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Extrinsic Dielectric Response due to Domain Wall Motion in Ferroelectric BaTiO$_3$
Authors:
Ashok Gurung,
Mohammad Fatin Ishtiyaq,
S. Pamir Alpay,
John Mangeri,
Serge Nakhmanson
Abstract:
BaTiO$_3$ (BTO) is a prototypical perovskite ferroelectric, whose dielectric permittivity and loss spectra -- which are strongly temperature and frequency dependent -- include contributions from inhomogeneous polarization patterns, with polar domain walls (DWs) being the most common types. In order to elucidate how DWs influence dielectric response, we utilized a continuum approach based on the La…
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BaTiO$_3$ (BTO) is a prototypical perovskite ferroelectric, whose dielectric permittivity and loss spectra -- which are strongly temperature and frequency dependent -- include contributions from inhomogeneous polarization patterns, with polar domain walls (DWs) being the most common types. In order to elucidate how DWs influence dielectric response, we utilized a continuum approach based on the Landau-Ginzburg theory to model field-dependent properties of polydomain tetragonal phase of BTO near room temperature and above. A system with 180$^\circ$ DWs was evaluated as a case study, with both position-resolved and volume-averaged dielectric susceptibility and loss computed at different temperatures for a range of applied field frequencies and amplitudes. Our results demonstrate that cooperative dipole fluctuations in the vicinity of the DW provide a large (extrinsic) contribution to the system dielectric response relative to the intrinsic contribution stemming from within the domain. Dynamics of the DW profile fluctuations under applied field can be represented by a combination of breathing and sliding vibrational motions, with each exhibiting distinct dependence on the field frequency and amplitude. The implications of this behavior are important for understanding and improving control of coupled functional properties in ferroelectric materials, including their dielectric, electromechanical, and electrooptical responses. Furthermore, this investigation provides a computational benchmark for future studies and can be readily extended to other topological polarization patterns in ferroelectrics.
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Submitted 29 July, 2024;
originally announced July 2024.
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Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements
Authors:
Thomas K. Reid,
S. Pamir Alpay,
Alexander V. Balatsky,
Sanjeev K. Nayak
Abstract:
Topological insulators (TIs) are an important family of quantum materials that exhibit a Dirac point (DP) in the surface band structure but have a finite band gap in bulk. A large degree of spin-orbit interaction and low bandgap is a prerequisite for stabilizing DPs on selective atomically flat cleavage planes. Tuning of the DP in these materials has been suggested via modifications to the atomic…
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Topological insulators (TIs) are an important family of quantum materials that exhibit a Dirac point (DP) in the surface band structure but have a finite band gap in bulk. A large degree of spin-orbit interaction and low bandgap is a prerequisite for stabilizing DPs on selective atomically flat cleavage planes. Tuning of the DP in these materials has been suggested via modifications to the atomic structure of the entire system. Using the example of As$_2$Te$_3$ and ZnTe$_5$, which are not TIs, we show that a quantum phase transition can be induced in atomically flat and stepped surfaces, for As$_2$Te$_3$ and ZrTe$_5$, respectively. This is achieved by establishing a framework for controlling electronic properties that is focused on local perturbations at key locations that we call sub-structural elements (SSEs). We exemplify this framework through a novel method of isovalent sublayer anion doping and biaxial strain.
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Submitted 11 April, 2023;
originally announced April 2023.
