Showing 1–50 of 59 results for author: Ahn, C

Lifetime-limited Gigahertz-frequency Mechanical Oscillators with Millisecond Coherence Times

Authors: Yizhi Luo, Hilel Hagai Diamandi, Hanshi Li, Runjiang Bi, David Mason, Taekwan Yoon, Xinghan Guo, Hanlin Tang, Ryan O. Behunin, Frederick J. Walker, Charles Ahn, Peter T. Rakich

Abstract: High-frequency mechanical oscillators with long coherence times are essential to realizing a variety of high-fidelity quantum sensors, transducers, and memories. However, the unprecedented coherence times needed for quantum applications require exquisitely sensitive new techniques to probe the material origins of phonon decoherence and new strategies to mitigate decoherence in mechanical oscillato… ▽ More High-frequency mechanical oscillators with long coherence times are essential to realizing a variety of high-fidelity quantum sensors, transducers, and memories. However, the unprecedented coherence times needed for quantum applications require exquisitely sensitive new techniques to probe the material origins of phonon decoherence and new strategies to mitigate decoherence in mechanical oscillators. Here, we combine non-invasive laser spectroscopy techniques with materials analysis to identify key sources of phonon decoherence in crystalline media. Using micro-fabricated high-overtone bulk acoustic-wave resonators ($μ$HBARs) as an experimental testbed, we identify phonon-surface interactions as the dominant source of phonon decoherence in crystalline quartz; lattice distortion, subsurface damage, and high concentration of elemental impurities near the crystal surface are identified as the likely causes. Removal of this compromised surface layer using an optimized polishing process is seen to greatly enhance coherence times, enabling $μ$HBARs with Q-factors of > 240 million at 12 GHz frequencies, corresponding to > 6 ms phonon coherence times and record-level f-Q products. Complementary phonon linewidth and time-domain ringdown measurements, performed using a new Brillouin-based pump-probe spectroscopy technique, reveal negligible dephasing within these oscillators. Building on these results, we identify a path to > 100 ms coherence times as the basis for high-frequency quantum memories. These findings clearly demonstrate that, with enhanced control over surfaces, dissipation and noise can be significantly reduced in a wide range of quantum systems. △ Less

Submitted 11 April, 2025; v1 submitted 10 April, 2025; originally announced April 2025.

Comments: 23 pages, 10 figures

THz carrier dynamics in $SrTiO_{3}/LaTiO_{3}$ interface two-dimensional electron gases

Authors: Ahana Bhattacharya, Andri Darmawan, Jeong Woo Han, Frederik Steinkamp, Nicholas S. Bingham, Ryan J. Suess, Stephan Winnerl, Markus E. Grune, Eric N. Jin, Frederick J. Walker, Charles H. Ahn, Rossitza Pentcheva, Martin Mittendorff

Abstract: A two-dimensional electron gas (2DEG) forms at the interface of complex oxides like $SrTiO_{3}$ (STO) and $LaTiO_{3}$ (LTO), despite each material having a low native conductivity, as a band and a Mott insulator, respectively. The interface 2DEG hosts charge carriers with moderate charge carrier density and mobility that raised interest as a material system for applications like field-effect trans… ▽ More A two-dimensional electron gas (2DEG) forms at the interface of complex oxides like $SrTiO_{3}$ (STO) and $LaTiO_{3}$ (LTO), despite each material having a low native conductivity, as a band and a Mott insulator, respectively. The interface 2DEG hosts charge carriers with moderate charge carrier density and mobility that raised interest as a material system for applications like field-effect transistors or detectors. Of particular interest is the integration of these oxide systems in silicon technology. To this end we study the carrier dynamics in a STO/LTO/STO heterostructure epitaxially grown on Si(001) both experimentally and theoretically. Linear THz spectroscopy was performed to analyze the temperature dependent charge carrier density and mobility, which was found to be in the range of $10^{12}$ $cm^2$ and 1000 $cm^2V^{-1}s^{-1}$, respectively. Pump-probe measurements revealed a very minor optical nonlinearity caused by hot carriers with a relaxation time of several 10 ps, even at low temperature. Density functional theory calculations with a Hubbard U term on ultrathin STO-capped LTO films on STO(001) show an effective mass of 0.64-0.68 $m_{e}$. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Non-Abelian Fractional Quantum Anomalous Hall States and First Landau Level Physics in Second Moiré Band of Twisted Bilayer MoTe2

Authors: Cheong-Eung Ahn, Wonjun Lee, Kunihiro Yananose, Youngwook Kim, Gil Young Cho

