted 11 December, 2015;
originally announced December 2015.
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Manipulate Temperature Dependence of Thermal Conductivity of Graphene Phononic Crystal
Authors:
Shiqian Hu,
Meng An,
Nuo Yang,
Baowen Li
Abstract:
By using non-equilibrium molecular dynamics simulations(NEMD), the modulation on temperature dependence of thermal conductivity of graphene phononic crystals (GPnCs) are investigated. It is found that the temperature dependence of thermal conductivity of GPnCs follows $T^{-α}$ behavior. The power exponents ($α$) can be efficiently tuned by changing the characteristic size of GPnCs. The phonon part…
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By using non-equilibrium molecular dynamics simulations(NEMD), the modulation on temperature dependence of thermal conductivity of graphene phononic crystals (GPnCs) are investigated. It is found that the temperature dependence of thermal conductivity of GPnCs follows $T^{-α}$ behavior. The power exponents ($α$) can be efficiently tuned by changing the characteristic size of GPnCs. The phonon participation ratio spectra and dispersion relation reveal that the long-range phonon modes are more affected in GPnCs with larger size of holes ($L_0$). Our results suggest that constructing GPnCs is an effective method to manipulate the temperature dependence of thermal conductivity of graphene, which would be beneficial for developing GPnCs-based thermal management and signal processing devices.
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Submitted 17 January, 2016; v1 submitted 29 November, 2015;
originally announced November 2015.
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Orientation-dependent ferroelectricity of strained PbTiO$_3$ films
Authors:
Huimin Zhang,
Ming An,
Xiaoyan Yao,
Shuai Dong
Abstract:
PbTiO$_3$ is a simple but very important ferroelectric oxide that has been extensively studied and widely used in various technological applications. However, most previous studies and applications were based on the bulk material or the conventional [$001$]-orientated films. There are few studies on PbTiO$_3$ films grown along other crystalline axes. In this study, a first-principles calculation w…
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PbTiO$_3$ is a simple but very important ferroelectric oxide that has been extensively studied and widely used in various technological applications. However, most previous studies and applications were based on the bulk material or the conventional [$001$]-orientated films. There are few studies on PbTiO$_3$ films grown along other crystalline axes. In this study, a first-principles calculation was performed to compute the polarization of PbTiO$_3$ films strained by SrTiO$_3$ and LaAlO$_3$ substrates. Our results show that the polarization of PbTiO$_3$ films strongly depends on the growth orientation as well as the monoclinic angles. Further, it is suggested that the ferroelectricity of PbTiO$_3$ mainly depends on the tetragonality of the lattice, instead of the simple strain.
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Submitted 10 November, 2015;
originally announced November 2015.
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Microscopic, first-principles model of strain-induced interaction in concentrated size-mismatched alloys
Authors:
I. A. Zhuravlev,
J. M. An,
K. D. Belashchenko
Abstract:
The harmonic Kanzaki-Krivoglaz-Khachaturyan model of strain-induced interaction is generalized to concentrated size-mismatched alloys and adapted to first-principles calculations. The configuration dependence of both Kanzaki forces and force constants is represented by real-space cluster expansions that can be constructed based on the calculated forces. The model is implemented for the fcc lattice…
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The harmonic Kanzaki-Krivoglaz-Khachaturyan model of strain-induced interaction is generalized to concentrated size-mismatched alloys and adapted to first-principles calculations. The configuration dependence of both Kanzaki forces and force constants is represented by real-space cluster expansions that can be constructed based on the calculated forces. The model is implemented for the fcc lattice and applied to Cu$_{1-x}$Au$_x$ and Fe$_{1-x}$Pt$_x$ alloys for concentrations $x=0.25$, 0.5, and 0.75. The asymmetry between the $3d$ and $5d$ elements leads to large quadratic terms in the occupation-number expansion of the Kanzaki forces and thereby to strongly non-pairwise long-range interaction. The main advantage of the full configuration-dependent lattice deformation model is its ability to capture this singular many-body interaction. The roles of ordering striction and anharmonicity in Cu-Au and Fe-Pt alloys are assessed. Although the harmonic force constants defined with respect to the unrelaxed lattice are unsuitable for the calculation of the vibrational entropies, the phonon spectra for ordered and disordered alloys are found to be in good agreement with experimental data. The model is further adapted to concentration wave analysis and Monte Carlo simulations by means of an auxiliary multi-parametric real-space cluster expansion, which is used to find the ordering temperatures. Good agreement with experiment is found for all systems except CuAu$_3$ (due to the known failure of the generalized gradient approximation) and FePt$_3$, where the discrepancy is likely due to the neglect of magnetic disorder.