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First Principles Modeling of Topological Insulators: Structural Optimization and Exchange Correlation Functionals
Authors:
Thomas K. Reid,
S. Pamir Alpay,
Alexander V. Balatsky,
Sanjeev K. Nayak
Abstract:
Topological insulators (TIs) are materials that are insulating in the bulk but have zero band gap surface states with linear dispersion and are protected by time reversal symmetry. These unique characteristics could pave the way for many promising applications that include spintronic devices and quantum computations. It is important to understand and theoretically describe TIs as accurately as pos…
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Topological insulators (TIs) are materials that are insulating in the bulk but have zero band gap surface states with linear dispersion and are protected by time reversal symmetry. These unique characteristics could pave the way for many promising applications that include spintronic devices and quantum computations. It is important to understand and theoretically describe TIs as accurately as possible in order to predict properties. Quantum mechanical approaches, specifically first principles density functional theory (DFT) based methods, have been used extensively to model electronic properties of TIs. Here, we provide a comprehensive assessment of a variety of DFT formalisms and how these capture the electronic structure of TIs. We concentrate on Bi$_2$Se$_3$ and Bi$_2$Te$_3$ as examples of prototypical TI materials. We find that the generalized gradient (GGA) and kinetic density functional (metaGGA) produce displacements increasing the thickness of the TI slab, whereas we see an opposite behavior in DFT computations using LDA. Accounting for van der Waals (vdW) interactions overcomes the apparent over-relaxations and retraces the atomic positions towards the bulk. Based on an intensive computational study, we show that GGA with vdW treatment is the most appropriate method for structural optimization. Electronic structures derived from GGA or metaGGA employing experimental lattice parameters are also acceptable. In this regard, we express a slight preference for metaGGA in terms of accuracy, but an overall preference for GGA due to compensatory improvements in computability in capturing TI behavior.
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Submitted 24 July, 2019;
originally announced July 2019.
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Electronic and Optical Properties of Zinc based Hybrid Organic-Inorganic Compounds for Ultraviolet Applications
Authors:
Trilochan Sahoo,
Uchenna A. Anene,
S. Pamir Alpay,
Sanjeev K. Nayak
Abstract:
Hybrid organic-inorganic (HOI) compounds are excellent candidates for a wide spectrum of applications in diverse fields such as optics, electronics, energy and biotechnology. Their broad range of versatility is achieved by combining the functionalities of organic and inorganic materials to generate unique properties. Current research has mostly focused on perovskite HOIs due to their wide range of…
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Hybrid organic-inorganic (HOI) compounds are excellent candidates for a wide spectrum of applications in diverse fields such as optics, electronics, energy and biotechnology. Their broad range of versatility is achieved by combining the functionalities of organic and inorganic materials to generate unique properties. Current research has mostly focused on perovskite HOIs due to their wide range of uses in solar cells, photo detectors and memory devices. However, drawbacks such as instability and lead toxicity limit further implementation into other new areas. Thus, there is a need to develop stable and non-toxic HOI perovskite materials. Zinc is an attractive substitute for Pb in HOIs. Here, we apply a functionality based materials selection approach to screen for Zn-based HOI compounds from two crystallographic repositories; Inorganic Crystal Structure Database and American Mineralogist Crystal Structure Database. We successfully identify thirteen Zn-based HOI compounds. The electronic structure and optical properties of these compounds are investigated using density functional theory. The calculated optical absorbance fall within the far ultra-violet (FUV) region of 200-112 nm wavelength. We selected four of these compounds and calculated their band gaps; they were found to range between 4.9-5.7 eV. Considering that the UV absorbance is three times larger than average tissue absorbance and the refractive index (> 1.49) is greater than typical tissue materials, one could consider these Zn-based HOI compounds for selective photothermolysis treatment and UV protectant coating for electronic devices.
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Submitted 12 July, 2019;
originally announced July 2019.
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Polarization rotation in Bi$_{\mathbf{4}}$Ti$_{\mathbf{3}}$O$_{\mathbf{12}}$ by isovalent doping at the fluorite sublattice
Authors:
Kevin Co,
Fu-Chang Sun S. Pamir Alpay,
Sanjeev K. Nayak
Abstract:
Bismuth titanate, Bi$_4$Ti$_3$O$_{12}$ (BiT), is a complex layered ferroelectric material that is composed of three perovskite-like units and one fluorite-like unit stacked alternatively along the $c$-direction. The ground state crystal structure is monoclinic with the spontaneous polarization (~50 $μ$C/cm$^{2}$) along the in-plane $b$-direction. BiT typically grows along the $c$-direction in thin…
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Bismuth titanate, Bi$_4$Ti$_3$O$_{12}$ (BiT), is a complex layered ferroelectric material that is composed of three perovskite-like units and one fluorite-like unit stacked alternatively along the $c$-direction. The ground state crystal structure is monoclinic with the spontaneous polarization (~50 $μ$C/cm$^{2}$) along the in-plane $b$-direction. BiT typically grows along the $c$-direction in thin film form and having the polarization vector aligned with the growth orientation can be beneficial for several potential device applications. It is well known that judicious doping of ferroelectrics is an effective method in adjusting the magnitude and the orientation of the spontaneous polarization. Here, we show using first-principles density functional theory and a detailed phonon analysis that Bi atoms in the fluorite-like layers have significantly more impact on the magnitude and orientation of the spontaneous polarization vector as compared to the perovskite-like layer. The low energy hard phonon modes are characterized by fluorite-like layers experiencing transverse displacements and large changes in Born effective charges on Bi atoms. Thus, the breaking of symmetry caused by doping of Bi sites within the fluorite-like layer leads to the formation of uncancelled permanent dipole moments along the $c$-direction. This provides an opportunity for doping the Bi site in the fluorite-like layer. Isovalent dopants P, As, and Sb were studied. P is found to be most effective in the reorientation of the spontaneous polarization. It leads to a three-fold enhancement of the $c$-component of polarization and to a commensurate rotation of the spontaneous polarization vector by 36.2$^{\circ}$ towards the $c$-direction.
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Submitted 21 August, 2018;
originally announced August 2018.
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Topological phase transformations and intrinsic size effects in ferroelectric nanoparticles
Authors:
John Mangeri,
Yomery Espinal,
Andrea Jokisaari,
S. Pamir Alpay,
Serge Nakhmanson,
Olle Heinonen
Abstract:
Composite materials comprised of ferroelectric nanoparticles in a dielectric matrix are being actively investigated for a variety of functional properties attractive for a wide range of novel electronic and energy harvesting devices. However, the dependence of these functionalities on shapes, sizes, orientation and mutual arrangement of ferroelectric particles is currently not fully understood. In…
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Composite materials comprised of ferroelectric nanoparticles in a dielectric matrix are being actively investigated for a variety of functional properties attractive for a wide range of novel electronic and energy harvesting devices. However, the dependence of these functionalities on shapes, sizes, orientation and mutual arrangement of ferroelectric particles is currently not fully understood. In this study, we utilize a time-dependent Ginzburg-Landau approach combined with coupled-physics finite-element-method based simulations to elucidate the behavior of polarization in isolated spherical PbTiO3 or BaTiO3 nanoparticles embedded in a dielectric medium, including air. The equilibrium polarization topology is strongly affected by particle diameter, as well as the choice of inclusion and matrix materials, with monodomain, vortex-like and multidomain patterns emerging for various combinations of size and materials parameters. This leads to radically different polarization vs electric field responses, resulting in highly tunable size-dependent dielectric properties that should be possible to observe experimentally. Our calculations show that there is a critical particle size below which ferroelectricity vanishes. For the PbTiO3 particle, this size is 2 and 3.4 nm, respectively, for high- and low-permittivity media. For the BaTiO3 particle, it is ~3.6 nm regardless of the medium dielectric strength.
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Submitted 10 January, 2017;
originally announced January 2017.