Abstract: Utilizing the realistic continuum description of twisted bilayer MoTe2 and many-body exact diagonalization calculation, we establish that the second moiré band of twisted bilayer MoTe2, at a small twist angle of approximately 2°, serves as an optimal platform for achieving the long-sought non-Abelian fractional quantum anomalous Hall states without the need for external magnetic fields. Across a w… ▽ More Utilizing the realistic continuum description of twisted bilayer MoTe2 and many-body exact diagonalization calculation, we establish that the second moiré band of twisted bilayer MoTe2, at a small twist angle of approximately 2°, serves as an optimal platform for achieving the long-sought non-Abelian fractional quantum anomalous Hall states without the need for external magnetic fields. Across a wide parameter range, our exact diagonalization calculations reveal that the half-filled second moiré band demonstrates the ground state degeneracy and spectral flows, which are consistent with the pfaffian state in the first Landau level. We further elucidate that the emergence of the non-Abelian state is deeply connected to the remarkable similarity between the second moiré band and the first Landau level. Essentially, the band not only exhibits characteristics akin to the first Landau level, $\frac{1}{2π}\int_\mathrm{BZ}\mathrm{d}^2\mathbf{k}\:\mathrm{tr}\:η(\mathbf{k}) \approx 3$ where $η_{ab}(\mathbf{k})$ is the Fubini-Study metric of the band, but also that its projected Coulomb interaction closely mirrors the Haldane pseudopotentials of the first Landau level. Motivated from this observation, we introduce a novel metric of "first Landau level"-ness of a band, which quantitatively measures the alignment of the projected Coulomb interaction with the Haldane pseudopotentials in Landau levels. This metric is then compared with the global phase diagram of the half-filled second moiré band, revealing its utility in predicting the parameter region of the non-Abelian state. In addition, we uncover that the first and third moiré bands closely resemble the lowest and second Landau levels, revealing a remarkable sequential equivalence between the moiré bands and Landau levels. We finally discuss the potential implications on experiments. △ Less

Submitted 5 July, 2024; v1 submitted 28 March, 2024; originally announced March 2024.

Comments: 4.5+5.5 pages, 4+9 figures

Journal ref: Phys. Rev. B 110, L161109 (2024)

Low-energy electronic interactions in ferrimagnetic Sr2CrReO6 thin films

Authors: Guillaume Marcaud, Alex Taekyung Lee, Adam J. Hauser, F. Y. Yang, Sangjae Lee, Diego Casa, Mary Upton, Thomas Gog, Kayahan Saritas, Yilin Wang, Mark P. M. Dean, Hua Zhou, Zhan Zhang, F. J. Walker, Ignace Jarrige, Sohrab Ismail-Beigi, Charles Ahn

Abstract: We reveal in this study the fundamental low-energy landscape in the ferrimagnetic Sr2CrReO6 double perovskite and describe the underlying mechanisms responsible for the three low-energy excitations below 1.4 eV. Based on resonant inelastic x-ray scattering and magnetic dynamics calculations, and experiments collected from both Sr2CrReO6 powders and epitaxially strained thin films, we reveal a stro… ▽ More We reveal in this study the fundamental low-energy landscape in the ferrimagnetic Sr2CrReO6 double perovskite and describe the underlying mechanisms responsible for the three low-energy excitations below 1.4 eV. Based on resonant inelastic x-ray scattering and magnetic dynamics calculations, and experiments collected from both Sr2CrReO6 powders and epitaxially strained thin films, we reveal a strong competition between spin-orbit coupling, Hund's coupling, and the strain-induced tetragonal crystal field. We also demonstrate that a spin-flip process is at the origin of the lowest excitation at 200 meV, and we bring insights into the predicted presence of orbital ordering in this material. We study the nature of the magnons through a combination of ab initio and spin-wave theory calculations, and show that two nondegenerate magnon bands exist and are dominated either by rhenium or chromium spins. The rhenium band is found to be flat at about 200 meV ($\pm$25 meV) through X-L-W-U high-symmetry points and is dispersive toward $Γ$ △ Less

Submitted 17 October, 2023; originally announced October 2023.

Comments: 6 figures

Journal ref: Phys. Rev. B 108, 075132 (2023)

Emergent Quantum Phenomena of Noncentrosymmetric Charge-Density Wave in 1T-Transition Metal Dichalcogenides

Authors: Cheong-Eung Ahn, Kyung-Hwan Jin, Young-Jae Choi, Jae Whan Park, Han Woong Yeom, Ara Go, Yong Baek Kim, Gil Young Cho

Abstract: 1T-transition metal dichalcogenides (TMD) have been an exciting platform for exploring the intertwinement of charge density waves and strong correlation phenomena. While the David star structure has been conventionally considered as the underlying charge order in the literature, recent scanning tunneling probe experiments on several monolayer 1T-TMD materials have motivated a new, alternative stru… ▽ More 1T-transition metal dichalcogenides (TMD) have been an exciting platform for exploring the intertwinement of charge density waves and strong correlation phenomena. While the David star structure has been conventionally considered as the underlying charge order in the literature, recent scanning tunneling probe experiments on several monolayer 1T-TMD materials have motivated a new, alternative structure, namely the anion-centered David star structure. In this Letter, we show that this novel anion-centered David star structure manifestly breaks inversion symmetry, resulting in flat bands with pronounced Rashba spin-orbit couplings. These distinctive features unlock novel possibilities and functionalities for 1T-TMDs, including the giant spin Hall effect, the emergence of Chern bands, and spin liquid that spontaneously breaks crystalline rotational symmetry. Our findings establish promising avenues for exploring emerging quantum phenomena of monolayer 1T-TMDs with this novel noncentrosymmetric structure. △ Less

Submitted 14 June, 2024; v1 submitted 27 September, 2023; originally announced September 2023.

Comments: 4.5+12 pages, 4+14 figures

Journal ref: Phys. Rev. Lett. 132, 226401 (2024)

Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain

Authors: Jun Han Lee, Nguyen Xuan Duong, Min-Hyoung Jung, Hyun-Jae Lee, Ahyoung Kim, Youngki Yeo, Junhyung Kim, Gye-Hyeon Kim, Byeong-Gwan Cho, Jaegyu Kim, Furqan Ul Hassan Naqvi, Jong-Seong Bae, Jeehoon Kim, Chang Won Ahn, Young-Min Kim, Tae Kwon Song, Jae-Hyeon Ko, Tae-Yeong Koo, Changhee Sohn, Kibog Park, Chan-Ho Yang, Sang Mo Yang, Jun Hee Lee, Hu Young Jeong, Tae Heon Kim , et al. (1 additional authors not shown)

Abstract: Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroe… ▽ More Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO$_{3}$, which boosts square-tensile-strain to BaTiO$_{3}$ and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti$^{3+}$ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates. △ Less

Submitted 12 September, 2022; originally announced September 2022.

Comments: According to the Copyright Policy, the submission version (before peer-review and revision)

Journal ref: Advanced Materials, 2205825 (2022)

On the classification of UV completions of integrable $T \bar{T}$ deformations of CFT

Authors: Changrim Ahn, André LeClair

Abstract: It is well understood that 2d conformal field theory (CFT) deformed by an irrelevant $T\bar{T}$ perturbation of dimension $4$ has universal properties. In particular, for the most interesting cases, the theory develops a singularity in the ultra-violet (UV), signifying a shortest possible distance, with a Hagedorn transition in applications to string theory. We show that by adding an infinite numb… ▽ More It is well understood that 2d conformal field theory (CFT) deformed by an irrelevant $T\bar{T}$ perturbation of dimension $4$ has universal properties. In particular, for the most interesting cases, the theory develops a singularity in the ultra-violet (UV), signifying a shortest possible distance, with a Hagedorn transition in applications to string theory. We show that by adding an infinite number of higher $[T\bar{T}]_{s>1}$ irrelevant operators with tuned couplings, this singularity can be resolved and the theory becomes UV complete with UV central charge $c_{\rm UV}$. We propose an approach to classifying the possible UV completions that are integrable. For the Ising model with $c_{\rm IR} = \tfrac{1}{2}$ we find 3 UV completions based on a single massless Majorana fermion description with $c_{\rm UV} = \tfrac{7}{10}$ and $ \tfrac{3}{2}$, which both have ${\cal N}=1$ supersymmetry and were previously known, and we argue that these are the only solutions to our classification problem based on this spectrum of particles. We find 3 additional ones with a spectrum of 8 massless particles related to the Lie group $E_8$ appropriate to a magnetic perturbation with $c_{\rm UV} = \tfrac{21}{22} , \tfrac{15}{2}$ and $\tfrac{31}{2}$. We argue that it is likely there are more cases for this $E_8$ spectrum. We also study simpler cases based on ${\rm su(3)}$ and ${\rm su(4)}$ where we can propose complete classifications. For ${\rm su(3)}$ the infra-red (IR) theory is the 3-state Potts model with $c_{\rm IR} = \tfrac{4}{5}$ and we find 3 completions with $\tfrac{4}{5} < c_{\rm UV} \leq \tfrac{16}{5}$. For the ${\rm su(4)}$ case, which has $3$ particles and $c_{\rm IR} =1$, and we find $11$ UV completions with $1 < c_{\rm UV} \leq 5$, most of which were previously unknown. △ Less

Submitted 24 July, 2022; v1 submitted 22 May, 2022; originally announced May 2022.

Comments: 21 pages, 3 figures; references added, several minor corrections made, matches version accepted by JHEP

Journal ref: JHEP08(2022)179

Heteroepitaxial control of Fermi liquid, Hund metal, and Mott insulator phases in the single-atomic-layer limit

Authors: Jeong Rae Kim, Byungmin Sohn, Hyeong Jun Lee, Sangmin Lee, Eun Kyo Ko, Sungsoo Hahn, Sangjae Lee, Younsik Kim, Donghan Kim, Hong Joon Kim, Youngdo Kim, Jaeseok Son, Charles H. Ahn, Frederick J. Walker, Ara Go, Miyoung Kim, Choong H. Kim, Changyoung Kim, Tae Won Noh

Abstract: Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenom… ▽ More Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenomena appear within a few atomic layers from the interface, thus limiting the application of available experimental probes. Here, we utilize atomic-scale epitaxy and photoemission spectroscopy to demonstrate the interface control of correlated electronic phases in atomic-scale ruthenate--titanate heterostructures. While bulk SrRuO$_3$ is a ferromagnetic metal, the heterointerfaces exclusively realize three distinct correlated phases in the single-atomic-layer limit. Our theory reveals that atomic-scale structural proximity effects lead to the emergence of Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO$_3$. These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. △ Less

Submitted 8 March, 2022; originally announced March 2022.

Comments: 25 pages, 5 main figures, 16 supplementary figures

Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote?

Authors: Dongsoo Jang, Chulwoo Ahn, Youngjun Lee, Seungjun Lee, Hyunkyu Lee, Donghoi Kim, Young-Kyun Kwon, Jaewu Choi, Chinkyo Kim

Abstract: The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote `thru-hole' epitaxy. On a substrate with thick and symmetrically incompatible van der Waals space layer or even with a… ▽ More The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote `thru-hole' epitaxy. On a substrate with thick and symmetrically incompatible van der Waals space layer or even with a three-dimensional amorphous oxide film in-between, we demonstratively grew GaN domains through thru-holes via connectedness-initiated epitaxial lateral overgrowth, not only readily detachable but also crystallographically aligned with a substrate. Our proposed nonremote thru-hole epitaxy, which is embarrassingly straightforward and undemanding, can provide wider applicability of the benefits known to be only available by the claimed remote epitaxy. △ Less

Submitted 4 October, 2021; originally announced October 2021.

Comments: 19 pages, 5 figures, Supplementary Information (26 pages, 15 figures)

Journal ref: Adv. Mater. Interfaces, 10 (4), 2201406 (2023)

Tuning spin excitations in magnetic films by confinement

Authors: Jonathan Pelliciari, Sangjae Lee, Keith Gilmore, Jiemin Li, Yanhong Gu, Andi Barbour, Ignace Jarrige, Charles H. Ahn, Frederick J. Walker, Valentina Bisogni

Abstract: Spin excitations of magnetic thin films are the founding element for novel transport concepts in spintronics, magnonics, and magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, their behaviour in mesoscopic films is less known due to experimental limitations. Here, we employ Resonant Inelastic X-Ray Scattering to investigate the spin excitation spectru… ▽ More Spin excitations of magnetic thin films are the founding element for novel transport concepts in spintronics, magnonics, and magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, their behaviour in mesoscopic films is less known due to experimental limitations. Here, we employ Resonant Inelastic X-Ray Scattering to investigate the spin excitation spectrum in mesoscopic Fe films, from bulk-like down to 3 unit cells thick. In bulk-like samples, we find isotropic, dispersive ferromagnons consistent with the dispersion observed by neutron scattering in bulk single crystals. As the thickness is reduced, these ferromagnons survive and evolve anisotropically: renormalising to lower energies along the out-of-plane direction while retaining their dispersion in the in-plane direction. This thickness dependence is captured by simple Heisenberg model calculations accounting for the confinement in the out-of-plane direction through the loss of Fe bonds. Our findings highlight the effects of mesoscopic scaling on spin dynamics and identify thickness as a knob for fine-tuning and controlling magnetic properties in films. △ Less

Submitted 17 October, 2020; originally announced October 2020.

Comments: 17 pages, 4, figure, submitted

Journal ref: Nat. Mat. (2021)

Highly ordered lead-free double perovskite halides by design

Authors: Chang Won Ahn, Jae Hun Jo, Jong Chan Kim, Hamid Ullah, Sangkyun Ryu, Younghun Hwang, Jin San Choi, Jongmin Lee, Sanghan Lee, Hyoungjeen Jeen, Young-Han Shin, Hu Young Jeong, Ill Won Kim, Tae Heon Kim

Abstract: Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to no… ▽ More Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to novel optoelectronic devices. Here, we realized highly crystalline Cs2AgBiBr6 single crystals with a well-defined atomic ordering on the microscopic scale. We avoided the formation of Ag vacancies and the subsequent secondary Cs3Bi2Br9 by manipulating the initial chemical environments in hydrothermal synthesis. The suppression of Ag vacancies allows us to reduce the trap density in the as-grown crystals and to enhance the carrier mobility further. Our design strategy is applicable for fabricating other lead-free halide materials with high crystallinity. △ Less

Submitted 29 June, 2020; originally announced June 2020.

Stabilization of competing ferroelectric phases of HfO$_2$ under epitaxial strain

Authors: Yubo Qi, Sobhit Singh, Claudia Lau, Fei-Ting Huang, Xianghan Xu, Frederick J. Walker, Charles H. Ahn, Sang-Wook Cheong, Karin M. Rabe

Abstract: Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO$_2$ have attracted intensive research interest in recent years… ▽ More Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO$_2$ have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO$_2$ are used to discover that imposing an in-plane shear strain on the tetragonal phase induces a nonpolar to polar phase transition. This in-plane shear-induced polar phase is shown to be an epitaxial distortion of a known metastable ferroelectric $Pnm2_1$ phase of HfO$_2$. It is proposed that this ferroelectric $Pnm2_1$ phase can account for the recently observed ferroelectricity in the (111)-oriented HfO$_2$-based thin film [Nature Materials 17, 1095-1100 (2018)]. Further investigation of this second functional ferroelectric phase in HfO$_2$ could potentially improve the performances of HfO$_2$-based films in logic and memory devices. △ Less

Submitted 26 September, 2020; v1 submitted 23 January, 2020; originally announced January 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 125, 257603 (2020)

Control of hidden ground-state order in NdNiO$_3$ superlattices

Authors: Ankit S. Disa, Alexandru B. Georgescu, James L. Hart, Divine P. Kumah, Padraic Shafer, Elke Arenholz, Dario A. Arena, Sohrab Ismail-Beigi, Mitra L. Taheri, Frederick J. Walker, Charles H. Ahn

Abstract: The combination of charge and spin degrees of freedom with electronic correlations in condensed matter systems leads to a rich array of phenomena, such as magnetism, superconductivity, and novel conduction mechanisms. While such phenomena are observed in bulk materials, a richer array of behaviors becomes possible when these degrees of freedom are controlled in atomically layered heterostructures,… ▽ More The combination of charge and spin degrees of freedom with electronic correlations in condensed matter systems leads to a rich array of phenomena, such as magnetism, superconductivity, and novel conduction mechanisms. While such phenomena are observed in bulk materials, a richer array of behaviors becomes possible when these degrees of freedom are controlled in atomically layered heterostructures, where one can constrain dimensionality and impose interfacial boundary conditions. Here, we unlock a host of unique, hidden electronic and magnetic phase transitions in NdNiO$_3$ while approaching the two-dimensional (2D) limit, resulting from the differing influences of dimensional confinement and interfacial coupling. Most notably, we discover a new phase in fully 2D, single layer NdNiO$_3$, in which all signatures of the bulk magnetic and charge ordering are found to vanish. In addition, for quasi two-dimensional layers down to a thickness of two unit cells, bulk-type ordering persists but separates from the onset of insulating behavior in a manner distinct from that found in the bulk or thin film nickelates. Using resonant x-ray spectroscopies, first-principles theory, and model calculations, we propose that the single layer phase suppression results from a new mechanism of interfacial electronic reconstruction based on ionicity differences across the interface, while the phase separation in multi-layer NdNiO$_3$ emerges due to enhanced 2D fluctuations. These findings provide insights into the intertwined mechanisms of charge and spin ordering in strongly correlated systems in reduced dimensions and illustrate the ability to use atomic layering to access hidden phases. △ Less

Submitted 20 September, 2018; originally announced September 2018.

Comments: 30 pages, 13 figures

Journal ref: Phys. Rev. Materials 1, 024410 (2017)

Suppression of the Spectral Weight of Topological Surface States on the Nanoscale via Local Symmetry Breaking

Authors: Omur E. Dagdeviren, Subhasish Mandal, Ke Zou, Chao Zhou, Georg H. Simon, Frederick J. Walker, Charles H. Ahn, Udo D. Schwarz, Sohrab Ismail-Beigi, Eric I. Altman

Abstract: In topological crystalline insulators the topological conducting surface states are protected by crystal symmetry, in principle making it possible to pattern nanoscale insulating and conductive motifs solely by breaking local symmetries on an otherwise homogenous, single-phase material. We show using scanning tunneling microscopy/spectroscopy that defects that break local symmetry of SnTe suppress… ▽ More In topological crystalline insulators the topological conducting surface states are protected by crystal symmetry, in principle making it possible to pattern nanoscale insulating and conductive motifs solely by breaking local symmetries on an otherwise homogenous, single-phase material. We show using scanning tunneling microscopy/spectroscopy that defects that break local symmetry of SnTe suppress electron tunneling over an energy range as large as the bulk band gap, an order of magnitude larger than that produced globally via magnetic fields or uniform structural perturbations. Complementary ab initio calculations show how local symmetry breaking obstructs topological surface states as shown by a threefold reduction of the spectral weight of the topological surface states. The finding highlights the potential benefits of manipulating the surface morphology to create devices that take advantage of the unique properties of topological surface states and can operate at practical temperatures. △ Less

Submitted 30 November, 2018; v1 submitted 1 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. Materials 2, 114205 (2018)

Structural Distortions At Polar Manganite Interfaces

Authors: S. Koohfar, A. S. Disa, M. Marshall, F. J. Walker, C. H. Ahn, D. P. Kumah

Abstract: Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these interactions may be enhanced by combining oxides where the polarity changes at the interface. The physical structure between non-polar SrTiO$_3$ and polar La… ▽ More Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these interactions may be enhanced by combining oxides where the polarity changes at the interface. The physical structure between non-polar SrTiO$_3$ and polar La$_{1-x}$Sr$_x$MnO$_3$(x=0.2) is investigated using high resolution synchrotron x-ray diffraction to directly determine the role of structure in compensating the polar discontinuity. At both the oxide-oxide interface and vacuum-oxide interfaces, the lattice is found to expand and rumple along the growth direction. The SrTiO$_3$/La$_{1-x}$Sr$_x$MnO$_3$ interface also exhibits intermixing of La and Sr over a few unit cells. The results, hence, demonstrate that polar distortions and ionic intermixing coexist and both pathways play a significant role at interfaces with polar discontinuities. △ Less

Submitted 4 May, 2017; v1 submitted 17 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 024108 (2017)

Experimental verification of orbital engineering at the atomic scale: charge transfer and symmetry breaking in nickelate heterostructures

Authors: Patrick J. Phillips, Paolo Longo, Alexandru B. Georgescu, Eiji Okunishi, Xue Rui, Ankit S. Disa, Fred Walker, Sohrab Ismail-Beigi, Charles H. Ahn, Robert F. Klie

Abstract: Epitaxial strain, layer confinement and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties in complex metal oxides. Nickelate heterostructures, based on RENiO$_3$, where RE is a trivalent rare-earth cation, have been shown to be relevant model systems since the orbital occupancy, degeneracy, and, consequently, the el… ▽ More Epitaxial strain, layer confinement and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties in complex metal oxides. Nickelate heterostructures, based on RENiO$_3$, where RE is a trivalent rare-earth cation, have been shown to be relevant model systems since the orbital occupancy, degeneracy, and, consequently, the electronic/magnetic properties can be altered as a function of epitaxial strain, layer thickness and superlattice structure. One such recent example is the tri-component LaTiO$_3$-LaNiO$_3$-LaAlO$_3$ superlattice, which exhibits charge transfer and orbital polarization as the result of its interfacial dipole electric field. A crucial step towards control of these parameters for future electronic and magnetic device applications is to develop an understanding of both the magnitude and range of the octahedral network's response towards interfacial strain and electric fields. An approach that provides atomic-scale resolution and sensitivity towards the local octahedral distortions and orbital occupancy is therefore required. Here, we employ atomic-resolution imaging coupled with electron spectroscopies and first principles theory to examine the role of interfacial charge transfer and symmetry breaking in a tricomponent nickelate superlattice system. We find that nearly complete charge transfer occurs between the LaTiO$_3$ and LaNiO$_3$ layers, resulting in a Ni$^{2+}$ valence state. We further demonstrate that this charge transfer is highly localized with a range of about 1 unit cell, within the LaNiO$_3$ layers. The results presented here provide important feedback to synthesis efforts aimed at stabilizing new electronic phases that are not accessible by conventional bulk or epitaxial film approaches. △ Less

Submitted 16 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 95, 205131 (2017)

The role of double TiO2 layers at the interface of FeSe/SrTiO3 superconductors

Authors: Ke Zou, Subhasish Mandal, Stephen Albright, Rui Peng, Yujia Pu, Divine Kumah, Claudia Lau, Georg Simon, Omur E. Dagdeviren, Xi He, Ivan Bozovic, Udo D. Schwarz, Eric I. Altman, Donglai Feng, Fred J. Walker, Sohrab Ismail-Beigi, Charles H. Ahn

Abstract: We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab in… ▽ More We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab initio calculations reveal a strong tendency for electrons to transfer from an oxygen deficient SrTiO3 surface to FeSe when the double TiO2 layer is present. As a better electron donor than previously proposed interfacial structures, the double layer helps to remove the hole pocket in the FeSe at the Γ point of the Brillouin zone and leads to a band structure characteristic of superconducting samples. The characterization of the interface structure presented here is a key step towards the resolution of many open questions about this novel superconductor. △ Less

Submitted 4 May, 2016; originally announced May 2016.

Comments: Physical Review B: Rapid Communications in Press

Journal ref: Phys. Rev. B 93, 180506(R) 2016

Orbital engineering in nickelate heterostructures driven by anisotropic oxygen hybridization rather than orbital energy levels

Authors: G. Fabbris, D. Meyers, J. Okamoto, J. Pelliciari, A. S. Disa, Y. Huang, Z. -Y. Chen, W. B. Wu, C. T. Chen, S. Ismail-Beigi, C. H. Ahn, F. J. Walker, D. J. Huang, T. Schmitt, M. P. M. Dean

Abstract: Resonant inelastic x-ray scattering is used to investigate the electronic origin of orbital polarization in nickelate heterostructures taking $\mathrm{LaTiO_3-LaNiO_3-3x(LaAlO_3)}$, a system with exceptionally large polarization, as a model system. We find that heterostructuring generates only minor changes in the Ni $3d$ orbital energy levels, contradicting the often-invoked picture in which chan… ▽ More Resonant inelastic x-ray scattering is used to investigate the electronic origin of orbital polarization in nickelate heterostructures taking $\mathrm{LaTiO_3-LaNiO_3-3x(LaAlO_3)}$, a system with exceptionally large polarization, as a model system. We find that heterostructuring generates only minor changes in the Ni $3d$ orbital energy levels, contradicting the often-invoked picture in which changes in orbital energy levels generate orbital polarization. Instead, O $K$-edge x-ray absorption spectroscopy demonstrates that orbital polarization is caused by an anisotropic reconstruction of the oxygen ligand hole states. This provides an explanation for the limited success of theoretical predictions based on tuning orbital energy levels and implies that future theories should focus on anisotropic hybridization as the most effective means to drive large changes in electronic structure and realize novel emergent phenomena. △ Less

Submitted 8 September, 2016; v1 submitted 29 March, 2016; originally announced March 2016.

Comments: Accepted for publication in Physical Review Letters. 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 117, 147401 (2016)

Quantum interference effects in chemical vapor deposited graphene

Authors: Nam-Hee Kim, Yun-Sok Shin, Serin Park, Hong-Seok Kim, Jun Sung Lee, Chi Won Ahn, Jeong-O Lee, Yong-Joo Doh

Abstract: We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the micropo… ▽ More We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices. △ Less

Submitted 31 October, 2015; originally announced November 2015.

Comments: Current Applied Physics, vol.16 pg.31 (2016)

Quantum electrical transport properties of topological insulator Bi2Te3 nanowires

Authors: Hong-Seok Kim, Ho Sun Shin, Joon Sung Lee, Chi Won Ahn, Jae Yong Song, Yong-Joo Doh

Abstract: We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibi… ▽ More We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibits exponential temperature dependence, suggesting that the phase coherence length L_phi is inversely proportional to the temperature, as in quasi-ballistic systems. In addition, a weak antilocalization analysis on the surface channel by using a one-dimensional localization theory, enabled by successful extraction of the surface contribution from the magnetoconductance data, is provided in support of the temperature dependence of L_phi. △ Less

Submitted 31 October, 2015; originally announced November 2015.

Journal ref: Current Applied Physics, vol.16 pg.51 (2016)

Oxide 2D electron gases as a route for high carrier densities on (001) Si

Authors: Lior Kornblum, Eric N. Jin, Divine P. Kumah, Alexis T. Ernst, Christine C. Broadbridge, Charles H. Ahn, Fred J. Walker

Abstract: Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing… ▽ More Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing $GdTiO_3-SrTiO_3$ on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, with $\sim 9\times 10^{13} \; cm^{-2}$ electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system. △ Less

Submitted 11 May, 2015; originally announced May 2015.

Comments: 10 pages, 4 figures

Bethe states for the two-site Bose-Hubbard model: a binomial approach

Authors: Gilberto Santos, Changrim Ahn, Angela Foerster, Itzhak Roditi

Abstract: We calculate explicitly the Bethe vectors states by the algebraic Bethe ansatz method with the $gl(2)$-invariant $R$-matrix for the two-site Bose-Hubbard model. Using a binomial expansion of the n-th power of a sum of two operators we get and solve a recursion equation. We calculate the scalar product and the norm of the Bethe vectors states. The form factors of the imbalance current operator are… ▽ More We calculate explicitly the Bethe vectors states by the algebraic Bethe ansatz method with the $gl(2)$-invariant $R$-matrix for the two-site Bose-Hubbard model. Using a binomial expansion of the n-th power of a sum of two operators we get and solve a recursion equation. We calculate the scalar product and the norm of the Bethe vectors states. The form factors of the imbalance current operator are also computed. △ Less

Submitted 19 May, 2015; v1 submitted 26 March, 2015; originally announced March 2015.

Comments: 13 pages

Journal ref: Phys. Lett. B 746 (2015) 186-189

Selective metal deposition at graphene line defects by atomic layer deposition

Authors: Kwanpyo Kim, Han-Bo-Ram Lee, Richard W. Johnson, Jukka T. Tanskanen, Nan Liu, Myung-Gil Kim, Changhyun Pang, Chiyui Ahn, Stacey F. Bent, Zhenan Bao

Abstract: One-dimensional defects in graphene have strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's… ▽ More One-dimensional defects in graphene have strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene's grain boundaries, folds, and cracks due to the enhanced chemical reactivity of these line defects, which is directly confirmed by transmission electron microscopy imaging. The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications. Using Pt-graphene hybrid structures, we demonstrate high-performance hydrogen gas sensors at room temperatures and show its advantages over other evaporative Pt deposition methods, in which Pt decorates graphene surface non-selectively. △ Less

Submitted 20 October, 2014; originally announced October 2014.

Comments: 27 pages, 6 main figures

Journal ref: Nature Communications 5, 4781 (2014)

Reversible modulation of orbital occupations via an interface-induced state in metallic manganites

Authors: Hanghui Chen, Qiao Qiao, Matthew S. J. Marshall, Alexandru B. Georgescu, Ahmet Gulec, Patrick J. Phillips, Robert F. Klie, Frederick J. Walker, Charles H. Ahn, Sohrab Ismail-Beigi

Abstract: The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroele… ▽ More The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics. △ Less

Submitted 12 September, 2014; originally announced September 2014.

Comments: This version is to replace the old submission arXiv:1309.2976 (withdrawn). We have made substantial revision and improvement in the new version

Journal ref: Nano Lett. 14, 4965 (2014)

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

Authors: Jie Shen, Yeonwoong Jung, Ankit S. Disa, Fred J. Walker, Charles H. Ahn, Judy J. Cha

Abstract: SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morpholog… ▽ More SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morphology of SnTe such that only desired crystallographic surfaces are present. Here, we grow SnTe nanostructures using vapor-liquid-solid and vapor-solid growth mechanisms. Previously, SnTe nanowires and nanocrystals have been grown.1-4 In this report, we demonstrate synthesis of SnTe nanoplates with lateral dimensions spanning tens of microns and thicknesses of a hundred nanometers. The top and bottom surfaces are either (100) or (111), maximizing topological surface states on these surfaces. Magnetotransport on these SnTe nanoplates shows high bulk carrier density, consistent with bulk SnTe crystals arising due to defects such as Sn vacancies. In addition, we observe a structural phase transition in these nanoplates from the high temperature rock salt to low temperature rhombohedral structure. For nanoplates with very high carrier density, we observe a slight upturn in resistance at low temperatures, indicating electron-electron interactions. △ Less

Submitted 19 June, 2014; originally announced June 2014.

Comments: Nano Lett., Article ASAP,2014

Journal ref: Nano letters 14 (7), 4183-4188, 2014

Active silicon integrated nanophotonics: ferroelectric BaTiO3 devices

Authors: Chi Xiong, Wolfram H. P. Pernice, Joseph H. Ngai, James W. Reiner, Divine Kumah, Frederick J. Walker, Charles H. Ahn, Hong X. Tang

Abstract: The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric Ba… ▽ More The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric BaTiO3 thin films on the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline BaTiO3 directly on SOI and engineer integrated waveguide structures that simultaneously confine light and an RF electric field in the BaTiO3 layer. Using on-chip photonic interferometers, we extract a large effective Pockels coefficient of 213 plus minus 49 pm/V, a value more than six times larger than found in commercial optical modulators based on lithium niobate. The monolithically integrated BaTiO3 optical modulators show modulation bandwidth in the gigahertz regime, which is promising for broadband applications. △ Less

Submitted 4 February, 2014; v1 submitted 16 January, 2014; originally announced January 2014.

Journal ref: Nano Lett., 2014, 14 (3), pp 1419-1425

Hysteretic electrical transport in BaTiO$_3$/Ba$_{1-x}$Sr$_x$TiO$_3$/Ge heterostructures

Authors: J. H. Ngai, D. P. Kumah, C. H. Ahn, F. J. Walker

Abstract: We present electrical transport measurements of heterostructures comprised of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO$_3$, which enables the thermal expansion mismatch between BaTiO$_3$ and Ge to be overcome to achieve $c$-axis oriented growth. The conduction bands of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ are nearly ali… ▽ More We present electrical transport measurements of heterostructures comprised of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO$_3$, which enables the thermal expansion mismatch between BaTiO$_3$ and Ge to be overcome to achieve $c$-axis oriented growth. The conduction bands of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching. △ Less

Submitted 13 November, 2013; originally announced November 2013.

Dynamical control of orbital occupations via a ferroelectric-induced polar state in metallic manganites

Authors: Hanghui Chen, Qiao Qiao, Matthew S. J. Marshall, Alexandru B. Georgescu, Ahmet Gulec, Patrick J. Phillips, Robert F. Klie, Frederick J. Walker, Charles H. Ahn, Sohrab Ismail-Beigi

Abstract: The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we show how to dynamically modulate the orbital populations on Mn atoms at ferroelectric/manganite interfaces by switching the ferroelectric polarization. The change in orbital occu… ▽ More The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we show how to dynamically modulate the orbital populations on Mn atoms at ferroelectric/manganite interfaces by switching the ferroelectric polarization. The change in orbital occupation can be as large as 10\%, greatly exceeding that of bulk manganites. This flippable orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use {\it ab initio} theory, epitaxial thin film growth, and scanning transmission electron microscopy to verify the predicted interfacial polar state and concomitant orbital splittings. △ Less

Submitted 14 September, 2014; v1 submitted 11 September, 2013; originally announced September 2013.

Comments: This paper has been withdrawn by the authors. A new version arXiv:1409.3672 replaces this old version

Modifying the Electronic Orbitals of Nickelate Heterostructures Via Structural Distortions

Authors: Hanghui Chen, Divine P. Kumah, Ankit S. Disa, Frederick J. Walker, Charles H. