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Role of remote interfacial phonons in the resistivity of graphene
Authors:
Y. G. You,
J. H. Ahn,
B. H. Park,
Y. Kwon,
E. E. B. Campbell,
S. H. Jhang
Abstract:
The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfa…
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The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.
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Submitted 22 March, 2019;
originally announced March 2019.
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Ultrafast and widely tuneable vertical-external-cavity surface-emitting laser, mode-locked by a graphene-integrated distributed Bragg reflector
Authors:
C. A. Zaugg,
Z. Sun,
V. J. Wittwer,
D. Popa,
S. Milana,
T. Kulmala,
R. S. Sundaram,
M. Mangold,
O. D. Sieber,
M. Golling,
Y. Lee,
J. H. Ahn,
A. C. Ferrari,
U. Keller
Abstract:
We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected ligh…
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We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to$\sim$0. We use this to mode-lock a VECSEL from 935 to 981nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors, dielectric coatings on gain materials. Conversely, it can also be used to increase absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors.
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Submitted 8 October, 2013;
originally announced October 2013.
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2μm Solid-State Laser Mode-locked By Single-Layer Graphene
Authors:
A. A. Lagatsky,
Z. Sun,
T. S. Kulmala,
R. S. Sundaram,
S. Milana,
F. Torrisi,
O. L. Antipov,
Y. Lee,
J. H. Ahn,
C. T. A. Brown,
W. Sibbett,
A. C. Ferrari
Abstract:
We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing.
We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing.
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Submitted 25 October, 2012;
originally announced October 2012.
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Shifting of surface plasmon resonance due to electromagnetic coupling between graphene and Au nanoparticles
Authors:
Jing Niu,
Young Jun Shin,
Jaesung Son,
Youngbin Lee,
Jong Hyun Ahn,
Hyunsoo Yang
Abstract:
Shifting of the surface plasmon resonance wavelength induced by the variation of the thickness of insulating spacer between single layer graphene and Au nanoparticles is studied. The system demonstrates a blue shift of 29 nm as the thickness of the spacer layer increases from 0 to 15 nm. This is due to the electromagnetic coupling between the localized surface plasmons excited in the nanoparticles…
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Shifting of the surface plasmon resonance wavelength induced by the variation of the thickness of insulating spacer between single layer graphene and Au nanoparticles is studied. The system demonstrates a blue shift of 29 nm as the thickness of the spacer layer increases from 0 to 15 nm. This is due to the electromagnetic coupling between the localized surface plasmons excited in the nanoparticles and the graphene film. The strength of the coupling decays exponentially with a decay length of d/R=0.36, where d is the spacer layer thickness and R is the diameter of the Au nanoparticles. The result agrees qualitatively well with the plasmon ruler equation. Interestingly, a further increment of the spacer layer thickness induces a red shift of 17 nm in the resonance wavelength and the shift saturates when the thickness of the spacer layer increases above 20 nm.
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Submitted 23 August, 2012;
originally announced August 2012.
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Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
Authors:
Yi Zheng,
Guang-Xin Ni,
Sukang Bae,
Chun-Xiao Cong,
Orhan Kahya,
Chee-Tat Toh,
Hye Ri Kim,
Danho Im,
Ting Yu,
Jong Hyun Ahn,
Byung Hee Hong,
Barbaros Ozyilmaz
Abstract:
Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and func…
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Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr$_{0.3}$Ti$_{0.7}$)O$_{3}$ (PZT), we demonstrate ultra-low voltage operation of graphene field effect transistors within $\pm1$ V with maximum doping exceeding $10^{13}\,\mathrm{cm^{-2}}$ and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.
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Submitted 6 January, 2011;
originally announced January 2011.