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Submitted 11 September, 2014;
originally announced September 2014.
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Electronic structure and magnetic properties of Gd-doped and Eu-rich EuO
Authors:
J. M. An,
K. D. Belashchenko
Abstract:
The effects of Gd doping and O vacancies on the magnetic interaction and Curie temperature of EuO are studied using first-principles calculations. Linear response calculations in the virtual crystal approximation show a broad maximum in the Curie temperature as a function of doping, which results from the combination of the saturating contribution from indirect exchange and a decreasing contributi…
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The effects of Gd doping and O vacancies on the magnetic interaction and Curie temperature of EuO are studied using first-principles calculations. Linear response calculations in the virtual crystal approximation show a broad maximum in the Curie temperature as a function of doping, which results from the combination of the saturating contribution from indirect exchange and a decreasing contribution from the f-d hopping mechanism. Non-Heisenberg interaction at low doping levels and its effect on the Curie temperature are examined. The electronic structure of a substitutional Gd and of an O vacancy in EuO are evaluated. When the 4f spins are disordered, the impurity state goes from single to double occupation, but correlated bound magnetic polarons are not ruled out. At higher vacancy concentrations typical for Eu-rich EuO films, the impurity states broaden into bands and remain partially filled. To go beyond the homogeneous doping picture, magnetostructural cluster expansions are constructed, which describe the modified exchange parameters near Gd dopants or O vacancies. Thermodynamic properties are studied using Monte Carlo simulations. The Curie temperature for Gd-doped EuO agrees with the results of the virtual crystal approximation and shows a maximum of about 150 K. At 3.125% vacancy concentration the Curie temperature increases to 120 K, consistent with experimental data for Eu-rich film samples.
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Submitted 6 August, 2013;
originally announced August 2013.
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First-principles study of phase stability of Gd-doped EuO and EuS
Authors:
J. M. An,
S. V. Barabash,
V. Ozolins,
M. van Schilfgaarde,
K. D. Belashchenko
Abstract:
Phase diagrams of isoelectronic Eu$_{1-x}$Gd$_x$O and Eu$_{1-x}$Gd$_{x}$S quasi-binary alloy systems are constructed using first-principles calculations combined with the standard cluster expansion approach and Monte-Carlo simulations. The oxide system has a wide miscibility gap on the Gd-rich side but forms ordered compounds on the Eu-rich side, exhibiting a deep asymmetric convex hull in the for…
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Phase diagrams of isoelectronic Eu$_{1-x}$Gd$_x$O and Eu$_{1-x}$Gd$_{x}$S quasi-binary alloy systems are constructed using first-principles calculations combined with the standard cluster expansion approach and Monte-Carlo simulations. The oxide system has a wide miscibility gap on the Gd-rich side but forms ordered compounds on the Eu-rich side, exhibiting a deep asymmetric convex hull in the formation enthalpy diagram. The sulfide system has no stable compounds. The large difference in the formation enthalpies of the oxide and sulfide compounds is due to the contribution of local lattice relaxation, which is sensitive to the anion size. The solubility of Gd in both EuO and EuS is in the range of 10-20% at room temperature and quickly increases at higher temperatures, indicating that highly doped disordered solid solutions can be produced without the precipitation of secondary phases. We also predict that rocksalt GdO can be stabilized under appropriate experimental conditions.
