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A complete Raman mapping of phase transitions in Si under indentation
Authors:
C. R. Das,
H. C. Hsu,
S. Dhara,
A. K. Bhaduri,
B. Raj,
L. C. Chen,
K. H. Chen,
S. K. Albert,
A. Ray,
Y. Tzeng
Abstract:
Crystalline Si substrates are studied for pressure induced phase transformation under indentation at room temperature using Berkovich tip. Raman scattering study is used for the identification of the transformed phases. Raman line as well as area mapping are used for locating the phases in the indented region. Calculation of pressure contours in the indented region is used for understanding the…
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Crystalline Si substrates are studied for pressure induced phase transformation under indentation at room temperature using Berkovich tip. Raman scattering study is used for the identification of the transformed phases. Raman line as well as area mapping are used for locating the phases in the indented region. Calculation of pressure contours in the indented region is used for understanding the phase distribution. We report here a comprehensive study of all the phases of Si, reported so far, leading to possible understanding of material properties useful for possible electromechanical applications. As a major finding, distribution of amorphous phase in the indented region deviates from the conventional wisdom of being in the central region alone. We present phase mapping results for both Si(100) and Si(111) substrates.
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Submitted 13 July, 2008; v1 submitted 5 July, 2008;
originally announced July 2008.
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Mechanism of recrystallization process in epitaxial GaN under dynamic stress field - Atomistic origin of planar defect formation
Authors:
C. R. Das,
S. Dhara,
H. C. Hsu,
L. C. Chen,
Y. R. Jeng,
A. K. Bhaduri,
Baldev Raj,
K. H. Chen,
S. K. Albert
Abstract:
The mechanism of recrystallization in epitaxial (1000) GaN film, introduced by indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by Micro-Raman area mapping. Pop-in bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress fi…
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The mechanism of recrystallization in epitaxial (1000) GaN film, introduced by indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by Micro-Raman area mapping. Pop-in bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress field at the center of indentation for the initiation of recrystallization process. A planar defect migration mechanism is evolved. A pivotal role of vacancy migration is pointed out, for the first time, as the rate limiting factor for the dislocation dynamics initiating the recrystallization process in GaN.
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Submitted 2 May, 2009; v1 submitted 4 July, 2008;
originally announced July 2008.
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Recrystallization of epitaxial GaN under indentation
Authors:
S. Dhara,
C. R. Das,
H. C. Hsu,
Baldev Raj,
A. K. Bhaduri,
L. C. Chen,
K. H. Chen,
S. K. Albert,
Ayan Ray
Abstract:
We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman…
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We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.
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Submitted 15 April, 2008; v1 submitted 10 April, 2008;
originally announced April 2008.
