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Deep learning for the rare-event rational design of 3D printed multi-material mechanical metamaterials
Authors:
H. Pahlavani,
M. Amani,
M. Cruz Saldívar,
J. Zhou,
M. J. Mirzaali,
A. A. Zadpoor
Abstract:
Emerging multi-material 3D printing techniques have paved the way for the rational design of metamaterials with not only complex geometries but also arbitrary distributions of multiple materials within those geometries. Varying the spatial distribution of multiple materials gives rise to many interesting and potentially unique combinations of anisotropic elastic properties. While the availability…
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Emerging multi-material 3D printing techniques have paved the way for the rational design of metamaterials with not only complex geometries but also arbitrary distributions of multiple materials within those geometries. Varying the spatial distribution of multiple materials gives rise to many interesting and potentially unique combinations of anisotropic elastic properties. While the availability of a design approach to cover a large portion of all possible combinations of elastic properties is interesting in itself, it is even more important to find the extremely rare designs that lead to highly unusual combinations of material properties (e.g., double-auxeticity and high elastic moduli). Here, we used a random distribution of a hard phase and a soft phase within a regular lattice to study the resulting anisotropic mechanical properties of the network in general and the abovementioned rare designs in particular. The primary challenge to take up concerns the huge number of design parameters and the extreme rarity of such designs. We, therefore, used computational models and deep learning algorithms to create a mapping from the space of design parameters to the space of mechanical properties, thereby (i) reducing the computational time required for evaluating each designand (ii) making the process of evaluating the different designs highly parallelizable. Furthermore, we selected ten designs to be fabricated using polyjet multi-material 3D printing techniques, mechanically tested them, and characterized their behavior using digital image correlation (DIC, 3 designs) to validate the accuracy of our computational models. The results of our simulations show that deep learning-based algorithms can accurately predict the mechanical properties of the different designs, which match the various deformation mechanisms observed in the experiments.
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Submitted 4 April, 2022;
originally announced April 2022.
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Fouling in thin film nanocomposite membranes for power generation through pressure retarded osmosis
Authors:
Arvin Shadravan,
Mahmood Amani,
Peisean Goh,
Ahmad Fauzi Ismail
Abstract:
Osmotic energy (or salinity-gradient energy) is the energy released when water with different salinities is mixed, such as rivers and oceans. By employing a semipermeable membrane to control the mixing process, the osmotic pressure gradient energy can be generated in terms of electrical power via pressure retarded osmosis (PRO) without causing adverse environmental impacts. This work presents the…
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Osmotic energy (or salinity-gradient energy) is the energy released when water with different salinities is mixed, such as rivers and oceans. By employing a semipermeable membrane to control the mixing process, the osmotic pressure gradient energy can be generated in terms of electrical power via pressure retarded osmosis (PRO) without causing adverse environmental impacts. This work presents the fabrication of thin film nanocomposite (TFN) membranes which are customized to offer high flux in forward osmosis (FO) and high osmotic power in PRO. In this study, the TFN membrane was fabricated by forming a polyamide thin film on the polysulfone substrate through the interfacial polymerization process. One of the challenges in this process is the fouling of PRO membranes. Fouling is one of the major characteristics that results in the decline in the water flux of the membrane. The hydraulic pressure during PRO processes is less than RO processes so membranes that are used for PRO are less likely to foul. Experiments show that TFN membranes are more tolerant of fouling than TFC membranes because of the nanomaterials which has higher surface hydrophilicity. The structure of the membrane is a very significant characteristic that has an influence on fouling. Especially, the structure of porosity that is coherent to the thickness.
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Submitted 5 December, 2021;
originally announced December 2021.
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Recent Advances of Nanomaterials in Membranes for Osmotic Energy Harvesting by Pressure Retarded Osmosis
Authors:
Arvin Shadravan,
Mahmood Amani
Abstract:
Energy and water issues are the two main global challenges faced by human in the past decade. The rapid growth in global energy consumption and greenhouse gas emissions have encouraged the exploration of renewable energy sources as substitute fuels. Osmotic energy (or salinity-gradient energy) is the energy released when water with different salinities is mixed, such as rivers and oceans. By emplo…
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Energy and water issues are the two main global challenges faced by human in the past decade. The rapid growth in global energy consumption and greenhouse gas emissions have encouraged the exploration of renewable energy sources as substitute fuels. Osmotic energy (or salinity-gradient energy) is the energy released when water with different salinities is mixed, such as rivers and oceans. By employing a semipermeable membrane to control the mixing process, the osmotic pressure gradient energy can be generated in terms of electrical power via pressure retarded osmosis (PRO) without causing adverse environmental impacts. This work presents a review of the fabrication of thin film nanocomposite (TFN) membranes which are customized to offer high flux in forward osmosis (FO) and high osmotic power in PRO. The hydraulic pressure during PRO processes is less than RO processes so membranes that are used for PRO are less likely to foul. The application of these nanomaterials incorporated with TFN membranes for power generation through PRO is still a new field to be explored. Despite some promising findings obtained from this work, there is always room for improvement.
