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`Maser-in-a-Shoebox': a portable plug-and-play maser device at room-temperature and zero magnetic-field
Authors:
Wern Ng,
Yongqiang Wen,
Max Attwood,
Daniel C Jones,
Mark Oxborrow,
Neil McN. Alford,
Daan M. Arroo
Abstract:
Masers, the microwave analogues of lasers, have seen a renaissance owing to the discovery of gain media that mase at room-temperature and zero-applied magnetic field. However, despite the ease with which the devices can be demonstrated under ambient conditions, achieving the ubiquity and portability which lasers enjoy has to date remained challenging. We present a maser device with a miniaturized…
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Masers, the microwave analogues of lasers, have seen a renaissance owing to the discovery of gain media that mase at room-temperature and zero-applied magnetic field. However, despite the ease with which the devices can be demonstrated under ambient conditions, achieving the ubiquity and portability which lasers enjoy has to date remained challenging. We present a maser device with a miniaturized maser cavity, gain material and laser pump source that fits within the size of a shoebox. The gain medium used is pentacene-doped in para-terphenyl and it is shown to give a strong masing signal with a peak power of -5 dBm even within a smaller form factor. The device is also shown to mase at different frequencies within a small range of 1.5 MHz away from the resonant frequency. The portability and simplicity of the device, which weighs under 5 kg, paves the way for demonstrators particularly in the areas of low-noise amplifiers, quantum sensors, cavity quantum electrodynamics and long-range communications.
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Submitted 13 October, 2023;
originally announced October 2023.
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Exploring the Spin Dynamics of a Room-Temperature Diamond Maser using an Extended rate Equation Model
Authors:
Yongqiang Wen,
Philip L. Diggle,
Neil McN. Alford,
Daan M. Arroo
Abstract:
Masers - the microwave analogue of lasers - are coherent microwave sources that can act as oscillators or quantum-limited amplifiers. Masers have historically required high vacuum and cryogenic temperatures to operate, but recently masers based on diamond have been demonstrated to operate at room temperature and pressure, opening a route to new applications as ultra-low noise microwave amplifiers.…
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Masers - the microwave analogue of lasers - are coherent microwave sources that can act as oscillators or quantum-limited amplifiers. Masers have historically required high vacuum and cryogenic temperatures to operate, but recently masers based on diamond have been demonstrated to operate at room temperature and pressure, opening a route to new applications as ultra-low noise microwave amplifiers. For these new applications to become feasible at a mass scale, it is important to optimise diamond masers by minimising their size and maximising their gain, as well as the maximum input power of signals that can be amplified. Here, we develop and numerically solve an extended rate equation model to present a detailed phenomenology of masing dynamics and determine the optimal properties required for the cavity, resonator and gain medium in order to develop portable maser devices. We conclude by suggesting how the material parameters of the diamond gain media and dielectric resonators used in diamond masers can be optimised and how rate equation models could be further developed to incorporate the effects of temperature and nitrogen concentration on spin lifetimes.
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Submitted 7 April, 2023; v1 submitted 6 April, 2023;
originally announced April 2023.
