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Graphene functionalised by laser ablated V2O5 as highly sensitive NH3 sensor
Authors:
Margus Kodu,
Artjom Berholts,
Tauno Kahro,
Mati Kook,
Peeter Ritslaid,
Helina Seemen,
Tea Avarmaa,
Harry Alles,
Raivo Jaaniso
Abstract:
Graphene has been recognized as a promising gas sensing material. The response of graphene-based sensors can be radically improved by introducing defects in graphene using, e. g., metal or metal oxide nanoparticles. We have functionalised CVD grown, single layer graphene by applying pulsed laser deposition (PLD) of V2O5 which resulted in a thin V2O5 layer on graphene with average thickness of ~0.6…
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Graphene has been recognized as a promising gas sensing material. The response of graphene-based sensors can be radically improved by introducing defects in graphene using, e. g., metal or metal oxide nanoparticles. We have functionalised CVD grown, single layer graphene by applying pulsed laser deposition (PLD) of V2O5 which resulted in a thin V2O5 layer on graphene with average thickness of ~0.6 nm. According to Raman analysis, PLD process also induced defects in graphene. Compared to unmodified graphene, the obtained chemiresistive sensor showed considerable improvement of sensing ammonia at room temperature. In addition, also the response time, sensitivity and reversibility were essentially enhanced due to graphene functionalisation by laser deposited V2O5. This can be explained by increased surface density of gas adsorption sites introduced by high energy atoms in laser ablation plasma and formation of nanophase boundaries between deposited V2O5 and graphene.
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Submitted 16 March, 2018;
originally announced March 2018.
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Highly sensitive NO2 sensors by pulsed laser deposition on graphene
Authors:
Margus Kodu,
Artjom Berholts,
Tauno Kahro,
Tea Avarmaa,
Aarne Kasikov,
Ahti Niilisk,
Harry Alles,
Raivo Jaaniso
Abstract:
Graphene as a single-atomic-layer material is fully exposed to environment and has therefore a great potential for creating of sensitive gas sensors. However, in order to realize this potential for different polluting gases, graphene has to be functionalized - adsorption centers of different type and with high affinity to target gases have to be created at its surface. In this present work, modifi…
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Graphene as a single-atomic-layer material is fully exposed to environment and has therefore a great potential for creating of sensitive gas sensors. However, in order to realize this potential for different polluting gases, graphene has to be functionalized - adsorption centers of different type and with high affinity to target gases have to be created at its surface. In this present work, modification of graphene by small amounts of laser ablated materials is introduced for this purpose as a versatile and precise tool. The approach was demonstrated with two very different materials chosen for pulsed laser deposition (PLD), a metal (Ag) and a dielectric oxide (ZrO2). It was shown that the gas response and its recovery rate can be significantly enhanced by choosing the PLD target material and deposition conditions. The response to NO2 gas in air was amplified up to 40 times in case of PLD-modified graphene in comparison with pristine graphene and reached 7-8% at 40 ppb of NO2 and 20-30% at 1 ppm of N2. These results were obtained after PLD in gas environment (5 x 10-2 mbar oxygen or nitrogen) and atomic areal densities of deposited materials of were about 10 15 cm-2. The ultimate level of NO2 detection in air, as extrapolated from the experimental data obtained at room temperature under mild UV-excitation, was below 1 ppb.
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Submitted 16 March, 2018;
originally announced March 2018.
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The optical properties of transferred graphene and the dielectrics grown on it obtained by ellipsometry
Authors:
Aarne Kasikov,
Tauno Kahro,
Leonard Matisen,
Margus Kodu,
Aivar Tarre,
Helina Seemen,
Harry Alles
Abstract:
Graphene layers grown by chemical vapour deposition (CVD) method and transferred from Cu-foils to the oxidized Si-substrates were investigated by spectroscopic ellipsometry (SE), Raman and X-Ray Photoelectron Spectroscopy (XPS) methods. The optical properties of transferred CVD graphene layers do not always correspond to the ones of the exfoliated graphene due to the contamination from the chemica…
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Graphene layers grown by chemical vapour deposition (CVD) method and transferred from Cu-foils to the oxidized Si-substrates were investigated by spectroscopic ellipsometry (SE), Raman and X-Ray Photoelectron Spectroscopy (XPS) methods. The optical properties of transferred CVD graphene layers do not always correspond to the ones of the exfoliated graphene due to the contamination from the chemicals used in the transfer process. However, the real thickness and the mean properties of the transferred CVD graphene layers can be found using ellipsometry if a real thickness of the SiO2 layer is taken into account. The pulsed layer deposition (PLD) and atomic layer deposition (ALD) methods were used to grow dielectric layers on the transferred graphene and the obtained structures were characterized using optical methods. The approach demonstrated in this work could be useful for the characterization of various materials grown on graphene.
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Submitted 22 February, 2018;
originally announced February 2018.
