Showing 1–25 of 25 results for author: Akinwande, D

Understanding and predicting adsorption energetics on monolayer transition metal dichalcogenides

Authors: Brian Lee, Jameela Fatheema, Deji Akinwande, Wennie Wang

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently been shown to demonstrate non-volatile resistive switching (NVRS), offering significant advantages such as high-density integration and low energy consumption due to their atomic-scale thinness. In this study, we focus on the adsorption and desorption of metal adatoms, which can modulate the electrical resistivity by severa… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently been shown to demonstrate non-volatile resistive switching (NVRS), offering significant advantages such as high-density integration and low energy consumption due to their atomic-scale thinness. In this study, we focus on the adsorption and desorption of metal adatoms, which can modulate the electrical resistivity by several orders of magnitude. We develop material-based relationships of the adsorption energy with electronic and atomic structure descriptors by examining the effects of various transition-metal adsorbates on the surface of TMDs. Our results reveal that adsorption energies of transition metals exhibit consistent trends across different TMDs (MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$) and can be explained using simple descriptors of the atomic and electronic structure. We propose several models to describe this adsorption process, providing a deeper understanding of a crucial step in the resistive switching mechanism based on formation and dissolution of point defects. Finally, we connect our computed adsorption energies to the switching energy. These findings will help guide rational materials selection for the development of NVRS devices using 2D TMDs. △ Less

Submitted 9 October, 2024; originally announced October 2024.

Graphene-Based Artificial Dendrites for Bio-Inspired Learning in Spiking Neuromorphic Systems

Authors: Samuel Liu, Deji Akinwande, Dmitry Kireev, Jean Anne C. Incorvia

Abstract: Analog neuromorphic computing systems emulate the parallelism and connectivity of the human brain, promising greater expressivity and energy efficiency compared to digital systems. Though many devices have emerged as candidates for artificial neurons and artificial synapses, there have been few device candidates for artificial dendrites. In this work, we report on biocompatible graphene-based arti… ▽ More Analog neuromorphic computing systems emulate the parallelism and connectivity of the human brain, promising greater expressivity and energy efficiency compared to digital systems. Though many devices have emerged as candidates for artificial neurons and artificial synapses, there have been few device candidates for artificial dendrites. In this work, we report on biocompatible graphene-based artificial dendrites (GrADs) that can implement dendritic processing. By using a dual side-gate configuration, current applied through a Nafion membrane can be used to control device conductance across a trilayer graphene channel, showing spatiotemporal responses of leaky recurrent, alpha, and gaussian dendritic potentials. The devices can be variably connected to enable higher order neuronal responses, and we show through data-driven spiking neural network classification simulations that overall spiking activity is reduced by up to 15% without accuracy loss while low frequency operation is stabilized. This positions the GrADs as strong candidates for energy efficient bio-interfaced spiking neural networks. △ Less

Submitted 3 October, 2023; originally announced October 2023.

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

Authors: Xintong Li, Peng Zhou, Xuan Hu, Ethan Rivers, Kenji Watanabe, Takashi Taniguchi, Deji Akinwande, Joseph S. Friedman, Jean Anne C. Incorvia

Abstract: Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed off-state current. These circuits achieve the same logical output as CMOS with fewer transistors and offer greater flexibility in design. The primary challenge lies in… ▽ More Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed off-state current. These circuits achieve the same logical output as CMOS with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on-off ratio of 10^8 and 10^6, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. For the first time, we demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and polarity gate behavior is conducted, which has previously been lacking. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices are qualitatively analyzed. This work lays the foundation for future developments in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed and more flexible logic circuits. △ Less

Submitted 2 May, 2023; originally announced May 2023.

Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs

Authors: Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam, Anton Guimerà-Brunet, Javier Martinez, Jose Antonio Garrido, Deji Akinwande, David Jiménez

Abstract: 1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS) effect can result in the reduction of 1/f noise at high longitudinal electric fields. A new physics-based compact model is for the first time introduced for si… ▽ More 1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS) effect can result in the reduction of 1/f noise at high longitudinal electric fields. A new physics-based compact model is for the first time introduced for single- to few- layer 2D-FETs in this study, precisely validating 1/f noise experiments for various types of devices. The proposed model mainly accounts for the measured 1/f noise bias dependence as the latter is defined by different physical mechanisms. Thus, analytical expressions are derived, valid in all regions of operation in contrast to conventional approaches available in literature so far, accounting for carrier number fluctuation (DN), mobility fluctuation (Dmu}) and contact resistance (DR) effects based on the underlying physics that rules these devices. DN mechanism due to trapping/detrapping together with an intense Coulomb scattering effect, dominates 1/f noise from medium to strong accumulation region while Dmu, is also demonstrated to modestly contribute in subthreshold region. DR can also be significant in very high carrier density. The VS induced reduction of 1/f noise measurements at high electric fields, is also remarkably captured by the model. The physical validity of the model can also assist in extracting credible conclusions when conducting comparisons between experimental data from devices with different materials or dielectrics. △ Less

Submitted 30 March, 2023; originally announced March 2023.

Comments: Nanoscale, 2023, Advance Article

Multiferroic Ti$_3$C$_2$T$_x$ MXene with Tunable Ferroelectric-controlled High Performance Resistive Memory Devices

Authors: Rabia Tahir, Sabeen Fatima, Syedah Afsheen Zahra, Deji Akinwande, Syed Rizwana

Abstract: Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is rarely reported in literature. We reported a simple approach to reveal frequency-dependent ferroelectricity and mutiferroicity in Ti$_3$C$_2$T$_x$ MXene film at… ▽ More Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is rarely reported in literature. We reported a simple approach to reveal frequency-dependent ferroelectricity and mutiferroicity in Ti$_3$C$_2$T$_x$ MXene film at room-temperature. To study the frequency and poling effect on ferroelectricity as well as multiferroicity, we performed electric polarization vs. electric field measurement at different external frequencies measured under zero and non-zero static magnetic fields. In order to further investigate this effect, the magneto-electric (ME) coupling was also performed to confirm the multiferroic nature of our synthesized Ti$_3$C$_2$T$_x$ MXene film. The ferroelectric hysteresis effect was attributed to the switching of electric domain walls under low frequencies that continue to respond to at much extent to the higher frequencies. The coupling between disordered electric dipoles with local spin moments could cause presence of strong magneto-electric coupling. Moreover, the bipolar resistive switching in trilayer memory devices also supports the ferroelectric behavior of HT- Ti$_3$C$_2$T$_x$ MXene film and showed uniform repeatability in switching behavior due to minimum dielectric loss inside ferroelectric HT-Ti$_3$C$_2$T$_x$ MXene along with improved on/off ratio in comparison to non-ferroelectric Ti$_3$C$_2$T$_x$ MXene. The unique multiferroic behavior along with ferroelectric-tuned memristor devices reported here at room temperature will help understand the intrinsic nature of 2D materials and will establish novel data storage devices. △ Less

Submitted 27 August, 2022; originally announced August 2022.

Light-driven C-H bond activation mediated by 2D transition metal dichalcogenides

Authors: Jingang Li, Di Zhang, Zhongyuan Guo, Xi Jiang, Jonathan M. Larson, Haoyue Zhu, Tianyi Zhang, Yuqian Gu, Brian Blankenship, Min Chen, Zilong Wu, Suichu Huang, Robert Kostecki, Andrew M. Minor, Costas P. Grigoropoulos, Deji Akinwande, Mauricio Terrones, Joan M. Redwing, Hao Li, Yuebing Zheng