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Submitted 29 July, 2022; v1 submitted 29 November, 2021;
originally announced December 2021.
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Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
Authors:
Der-Hsien Lien,
Shiekh Zia Uddin,
Matthew Yeh,
Matin Amani,
Hyungjin Kim,
Joel W. Ager III,
Eli Yablonovitch,
Ali Javey
Abstract:
Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect…
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Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic by electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.
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Submitted 8 May, 2019;
originally announced May 2019.
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Suppressing Diffusion-Mediated Exciton Annihilation in 2D Semiconductors Using the Dielectric Environment
Authors:
Aaron J. Goodman,
Der-Hsien Lien,
Geun Ho Ahn,
Leo L. Spiegel,
Matin Amani,
Adam P. Willard,
Ali Javey,
William A. Tisdale
Abstract:
Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-…
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Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-order exciton-exciton annihilation, k_XX [cm2/s], is reduced by one or two orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature exciton diffusion coefficient in chemical-treated MoS2 to be D = 0.06 +/- 0.01 cm2/s, corresponding to a diffusion length of LD = 350 nm for an exciton lifetime of τ = 20 ns, which is independent of the substrate. These results, together with numerical simulations, suggest that the effective exciton-exciton annihilation radius monotonically decreases with increasing refractive index of the underlying substrate. Exciton-exciton annihilation limits the overall efficiency of 2D semiconductor devices operating at high exciton densities; the ability to tune these interactions via the dielectric environment is an important step toward more efficient optoelectronic technologies featuring atomically thin materials.
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Submitted 2 November, 2018;
originally announced November 2018.
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Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
Authors:
Wei Li,
A. Glen Birdwell,
Matin Amani,
Robert A. Burke,
Xi Ling,
Yi-Hsien Lee,
Xuelei Liang,
Lianmao Peng,
Curt A. Richter,
Jing Kong,
David J. Gundlach,
N. V. Nguyen
Abstract:
Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a…
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Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation. A very strong optical critical point predicted to correspond to a quasi-particle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and gama points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at ~ 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurred in bulk semiconductors, is associated with a combination of several critical points.These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general, and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations.
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Submitted 25 July, 2014;
originally announced July 2014.
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Temperature-dependent Phonon Shifts in Monolayer MoS2
Authors:
Nicholas Lanzillo,
A. Glen Birdwell,
Matin Amani,
Frank J. Crowne,
Pankaj B. Shah,
Sina Najmaei,
Zheng Liu,
Pulickel M. Ajayan,
Jun Lou,
Madan Dubey,
Saroj K. Nayak,
Terrance P. O'Regan
Abstract:
We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an expected red-shift with increasing temperature, the frequency shift is larger for the A1g more than for the E2g mode. This is in contrast to previously reported…
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We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an expected red-shift with increasing temperature, the frequency shift is larger for the A1g more than for the E2g mode. This is in contrast to previously reported bulk behavior, in which the E2g mode shows a larger frequency shift with temperature. The temperature dependence of these phonon shifts is attributed to the anharmonic contributions to the ionic interaction potential in the two-dimensional system.
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Submitted 9 July, 2013;
originally announced July 2013.
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Blue shifting of the A exciton peak in folded monolayer 1H-MoS2
Authors:
Frank J. Crowne,
Matin Amani,
A. Glen Birdwell,
Matthew L. Chin,
Terrance P. O'Regan,
Sina Najmaei,
Zheng Liu,
Pulickel M. Ajayan,
Jun Lou,
Madan Dubey
Abstract:
The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experiment…
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The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experimentally show that folding a 1H molybdenum disulphide (MoS2) layer results in a turbostratic stack with enhanced photoluminescence quantum yield and a significant shift to the blue by 90 meV. This is in contrast to the expected 2H-MoS2 band structure characteristics, which include an indirect gap and quenched photoluminescence. We present a theoretical explanation to the origin of this behavior in terms of exciton screening.
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Submitted 5 July, 2013;
originally announced July 2013.