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Optimizing hot electron harvesting at planar metal-semiconductor interfaces with titanium oxynitride thin films
Authors:
Brock Doiron,
Yi Li,
Andrei Mihai,
Stefano Dal Forno,
Sarah Fearn,
Lesley F. Cohen,
Neil M. Alford,
Johannes Lischner,
Peter Petrov,
Stefan A. Maier,
Rupert F. Oulton
Abstract:
Understanding metal-semiconductor interfaces is critical to the advancement of photocatalysis and sub-bandgap solar energy harvesting where sub-bandgap photons can be excited and extracted into the semiconductor. In this work, we compare the electron extraction efficiency across Au/TiO2 and titanium oxynitride/TiO2-x interfaces, where in the latter case the spontaneously forming oxide layer (TiO2-…
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Understanding metal-semiconductor interfaces is critical to the advancement of photocatalysis and sub-bandgap solar energy harvesting where sub-bandgap photons can be excited and extracted into the semiconductor. In this work, we compare the electron extraction efficiency across Au/TiO2 and titanium oxynitride/TiO2-x interfaces, where in the latter case the spontaneously forming oxide layer (TiO2-x) creates a metal-semiconductor contact. Time-resolved pump-probe spectroscopy is used to study the electron recombination rates in both cases. Unlike the nanosecond recombination lifetimes in Au/TiO2, we find a bottleneck in the electron relaxation in the TiON system, which we explain using a trap-mediated recombination model. Using this model, we investigate the tunability of the relaxation dynamics with oxygen content in the parent film. The optimized film (TiO0.5N0.5) exhibits the highest carrier extraction efficiency, slowest trapping and an appreciable hot electron population reaching the surface oxide. Our results demonstrate the productive role oxygen can play in enhancing electron harvesting and elongating electron lifetimes providing an optimized metal-semiconductor interface using only the native oxide of titanium oxynitride.
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Submitted 10 July, 2018;
originally announced July 2018.
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Multiphase strontium molybdate thin films for plasmonic local heating applications
Authors:
Matthew P. Wells,
Bin Zou,
Andrei P. Mihai,
Ryan Bower,
Anna Regoutz,
Sarah Fearn,
Stefan A. Maier,
Neil McN. Alford,
Peter K. Petrov
Abstract:
In the search for alternative plasmonic materials SrMoO3 has recently been identified as possessing a number of desirable optical properties. Owing to the requirement for many plasmonic devices to operate at elevated temperatures however, it is essential to characterize the degradation of these properties upon heating. Here, SrMoO3 thin films are annealed in air at temperatures ranging from 75 - 5…
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In the search for alternative plasmonic materials SrMoO3 has recently been identified as possessing a number of desirable optical properties. Owing to the requirement for many plasmonic devices to operate at elevated temperatures however, it is essential to characterize the degradation of these properties upon heating. Here, SrMoO3 thin films are annealed in air at temperatures ranging from 75 - 500° C. Characterizations by AFM, XRD, and spectroscopic ellipsometry after each anneal identify a loss of metallic behaviour after annealing at 500° C, together with the underlying mechanism. Moreover, it is shown that by annealing the films in nitrogen following deposition, an additional crystalline phase of SrMoO4 is induced at the film surface, which suppresses oxidation at elevated temperatures.
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Submitted 8 March, 2018;
originally announced March 2018.
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Stability of Thin Film Refractory Plasmonic Materials Taken to High Temperatures in Air
Authors:
Matthew P. Wells,
Gomathi Gobalakrichenane,
Ryan Bower,
Bin Zou,
Rebecca Kilmurray,
Andrei P. Mihai,
Neil McN. Alford,
Rupert F. M. Oulton,
Lesley F. Cohen,
Stefan A. Maier,
Anatoly V. Zayats,
Peter K. Petrov
Abstract:
Materials such as W, TiN, and SrRuO3 (SRO) have been suggested as promising alternatives to Au and Ag in plasmonic applications owing to their refractory properties. However, investigation of the reproducibility of the optical properties after thermal cycling at high operational temperatures is so far lacking. Here, thin films of W, Mo, Ti, TiN, TiON, Ag, Au, and SrRuO3 are investigated to assess…
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Materials such as W, TiN, and SrRuO3 (SRO) have been suggested as promising alternatives to Au and Ag in plasmonic applications owing to their refractory properties. However, investigation of the reproducibility of the optical properties after thermal cycling at high operational temperatures is so far lacking. Here, thin films of W, Mo, Ti, TiN, TiON, Ag, Au, and SrRuO3 are investigated to assess their viability for robust refractory plasmonic applications. Films ranging in thickness from 50 - 180 nm are deposited on MgO and Si substrates by RF magnetron sputtering and, in the case of SrRuO3, pulsed laser deposition, prior to characterisation by means of AFM, XRD, spectroscopic ellipsometry, and DC resistivity. Measurements are conducted before and after annealing in air at temperatures ranging from 300 - 1000° C for one hour, to establish the maximum cycling temperature and potential longevity at temperature for each material. It is found that SrRuO3 retains metallic behaviour after annealing at 800° C, however, importantly, the optical properties of TiN and TiON are degraded as a result of oxidation. Nevertheless, both TiN and TiON may be better suited than Au or SRO for high temperature applications operating under vacuum conditions.