Abstract: C-H bond activation enables the facile synthesis of new chemicals. While C-H activation in short-chain alkanes has been widely investigated, it remains largely unexplored for long-chain organic molecules. Here, we report light-driven C-H activation in complex organic materials mediated by 2D transition metal dichalcogenides (TMDCs) and the resultant solid-state synthesis of luminescent carbon dots… ▽ More C-H bond activation enables the facile synthesis of new chemicals. While C-H activation in short-chain alkanes has been widely investigated, it remains largely unexplored for long-chain organic molecules. Here, we report light-driven C-H activation in complex organic materials mediated by 2D transition metal dichalcogenides (TMDCs) and the resultant solid-state synthesis of luminescent carbon dots in a spatially-resolved fashion. We unravel the efficient H adsorption and a lowered energy barrier of C-C coupling mediated by 2D TMDCs to promote C-H activation. Our results shed light on 2D materials for C-H activation in organic compounds for applications in organic chemistry, environmental remediation, and photonic materials. △ Less

Submitted 15 November, 2023; v1 submitted 16 August, 2022; originally announced August 2022.

Journal ref: Nature Communications, 2024, 15, 5546

Metaplastic and Energy-Efficient Biocompatible Graphene Artificial Synaptic Transistors for Enhanced Accuracy Neuromorphic Computing

Authors: Dmitry Kireev, Samuel Liu, Harrison Jin, T. Patrick Xiao, Christopher H. Bennett, Deji Akinwande, Jean Anne Incorvia

Abstract: CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or con… ▽ More CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/m^2 switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks. △ Less

Submitted 8 March, 2022; originally announced March 2022.

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Authors: Xintong Li, Zhida Liu, Yihan Liu, Suyogya Karki, Xiaoqin Li, Deji Akinwande, Jean Anne C. Incorvia

Abstract: Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type t… ▽ More Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR) measurements show the spatial distribution of the SVHE at different temperatures, its persistence up to 160 K, and that it can be electrically modulated via gate and drain bias. A spin/valley drift and diffusion model together with reflection spectra data is used to interpret the KR data and predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at 160 K. The excess spin and valley per unit length along the edge is calculated to be 109 per micron at 45 K, which corresponds to a spin/valley polarization on the edge of 6%. These results are important steps towards practical use of the SVHE. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Authors: Xiaohan Wu, Ruijing Ge, Yuqian Gu, Emmanuel Okogbue, Jianping Shi, Abhay Shivayogimath, Peter Bøggild, Timothy J. Booth, Yanfeng Zhang, Yeonwoong Jung, Jack C. Lee, Deji Akinwande

Abstract: Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching… ▽ More Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements. △ Less

Submitted 7 October, 2021; originally announced October 2021.

Comments: 3 pages, 5 figures, IEEE conference(2021 5th EDTM)

Journal ref: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1-3. IEEE, 2021

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Authors: Joon-Seok Kim, Nikhilesh Maity, Myungsoo Kim, Suyu Fu, Rinkle Juneja, Abhishek K. Singh, Deji Akinwande, Jung-Fu Lin

Abstract: Excitonic properties in 2D heterobilayers are closely governed by charge transfer (CT) and excitonic energy transfer (ET) at van der Waals interfaces. Various means have been employed to modulate the interlayer CT and ET, including electrical gating and modifying interlayer spacing, but with limited extent in their controllability. Here, we report a novel method to modulate these transfers in MoS2… ▽ More Excitonic properties in 2D heterobilayers are closely governed by charge transfer (CT) and excitonic energy transfer (ET) at van der Waals interfaces. Various means have been employed to modulate the interlayer CT and ET, including electrical gating and modifying interlayer spacing, but with limited extent in their controllability. Here, we report a novel method to modulate these transfers in MoS2/WS2 heterobilayer by applying compressive strain under hydrostatic pressure. Raman and photoluminescence measurements, combined with density functional theory calculations show pressure-enhanced interlayer interaction of the heterobilayer. Photoluminescence enhancement factor η of WS2 in heterobilayer decreases by five times up to ~4 GPa, suggesting a strong ET, whereas it increases by an order of magnitude at higher pressures and reaches almost unity, indicating enhanced CT. Theoretical calculations show that orbital switching in the conduction bands is responsible for the modulation of the transfers. Our findings provide a compelling approach towards effective mechanical control of CT and ET in 2D excitonic devices. △ Less

Submitted 30 August, 2021; originally announced August 2021.

