Showing 1–21 of 21 results for author: Alexe, M

Pyramidal charged domain walls in ferroelectric BiFeO$_3$

Authors: Pavel Marton, Marek Paściak, Mauro Gonçalves, Ondřej Novák, Jiří Hlinka, Richard Beanland, Marin Alexe

Abstract: Domain structures play a crucial role in the electric, mechanical and other properties of ferroelectric materials. In this study, we uncover the physical origins of the enigmatic zigzag domain structure in the prototypical multiferroic material BiFeO$_3$. Using phase-field simulations within the Landau-Ginzburg-Devonshire framework, we demonstrate that spatially-homogeneous defect charges result i… ▽ More Domain structures play a crucial role in the electric, mechanical and other properties of ferroelectric materials. In this study, we uncover the physical origins of the enigmatic zigzag domain structure in the prototypical multiferroic material BiFeO$_3$. Using phase-field simulations within the Landau-Ginzburg-Devonshire framework, we demonstrate that spatially-homogeneous defect charges result in domain structures that closely resemble those observed experimentally. The acquired understanding of the underlying physics of pyramidal-domain formation may enable the engineering of new materials with self-assembled domain structures exhibiting defined domain periodicity at the nanometre scale, opening avenues for advanced applications. △ Less

Submitted 20 May, 2025; v1 submitted 2 January, 2025; originally announced January 2025.

Ferroelastic control of magnetic domain structure: direct imaging by Magnetic Force Microscopy

Authors: S. D. Seddon, C. R. S. Haines, T. P. A. Hase, M. R. Lees, L. M. Eng, M. Alexe, M. A. Carpenter

Abstract: Pyrrhotite, Fe$_7$S$_8$, provides an example of exceptionally strong magnetoelastic coupling through pinning of ferromagnetic domains by ferroelastic twins. Using direct imaging of both magnetic and ferroelastic domains by magnetic force microscopy (MFM), the mechanism by which this coupling controls local magnetic switching behaviour of regions on the pyrrhotite surface is revealed, and leads to… ▽ More Pyrrhotite, Fe$_7$S$_8$, provides an example of exceptionally strong magnetoelastic coupling through pinning of ferromagnetic domains by ferroelastic twins. Using direct imaging of both magnetic and ferroelastic domains by magnetic force microscopy (MFM), the mechanism by which this coupling controls local magnetic switching behaviour of regions on the pyrrhotite surface is revealed, and leads to quantitative fitting of field dependent MFM phase shifts with bulk magnetometry data. It is shown that characteristic inflection points in the magnetometry data along certain direction, in particular $[\overline 120]^*_h$ of the hexagonal parent structure, are in fact caused by ferroelastic pinning of the magnetic moments. △ Less

Submitted 27 March, 2024; originally announced March 2024.

Characterisation of ferroelectric domains in magnetite (Fe3O4)

Authors: S. D. Seddon, A. Cooper, T. Fricke, S. G. Ebbinghaus, M. Walker, T. P. A. Hase, W. J. A. Blackmore, M. Alexe

Abstract: Magnetite has long been investigated across many disciplines due to the interplay between its ferroic order parameters, namely its ferrimagnetism, ferroelasticity and ferroelectricty. Despite this, the experimental difficulty in measuring low temperature real space images of the ferroelectric domains has meant that the local behaviour of ferroelectric domains emergent below the 38 K phase transiti… ▽ More Magnetite has long been investigated across many disciplines due to the interplay between its ferroic order parameters, namely its ferrimagnetism, ferroelasticity and ferroelectricty. Despite this, the experimental difficulty in measuring low temperature real space images of the ferroelectric domains has meant that the local behaviour of ferroelectric domains emergent below the 38 K phase transition have yet to be realised. This work presents real space images of the ferroelectric domains, and uses piezo force microscopy to, as a function of temperature, probe the onset of piezoelectricty and ferroelectricity across the 38 K transition △ Less

Submitted 24 October, 2023; originally announced October 2023.