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Temperature induced inversion of oxygen response in CVD graphene on SiO2
Authors:
Raivo Jaaniso,
Tauno Kahro,
Jekaterina Kozlova,
Jaan Aarik,
Lauri Aarik,
Harry Alles,
Aare Floren,
Alar Gerst,
Aarne Kasikov,
Ahti Niilisk,
Väino Sammelselg
Abstract:
We have synthesized single-layer graphene on Cu foils using chemical vapor deposition method and transferred the graphene to the top of a Si/SiO2 substrate with a pair of prefabricated Ti/Au electrodes. A resistive graphene-based gas sensor prepared in this way revealed n-type oxygen response at room temperature and we have successfully fitted the data obtained with varying oxygen levels using a t…
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We have synthesized single-layer graphene on Cu foils using chemical vapor deposition method and transferred the graphene to the top of a Si/SiO2 substrate with a pair of prefabricated Ti/Au electrodes. A resistive graphene-based gas sensor prepared in this way revealed n-type oxygen response at room temperature and we have successfully fitted the data obtained with varying oxygen levels using a two-site Langmuir model. P-type oxygen response of our sensor was observed after the temperature was raised to 100 oC, with a reversible transition to n-type behaviour when the temperature was lowered back to room temperature. Such inversion of the gas response type with temperature was interpreted as a result of interplay between the adsorbate-induced charge transfer and charge carrier scattering. The transduction function was derived, which relates the electrical response to surface coverage through both the induced mobility and charge density changes.
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Submitted 1 October, 2013;
originally announced October 2013.
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Nanosecond laser treatment of graphene
Authors:
Valter Kiisk,
Tauno Kahro,
Jekaterina Kozlova,
Leonard Matisen,
Harry Alles
Abstract:
Laser processing of graphene is of great interest for cutting, patterning and structural engineering purposes. Tunable nanosecond lasers have the advantage of being relatively widespread (compared to e.g. femtosecond or high-power continuous wave lasers). Hereby we have conducted an investigation of the impact of nanosecond laser pulses on CVD graphene. The damage produced by sufficiently strong s…
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Laser processing of graphene is of great interest for cutting, patterning and structural engineering purposes. Tunable nanosecond lasers have the advantage of being relatively widespread (compared to e.g. femtosecond or high-power continuous wave lasers). Hereby we have conducted an investigation of the impact of nanosecond laser pulses on CVD graphene. The damage produced by sufficiently strong single shots (pulse width 5 ns, wavelength 532 or 266 nm) from tunable optical parametric oscillator was investigated by the methods of scanning electron microscopy and optical microspectroscopy (Raman and fluorescence). Threshold of energy density for producing visible damage was found to be ~200 mJ/cm2. For UV irradiation the threshold could be notably less depending on the origin of sample. Surprisingly strong fluorescence signal was recorded from damaged areas and is attributed to the residues of oxidized graphene.
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Submitted 21 June, 2013;
originally announced June 2013.
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Atomic layer deposition of high-k oxides on graphene
Authors:
Harry Alles,
Jaan Aarik,
Jekaterina Kozlova,
Ahti Niilisk,
Raul Rammula,
Väino Sammelselg
Abstract:
Atomic layer deposition of high-k oxides on graphene.
Atomic layer deposition of high-k oxides on graphene.
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Submitted 19 September, 2011;
originally announced September 2011.
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Atomic layer deposition of HfO2 on graphene from HfCl4 and H20
Authors:
Harry Alles,
Jaan Aarik,
Aleks Aidla,
Aurelien Fay,
Jekaterina Kozlova,
Ahti Niilisk,
Martti Pärs,
Mihkel Rähn,
Maciej Wiesner,
Pertti Hakonen,
Väino Sammelselg
Abstract:
Atomic layer deposition of ultrathin HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180 degrees C. HfO2 was deposited also in a two-step temperature process where the initial growth of about 1 nm at 170 degrees C was continued up to 10-30 nm at 300 degrees C. This process yielded un…
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Atomic layer deposition of ultrathin HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180 degrees C. HfO2 was deposited also in a two-step temperature process where the initial growth of about 1 nm at 170 degrees C was continued up to 10-30 nm at 300 degrees C. This process yielded uniform, monoclinic HfO2 films with RMS roughness of 1.7 nm for 10-12 nm thick films and 2.5 nm for 30 nm thick films. Raman spectroscopy studies revealed that the deposition process caused compressive biaxial strain in graphene whereas no extra defects were generated. An 11 nm thick HfO2 film deposited onto bilayer graphene reduced the electron mobility by less than 10% at the Dirac point and by 30-40% far away from it.
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Submitted 10 May, 2010;
originally announced May 2010.