Real-time detection of Ochratoxin A in wine through insight of aptamer conformation in conjunction with graphene field-effect transistor

Authors: Nikita Nekrasov, Stefan Jaric, Dmitry Kireev, Aleksei V. Emelianov, Alexey V. Orlov, Ivana Gadjanski, Petr I. Nikitin, Deji Akinwande, Ivan Bobrinetskiy

Abstract: Mycotoxins comprise a frequent type of toxins present in food and feed. The problem of mycotoxin contamination has been recently aggravated due to the increased complexity of the farm-to-fork chains, resulting in negative effects on human and animal health and, consequently, economics. The easy-to-use, on-site, on-demand, and rapid monitoring of mycotoxins in food/feed is highly desired. In this w… ▽ More Mycotoxins comprise a frequent type of toxins present in food and feed. The problem of mycotoxin contamination has been recently aggravated due to the increased complexity of the farm-to-fork chains, resulting in negative effects on human and animal health and, consequently, economics. The easy-to-use, on-site, on-demand, and rapid monitoring of mycotoxins in food/feed is highly desired. In this work, we report on an advanced mycotoxin biosensor based on an array of graphene field-effect transistors integrated on a single silicon chip. A specifically designed aptamer against Ochratoxin A (OTA) was used as a recognition element, where it was covalently attached to graphene surface via pyrenebutanoic acid, succinimidyl ester (PBASE) chemistry. Namely, an electric field stimulation was used to promote more efficient π-π stacking of PBASE to graphene. The specific G-rich aptamer strand suggest its π-π stacking on graphene in free-standing regime and reconfiguration in G-quadruplex during binding an OTA molecule. This realistic behavior of the aptamer is sensitive to the ionic strength of the analyte solution, demonstrating a 10-fold increase in sensitivity at low ionic strengths. The graphene-aptamer sensors reported here demonstrate fast assay with the lowest detection limit of 1.4 pM for OTA within a response time as low as 10 s, which is more than 30 times faster compared to any other reported aptamer-based methods for mycotoxin detection. The sensors hold comparable performance when operated in real-time within a complex matrix of wine without additional time-consuming pre-treatment. △ Less

Submitted 15 December, 2021; v1 submitted 21 April, 2021; originally announced April 2021.

Multipurpose and Reusable Ultrathin Electronic Tattoos Based on PtSe2 and PtTe2

Authors: Dmitry Kireev, Emmanuel Okogbue, Jayanth RT, Tae-Jun Ko, Yeonwoong Jung, Deji Akinwande

Abstract: Wearable bioelectronics with emphasis on the research and development of advanced person-oriented biomedical devices have attracted immense interest in the last decade. Scientists and clinicians find it essential to utilize skin-worn smart tattoos for on-demand and ambulatory monitoring of an individual's vital signs. Here we report on the development of novel ultrathin platinum-based two-dimensio… ▽ More Wearable bioelectronics with emphasis on the research and development of advanced person-oriented biomedical devices have attracted immense interest in the last decade. Scientists and clinicians find it essential to utilize skin-worn smart tattoos for on-demand and ambulatory monitoring of an individual's vital signs. Here we report on the development of novel ultrathin platinum-based two-dimensional dichalcogenide (Pt-TMDs) based electronic tattoos as advanced building blocks of future wearable bioelectronics. We made these ultrathin electronic tattoos out of large-scale synthesized platinum diselenide (PtSe2) and platinum ditelluride (PtTe2) layered materials and used them for monitoring human physiological vital signs, such as the electrical activity of the heart and the brain, muscle contractions, eye movements, and temperature. We show that both materials can be used for these applications; yet, PtTe2 was found to be the most suitable choice due to its metallic structure. In terms of sheet resistance, skin-contact, and electrochemical impedance, PtTe2 outperforms state-of-the-art gold and graphene electronic tattoos and performs on par with medical-grade Ag/AgCl gel electrodes. The PtTe2 tattoos show four times lower impedance and almost 100 times lower sheet resistance compared to monolayer graphene tattoos. One of the possible prompt implications of the work is perhaps in the development of advanced human-machine interfaces. To display the application, we built a multi-tattoo system that can easily distinguish eye movement and identify the direction of an individual's sight. △ Less

Submitted 15 October, 2020; originally announced October 2020.

