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Ion Current Rectification and Long-Range Interference in Conical Silicon Micropores
Authors:
Mark Aarts,
Willem Boon,
Blaise Cuénod,
M. Dijkstra,
René van Roij,
Esther Alarcon-Llado
Abstract:
Fluidic devices exhibiting ion current rectification (ICR), or ionic diodes, are of broad interest for applications including desalination, energy harvesting, and sensing, amongst others. For such applications a large conductance is desirable which can be achieved by simultaneously using thin membranes and wide pores. In this paper we demonstrate ICR in micron sized conical channels in a thin sili…
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Fluidic devices exhibiting ion current rectification (ICR), or ionic diodes, are of broad interest for applications including desalination, energy harvesting, and sensing, amongst others. For such applications a large conductance is desirable which can be achieved by simultaneously using thin membranes and wide pores. In this paper we demonstrate ICR in micron sized conical channels in a thin silicon membrane with pore diameters comparable to the membrane thickness but both much larger than the electrolyte screening length. We show that for these pores the entrance resistance is not only key to Ohmic conductance around 0 V, but also for understanding ICR, both of which we measure experimentally and capture within a single analytic theoretical framework. The only fit parameter in this theory is the membrane surface potential, for which we find that it is voltage dependent and its value is excessively large compared to literature. From this we infer that surface charge outside the pore strongly contributes to the observed Ohmic conductance and rectification by a different extent. We experimentally verify this hypothesis in a small array of pores and find that ICR vanishes due to pore-pore interactions mediated through the membrane surface, while Ohmic conductance around 0 V remains unaffected. We find that the pore-pore interaction for ICR is set by a long-ranged decay of the concentration which explains the surprising finding that the ICR vanishes for even a sparsely populated array with a pore-pore spacing as large as 7 $μ$m.
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Submitted 7 October, 2022; v1 submitted 28 June, 2022;
originally announced June 2022.
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Rational Strain Engineering in Delafossite Oxides for Highly Efficient Hydrogen Evolution Catalysis in Acidic Media
Authors:
Filip Podjaski,
Daniel Weber,
Siyuan Zhang,
Leo Diehl,
Roland Eger,
Viola Duppel,
Esther Alarcon-Llado,
Gunther Richter,
Frederik Haase,
Anna Fontcuberta i Morral,
Christina Scheu,
Bettina V. Lotsch
Abstract:
The rational design of hydrogen evolution reaction (HER) electrocatalysts which are competitive with platinum is an outstanding challenge to make power-to-gas technologies economically viable. Here, we introduce the delafossites PdCrO$_2$, PdCoO$_2$ and PtCoO$_2$ as a new family of electrocatalysts for the HER in acidic media. We show that in PdCoO$_2$ the inherently strained Pd metal sublattice a…
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The rational design of hydrogen evolution reaction (HER) electrocatalysts which are competitive with platinum is an outstanding challenge to make power-to-gas technologies economically viable. Here, we introduce the delafossites PdCrO$_2$, PdCoO$_2$ and PtCoO$_2$ as a new family of electrocatalysts for the HER in acidic media. We show that in PdCoO$_2$ the inherently strained Pd metal sublattice acts as a pseudomorphic template for the growth of a strained (by +2.3%) Pd rich capping layer under reductive conditions. The surface modification continuously improves the electrocatalytic activity by simultaneously increasing the exchange current density j$_0$ from 2 to 5 mA/cm$^2_{geo}$ and by reducing the Tafel slope down to 38 mV/decade, leading to overpotentials $η_{10}$ < 15 mV for 10 mA/cm$^2_{geo}$, superior to bulk platinum. The greatly improved activity is attributed to the in-situ stabilization of a $β$-palladium hydride phase with drastically enhanced surface catalytic properties with respect to pure or nanostructured palladium. These findings illustrate how operando induced electrodissolution can be used as a top-down design concept for rational surface and property engineering through the strain-stabilized formation of catalytically active phases.
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Submitted 11 March, 2019;
originally announced March 2019.
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Untangling the role of oxide in Ga-assisted growth of GaAs nanowires on Si substrates
Authors:
F. Matteini,
G. Tutuncuoglu,
D. Rüffer,
E. Alarcon-Llado,
A. Fontcuberta i Morral
Abstract:
The influence of the oxide in Ga-assisted growth of GaAs nanowires on Si substrates is investigated. Three different types of oxides with different structure and chemistry are considered. We observe that the critical oxide thicknesses needed for achieving nanowire growth depends on the nature of oxide and how it is processed. Additionally, we find that different growth conditions such as temperatu…
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The influence of the oxide in Ga-assisted growth of GaAs nanowires on Si substrates is investigated. Three different types of oxides with different structure and chemistry are considered. We observe that the critical oxide thicknesses needed for achieving nanowire growth depends on the nature of oxide and how it is processed. Additionally, we find that different growth conditions such as temperature and Ga rate are needed for successful nanowire growth on different oxides. We generalize the results in terms of the characteristics of the oxides such as surface roughness, stoichiometry and thickness. These results constitute a step further towards the integration of GaAs technology on the Si platform.
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Submitted 23 July, 2013;
originally announced July 2013.