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Soft Phonon Mode Dynamics in Aurivillius Type Structures
Authors:
Deepam Maurya,
Ali Charkhesht,
Sanjeev K. Nayak,
Fu-Chang Sun,
Deepu George,
Abhijit Pramanick,
Min-Gyu Kang,
Hyun-Cheol Song,
Marshall M. Alexander,
Djamila Lou,
Giti A. Khodaparast,
S. Pamir Alpay,
N. Q. Vinh,
Shashank Priya
Abstract:
We report the dynamics of soft phonon modes and their role towards the various structural transformations in Aurivillius materials by employing terahertz frequency-domain spectroscopy, atomic pair distribution function analysis, and first-principles calculations. We have chosen Bi4Ti3O12 as a model system and identified soft phonon modes associated with the paraelectric tetragonal to the ferroelec…
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We report the dynamics of soft phonon modes and their role towards the various structural transformations in Aurivillius materials by employing terahertz frequency-domain spectroscopy, atomic pair distribution function analysis, and first-principles calculations. We have chosen Bi4Ti3O12 as a model system and identified soft phonon modes associated with the paraelectric tetragonal to the ferroelectric monoclinic transition. Three soft phonon modes have been discovered which exhibit a strong temperature dependence. We have determined that the anharmonicity in Bi-O bonds plays a significant role in phonon softening and that Bi cations play an important role in the emergence of ferroelectricity.
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Submitted 12 June, 2017; v1 submitted 3 September, 2016;
originally announced September 2016.
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Phase Coexistence Near a Morphotropic Phase Boundary in Sm-doped BiFeO3 Films
Authors:
S. B. Emery,
C. -J. Cheng,
D. Kan,
F. J. Rueckert,
S. P. Alpay,
V. Nagarajan,
I. Takeuchi,
B. O. Wells
Abstract:
We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25C to 700C, reveals substantial phase coexistence as one changes temperature to crossover from a low-temperature PbZrO3-like phase to a high-temperature orthorhombic phase. We also examine…
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We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25C to 700C, reveals substantial phase coexistence as one changes temperature to crossover from a low-temperature PbZrO3-like phase to a high-temperature orthorhombic phase. We also examine changes due to strain for films greater or less than the critical thickness for misfit dislocation formation. Particularly, we note that thicker films exhibit a substantial volume collapse associated with the structural transition that is suppressed in strained thin films.
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Submitted 15 June, 2010; v1 submitted 11 March, 2010;
originally announced March 2010.
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Structural phase transitions in epitaxial perovskite films
Authors:
Feizhou He,
B. O. Wells,
Z. -G. Ban,
S. P. Alpay,
S. Grenier,
S. M. Shapiro,
Weidong Si,
A. Clark,
X. X. Xi
Abstract:
Three different film systems have been systematically investigated to understand the effects of strain and substrate constraint on the phase transitions of perovskite films. In SrTiO$_3$ films, the phase transition temperature T$_C$ was determined by monitoring the superlattice peaks associated with rotations of TiO$_6$ octahedra. It is found that T$_C$ depends on both SrTiO$_3$ film thickness a…
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Three different film systems have been systematically investigated to understand the effects of strain and substrate constraint on the phase transitions of perovskite films. In SrTiO$_3$ films, the phase transition temperature T$_C$ was determined by monitoring the superlattice peaks associated with rotations of TiO$_6$ octahedra. It is found that T$_C$ depends on both SrTiO$_3$ film thickness and SrRuO$_3$ buffer layer thickness. However, lattice parameter measurements showed no sign of the phase transitions, indicating that the tetragonality of the SrTiO$_3$ unit cells was no longer a good order parameter. This signals a change in the nature of this phase transition, the internal degree of freedom is decoupled from the external degree of freedom. The phase transitions occur even without lattice relaxation through domain formation. In NdNiO$_3$ thin films, it is found that the in-plane lattice parameters were clamped by the substrate, while out-of-plane lattice constant varied to accommodate the volume change across the phase transition. This shows that substrate constraint is an important parameter for epitaxial film systems, and is responsible for the suppression of external structural change in SrTiO$_3$ and NdNiO$_3$ films. However, in SrRuO$_3$ films we observed domain formation at elevated temperature through x-ray reciprocal space mapping. This indicated that internal strain energy within films also played an important role, and may dominate in some film systems. The final strain states within epitaxial films were the result of competition between multiple mechanisms and may not be described by a single parameter.
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Submitted 6 July, 2004;
originally announced July 2004.