Single-defect Memristor in MoS$_2$ Atomic-layer

Authors: Saban M. Hus, Ruijing Ge, Po-An Chen, Meng-Hsueh Chiang, Gavin E. Donnelly, Wonhee Ko, Fumin Huang, Liangbo Liang, An-Ping Li, Deji Akinwande

Abstract: Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has add… ▽ More Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has added a new dimension of interest owing to the prospects of size scaling and the associated benefits. However, the origin of the switching mechanism in atomic sheets remains uncertain. Here, using monolayer MoS$_2$ as a model system, atomistic imaging and spectroscopy reveal that metal substitution into sulfur vacancy results in a non-volatile change in resistance. The experimental observations are corroborated by computational studies of defect structures and electronic states. These remarkable findings provide an atomistic understanding on the non-volatile switching mechanism and open a new direction in precision defect engineering, down to a single defect, for achieving optimum performance metrics including memory density, switching energy, speed, and reliability using atomic nanomaterials. △ Less

Submitted 4 February, 2020; originally announced February 2020.

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Authors: Francisco Pasadas, Enrique G. Marin, Alejandro Toral-Lopez, Francisco G. Ruiz, Andrés Godoy, Saungeun Park, Deji Akinwande, David Jiménez

Abstract: We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-ef… ▽ More We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge-conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2 FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs. △ Less

Submitted 4 February, 2020; originally announced February 2020.

Comments: 7 pages, 6 figures

Journal ref: npj 2D Materials and Applications, vol. 3(47), 2019

Novel highest-Tc superconductivity in two-dimensional Nb2C MXene

Authors: Zaheer Ud Din Babar, M. S. Anwar, Muhammad Mumtaz, Mudassir Iqbal, Ren-Kui Zheng, Deji Akinwande, Syed Rizwan

Abstract: Currently, superconductivity in two-dimensional (2D) materials is a hot topic of research owing to their potential technological applications. Here, we report observation of superconductivity in a 2D Nb2C MXene with transition temperature of 12.5 K, which is the highest transition temperature in MXene attained till now. We systematically optimized the chemical etching process to synthesize the Nb2… ▽ More Currently, superconductivity in two-dimensional (2D) materials is a hot topic of research owing to their potential technological applications. Here, we report observation of superconductivity in a 2D Nb2C MXene with transition temperature of 12.5 K, which is the highest transition temperature in MXene attained till now. We systematically optimized the chemical etching process to synthesize the Nb2C MXene from its Nb2AlC MAX phase. The X-ray diffraction (XRD) shows a clear (002) peak indicating the successful formation of MXene as well as a significant increase in the c-lattice parameter from 13.83Å to 22.72Å that indicates the delamination of Nb2C MXene sheets as revealed by morphological study using scanning electron microscope. The Meissner effect is detected using superconducting quantum interference device (SQUID: Quantum design). Lower and upper critical fields as a function of temperature follow the Ginzburg-Landau (GL) theory indicating the superconducting nature of the Nb2C MXene. Strong-electron phonon interaction and the large density-of-states at Fermi level may cause the emergence of superconductivity at such a higher transition temperature which has theoretically been predicted for Mo2C MXene. Our work is a significant advancement in the field of research and potential applications of 2D MXene. △ Less

Submitted 16 August, 2019; v1 submitted 11 August, 2019; originally announced August 2019.