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Submitted 17 December, 2010;
originally announced December 2010.
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Prediction of a spin-polarized two-dimensional electron gas at the LaAlO3/EuO(001) interface
Authors:
Yong Wang,
Manish K. Niranjan,
J. D. Burton,
Joonhee M. An,
Kirill D. Belashchenko,
Evgeny Y. Tsymbal
Abstract:
First-principles calculations predict the existence of a spin-polarized two-dimensional electron gas (2DEG) at the LaO/EuO interface in a LaAlO3/EuO (001) heterostructure. This polar interface favors electron doping into the Eu-5d conduction bands resulting in a 2DEG formed at the interface. Due to the exchange splitting of the Eu-5d states the 2DEG is spin-polarized below the Curie temperature…
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First-principles calculations predict the existence of a spin-polarized two-dimensional electron gas (2DEG) at the LaO/EuO interface in a LaAlO3/EuO (001) heterostructure. This polar interface favors electron doping into the Eu-5d conduction bands resulting in a 2DEG formed at the interface. Due to the exchange splitting of the Eu-5d states the 2DEG is spin-polarized below the Curie temperature of EuO. The predicted mechanism for the formation of a spinpolarized 2DEG at the interface between polar and ferromagnetic insulators may provide a robust magnetism of the 2DEG which is interesting for spintronics applications.
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Submitted 27 March, 2009;
originally announced March 2009.
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Phonon softening and "forbidden" mode observed by Raman scattering in Na0.5CoO2
Authors:
Q. M. Zhang,
M. an,
S. K. Yuan,
Y. Wu,
D. Wu,
J. L. Luo,
N. L. Wang,
W. Bao,
Y. N. Wang
Abstract:
Polarized Raman scattering measurements have been performed on Na0.5CoO2 single crystal from 8 to 305 K. Both the A1g and E1g phonon modes show a softening below Tc1 ~ 83 K. Additionally, the A1g phonon mode, which is forbidden in the scattering geometry of cross polarization for the triangular CoO2 layers, appears below Tc1. In contrast, the metal-insulator transition at Tc2 ~ 46 K has only sec…
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Polarized Raman scattering measurements have been performed on Na0.5CoO2 single crystal from 8 to 305 K. Both the A1g and E1g phonon modes show a softening below Tc1 ~ 83 K. Additionally, the A1g phonon mode, which is forbidden in the scattering geometry of cross polarization for the triangular CoO2 layers, appears below Tc1. In contrast, the metal-insulator transition at Tc2 ~ 46 K has only secondary effect on the Raman spectra. The phonon softening and the ``forbidden'' Raman intensity follow closely magnetic order parameter and the gap function at the Fermi surface, indicating that the distortion of CoO6 octahedra at Tc1, instead of the Na ordering at ~350 K, is the relevant structural component of the 83 K phase transition.
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Submitted 5 February, 2008;
originally announced February 2008.
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Vibrational Modes in LiBC: Theory Compared with Experiment
Authors:
J. M. An,
H. Rosner,
S. Y. Savrasov,
W. E. Pickett
Abstract:
The search for other superconductors in the MgB2 class currently is focussed on Li{1-x}BC, which when hole-doped (concentration x) should be a metal with the potential to be a better superconductor than MgB2. Here we present the calculated phonon spectrum of the parent semiconductor LiBC. The calculated Raman-active modes are in excellent agreement with a recent observation, and comparison of ca…
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The search for other superconductors in the MgB2 class currently is focussed on Li{1-x}BC, which when hole-doped (concentration x) should be a metal with the potential to be a better superconductor than MgB2. Here we present the calculated phonon spectrum of the parent semiconductor LiBC. The calculated Raman-active modes are in excellent agreement with a recent observation, and comparison of calculated IR-active modes with a recent report provides a prediction of the LO--TO splitting for these four modes, which is small for the B-C bond stretching mode at ~1200 cm^{-1}, but large for clearly resolved modes at 540 cm^{-1} and 620 cm^{-1}.
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Submitted 11 September, 2002;
originally announced September 2002.
