Showing 1–8 of 8 results for author: Aichele, T

Subnanosecond spectral diffusion measurement using photon correlation

Authors: Gregory Sallen, Adrien Tribu, Thomas Aichele, Régis André, Lucien Besombes, Catherine Bougerol, Maxime Richard, Serge Tatarenko, Kuntheak Kheng, Jean-Philippe Poizat

Abstract: Spectral diffusion is a result of random spectral jumps of a narrow line as a result of a fluctuating environment. It is an important issue in spectroscopy, because the observed spectral broadening prevents access to the intrinsic line properties. However, its characteristic parameters provide local information on the environment of a light emitter embedded in a solid matrix, or moving within a fl… ▽ More Spectral diffusion is a result of random spectral jumps of a narrow line as a result of a fluctuating environment. It is an important issue in spectroscopy, because the observed spectral broadening prevents access to the intrinsic line properties. However, its characteristic parameters provide local information on the environment of a light emitter embedded in a solid matrix, or moving within a fluid, leading to numerous applications in physics and biology. We present a new experimental technique for measuring spectral diffusion based on photon correlations within a spectral line. Autocorrelation on half of the line and cross-correlation between the two halves give a quantitative value of the spectral diffusion time, with a resolution only limited by the correlation set-up. We have measured spectral diffusion of the photoluminescence of a single light emitter with a time resolution of 90 ps, exceeding by four orders of magnitude the best resolution reported to date. △ Less

Submitted 3 July, 2012; originally announced July 2012.

Journal ref: Nature Photonics 4 (2010) 696

A scanning probe-based pick-and-place procedure for assembly of integrated quantum optical hybrid devices

Authors: Andreas W. Schell, Günter Kewes, Tim Schröder, Janik Wolters, Thomas Aichele, Oliver Benson

Abstract: Integrated quantum optical hybrid devices consist of fundamental constituents such as single emitters and tailored photonic nanostructures. A reliable fabrication method requires the controlled deposition of active nanoparticles on arbitrary nanostructures with highest precision. Here, we describe an easily adaptable technique that employs picking and placing of nanoparticles with an atomic force… ▽ More Integrated quantum optical hybrid devices consist of fundamental constituents such as single emitters and tailored photonic nanostructures. A reliable fabrication method requires the controlled deposition of active nanoparticles on arbitrary nanostructures with highest precision. Here, we describe an easily adaptable technique that employs picking and placing of nanoparticles with an atomic force microscope combined with a confocal setup. In this way, both the topography and the optical response can be monitored simultaneously before and after the assembly. The technique can be applied to arbitrary particles. Here, we focus on nanodiamonds containing single nitrogen vacancy centers, which are particularly interesting for quantum optical experiments on the single photon and single emitter level. △ Less

Submitted 4 July, 2011; originally announced July 2011.

Comments: The following article has been submitted to Review of Scientific Instruments. After it is published, it will be found at http://rsi.aip.org/

Subnanosecond spectral diffusion of a single quantum dot in a nanowire

Authors: G. Sallen, A. Tribu, T. Aichele, R. André, L. Besombes, C. Bougerol, M. Richard, S. Tatarenko, K. Kheng, J. -Ph. Poizat

Abstract: We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a… ▽ More We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a \emph{single} carrier wanders around in traps located in the vicinity of the quantum dot. △ Less

Submitted 4 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. B 84, 041405 (2011)

Single Defect Centers in Diamond Nanocrystals as Quantum Probes for Plasmonic Nanostructures

Authors: Andreas W. Schell, Günter Kewes, Tobias Hanke, Alfred Leitenstorfer, Rudolf Bratschitsch, Oliver Benson, Thomas Aichele

