-
Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
T. Pierron,
C. González,
M. Sicot,
B. Kierren,
L. Moreau,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscop…
▽ More
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise with the help of density functional theory calculations. We discover dispersing bands related to electronic delocalisation within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using density functional theory calculations.
△ Less
Submitted 6 May, 2021; v1 submitted 29 November, 2020;
originally announced November 2020.
-
Electronic band structure of ultimately thin silicon oxide on Ru(0001)
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
S. Lisi,
T. Pierron,
C. González Pascual,
M. Sicot,
B. Kierren,
D. Malterre,
J. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, w…
▽ More
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.
△ Less
Submitted 12 February, 2019;
originally announced February 2019.
-
Emergence of competing magnetic interactions induced by Ge doping in the semiconductor FeGa3
Authors:
J. C. Alvarez-Quiceno,
M. Cabrera-Baez,
R. A. Ribeiro,
M. A. Avila,
G. M. Dalpian,
J. M. Osorio-Guillén
Abstract:
FeGa$_3$ is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground states that are not well understood. In this work, we have performed a joint theoretical and experimental study of FeGa$_{3-x}$Ge$_x$ using Density Functional Theory…
▽ More
FeGa$_3$ is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground states that are not well understood. In this work, we have performed a joint theoretical and experimental study of FeGa$_{3-x}$Ge$_x$ using Density Functional Theory and magnetic susceptibility measurements. For low Ge concentrations we observe the formation of localized moments on some Fe atoms and, as the dopant concentration increases, a more delocalized magnetic behavior emerges. The magnetic configuration strongly depends on the dopant distribution, leading even to the appearance of antiferromagnetic interactions in certain configurations.
△ Less
Submitted 27 July, 2016; v1 submitted 23 June, 2015;
originally announced June 2015.