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Submitted 24 November, 2017;
originally announced November 2017.
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Continuous-wave room-temperature diamond maser
Authors:
Jonathan D. Breeze,
Juna Sathian,
Enrico Salvadori,
Neil McN. Alford,
Christopher W. M. Kay
Abstract:
The maser, older sibling of the laser, has been confined to relative obscurity due to its reliance on cryogenic refrigeration and high-vacuum systems. Despite this it has found application in deep-space communications and radio astronomy due to its unparalleled performance as a low-noise amplifier and oscillator. The recent demonstration of a room-temperature solid- state maser exploiting photo-ex…
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The maser, older sibling of the laser, has been confined to relative obscurity due to its reliance on cryogenic refrigeration and high-vacuum systems. Despite this it has found application in deep-space communications and radio astronomy due to its unparalleled performance as a low-noise amplifier and oscillator. The recent demonstration of a room-temperature solid- state maser exploiting photo-excited triplet states in organic pentacene molecules paves the way for a new class of maser that could find applications in medicine, security and sensing, taking advantage of its sensitivity and low noise. However, to date, only pulsed operation has been observed in this system. Furthermore, organic maser molecules have poor thermal and mechanical properties, and their triplet sub-level decay rates make continuous emission challenging: alternative materials are therefore required. Therefore, inorganic materials containing spin-defects such as diamond and silicon carbide have been proposed. Here we report a continuous-wave (CW) room-temperature maser oscillator using optically pumped charged nitrogen-vacancy (NV) defect centres in diamond. This demonstration unlocks the potential of room-temperature solid-state masers for use in a new generation of microwave devices.
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Submitted 20 October, 2017;
originally announced October 2017.
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Titanium oxynitride thin films with tunable double epsilon-near-zero behaviour
Authors:
Laurentiu Braic,
Nikolaos Vasilantonakis,
Andrei P. Mihai,
Ignacio J. Villar Garcia,
Sarah Fearn,
Bin Zou,
Brock Doiron,
Rupert F. Oulton,
Lesley Cohen,
Stefan A. Maier,
Neil McN. Alford,
Anatoly V. Zayats,
Peter K. Petrov
Abstract:
Titanium Oxynitride (TiOxNy) thin films are fabricated using reactive magnetron sputtering. The mechanism of their growth formation is explained and their optical properties are presented. The films grown when the level of residual Oxygen in the background vacuum was between 5E-9Torr to 20E-9Torr exhibit double Epsilon-Near-Zero (2-ENZ) behaviour with ENZ1 and ENZ2 wavelengths tunable in the 700-8…
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Titanium Oxynitride (TiOxNy) thin films are fabricated using reactive magnetron sputtering. The mechanism of their growth formation is explained and their optical properties are presented. The films grown when the level of residual Oxygen in the background vacuum was between 5E-9Torr to 20E-9Torr exhibit double Epsilon-Near-Zero (2-ENZ) behaviour with ENZ1 and ENZ2 wavelengths tunable in the 700-850 nm and in the 1100-1350 nm spectral ranges, respectively. Samples fabricated when the level of residual Oxygen in the background vacuum was above 2E-8Torr exhibit non-metallic behaviour, while the layers deposited when the level of residual Oxygen in the background vacuum was below 5E-9Torr, show metallic behaviour with a single ENZ value. The double ENZ phenomenon is related to the level of residual Oxygen in the background vacuum and is attributed to the mixture of TiN and TiOxNy/TiOx phases in the films. Varying the partial pressure of nitrogen during the deposition can further control the amount of TiN, TiOx and TiOxNy compounds in the films and, therefore, tune the screened plasma wavelength. A good approximation of the ellipsometric behaviour is achieved with Maxwell-Garnett theory for a composite film formed by a mixture of TiO2 and TiN phases suggesting that double ENZ TiOxNy films are formed by inclusions of TiN within a TiO2 matrix. These oxynitride compounds could be considered as new materials exhibiting double ENZ in the visible and near-IR spectral ranges.