Comments: 13 pages, 5 figures

Device Chemistry of Graphene Transistors

Authors: B. C. Worley, S. Kim, T. J. Ha, S. Park, R. Haws, P. Rossky, D. Akinwande, A. Dodabalapur

Abstract: Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on a mass scale, then it must be compatible with existing semiconductor industry fabrication processes. Unfortunately, such processing introduces defects and impu… ▽ More Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on a mass scale, then it must be compatible with existing semiconductor industry fabrication processes. Unfortunately, such processing introduces defects and impurities to the graphene, which cause scattering of the charge carriers and changes in doping level. Scattering results in degradation of electrical performance, including lower mobility and Dirac point shifts. In this paper, we review methods by which to mitigate the effects of charged impurities and defects in graphene devices. Using capping layers such as fluoropolymers, statistically significant improvement of mobility, on/off ratio, and Dirac point voltage for graphene FETs have been demonstrated. These effects are also reversible and can be attributed to the presence of highly polar groups in these capping layers such as carbon-fluoride bonds in the fluoropolymer acting to electrostatically screen charged impurities and defects in or near the graphene. In other experiments, graphene FETs were exposed to vapour-phase, polar, organic molecules in an ambient environment. This resulted in significant improvement to electrical characteristics, and the magnitude of improvement to the Dirac point scaled with the dipole moment of the delivered molecule type. The potential profile produced in the plane of the graphene sheet by the impurities was calculated to be significantly reduced by the presence of polar molecules. We present strong evidence that the polar nature of capping layers or polar vapour molecules introduced to the surface of a graphene FET act to mitigate detrimental effects of charged impurities/defects. △ Less

Submitted 13 June, 2019; originally announced June 2019.

Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors

Authors: Di Wu, Wei Li, Amritesh Rai, Xiaoyu Wu, Hema C. P. Movva, Maruthi N. Yogeesh, Zhaodong Chu, Sanjay K. Banerjee, Deji Akinwande, Keji Lai

Abstract: The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical i… ▽ More The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research. △ Less

Submitted 21 February, 2019; originally announced February 2019.

Comments: 18 pages, 4 figures, Just accepted by Nano Letters

Journal ref: Nano Letters, 2019

Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets

Authors: Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Harry Chou, Sushant Sonde, Li Tao, Jack C. Lee, Deji Akinwande

Abstract: Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W; and X=S, Se) transitional metal dichalcogenides (TMDs), and insulating hexagonal boron nitride (h-BN), which alludes to the universality of this phenomenon in non-metallic… ▽ More Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W; and X=S, Se) transitional metal dichalcogenides (TMDs), and insulating hexagonal boron nitride (h-BN), which alludes to the universality of this phenomenon in non-metallic 2D monolayers, and features forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament and interfacial redox in bulk oxides and electrolytes, inspires new studies on defects, ion transport and energetics at the sharp interfaces between atomically-thin sheets and conducting electrodes. From a contemporary perspective, switching is all the more unexpected in monolayers since leakage current is a fundamental limit in ultra-thin oxides. Emerging device concepts in non-volatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the pervasive NVRS effect and the associated wide materials and engineering co-design opportunity. Experimentally, a 50 GHz radio-frequency (RF) monolayer switch is demonstrated, which opens up a new application for electronic zero-static power RF switching technology. △ Less

Submitted 13 September, 2017; originally announced September 2017.

A Review on Mechanics and Mechanical Properties of 2D Materials - Graphene and Beyond

Authors: Deji Akinwande, Christopher J. Brennan, J. Scott Bunch, Philip Egberts, Jonathan R. Felts, Huajian Gao, Rui Huang, Joon-Seok Kim, Teng Li, Yao Li, Kenneth M. Liechti, Nanshu Lu, Harold S. Park, Evan J. Reed, Peng Wang, Boris I. Yakobson, Teng Zhang, Yong-Wei Zhang, Yao Zhou, Yong Zhu

