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Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
O. A. Kuznetsov,
B. N. Zvonkov,
E. A. Uskova,
L. Ponomarenko,
A. de Visser
Abstract:
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglect…
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In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglected in the GaAs/AlGaAs heterostructures, for which solely the effects of this nature have been observed so far. In Ge/p-Ge_{1-x}Si_x DQWs containing a hole gas, local MR peculiarities under parallel fields are discovered as well. But the tunnel gap in these DQWs is too narrow to be responsible for these observations. We suppose, they are due to a complicated shape of the hole confinement subbands.
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Submitted 6 June, 2003;
originally announced June 2003.
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The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
Authors:
Yu. G. Arapov,
G. A. Alshanskii,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
M. V. Yakunin,
O. A. Kuznetsov
Abstract:
We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside t…
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We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside the conducting layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models. For half-integer filling factors the linear temperature dependence of the effective QHE plateau-to-plateau transition width nu_0(T) is observed in contrast to scaling behavior for systems with short-range disorder. The finite T -> 0 width of QHE transitions may be due to an effective low temperature screening of smooth random potential owing to Coulomb repulsion of electrons.
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Submitted 13 November, 2001;
originally announced November 2001.
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Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
V. N. Neverov,
O. A. Kuznetsov
Abstract:
A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the quasi-two-dimensional hole gas. In the QWs of intermediate widths and hole densities, this negative magnetoresistance may be explained as being caused by suppression of…
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A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the quasi-two-dimensional hole gas. In the QWs of intermediate widths and hole densities, this negative magnetoresistance may be explained as being caused by suppression of the intersubband scattering due to the upper subband depopulation. For the widest QWs with the highest hole densities, in which the hole gas is divided into two sublayers, similar negative magnetoresistance was observed and tentatively interpreted as also been due to suppression of the intersubband scattering, but subbands are the lowest symmetric and antisymmetric states of the double quantum well structure. These subbands shift under the in-plane magnetic field not vertically in energy, but horizontally along the wave vector.
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Submitted 16 March, 2001;
originally announced March 2001.
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Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
O. A. Kuznetsov
Abstract:
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of th…
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We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of the inter-Landau-level (LL) gaps deduced from the activated magnetotransport etc] to the quantum well (QW) characteristics has been revealed in the cases when the Fermi level reaches the second confinement subband. The background density of states (5-10)x10^{14} m^{-2}meV^{-1} deduced from the activation behavior of the magnetoresistance is too high to be attributed to the LL tails, but may be accounted for within a smooth random potential model. The hole gas in the Ge QW has been found to separate into two sublayers for d_w > ~35 nm and p_s = ~5x10^{15} m^{-2}. A dramatic indication to this separation is the disappearance of the quantum Hall (QH) plateau for the filling factor nu = 1 as calculated for the whole Ge layer. Concomitantly a positive magnetoresistance emerges in the weakest fields, from which about a factor of two different mobilities in the sublayers have been deduced. A model is suggested to explain the existence of the QH plateaux close to the fundamental values in a system of two parallel layers with different mobilities. A comparison of the simulated structure of the QH magnetoresistivity with the experimental one indicates that the hole densities in the sublayers are not much different. Thus, the different mobilities are due to different quality of the normal and inverted interfaces of the Ge QW.
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Submitted 16 March, 2001;
originally announced March 2001.