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Submitted 28 March, 2017;
originally announced March 2017.
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Tunable, Low Optical Loss Strontium Molybdate Thin Films for Plasmonic Applications
Authors:
Matthew P. Wells,
Bin Zou,
Brock Doiron,
Rebecca Kilmurray,
Andrei P. Mihai,
Rupert F. M. Oulton,
Lesley F. Cohen,
Stefan A. Maier,
Neil McN. Alford,
Peter K. Petrov
Abstract:
Strontium molybdate (SrMoO3) thin films are shown to exhibit plasmonic behaviour with a zero crossover wavelength of the real part of the dielectric permittivity tunable between 600 and 950 nm (2.05 eV and 1.31 eV). The films are grown epitaxially on strontium titanate (SrTiO3), magnesium oxide (MgO), and lanthanum aluminate (LaAlO3) substrates by pulsed laser deposition. SrMoO3 is shown to have o…
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Strontium molybdate (SrMoO3) thin films are shown to exhibit plasmonic behaviour with a zero crossover wavelength of the real part of the dielectric permittivity tunable between 600 and 950 nm (2.05 eV and 1.31 eV). The films are grown epitaxially on strontium titanate (SrTiO3), magnesium oxide (MgO), and lanthanum aluminate (LaAlO3) substrates by pulsed laser deposition. SrMoO3 is shown to have optical losses lower than those of gold at the point at which the real part of the dielectric permittivity is equal to -2, while possessing low electrical resistivity of 100E-6 Ohm cm at room temperature. Spectroscopic ellipsometry measurements reveal that SrMoO3 shows plasmonic behaviour, moreover we demonstrate that the epsilon near zero (ENZ) wavelength is tunable by engineering the residual strain in the films. The relatively broadband ENZ behaviour observed in SrMoO3 demonstrates its potential suitability for transformation optics along with plasmonic applications in the visible to near infrared spectral range.
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Submitted 10 November, 2016; v1 submitted 4 November, 2016;
originally announced November 2016.
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Microstructural control and tuning of thermal conductivity in La0.67Ca0.33MnO3+/-δ
Authors:
J. A. Turcaud,
K. Morrison,
A. Berenov,
N. McN. Alford,
K. G. Sandeman,
L. F. Cohen
Abstract:
Manganites are one of only a small number of material families currently being trialled as room temperature magnetic refrigerants. Here we examine the dependence of the thermal conductivity, K, of La0.67Ca0.33MnO3+/-δ as a function of density, grain size and silver impregnation around room temperature. We use a simple effective medium model to extract relevant trends in the data and demonstrate a…
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Manganites are one of only a small number of material families currently being trialled as room temperature magnetic refrigerants. Here we examine the dependence of the thermal conductivity, K, of La0.67Ca0.33MnO3+/-δ as a function of density, grain size and silver impregnation around room temperature. We use a simple effective medium model to extract relevant trends in the data and demonstrate a threefold increase in thermal conductivity by silver impregnation.
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Submitted 26 November, 2012; v1 submitted 1 October, 2012;
originally announced October 2012.