Comments: 6 Pages, 3 figures

Direct Probing of Polarization Charges at the Nanoscale

Authors: Owoong Kwon, Daehee Seol, Dongkyu Lee, Hee Han, Ionela Vrejoiu, Woo Lee, Stephen Jesse, Ho Nyung Lee, Sergei V. Kalinin, Marin Alexe, Yunseok Kim

Abstract: Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it has… ▽ More Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it has been generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. However, the detection is unrelated to the radius of an AFM tip, and in fact, a matter of the switched area. In this work, we demonstrate the direct probing of the polarization charge at the nanoscale using the Positive-Up-Negative-Down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. We successfully probed the polarization charge densities of 73.7 and 119.0 uC/cm2 in ferroelectric nanocapacitors and thin films, respectively. The obtained results show the feasibility of the evaluation of the polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale. △ Less

Submitted 20 November, 2017; originally announced November 2017.

Comments: 40 pages, 17 figures

Journal ref: Adv. Mater. 30, 1703675 (2018)

Simultaneous dynamic characterization of charge and structural motion during ferroelectric switching

Authors: C. Kwamen, M. Roessle, M. Reinhardt, W. Leitenberger, F. Zamponi, M. Alexe, M. Bargheer

Abstract: Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard ferroelectric test-cycles with time-resolved x-ray diffraction to investigate the response of a nanoscale ferroelectric oxide capacitor upon charging, dischargin… ▽ More Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard ferroelectric test-cycles with time-resolved x-ray diffraction to investigate the response of a nanoscale ferroelectric oxide capacitor upon charging, discharging and switching. Piezoelectric strain develops during the electronic RC time constant and additionally during structural domain-wall creep. The complex atomic motion during ferroelectric polarization reversal starts with a negative piezoelectric response to the charge flow triggered by voltage pulses. Incomplete screening limits the compressive strain. The piezoelectric modulation of the unit cell tweaks the energy barrier between the two polarization states. Domain wall motion is evidenced by a broadening of the in-plane components of Bragg reflections. Such simultaneous measurements on a working device elucidate and visualize the complex interplay of charge flow and structural motion and challenges theoretical modelling. △ Less

Submitted 4 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 134105 (2017)

Artefacts in geometric phase analysis of compound materials

Authors: Jonathan J. P. Petersa, Richard Beanland, Marin Alexe, John W. Cockburn, Dmitry G. Revin, Shiyong Y. Zhang, Ana M. Sanchez

Abstract: The geometric phase analysis (GPA) algorithm is known as a robust and straightforward technique that can be used to measure lattice strains in high resolution transmission electron microscope (TEM) images. It is also attractive for analysis of aberration-corrected scanning TEM (ac-STEM) images that resolve every atom column, since it uses Fourier transforms and does not require real-space peak det… ▽ More The geometric phase analysis (GPA) algorithm is known as a robust and straightforward technique that can be used to measure lattice strains in high resolution transmission electron microscope (TEM) images. It is also attractive for analysis of aberration-corrected scanning TEM (ac-STEM) images that resolve every atom column, since it uses Fourier transforms and does not require real-space peak detection and assignment to appropriate sublattices. Here it is demonstrated that in ac-STEM images of compound materials (i.e. with more than one atom per unit cell) an additional phase is present in the Fourier transform. If the structure changes from one area to another in the image (e.g. across an interface), the change in this additional phase will appear as a strain in conventional GPA, even if there is no lattice strain. Strategies to avoid this pitfall are outlined. △ Less

Submitted 23 April, 2015; originally announced April 2015.

