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Spin bottleneck in resonant tunneling through double quantum dots with different Zeeman splittings
Authors:
S. M. Huang,
Y. Tokura,
H. Akimoto,
K. Kono,
J. J. Lin,
S. Tarucha,
K. Ono
Abstract:
We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel p…
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We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel partially relieves this bottleneck effect, and the maximum current is reached when interdot detuning is half the Zeeman energy difference.
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Submitted 21 December, 2009; v1 submitted 6 April, 2009;
originally announced April 2009.
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Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO$_3$ interface by electric field
Authors:
H. Nakamura,
H. Tomita,
H. Akimoto,
R. Matsumura,
I. H. Inoue,
T. Hasegawa,
K. Kono,
Y. Tokura,
H. Takagi
Abstract:
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number…
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Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.
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Submitted 27 September, 2008;
originally announced September 2008.
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Microwave-Absorption-Induced Heating of Surface State Electrons on Liquid 3He
Authors:
Denis Konstantinov,
Hanako Isshiki,
Hikota Akimoto,
Keiya Shirahama,
Yuriy Monarkha,
Kimitoshi Kono
Abstract:
A resonance-induced change in the resistivity of the surface state electrons (SSE) exposed to the microwave (MW) radiation is observed. The MW frequency corresponds to the transition energy between two lowest Rydberg energy levels. All measurements are done with electrons over liquid 3He in a temperature range 0.45-0.65 K, in which the electron relaxation time and the MW absorption linewidth are…
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A resonance-induced change in the resistivity of the surface state electrons (SSE) exposed to the microwave (MW) radiation is observed. The MW frequency corresponds to the transition energy between two lowest Rydberg energy levels. All measurements are done with electrons over liquid 3He in a temperature range 0.45-0.65 K, in which the electron relaxation time and the MW absorption linewidth are determined by collisions with helium vapor atoms. The input MW power is varied by two orders of magnitude, and the resistivity is always found to increase. This effect is attributed to the heating of electrons with the resonance MW radiation. The temperature and the momentum relaxation rate of the hot electrons are calculated as a function of the MW power in the cell, and the Rabi frequency is determined from the comparison of the theoretical result with the experiment. In addition, the broadening of the absorption signal caused by the heating is studied experimentally, and the results are found to be in good agreement with our calculations.
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Submitted 9 November, 2007;
originally announced November 2007.
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Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films
Authors:
S. M. Huang,
T. C. Lee,
H. Akimoto,
K. Kono,
J. J. Lin
Abstract:
We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln$T$ dependent, but high-…
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We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln$T$ dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.
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Submitted 20 June, 2007;
originally announced June 2007.
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Microwave Absorption of Surface-State Electrons on Liquid $^3$He
Authors:
Hanako Isshiki,
Denis Konstantinov,
Hikota Akimoto,
Keiya Shirahama,
Kimitoshi Kono
Abstract:
We have investigated the intersubband transitions of surface state electrons (SSE) on liquid $^3$He induced by microwave radiation at temperatures from 1.1 K down to 0.01 K. Above 0.4 K, the transition linewidth is proportional to the density of $^3$He vapor atoms. This proportionality is explained well by Ando's theory, in which the linewidth is determined by the electron - vapor atom scatterin…
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We have investigated the intersubband transitions of surface state electrons (SSE) on liquid $^3$He induced by microwave radiation at temperatures from 1.1 K down to 0.01 K. Above 0.4 K, the transition linewidth is proportional to the density of $^3$He vapor atoms. This proportionality is explained well by Ando's theory, in which the linewidth is determined by the electron - vapor atom scattering. However, the linewidth is larger than the calculation by a factor of 2.1. This discrepancy strongly suggests that the theory underestimates the electron - vapor atom scattering rate. At lower temperatures, the absorption spectrum splits into several peaks. The multiple peak structure is partly attributed to the spatial inhomogeneity of the static holding electric field perpendicular to the electron sheet.
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Submitted 3 May, 2007;
originally announced May 2007.
