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Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Authors:
Kwan-Ho Kim,
Seyong Oh,
Merrilyn Mercy Adzo Fiagbenu,
Jeffrey Zheng,
Pariasadat Musavigharavi,
Pawan Kumar,
Nicholas Trainor,
Areej Aljarb,
Yi Wan,
Hyong Min Kim,
Keshava Katti,
Zichen Tang,
Vincent C. Tung,
Joan Redwing,
Eric A. Stach,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field…
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Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.
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Submitted 6 January, 2022;
originally announced January 2022.
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Two-dimensional plasmonic polarons in n-doped monolayer MoS2
Authors:
Fabio Caruso,
Patrick Amsalem,
Jie Ma,
Areej Aljarb,
Thorsten Schultz,
Marios Zacharias,
Vincent Tung,
Norbert Koch,
Claudia Draxl
Abstract:
We report experimental and theoretical evidence of strong electron-plasmon interaction in n-doped single-layer MoS2. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal the emergence of distinctive signatures of polaronic coupling in the electron spectral function. Calculations based on many-body perturbation theory illustrate that electronic coupling to two-dimensional (2D) carr…
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We report experimental and theoretical evidence of strong electron-plasmon interaction in n-doped single-layer MoS2. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal the emergence of distinctive signatures of polaronic coupling in the electron spectral function. Calculations based on many-body perturbation theory illustrate that electronic coupling to two-dimensional (2D) carrier plasmons provides an exhaustive explanation of the experimental spectral features and their energies. These results constitute compelling evidence of the formation of plasmon-induced polaronic quasiparticles, suggesting that highly-doped transition-metal dichalcogenides may provide a new platform to explore strong-coupling phenomena between electrons and plasmons in 2D.
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Submitted 29 April, 2021;
originally announced April 2021.
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Temperature-dependent electronic ground state charge transfer in van der Waals heterostructures
Authors:
Soohyung Park,
Haiyuan Wang,
Thorsten Schultz,
Dongguen Shin,
Ruslan Ovsyannikov,
Marios Zacharias,
Dmitrii Maksimov,
Matthias Meissner,
Yuri Hasegawa,
Takuma Yamaguchi,
Satoshi Kera,
Areej Aljarb,
Mariam Hakami,
Lain-Jong Li,
Vincent Tung,
Patrick Amsalem,
Mariana Rossi,
Norbert Koch
Abstract:
Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of states distribution of the components governs the amount of charge transfer, but a notable dependence on temperature has not yet been considered, particularly for weakly interacting systems. Here, we experimentally observe…
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Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of states distribution of the components governs the amount of charge transfer, but a notable dependence on temperature has not yet been considered, particularly for weakly interacting systems. Here, we experimentally observe that the amount of ground state charge transfer in a van der Waals heterostructure formed by monolayer MoS2 sandwiched between graphite and a molecular electron acceptor layer increases by a factor of three when going from 7 K to room temperature. State-of-the-art electronic structure calculations of the full heterostructure that account for nuclear thermal fluctuations reveal intra-component electron-phonon coupling and inter-component electronic coupling as the key factors determining the amount of charge transfer. This conclusion is rationalized by a model applicable to multi-component van der Waals heterostructures.
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Submitted 14 March, 2021;
originally announced March 2021.
