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Showing 1–9 of 9 results for author: Albrecht, D

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  1. arXiv:2411.18715  [pdf, other

    quant-ph cond-mat.mes-hall

    Model validation and error attribution for a drifting qubit

    Authors: Malick A. Gaye, Dylan Albrecht, Steve Young, Tameem Albash, N. Tobias Jacobson

    Abstract: Qubit performance is often reported in terms of a variety of single-value metrics, each providing a facet of the underlying noise mechanism limiting performance. However, the value of these metrics may drift over long time-scales, and reporting a single number for qubit performance fails to account for the low-frequency noise processes that give rise to this drift. In this work, we demonstrate how… ▽ More

    Submitted 12 March, 2025; v1 submitted 27 November, 2024; originally announced November 2024.

    Comments: 16 pages, 12 figures. v2. Updated to published version

    Report number: SAND2025-02995J

    Journal ref: Phys. Rev. B 111, 115303 (2025)

  2. arXiv:2401.14541  [pdf, other

    cond-mat.mes-hall quant-ph

    Characterization of individual charge fluctuators in Si/SiGe quantum dots

    Authors: Feiyang Ye, Ammar Ellaboudy, Dylan Albrecht, Rohith Vudatha, N. Tobias Jacobson, John M. Nichol

    Abstract: Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the f… ▽ More

    Submitted 12 December, 2024; v1 submitted 25 January, 2024; originally announced January 2024.

    Journal ref: Phys. Rev. B 110, 235305 (2024)

  3. arXiv:2208.03576  [pdf, other

    cond-mat.mes-hall

    A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs

    Authors: Ashwin Tunga, Kexin Li, Nicholas C. Miller, Matt Grupen, John D. Albrecht, Shaloo Rakheja

    Abstract: Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model as it is implemented in the device simulator Sentaurus from Synopsys. The electron transport and heat flow equations of the respective solvers are described in detail. The differences in the description of electron flux a… ▽ More

    Submitted 6 August, 2022; originally announced August 2022.

  4. arXiv:1208.2700  [pdf, ps, other

    hep-th cond-mat.supr-con hep-ph

    Deconstructing Superconductivity

    Authors: Dylan Albrecht, Christopher D. Carone, Joshua Erlich

    Abstract: We present a dimensionally deconstructed model of an s-wave holographic superconductor. The 2+1 dimensional model includes multiple charged Cooper pair fields and neutral exciton fields that have interactions governed by hidden local symmetries. We derive AdS/CFT-like relations for the current and charge density in the model, and we analyze properties of the Cooper pair condensates and the complex… ▽ More

    Submitted 21 August, 2012; v1 submitted 13 August, 2012; originally announced August 2012.

    Comments: 24 pages, 10 eps figures. v2: Sign conventions clarified, references added

  5. Energy levels in polarization superlattices: a comparison of continuum strain models

    Authors: B. Jogai, J. D. Albrecht, E. Pan

    Abstract: A theoretical model for the energy levels in polarization superlattices is presented. The model includes the effect of strain on the local polarization-induced electric fields and the subsequent effect on the energy levels. Two continuum strain models are contrasted. One is the standard strain model derived from Hooke's law that is typically used to calculate energy levels in polarization superl… ▽ More

    Submitted 3 November, 2003; originally announced November 2003.

    Comments: Revtex 4

    Journal ref: Semicond. Sci. Technol. 19, 733 (2004)

  6. Electromechanical coupling in free-standing AlGaN/GaN planar structures

    Authors: B. Jogai, J. D. Albrecht, E. Pan

    Abstract: The strain and electric fields present in free-standing AlGaN/GaN slabs are examined theoretically within the framework of fully-coupled continuum elastic and dielectric models. Simultaneous solutions for the electric field and strain components are obtained by minimizing the electric enthalpy. We apply constraints appropriate to pseudomorphic semiconductor epitaxial layers and obtain closed-for… ▽ More

    Submitted 12 June, 2003; originally announced June 2003.

    Comments: revtex

    Journal ref: Journal of Applied Physics 94, 6566 (2003)

  7. The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

    Authors: B. Jogai, J. D. Albrecht, E. Pan

    Abstract: The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully-coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of a two-dimensional electron gas (2DEG), the out-of-plane strain obtained without electromechanical coupling is in error by about 30% for an Al fracti… ▽ More

    Submitted 11 June, 2003; originally announced June 2003.

    Comments: 6 figures, revtex

    Journal ref: Journal of Applied Physics 94, 3984 (2003)

  8. Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

    Authors: J. D. Albrecht, D. L. Smith

    Abstract: We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four sce… ▽ More

    Submitted 24 February, 2003; originally announced February 2003.

    Comments: RevTex4

    Journal ref: Physical Review B 68, 035340 (2003)

  9. Electron Spin Injection at a Schottky Contact

    Authors: J. D. Albrecht, D. L. Smith

    Abstract: We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor doping density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interfa… ▽ More

    Submitted 7 February, 2002; originally announced February 2002.

    Comments: 4 pages, 4 figures

    Journal ref: Phys. Rev. B 66, 113303 (2002)