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Spray-Coated Graphene/Quantum Dots Paper-Based Photodetectors
Authors:
S. Malik,
Y. Zhao,
Y. He,
X. Zhao,
H. Li,
L. G. Occhipinti,
M. Wang,
S. Akhavan
Abstract:
Paper is an ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems. When combined with nanomaterials, it can be harnessed for various Internet-of-Things applications, ranging from wearable electronics to smart packaging. In this study, we present a non-vacuum spray deposition of arrays of hybrid single layer graphene (SLG)-CsPbBr3 perovskite q…
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Paper is an ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems. When combined with nanomaterials, it can be harnessed for various Internet-of-Things applications, ranging from wearable electronics to smart packaging. In this study, we present a non-vacuum spray deposition of arrays of hybrid single layer graphene (SLG)-CsPbBr3 perovskite quantum dots (QDs) photodetectors on a paper substrate. This approach combines the advantages of two large-area techniques: chemical vapor deposition (CVD) and spray-coating. The first technique allows for the pre-deposition of CVD SLG, while the second enables the spray coating of a mask to pattern CVD SLG, electrode contacts, and photoactive QDs layers. The prepared paper-based photodetectors achieved an external responsivity of 520 A/W under 405 nm illumination at <1V operating voltage. By fabricating arrays of photodetectors on a paper substrate in the air, this work highlights the potential of this scalable approach for enabling ubiquitous electronics on paper.
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Submitted 29 November, 2023;
originally announced November 2023.
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Graphene-perovskite fibre photodetectors
Authors:
S. Akhavan,
A. Taheri Najafabadi,
S. Mignuzzi,
M. Abdi Jalebi,
A. Ruocco,
I. Paradisanos,
O. Balci,
Z. Andaji-Garmaroudi,
I. Goykhman,
L. G. Occhipinti,
E. Lidorikis,
S. D. Stranks,
A. C. Ferrari
Abstract:
The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, we prepar…
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The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, we prepare fibre PDs combining rolled graphene layers and photoactive perovskites. Conductive fibres ($\sim$500$Ω$/cm) are made by rolling single layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al$_{2}$O$_{3}$ and parylene C), another rolled SLG as channel, and perovskite as photoactive component. The resulting gate-tunable PDs have response time$\sim$5ms, with an external responsivity$\sim$22kA/W at 488nm for 1V bias. The external responsivity is two orders of magnitude higher and the response time one order of magnitude faster than state-of-the-art wearable fibre based PDs. Under bending at 4mm radius, up to$\sim$80\% photocurrent is maintained. Washability tests show$\sim$72\% of initial photocurrent after 30 cycles, promising for wearable applications.
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Submitted 19 November, 2023;
originally announced November 2023.
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Non-equilibrium Band Broadening, Gap Renormalization and Band Inversion in Black Phosphorus
Authors:
H. Hedayat,
A. Ceraso,
G. Soavi,
S. Akhavan,
A. Cadore,
C. Dallera,
G. Cerullo,
A. C. Ferrari,
E. Carpene
Abstract:
Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is crucial. Here, we investigate by time- and angle-resolved photoemission spectroscopy BP in its pristine state and in the presence of Stark splitting, chemically…
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Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is crucial. Here, we investigate by time- and angle-resolved photoemission spectroscopy BP in its pristine state and in the presence of Stark splitting, chemically induced by Cs ad-sorption. We show that photo-injected carriers trigger bandgap renormalization and a concurrent valence band attening caused by Pauli blocking. In the biased sample, photoexcitation leads to a long-lived (ns) surface photovoltage of few hundreds mV that counterbalances the Cs-induced surface band bending. This allows us to disentangle bulk from surface electronic states and to clarify the mechanism underlying the band inversion observed in bulk samples.
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Submitted 19 July, 2020;
originally announced July 2020.
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Waveguide-integrated, plasmonic enhanced graphene photodetectors
Authors:
J. E. Muench,
A. Ruocco,
M. A. Giambra,
V. Miseikis,
D. Zhang,
J. Wang,
H. F. Y. Watson,
G. C. Park,
S. Akhavan,
V. Sorianello,
M. Midrio,
A. Tomadin,
C. Coletti,
M. Romagnoli,
A. C. Ferrari,
I. Goykhman
Abstract:
We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneou…
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We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules
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Submitted 11 May, 2019;
originally announced May 2019.