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Giant viscosity enhancement in a spin-polarized Fermi liquid
Authors:
H. Akimoto,
J. S. Xia,
D. Candela,
W. J. Mullin,
E. D. Adams,
N. S. Sullivan
Abstract:
The viscosity is measured for a Fermi liquid, a dilute $^3$He-$^4$He mixture, under extremely high magnetic field/temperature conditions ($B \leq 14.8$ T, $T \geq 1.5$ mK). The spin splitting energy $μB$ is substantially greater than the Fermi energy $k_B T_F$; as a consequence the polarization tends to unity and s-wave quasiparticle scattering is suppressed for $T \ll T_F$. Using a novel compos…
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The viscosity is measured for a Fermi liquid, a dilute $^3$He-$^4$He mixture, under extremely high magnetic field/temperature conditions ($B \leq 14.8$ T, $T \geq 1.5$ mK). The spin splitting energy $μB$ is substantially greater than the Fermi energy $k_B T_F$; as a consequence the polarization tends to unity and s-wave quasiparticle scattering is suppressed for $T \ll T_F$. Using a novel composite vibrating-wire viscometer an enhancement of the viscosity is observed by a factor of more than 500 over its low-field value. Good agreement is found between the measured viscosity and theoretical predictions based upon a $t$-matrix formalism.
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Submitted 18 April, 2007;
originally announced April 2007.
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Mott Transition in a Valence Bond Solid Insulator with a Triangular Lattice
Authors:
Yasuhiro Shimizu,
Hikota Akimoto,
Hiroyuki Tsujii,
Akiko Tajima,
Reizo Kato
Abstract:
We have investigated the Mott transition in a quasi-two-dimensional Mott insulator EtMe$_3$P[Pd(dmit)$_2$]$_2$ with a spin-frustrated triangular lattice in hydrostatic pressure and magnetic field. In the pressure-temperature ($P$-$T$) phase diagram, a valence bond solid phase is found to neighbor the superconductor and metal phases at low temperatures. The profile of the phase diagram is common…
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We have investigated the Mott transition in a quasi-two-dimensional Mott insulator EtMe$_3$P[Pd(dmit)$_2$]$_2$ with a spin-frustrated triangular lattice in hydrostatic pressure and magnetic field. In the pressure-temperature ($P$-$T$) phase diagram, a valence bond solid phase is found to neighbor the superconductor and metal phases at low temperatures. The profile of the phase diagram is common to those of Mott insulators with antiferromagnetic order. In contrast to the antiferromagnetic Mott insulators, the resistivity in the metallic phase exhibits anomalous temperature dependence, $ρ= ρ_0 + A T^{2.5}$.
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Submitted 19 December, 2007; v1 submitted 21 December, 2006;
originally announced December 2006.
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New Evidence for Zero-Temperature Relaxation in a Spin-Polarized Fermi Liquid
Authors:
H. Akimoto,
D. Candela,
J. S. Xia,
W. J. Mullin,
E. D. Adams,
N. S. Sullivan
Abstract:
Spin-echo experiments are reported for 3He-4He solutions under extremely high B/T conditions, B=14.75 T and T >= 1.73 mK. The 3He concentration x_3 was adjusted close to the value x_c = 3.8% at which the spin rotation parameter muM_0 vanishes. In this way the transverse and longitudinal spin diffusion coefficients D_perp, D_parallel were measured while keeping |muM_0| < 1. It is found that the t…
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Spin-echo experiments are reported for 3He-4He solutions under extremely high B/T conditions, B=14.75 T and T >= 1.73 mK. The 3He concentration x_3 was adjusted close to the value x_c = 3.8% at which the spin rotation parameter muM_0 vanishes. In this way the transverse and longitudinal spin diffusion coefficients D_perp, D_parallel were measured while keeping |muM_0| < 1. It is found that the temperature dependence of D_perp deviates strongly from 1/T^2, with anisotropy temperature T_a = 4.26 +/- 0.18 mK. This value is close to the theoretical prediction for dilute solutions, and suggests that spin current relaxation remains finite as the temperature tends to zero.
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Submitted 15 September, 2002; v1 submitted 10 September, 2002;
originally announced September 2002.