Comments: 9 pages, 7 figures, Preprint before review, submitted to Ultramicroscopy 7 April 2015

Dual gate control of bulk transport and magnetism in the spin-orbit insulator Sr2IrO4

Authors: Chengliang Lu, Shuai Dong, Andy Quindeau, Daniele Preziosi, Ni Hu, Marin Alexe

Abstract: The 5d iridates have been the subject of much recent attention due to the predictions of a large array of novel electronic phases driven by twisting strong spin-orbit coupling and Hubbard correlation. As a prototype, the single layered perovskite Sr2IrO4 was first revealed to host a Jeff=1/2 Mott insulating state. In this material, the approximate energy scale of a variety of interactions, involvi… ▽ More The 5d iridates have been the subject of much recent attention due to the predictions of a large array of novel electronic phases driven by twisting strong spin-orbit coupling and Hubbard correlation. As a prototype, the single layered perovskite Sr2IrO4 was first revealed to host a Jeff=1/2 Mott insulating state. In this material, the approximate energy scale of a variety of interactions, involving spin-orbit coupling, magnetic exchange interaction, and the Mott gap, allows close coupling among the corresponding physical excitations, opening the possibility of cross control of the physical properties. Here, we experimentally demonstrate the effective gate control of both the transport and magnetism in a Sr2IrO4-based field effect transistor using an ionic liquid dielectric. This approach could go beyond the surface-limited field effect seen in conventional transistors, reflecting the unique aspect of the Jeff=1/2 state. The simultaneous modulation of conduction and magnetism confirms the proposed intimate coupling of charge, orbital, and spin degrees of freedom in this oxide. These phenomena are probably related to an enhanced deviation from the ideal Jeff=1/2 state due to the gate-promoted conduction. The present work would have important implications in modelling the unusual physics enabled by strong spin-orbit coupling, and provides a new route to explore those emergent quantum phases in iridates. △ Less

Submitted 9 March, 2015; originally announced March 2015.

Comments: 23 pages, 8 figures

Journal ref: Published in Phys. Rev. B 91, 104401 (2015)

Crossover of conduction mechanism in Sr2IrO4 epitaxial thin films

Authors: Chengliang Lu, Andy Quindeau, Hakan Deniz, Daniele Preziosi, Dietrich Hesse, Marin Alexe

Abstract: High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior with a strong resistivity dependence on film thickness, that can be as large as three orders of magnitude at low temperature. A close examination of the transport… ▽ More High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior with a strong resistivity dependence on film thickness, that can be as large as three orders of magnitude at low temperature. A close examination of the transport data revealed interesting crossover behaviors for the conduction mechanism upon variation of thickness and temperature. While Mott variable range hopping (VRH) dominated the transport for films thinner than 85 nm, high temperature thermal activation behavior was observed for films with large thickness, which was followed by a crossover from Mott to Efros-Shklovskii (ES) VRH in the low temperature range. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~3 meV). Our results demonstrate the competing and tunable conduction in Sr2IrO4 thin films, which in turn would be helpful for understanding the insulating nature related to strong spin-orbit-coupling of the 5d iridates. △ Less

Submitted 28 August, 2014; originally announced August 2014.

Journal ref: Appl. Phys. Lett. 105, 082407 (2014)

Multiferroic Iron Oxide Thin Films at Room-Temperature

Authors: Marti Gich, Ignasi Fina, Alessio Morelli, Florencio Sanchez, Marin Alexe, Jaume Gazquez, Josep Fontcuberta, Anna Roig

Abstract: In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very c… ▽ More In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very challenging to integrate in devices. Here we report on the strategy to stabilize the metastable epsilon-Fe2O3 in thin film form, and we show that besides its already known ferrimagnetic nature, the films are also ferroelectric at 300 K with a remanent polarization of 1 microC/cm2. The film polarization shows long retention times and can be switched under small applied voltages. These characteristics make of epsilon-Fe2O3 the first single-ion transition-metal oxide which is ferro(ferri)magnetic and ferroelectric at room temperature. The simple composition of this new multiferroic oxide and the discovery of a robust path for its thin film growth may boost the exploitation of epsilon-Fe2O3 in novel devices. △ Less

Submitted 19 May, 2014; originally announced May 2014.