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Absence of low temperature anomaly on the melting curve of $^4$He
Authors:
I. A. Todoshchenko,
H. Alles,
H. J. Junes,
A. Ya. Parshin,
V. Tsepelin
Abstract:
We have measured the melting pressure and pressure in the liquid at constant density of ultra-pure $^4$He (0.3 ppb of $^3$He impurities) with the accuracy of about 0.5 $μ$bar in the temperature range from 10 to 320 mK. Our measurements show that the anomaly on the melting curve below 80 mK which we have recently observed is entirely due to an anomaly in the elastic modulus of Be-Cu from which ou…
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We have measured the melting pressure and pressure in the liquid at constant density of ultra-pure $^4$He (0.3 ppb of $^3$He impurities) with the accuracy of about 0.5 $μ$bar in the temperature range from 10 to 320 mK. Our measurements show that the anomaly on the melting curve below 80 mK which we have recently observed is entirely due to an anomaly in the elastic modulus of Be-Cu from which our pressure gauge is made of. We thus conclude that the melting pressure of $^4$He follows the $T^4$ law due to phonons in the whole temperature range from 10 to 320 mK without any sign of a supersolid transition.
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Submitted 26 April, 2007; v1 submitted 28 March, 2007;
originally announced March 2007.
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Melting curve of $^4$He: no sign of the supersolid transition down to 10 mK
Authors:
I. A. Todoshchenko,
H. Alles,
J. Bueno,
H. J. Junes,
A. Ya. Parshin,
V. Tsepelin
Abstract:
We have measured the melting curve of $^4$He in the temperature range from 10 to 400 mK with the accuracy of about 0.5 $μ$bar. Crystals of different quality show the expected $T^4$-dependence in the range from 80 to 400 mK without any sign of the supersolid transition, and the coefficient is in excellent agreement with available data on the sound velocity in liquid $^4$He and on the Debye temper…
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We have measured the melting curve of $^4$He in the temperature range from 10 to 400 mK with the accuracy of about 0.5 $μ$bar. Crystals of different quality show the expected $T^4$-dependence in the range from 80 to 400 mK without any sign of the supersolid transition, and the coefficient is in excellent agreement with available data on the sound velocity in liquid $^4$He and on the Debye temperature of solid $^4$He. Below 80 mK we have observed a small deviation from $T^4$-dependence which however cannot be attributed to the supersolid transition because instead of decrease the entropy of the solid rather remains constant, about $2.5\times10^{-6}$ $R$
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Submitted 27 December, 2006; v1 submitted 4 July, 2006;
originally announced July 2006.
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Torsional oscillator studies of the superfluidity of 3He in aerogel
Authors:
H. Alles,
J. J. Kaplinsky,
P. S. Wootton,
J. D. Reppy,
J. R. Hook
Abstract:
We have made simultaneous torsional oscillator and transverse NMR measurements (at 165 kHz) on 3He contained within aerogels with nominal densities of 1% and 2% of solid glass. The superfluid transition is seen simultaneously by both techniques and occurs at a temperature which agrees semi-quantitatively with that expected for homogeneous isotropic pair-breaking scattering of 3He atoms by strand…
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We have made simultaneous torsional oscillator and transverse NMR measurements (at 165 kHz) on 3He contained within aerogels with nominal densities of 1% and 2% of solid glass. The superfluid transition is seen simultaneously by both techniques and occurs at a temperature which agrees semi-quantitatively with that expected for homogeneous isotropic pair-breaking scattering of 3He atoms by strands of silica. Values obtained for the superfluid density rho_s in the 2% sample are in reasonable agreement with those observed previously. Coupling of the torsional mode to a parasitic resonance prevented accurate determination of rho_s for the 1% aerogel. We have identified other resonances coupling to the torsional oscillations as sound modes within the helium/aerogel medium.
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Submitted 31 March, 1999;
originally announced March 1999.
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Evidence for superfluid B-phase of 3He in aerogel
Authors:
H. Alles,
J. J. Kaplinsky,
P. S. Wootton,
J. D. Reppy,
J. H. Naish,
J. R. Hook
Abstract:
We have made simultaneous torsional oscillator and transverse cw NMR (at 165 kHz) studies of the superfluid phase of 3He in aerogel glasses of 1% and 2% of solid density. NMR occurs over a range of frequency extending from the Larmor frequency to higher values, but strongly peaked at the Larmor value. This behaviour together with the magnetic field independence of the effective superfluid densit…
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We have made simultaneous torsional oscillator and transverse cw NMR (at 165 kHz) studies of the superfluid phase of 3He in aerogel glasses of 1% and 2% of solid density. NMR occurs over a range of frequency extending from the Larmor frequency to higher values, but strongly peaked at the Larmor value. This behaviour together with the magnetic field independence of the effective superfluid density provides convincing evidence for a B-phase state with an n texture, in our spherical geometry, governed by the same energetic considerations as for bulk superfluid 3He-B.
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Submitted 3 August, 1999; v1 submitted 31 March, 1999;
originally announced March 1999.