Abstract: Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. M… ▽ More Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. Mechanics is indispensable in the study of mechanical properties, both experimentally and theoretically. The coupling between the mechanical and other physical properties (thermal, electronic, optical) is also of great interest in exploring novel applications, where mechanics has to be combined with condensed matter physics to establish a scalable theoretical framework. Moreover, mechanical interactions between 2D materials and various substrate materials are essential for integrated device applications of 2D materials, for which the mechanics of interfaces (adhesion and friction) has to be developed for the 2D materials. Here we review recent theoretical and experimental works related to mechanics and mechanical properties of 2D materials. While graphene is the most studied 2D material to date, we expect continual growth of interest in the mechanics of other 2D materials beyond graphene. △ Less

Submitted 4 November, 2016; originally announced November 2016.

Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors

Authors: Di Wu, Xiao Li, Lan Luan, Xiaoyu Wu, Wei Li, Maruthi N. Yogeesh, Rudresh Ghosh, Zhaodong Chu, Deji Akinwande, Qian Niu, Keji Lai

Abstract: The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for their applications in electronics and photonics. Because of the imperfections, electrons moving on these two-dimensional (2D) crystals experience a spatia… ▽ More The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for their applications in electronics and photonics. Because of the imperfections, electrons moving on these two-dimensional (2D) crystals experience a spatially non-uniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors (FETs) by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance. △ Less

Submitted 22 July, 2016; originally announced July 2016.

Comments: 25 pages,5 figures, just accepted by Proceedings of the National Academy of Sciences 2016

Laser-assisted Oxidation of Multi-layer Tungsten Diselenide Nanosheets

Authors: Cheng Tan, Yingnan Liu, Harry Chou, Joon-Seok Kim, Di Wu, Deji Akinwande, keji Lai

Abstract: We report the structural and electrical characterization of tungsten oxides formed by illuminating multi-layer tungsten diselenide (WSe2) nanosheets with an intense laser beam in the ambient environment. A noninvasive microwave impedance microscope (MIM) was used to perform electrical imaging of the samples. The local conductivity ~100 S/m of the oxidized product, measured by the MIM and conventio… ▽ More We report the structural and electrical characterization of tungsten oxides formed by illuminating multi-layer tungsten diselenide (WSe2) nanosheets with an intense laser beam in the ambient environment. A noninvasive microwave impedance microscope (MIM) was used to perform electrical imaging of the samples. The local conductivity ~100 S/m of the oxidized product, measured by the MIM and conventional transport experiments, is much higher than that of the pristine WSe2, suggesting the formation of sub-stoichiometric WO3-x polycrystals with n-type carriers. With further efforts to improve the conductivity of the oxides, the laser-assisted oxidation process may be useful for patterning conductive features on WSe2 or forming electrical contacts to various transition metal dichalcogenides. △ Less

Submitted 21 February, 2016; originally announced February 2016.

Comments: 12 pages, 3 figures To be published in Appl. Phys. Lett.,2016

Origin of the superconductivity of WTe2 under pressure

Authors: Pengchao Lu, Joon-Seok Kim, Jing Yang, Hao Gao, Juefei Wu, Dexi Shao, Bin Li, Dawei Zhou, Jian Sun, Deji Akinwande, Jung-Fu Lin, Dingyu Xing

Abstract: Tungsten ditelluride (WTe2) has attracted significant attention due to its interesting electronic properties, such as the unsaturated magnetoresistance and superconductivity. Recently, it has been proposed to be a new type of Weyl semimetal, which is distinguished from other transition metal dichalcogenides (TMDs) from a topological prospective. Here, we study the structure of WTe2 under pressure… ▽ More Tungsten ditelluride (WTe2) has attracted significant attention due to its interesting electronic properties, such as the unsaturated magnetoresistance and superconductivity. Recently, it has been proposed to be a new type of Weyl semimetal, which is distinguished from other transition metal dichalcogenides (TMDs) from a topological prospective. Here, we study the structure of WTe2 under pressure with a crystal structure prediction and ab initio calculations combined with high pressure synchrotron X-ray diffraction and Raman spectroscopy measurements. We find that the ambient orthorhombic structure (Td) transforms into a monoclinic structure (1T') at around 4-5 GPa. As the transition pressure is very close to the critical point in recent high-pressure electrical transport measurements, the emergence of superconductivity in WTe2 under pressure is attributed to the Td-1T' structure phase transition, which associates with a sliding mechanism of the TMD layers and results in a shorter Te-Te interlayer distance compared to the intralayer ones. These results highlight the critical role of the interlayer stacking and chalcogen interactions on the electronic and superconducting properties of multilayered TMDs under hydrostatic strain environments. △ Less

