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Thermal transport from 1D- and 2D-confined nanostructures on silicon probed using coherent extreme UV light: General and predictive model yields new understanding
Authors:
Albert Beardo,
Joshua L. Knobloch,
Lluc Sendra,
Javier Bafaluy,
Travis D. Frazer,
Weilun Chao,
Jorge N. Hernandez-Charpak,
Henry C. Kapteyn,
Begoña Abad,
Margaret M. Murnane,
F. Xavier Alvarez,
Juan Camacho
Abstract:
Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed known deviations from Fourier's law modeling by including effective parameters, such as a size-dependent thermal conductivity. However, recent experiments have qual…
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Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed known deviations from Fourier's law modeling by including effective parameters, such as a size-dependent thermal conductivity. However, recent experiments have qualitatively shown new behavior that cannot be modeled in this way. Here, we combine advanced experiment and theory to show that the cooling of 1D- and 2D-confined nanoscale hot spots on silicon can be described using a general hydrodynamic heat transport model, contrary to previous understanding of heat flow in bulk silicon. We use a comprehensive set of extreme ultraviolet scatterometry measurements of non-diffusive transport from transiently heated nanolines and nanodots to validate and generalize our ab initio model, that does not need any geometry-dependent fitting parameters. This allows us to uncover the existence of two distinct timescales and heat transport mechanisms: an interface resistance regime that dominates on short time scales, and a hydrodynamic-like phonon transport regime that dominates on longer timescales. Moreover, our model can predict the full thermomechanical response on nanometer length scales and picosecond time scales for arbitrary geometries, providing an advanced practical tool for thermal management of nanoscale technologies. Furthermore, we derive analytical expressions for the transport timescales, valid for a subset of geometries, supplying a route for optimizing heat dissipation.
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Submitted 5 March, 2021;
originally announced March 2021.
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Observation of second sound in a rapidly varying temperature field in Ge
Authors:
Albert Beardo,
Miquel López-Suárez,
Luis Alberto Pérez,
Lluc Sendra,
Maria Isabel Alonso,
Claudio Melis,
Javier Bafaluy,
Juan Camacho,
Luciano Colombo,
Riccardo Rurali,
F. X. Alvarez,
Juan Sebastián Reparaz
Abstract:
Second sound is known as the thermal transport regime where heat is carried by temperature waves. Its experimental observation was previously restricted to a small number of materials, usually in rather narrow temperature windows. We show that it is possible to overcome these limitations by driving the system with a rapidly varying temperature field. This effect is demonstrated in bulk Ge between…
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Second sound is known as the thermal transport regime where heat is carried by temperature waves. Its experimental observation was previously restricted to a small number of materials, usually in rather narrow temperature windows. We show that it is possible to overcome these limitations by driving the system with a rapidly varying temperature field. This effect is demonstrated in bulk Ge between 7 kelvin and room temperature, studying the phase lag of the thermal response under a harmonic high frequency external thermal excitation, addressing the relaxation time and the propagation velocity of the heat waves. These results provide a new route to investigate the potential of wave-like heat transport in almost any material, opening opportunities to control heat through its oscillatory nature.
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Submitted 8 January, 2021; v1 submitted 10 July, 2020;
originally announced July 2020.
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Thermal conductivity and phonon hydrodynamics in transition metal dichalcogenides from first-principles
Authors:
Pol Torres,
Francesc Xavier Alvarez,
Xavier Cartoixà,
Riccardo Rurali
Abstract:
We carry out a systematic study of the thermal conductivity of four single-layer transition metal dichalcogenides, MX$_2$ (M = Mo, W; X = S, Se) from first-principles by solving the Boltzmann Transport Equation (BTE). We compare three different theoretical frameworks to solve the BTE beyond the Relaxation Time Approximation (RTA), using the same set of interatomic force constants computed within d…
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We carry out a systematic study of the thermal conductivity of four single-layer transition metal dichalcogenides, MX$_2$ (M = Mo, W; X = S, Se) from first-principles by solving the Boltzmann Transport Equation (BTE). We compare three different theoretical frameworks to solve the BTE beyond the Relaxation Time Approximation (RTA), using the same set of interatomic force constants computed within density functional theory (DFT), finding that the RTA severely underpredicts the thermal conductivity of MS$_2$ materials. Calculations of the different phonon scattering relaxation times of the main collision mechanisms and their corresponding mean free paths (MFP) allow evaluating the expected hydrodynamic behaviour in the heat transport of such monolayers. These calculations indicate that despite of their low thermal conductivity, the present TMDs can exhibit large hydrodynamic effects, being comparable to those of graphene, especially for WSe$_2$ at high temperatures.
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Submitted 28 March, 2019;
originally announced March 2019.