Comments: 27 pages, 11 figures; Advanced Materials 2014

Surface phase transitions in BiFeO3 below room temperature

Authors: R. Jarrier, X. Marti, J. Herrero-Albillos, P. Ferrer, R. Haumont, P. Gemeiner, G. Geneste, P. Berthet, T. Schülli, P. Cvec, R. Blinc, Stanislaus S. Wong, Tae-Jin Park, M. Alexe, M. A. Carpenter, J. F. Scott, G. Catalan, B. Dkhil

Abstract: We combine a wide variety of experimental techniques to analyze two heretofore mysterious phase transitions in multiferroic bismuth ferrite at low temperature. Raman spectroscopy, resonant ultrasound spectroscopy, EPR, X-ray lattice constant measurements, conductivity and dielectric response, specific heat and pyroelectric data have been collected for two different types of samples: single crystal… ▽ More We combine a wide variety of experimental techniques to analyze two heretofore mysterious phase transitions in multiferroic bismuth ferrite at low temperature. Raman spectroscopy, resonant ultrasound spectroscopy, EPR, X-ray lattice constant measurements, conductivity and dielectric response, specific heat and pyroelectric data have been collected for two different types of samples: single crystals and, in order to maximize surface/volume ratio to enhance surface phase transition effects, BiFeO3 nanotubes were also studied. The transition at T=140.3K is shown to be a surface phase transition, with an associated sharp change in lattice parameter and charge density at the surface. Meanwhile, the 201K anomaly appears to signal the onset of glassy behaviour. △ Less

Submitted 15 February, 2012; originally announced February 2012.

Comments: submitted to PRB

Journal ref: Phys. Rev. B 85, 184104 (2012)

Cross talk by extensive domain wall motion in arrays of ferroelectric nanocapacitors

Authors: Yunseok Kim, Hee Han, Ionela Vrejoiu, Woo Lee, Dietrich Hesse, Marin Alexe

Abstract: We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls start to propagate into the neighbouring capacitors initiating a significant cross-talk. The propagation paths and the propagated area into the neighbouring capa… ▽ More We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls start to propagate into the neighbouring capacitors initiating a significant cross-talk. The propagation paths and the propagated area into the neighbouring capacitors were always the same under repeated runs. The experimental and the simulated results show that the observed cross-talk is related to the capacitor parameters combined with local defects. The results can be helpful to test the reliability of nanoscale ferroelectric memory devices. △ Less

Submitted 15 November, 2011; v1 submitted 25 October, 2011; originally announced October 2011.

Journal ref: Applied Physics Letters 99, 202901 (2011)

Skin layer of BiFeO3 single crystals

Authors: X. Marti, P. Ferrer, J. Herrero-Albillos, J. Narvaez, V. Holy, N. Barrett, M. Alexe, G. Catalan

Abstract: A surface layer ("skin") that is functionally and structurally different from the bulk was found in single crystals of BiFeO3. Impedance analysis indicates that a previously reported anomaly at T* ~ 275 \pm 5 ^/circC corresponds to a phase transition confined at the surface of BiFeO3. X-ray photoelectron spectroscopy and X-ray diffraction as a function of both incidence angle and photon wavelength… ▽ More A surface layer ("skin") that is functionally and structurally different from the bulk was found in single crystals of BiFeO3. Impedance analysis indicates that a previously reported anomaly at T* ~ 275 \pm 5 ^/circC corresponds to a phase transition confined at the surface of BiFeO3. X-ray photoelectron spectroscopy and X-ray diffraction as a function of both incidence angle and photon wavelength unambiguously confirm the existence of a skin with an estimated skin depth of few nanometres, elongated out-of-plane lattice parameter, and lower electron density. Temperature-dependent x-ray diffraction has revealed that the skin's out of plane lattice parameter changes abruptly at T*, while the bulk preserves an unfeatured linear thermal expansion. The distinct properties of the skin are likely to dominate in large surface to volume ratios scenarios such as fine grained ceramics and thin films, and should be particularly relevant for electronic devices that rely on interfacial couplings such as exchange bias. △ Less

Submitted 26 March, 2011; v1 submitted 10 December, 2010; originally announced December 2010.