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Prediction of the functional properties of ceramic materials from composition using artificial neural networks
Authors:
D. J. Scott,
P. V. Coveney,
J. A. Kilner,
J. C. H. Rossiny,
N. Mc N. Alford
Abstract:
We describe the development of artificial neural networks (ANN) for the prediction of the properties of ceramic materials. The ceramics studied here include polycrystalline, inorganic, non-metallic materials and are investigated on the basis of their dielectric and ionic properties. Dielectric materials are of interest in telecommunication applications where they are used in tuning and filtering…
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We describe the development of artificial neural networks (ANN) for the prediction of the properties of ceramic materials. The ceramics studied here include polycrystalline, inorganic, non-metallic materials and are investigated on the basis of their dielectric and ionic properties. Dielectric materials are of interest in telecommunication applications where they are used in tuning and filtering equipment. Ionic and mixed conductors are the subjects of a concerted effort in the search for new materials that can be incorporated into efficient, clean electrochemical devices of interest in energy production and greenhouse gas reduction applications. Multi-layer perceptron ANNs are trained using the back-propagation algorithm and utilise data obtained from the literature to learn composition-property relationships between the inputs and outputs of the system. The trained networks use compositional information to predict the relative permittivity and oxygen diffusion properties of ceramic materials. The results show that ANNs are able to produce accurate predictions of the properties of these ceramic materials which can be used to develop materials suitable for use in telecommunication and energy production applications.
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Submitted 8 March, 2007;
originally announced March 2007.
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Improving electrical properties of ferroelectric thin films by ultraviolet radiation
Authors:
Neil McN. Alford,
Aleksandr G. Gagarin,
Andrey B. Kozyrev,
Peter Kr. Petrov,
Aleksandr I. Sokolov,
Oleg I. Soldatenkov,
Valery A. Volpyas
Abstract:
Ferroelectric films in the paraelectric phase exhibit two undesirable properties: hysteresis in the voltage-capacitance characteristics and a significant relaxation time of the capacitance. Our experiments show that suppression of both of these is achieved by using ultraviolet (UV) radiation with wavelengths corresponding to the material forbidden gap. Experimentally we also observed UV radiatio…
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Ferroelectric films in the paraelectric phase exhibit two undesirable properties: hysteresis in the voltage-capacitance characteristics and a significant relaxation time of the capacitance. Our experiments show that suppression of both of these is achieved by using ultraviolet (UV) radiation with wavelengths corresponding to the material forbidden gap. Experimentally we also observed UV radiation induced modulation of thin film permittivity without an applied electric field. The observed phenomena are believed to have the same origin: UV light causes generation of non-equilibrium charge carriers and space charge redistribution inside thin ferroelectric films.
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Submitted 15 September, 2005;
originally announced September 2005.
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Temperature dependence of microwave and THz dielectric response in Srn+1TinO3n+1 (n=1-4)
Authors:
D. Noujni,
S. Kamba,
A. Pashkin,
V. Bovtun,
J. Petzelt,
A-K. Axelsson,
N. McN Alford,
P. L. Wise,
I. M. Reaney
Abstract:
The microwave, near-millimetre and infrared (IR) dielectric response of Srn+1TinO3n+1 (n=1-4) Ruddlesden-Popper homologous series was studied in the temperature range 10 to 300 K. Remarkable softening of the polar optical mode was observed in Sr4Ti3O10 and Sr5Ti4O13 which explains the increase in microwave permittivity and dielectric loss upon cooling. However, both samples have a distinct conte…
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The microwave, near-millimetre and infrared (IR) dielectric response of Srn+1TinO3n+1 (n=1-4) Ruddlesden-Popper homologous series was studied in the temperature range 10 to 300 K. Remarkable softening of the polar optical mode was observed in Sr4Ti3O10 and Sr5Ti4O13 which explains the increase in microwave permittivity and dielectric loss upon cooling. However, both samples have a distinct content of SrTiO3 dispersed between SrO layers. It is proposed therefore that the observed soft mode originates from the SrTiO3 microscopic inclusions.
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Submitted 22 January, 2004;
originally announced January 2004.