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Extreme Electron-Phonon Coupling in Boron-based Layered Superconductors
Authors:
J. M. An,
S. Y. Savrasov,
H. Rosner,
W. E. Pickett
Abstract:
The phonon-mode decomposition of the electron-phonon coupling in the MgB2-like system Li_{1-x}BC is explored using first principles calculations. It is found that the high temperature superconductivity of such systems results from extremely strong coupling to only ~2% of the phonon modes. Novel characteristics of E_2g branches include (1) ``mode lambda'' values of 25 and greater compared to a me…
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The phonon-mode decomposition of the electron-phonon coupling in the MgB2-like system Li_{1-x}BC is explored using first principles calculations. It is found that the high temperature superconductivity of such systems results from extremely strong coupling to only ~2% of the phonon modes. Novel characteristics of E_2g branches include (1) ``mode lambda'' values of 25 and greater compared to a mean of $\sim 0.4$ for other modes, (2) a precipitous Kohn anomaly, and (3) E_2g phonon linewidths within a factor of ~2 of the frequency itself, indicating impending breakdown of linear electron-phonon theory. This behavior in borne out by recent inelastic x-ray scattering studies of MgB2 by Shukla et al.
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Submitted 10 September, 2002; v1 submitted 23 July, 2002;
originally announced July 2002.
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Fermi Surfaces of Diborides: MgB2 and ZrB2
Authors:
H. Rosner,
J. M. An,
W. E. Pickett,
S. -L. Drechsler
Abstract:
We provide a comparison of accurate full potential band calculations of the Fermi surfaces areas and masses of MgB2 and ZrB2 with the de Haas-van Alphen date of Yelland et al. and Tanaka et al., respectively. The discrepancies in areas in MgB2 can be removed by a shift of sigma-bands downward with respect to pi-bands by 0.24 eV. Comparison of effective masses lead to orbit averaged electron-phon…
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We provide a comparison of accurate full potential band calculations of the Fermi surfaces areas and masses of MgB2 and ZrB2 with the de Haas-van Alphen date of Yelland et al. and Tanaka et al., respectively. The discrepancies in areas in MgB2 can be removed by a shift of sigma-bands downward with respect to pi-bands by 0.24 eV. Comparison of effective masses lead to orbit averaged electron-phonon coupling constants lambda(sigma)=1.3 (both orbits), lambda(pi)=0.5. The required band shifts, which we interpret as an exchange attraction for sigma states beyond local density band theory, reduces the number of holes from 0.15 to 0.11 holes per cell. This makes the occurrence of superconductivity in MgB2 a somewhat closer call than previously recognized, and increases the likelihood that additional holes can lead to an increased Tc.
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Submitted 1 March, 2002;
originally announced March 2002.
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Superconductivity of MgB2: Covalent Bonds Driven Metallic
Authors:
J. M. An,
W. E. Pickett
Abstract:
A series of calculations on MgB2 and related isoelectronic systems indicates that the layer of Mg(2+) ions lowers the non-bonding B "pi" (p_z) bands relative to the bonding "sigma" (sp_xp_y) bands compared to graphite, causing sigma --> pi charge transfer and sigma band doping of 0.13 holes/cell. Due to their two dimensionality the sigma bands contribute strongly to the Fermi level density of st…
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A series of calculations on MgB2 and related isoelectronic systems indicates that the layer of Mg(2+) ions lowers the non-bonding B "pi" (p_z) bands relative to the bonding "sigma" (sp_xp_y) bands compared to graphite, causing sigma --> pi charge transfer and sigma band doping of 0.13 holes/cell. Due to their two dimensionality the sigma bands contribute strongly to the Fermi level density of states. Calculated deformation potentials of Gamma point phonons identify the B bond stretching modes as dominating the electron-phonon coupling. Superconductivity driven by sigma band holes is consistent with the report of destruction of superconductivity by doping with Al.
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Submitted 4 March, 2001; v1 submitted 21 February, 2001;
originally announced February 2001.