Submitted 12 April, 2016; v1 submitted 2 December, 2015; originally announced December 2015.

Comments: 25 pages, manuscript together with supplemental material

Journal ref: Phys. Rev. B 94, 224512 (2016)

Thermal Oxidation of WSe2 Nano-sheets Adhered on SiO2/Si Substrates

Authors: Yingnan Liu, Cheng Tan, Harry Chou, Avinash Nayak, Di Wu, Rudresh Ghosh, Hsiao- Yu Chang, Yufeng Hao, Xiaohan Wang, Joon-Seok Kim, Richard Piner, Rodney S. Ruoff, Deji Akinwande, Keji Lai

Abstract: Due to the drastically different intralayer versus interlayer bonding strengths, the mechanical, thermal, and electrical properties of two-dimensional (2D) materials are highly anisotropic between the in-plane and out-of-plane directions. The structural anisotropy may also play a role in chemical reactions, such as oxidation, reduction, and etching. Here, the composition, structure, and electrical… ▽ More Due to the drastically different intralayer versus interlayer bonding strengths, the mechanical, thermal, and electrical properties of two-dimensional (2D) materials are highly anisotropic between the in-plane and out-of-plane directions. The structural anisotropy may also play a role in chemical reactions, such as oxidation, reduction, and etching. Here, the composition, structure, and electrical properties of mechanically exfoliated WSe2 nano- sheets on SiO2/Si substrates were studied as a function of the extent of thermal oxidation. A major component of the oxidation, as indicated from optical and Raman data, starts from the nano-sheet edges and propagates laterally towards the center. Partial oxidation also occurs in certain areas at the surface of the flakes, which are shown to be highly conductive by microwave impedance microscopy. Using secondary ion mass spectroscopy, we also observed extensive oxidation at the WSe2/SiO2 interface. The combination of multiple microcopy methods can thus provide vital information on the spatial evolution of chemical reactions on 2D materials and the nanoscale electrical properties of the reaction products. △ Less

Submitted 14 July, 2015; originally announced July 2015.

Comments: To appear in Nano Lett

Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors

Authors: Joon-Seok Kim, Yingnan Liu, Weinan Zhu, Seohee Kim, Di Wu, Li Tao, Ananth Dodabalapur, Keji Lai, Deji Akinwande

Abstract: Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness- tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal… ▽ More Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness- tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobic encapsulation. Microscopy, spectroscopy, and transport techniques were employed to elucidate the aging mechanism, which can initiate from the BP surface for bare samples, or edges for samples with thin dielectric coating highlighting the ineffectiveness of conventional scaled dielectrics. Our pioneering months-long studies indicate that a double layer of Al2O3 and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development. △ Less

Submitted 1 December, 2014; originally announced December 2014.

Comments: 22 pages, 4 figures

Journal ref: Sci. Rep. 5, 8989 (2015)

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Authors: Li Tao, Milo Holt, Jongho Lee, Harry Chou, Stephen J. McDonnell, Domingo A. Ferrer, Matias Babenco, Robert M. Wallace, Sanjay K. Banerjee, Rodney S. Ruoff, Deji Akinwande

Abstract: Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ra… ▽ More Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabricated graphene transistors on a flexible polyimide film yield a peak carrier mobility ~4,930 cm2/Vs. △ Less

Submitted 7 May, 2012; originally announced May 2012.