Comments: 8 pages, 4 figures

Electroresistance effects in ferroelectric tunnel barriers

Authors: Daniel Pantel, Marin Alexe

Abstract: Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction dependent ferroelectric barrier. The transport mechanisms, including direct tunneling, Fowler-Nordheim tunneling and thermionic injection, are considered in the calcula… ▽ More Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction dependent ferroelectric barrier. The transport mechanisms, including direct tunneling, Fowler-Nordheim tunneling and thermionic injection, are considered in the calculation of the electroresistance as a function of ferroelectric barrier properties, given by the properties of the ferroelectric, the barrier thickness, and the metal properties, and in turn of the polarization direction. Large electroresistance is favored in thicker films for all three transport mechanisms but on the expense of current density. However, switching between two transport mechanisms, i.e., direct tunneling and Fowler-Nordheim tunneling, by polarization switching yields a large electroresistance. Furthermore, the most versatile playground in optimizing the device performance was found to be the electrode properties, especially screening length and band offset with the ferroelectric. △ Less

Submitted 6 October, 2010; v1 submitted 9 June, 2010; originally announced June 2010.

Comments: 24pages, 7 figures, revised, one figure added

Journal ref: D. Pantel and M. Alexe, Physical Review B 82 (2010) 134105

Epitaxial thin films of the multiferroic double perovskite Bi2FeCrO6 grown on (100)-oriented SrTiO3 substrates: Growth, characterization, and optimization

Authors: Riad Nechache, Catalin Harnagea, Louis-Philippe Carignan, Olivier Gautreau, Lucian Pintilie, Mangala P. Singh, David Menard, Patrick Fournier, Marin Alexe, Alain Pignolet

Abstract: The influence of the deposition pressure PO2 and substrate temperature TS during the growth of Bi2FeCrO6 thin films grown by pulsed laser deposition has been investigated. It is found that the high volatility of Bi makes the deposition very difficult and that the growth of pure Bi2FeCrO6 thin films on SrTiO3 substrates is possible only in a narrow deposition parameter window. We find that the pu… ▽ More The influence of the deposition pressure PO2 and substrate temperature TS during the growth of Bi2FeCrO6 thin films grown by pulsed laser deposition has been investigated. It is found that the high volatility of Bi makes the deposition very difficult and that the growth of pure Bi2FeCrO6 thin films on SrTiO3 substrates is possible only in a narrow deposition parameter window. We find that the pure Bi2FeCrO6 phase is formed within a narrow window around an oxygen pressure PO2 =1.210-2 mbar and around a substrate temperature TS=680 degC. At lower temperature or higher pressure, Bi7.38Cr0.62O12+x_also called (b*Bi2O3)and Bi2Fe4O9 /Bi2(Fe,Cr)4O9+x phases are detected, while at lower pressure or higher temperature a (Fe,Cr)3O4 phase forms. Some of these secondary phases are not well known and have not been previously studied. We previously reported Fe/Cr cation ordering as the probable origin of the tenfold improvement in magnetization at saturation of our Bi2FeCrO6 film, compared to BiFeO3. Here, we address the effect of the degree of cationic ordering on the magnetic properties of the Bi2FeCrO6 single phase. Polarization measurements at room temperature reveal that our Bi2FeCrO6 films have excellent ferroelectric properties with ferroelectric hysteresis loops exhibiting a remanent polarization as high as 55-60 miroC/cm2 along the pseudocubic (001) direction. △ Less

Submitted 13 March, 2009; originally announced March 2009.