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Effective thermal conductivity of rectangular nanowires based on phonon hydrodynamics
Authors:
Marc Calvo-Schwarzwälder,
Matthew G. Hennessy,
Pol Torres,
Timothy G. Myers,
F. Xavier Alvarez
Abstract:
A mathematical model is presented for thermal transport in nanowires with rectangular cross sections. Expressions for the effective thermal conductivity of the nanowire across a range of temperatures and cross-sectional aspect ratios are obtained by solving the Guyer--Krumhansl hydrodynamic equation for the thermal flux with a slip boundary condition. Our results show that square nanowires transpo…
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A mathematical model is presented for thermal transport in nanowires with rectangular cross sections. Expressions for the effective thermal conductivity of the nanowire across a range of temperatures and cross-sectional aspect ratios are obtained by solving the Guyer--Krumhansl hydrodynamic equation for the thermal flux with a slip boundary condition. Our results show that square nanowires transport thermal energy more efficiently than rectangular nanowires due to optimal separation between the boundaries. However, circular nanowires are found to be even more efficient than square nanowires due to the lack of corners in the cross section, which locally reduce the thermal flux and inhibit the conduction of heat. By using a temperature-dependent slip coefficient, we show that the model is able to accurately capture experimental data of the effective thermal conductivity obtained from Si nanowires, demonstrating that phonon hydrodynamics is a powerful framework that can be applied to nanosystems even at room temperature.
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Submitted 3 June, 2018; v1 submitted 31 May, 2018;
originally announced May 2018.
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A slip-based model for the size-dependent effective thermal conductivity of nanowires
Authors:
M. Calvo-Schwarzwälder,
M. G. Hennessy,
P. Torres,
T. G. Myers,
F. X. Alvarez
Abstract:
The heat flux across a nanowire is computed based on the Guyer-Krumhansl equation. Slip conditions with a slip length depending on both temperature and nanowire radius are introduced at the outer boundary. An explicit expression for the effective thermal conductivity is derived and compared to existing models across a given temperature range, providing excellent agreement with experimental data fo…
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The heat flux across a nanowire is computed based on the Guyer-Krumhansl equation. Slip conditions with a slip length depending on both temperature and nanowire radius are introduced at the outer boundary. An explicit expression for the effective thermal conductivity is derived and compared to existing models across a given temperature range, providing excellent agreement with experimental data for Si nanowires.
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Submitted 14 December, 2017;
originally announced December 2017.
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First principles Kinetic-Collective thermal conductivity of semiconductors
Authors:
P. Torres,
A. Torello,
J. Bafaluy,
J. Camacho,
X. Cartoixà,
F. X. Alvarez
Abstract:
A fully predictive Kinetic Collective Model using first principles phonon spectra and relaxation times is presented. Thermal conductivity values obtained for Si, Ge, C (diamond) and GaAs in a wide range of sizes and temperatures have good agreement with experimental data without the use of any fitting parameter. This validation of the model open the door to discuss how the precise combination of k…
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A fully predictive Kinetic Collective Model using first principles phonon spectra and relaxation times is presented. Thermal conductivity values obtained for Si, Ge, C (diamond) and GaAs in a wide range of sizes and temperatures have good agreement with experimental data without the use of any fitting parameter. This validation of the model open the door to discuss how the precise combination of kinetic and collective contributions to heat transport could provide a useful framework to interpret recent complex experiments displaying non-Fourier behavior.
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Submitted 23 September, 2016; v1 submitted 3 June, 2016;
originally announced June 2016.
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Thermal conductivity of bulk and nanoscaled Si/Ge alloys from the Kinetic Collective Model
Authors:
P. Torres,
C. de Tomas,
A. Lopeandia,
X. Cartoixà,
X. Alvarez
Abstract:
Several hitherto unexplained features of thermal conductivity in group IV materials, such as the change in the slope as a function of sample size for pure vs. alloyed samples and the fast decay in thermal conductivity for low impurity concentration, are described in terms of a transition from a collective to kinetic regime in phonon transport. We show that thermal transport in pure bulk silicon sa…
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Several hitherto unexplained features of thermal conductivity in group IV materials, such as the change in the slope as a function of sample size for pure vs. alloyed samples and the fast decay in thermal conductivity for low impurity concentration, are described in terms of a transition from a collective to kinetic regime in phonon transport. We show that thermal transport in pure bulk silicon samples is mainly collective, and that impurity/alloy and boundary scattering are responsible for the destruction of this regime with an associated strong reduction in thermal conductivity, leaving kinetic transport as the only one allowed when those resistive scattering mechanisms are dominant.
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Submitted 3 September, 2015; v1 submitted 4 June, 2015;
originally announced June 2015.
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Thermal conductivity of group-IV Semiconductors from a Kinetic-Collective Model
Authors:
C. de Tomas,
A. Cantarero,
A. F. Lopeandia,
F. X. Alvarez
Abstract:
The thermal conductivity of several diamond-like materials is calculated from a kinetic-collective model. From this approach, a thermal conductivity expression is obtained that includes a transition from a kinetic (free) to a collective (hydrodynamic) behavior of the phonon field. The expression contains only three parameters. Once fitted to natural occurring silicon, the same parameters for the o…
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The thermal conductivity of several diamond-like materials is calculated from a kinetic-collective model. From this approach, a thermal conductivity expression is obtained that includes a transition from a kinetic (free) to a collective (hydrodynamic) behavior of the phonon field. The expression contains only three parameters. Once fitted to natural occurring silicon, the same parameters for the other materials are directly calculated from theoretical relations. The results are in good agreement with experimental data.
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Submitted 2 February, 2014;
originally announced February 2014.
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From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures
Authors:
C. de Tomas,
A. Cantarero,
A. F. Lopeandia,
F. X. Alvarez
Abstract:
We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit exp…
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We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems.
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Submitted 14 February, 2014; v1 submitted 26 October, 2013;
originally announced October 2013.