Abstract: We present two applications of a single nitrogen vacancy center in a nanodiamond as quantum probe for plasmonic nanostructures. Coupling to the nanostructures is achieved in a highly controlled manner by picking up a pre-characterized nanocrystal with an atomic force microscope and placing it at the desired position. Local launching of single excitations into a nanowire with a spatial control of f… ▽ More We present two applications of a single nitrogen vacancy center in a nanodiamond as quantum probe for plasmonic nanostructures. Coupling to the nanostructures is achieved in a highly controlled manner by picking up a pre-characterized nanocrystal with an atomic force microscope and placing it at the desired position. Local launching of single excitations into a nanowire with a spatial control of few nanometers is demonstrated. Further, a two dimensional map of the electromagnetic environment of a plasmonic bowtie antenna was derived, resembling an ultimate limit of fluorescence lifetime nanoscopy. △ Less

Submitted 10 March, 2011; originally announced March 2011.

Comments: 7 Pages, 4 Figures; assigned to Optics Express Vol. 19, No. 6

Photon correlation spectroscopy on a single quantum dot embedded in a nanowire

Authors: Gregory Sallen, Adrien Tribu, Thomas Aichele, Régis André, Catherine Bougerol, Serge Tatarenko, Kuntheak Kheng, Jean-Philippe Poizat

Abstract: We have observed strong photoluminescence from a single CdSe quantum dot embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have been identified unambiguously using photon correlation spectroscopy. This technique has provided a detailed picture of the dynamics of this new system. This type of semi conducting quantum dot turns out to be a very efficient single photon source… ▽ More We have observed strong photoluminescence from a single CdSe quantum dot embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have been identified unambiguously using photon correlation spectroscopy. This technique has provided a detailed picture of the dynamics of this new system. This type of semi conducting quantum dot turns out to be a very efficient single photon source in the visible. Its particular growth technique opens new possibilities as compared to the usual self-asssembled quantum dots. △ Less

Submitted 4 March, 2009; originally announced March 2009.

Dark exciton optical spectroscopy of a semiconducting quantum dot embedded in a nanowire

Authors: Gregory Sallen, Adrien Tribu, Thomas Aichele, Régis André, Lucien Besombes, Catherine Bougerol-Chaillout, Serge Tatarenko, Kuntheak Kheng, Jean-Philippe Poizat

Abstract: Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $ΔE = 6 $ meV b… ▽ More Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $ΔE = 6 $ meV between the dark and the bright exciton as well as the spin flip rates between these two states. △ Less

Submitted 3 March, 2009; originally announced March 2009.

Journal ref: Physical Review B 80, 8 (2009) 085310

CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K

Authors: Thomas Aichele, Adrien Tribu, Gregory Sallen, Juanita Bocquel, Edith Bellet-Amalric, Catherine Bougerol, Jean-Philippe Poizat, Kuntheak Kheng, Régis André, Serge Tatarenko

Abstract: ZnSe nanowire heterostructures were grown by molecular beam epitaxy in the vapour-liquid-solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature, cone-shaped nano-needles are formed. For hig… ▽ More ZnSe nanowire heterostructures were grown by molecular beam epitaxy in the vapour-liquid-solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature, cone-shaped nano-needles are formed. For higher growth temperature, the nanowires are uniform and have a high aspect ratio with sizes of 1-2 $μ$m in length and 20-50 nm in width as observed by scanning electron microscopy. Growing a nanowire on top of a nano-needle allows us to obtain very narrow nanorods with a diameter less than 10 nm and a low density of stacking fault defects. These results allow us the insertion of CdSe quantum dots in a ZnSe nanowire. An effcient photon anti-bunching was observed up to 220 K, demonstrating a high-temperature single-photon source. △ Less

Submitted 17 September, 2008; originally announced September 2008.

Defect-free ZnSe nanowire and nano-needle nanostructures

Authors: Thomas Aichele, Adrien Tribu, Catherine Bougerol, Kuntheak Kheng, Regis Andre, Serge Tatarenko

Abstract: We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission e… ▽ More We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies. △ Less

Submitted 8 October, 2008; v1 submitted 13 May, 2008; originally announced May 2008.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 93, 143106 (2008); DOI:10.1063/1.2991298; Published 7 October 2008