Comments: Manuscript accepted for publication in J. Appl. Phys (ISIF conference- multiferroics special issue)

Impact of misfit strain on the properties of tetragonal Pb(Zr,Ti)O3 thin film heterostructures

Authors: Ludwig Geske, I. B. Misirlioglu, Ionela Vrejoiu, Marin Alexe, Dietrich Hesse

Abstract: Heterostructures consisting of PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 films grown on a SrTiO3 (100) substrate with a SrRuO3 bottom electrode were prepared by pulsed laser deposition. Using the additional interface provided by the ferroelectric bilayer structure and changing the sequence of the layers, the dislocation content and domain patterns were varied. The resulting microstructure was investigat… ▽ More Heterostructures consisting of PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 films grown on a SrTiO3 (100) substrate with a SrRuO3 bottom electrode were prepared by pulsed laser deposition. Using the additional interface provided by the ferroelectric bilayer structure and changing the sequence of the layers, the dislocation content and domain patterns were varied. The resulting microstructure was investigated by transmission electron microscopy. Macroscopic ferroelectric measurements have shown a large impact of the formation of dislocations and the a/c domain structure on the ferroelectric polarization and dielectric constant. A thermodynamic analysis using the LANDAU-GINZBURG-DEVONSHIRE approach that takes into account the ratio of the thicknesses of the two ferroelectric layers and electrostatic coupling is used to describe the experimental data. △ Less

Submitted 19 March, 2008; originally announced March 2008.

Comments: 9 pages, 3 figures

Journal ref: J. Appl. Phys. 105, 061607 (2009)

Finite element method calculations of ZnO nanowires for nanogenerators

Authors: Markus Andreas Schubert, Stephan Senz, Marin Alexe, Dietrich Hesse, Ulrich Gösele

Abstract: The bending of a nonconducting piezoelectric ZnO nanowire is simulated by finite element method calculations. The top part is bent by a lateral force, which could be applied by an atomic force microscope (AFM) tip. The generated electrical potential is 0.3 V. This relatively high signal is, however, difficult to measure, due to the low capacitance of the ZnO nanowire (4x10^{-5} pF) as compared t… ▽ More The bending of a nonconducting piezoelectric ZnO nanowire is simulated by finite element method calculations. The top part is bent by a lateral force, which could be applied by an atomic force microscope (AFM) tip. The generated electrical potential is 0.3 V. This relatively high signal is, however, difficult to measure, due to the low capacitance of the ZnO nanowire (4x10^{-5} pF) as compared to the capacitance of most preamplifiers (5 pF). A further problem arises from the semiconducting properties of experimentally fabricated ZnO nanowires which causes the disappearance of the voltage signal within picoseconds. △ Less

Submitted 7 March, 2008; v1 submitted 21 February, 2008; originally announced February 2008.

Comments: submitted to Applied Physics Letters

Journal ref: Applied Physics Letters 92 (12), 122904 (2008)

Vortex Ferroelectric Domains

Authors: A. Gruverman, D. Wu, H. -J. Fan, I. Vrejoiu, M. Alexe, R. J. Harrison, J. F. Scott

Abstract: We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors. The observed effect is attributed to the formation of vortex domain during polarization swi… ▽ More We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors. The observed effect is attributed to the formation of vortex domain during polarization switching in circular capacitors. This dynamical behavior is modeled using the Landau-Liftshitz-Gilbert equations and found to be in detailed agreement with experiment. This simulation implies rotational motion of polarization in the xy-plane, a Heisenberg-like result supported by the recent model of Naumov and Fu [Phys. Rev. Lett. 98, 077603 (2007)], although not directly measurable by the present quasi-static measurements. △ Less

Submitted 1 February, 2008; originally announced February 2008.

Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown, defect-free single crystalline films

Authors: Ionela Vrejoiu, Gwenael Le Rhun, Lucian Pintilie, Dietrich Hesse, Marin Alexe, Ulrich Goesele

Abstract: PbZrxTi1-xO3 (PZT) is one of the technologically most important ferroelectric materials. Bulk single-domain single crystals of PZT have never been synthesized for a significant compositional range across the solid-solution phase diagram. This leaves the fundamental properties of PZT under debate. Synthesis of defect-free single crystalline films enables us to unambiguously determine the intrinsi… ▽ More PbZrxTi1-xO3 (PZT) is one of the technologically most important ferroelectric materials. Bulk single-domain single crystals of PZT have never been synthesized for a significant compositional range across the solid-solution phase diagram. This leaves the fundamental properties of PZT under debate. Synthesis of defect-free single crystalline films enables us to unambiguously determine the intrinsic quantities that describe ferroelectric materials, such as spontaneous polarization and dielectric constant. Defect-free single crystalline, strained PbZr0.2Ti0.8O3 thin films were grown by pulsed-laser deposition (PLD) onto vicinal SrTiO3 (001) single crystal substrates. Single crystalline SrRuO3 films fabricated by PLD were employed as bottom electrode. The PZT films have square shape hysteresis loops and remnant polarization values of up to Pr= 110 micro C/cm2, which is considerably higher than the theoretical value predicted for (unstrained) bulk single crystalline PZT of the investigated composition. The films have a dielectric constant eps33= 90 and a piezoelectric coefficient d33= 50 pm/V. △ Less

Submitted 16 January, 2006; originally announced January 2006.

Comments: 15 pages, 3 figures

Journal ref: Advanced Materials 2006, 18, 1657-1661

Metal-Ferroelectric-Metal structures with Schottky contacts: II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films

Authors: L. Pintiliea, I. Boerasu, M. J. M. Gomes, T. Zhao, R. Ramesh, M. Alexe

Abstract: A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface charge situated at a fixed distance from the interface. The presumable high concentration of structural defects acting as active electric traps is taken into a… ▽ More A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface charge situated at a fixed distance from the interface. The presumable high concentration of structural defects acting as active electric traps is taken into account by introducing a deep acceptor-like level. The model is applied on a set of metal-PZT--metal samples with different Zr/Ti ratios, deposited by different methods, and having different thickness, electrode materials, and electrode areas. The concentration of the free carriers, the fixed charge density in the depletion region, the distance between polarization charge and the physical interface, the potential barrier were estimated. △ Less

Submitted 24 August, 2005; originally announced August 2005.

Comments: 16 pages with 11 figures

Metal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties

Authors: L. Pintilie, M. Alexe

Abstract: A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface; a deep trapping level of high concentratio… ▽ More A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface; a deep trapping level of high concentration; the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as built-in voltage, charge density and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail. △ Less

Submitted 24 August, 2005; originally announced August 2005.

Comments: 14 pages with 4 figures, manuscript under revision at Journal of Applied Physics for more than 1 year (submitted May 2004, first revision September 2004, second revision May 2005)

Ferroelectric Nanotubes

Authors: F. D. Morrison, Y. Luo, I. Szafraniak, V. Nagarajan, R. B. Wehrspohn, M. Steinhart, J. H. Wendroff, N. D. Zakharov, E. D. Mishina, K. A. Vorotilov, A. S. Sigov, S. Nakabayashi, M. Alexe, R. Ramesh, J. F. Scott

Abstract: We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium bismuth tantalate SrBi2Ta2O9 (SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and por… ▽ More We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium bismuth tantalate SrBi2Ta2O9 (SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and pore wetting. Ferroelectric hysteresis and high optical nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM, XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random access memories, ink-jet printers, and photonic devices are discussed. Ferroelectric filled pores as small as 20 nm in diameter have been studied. △ Less

Submitted 28 March, 2003; originally announced March 2003.

Journal ref: Rev. Adv. Mat. Sci., 4 (2), 114-122, 2003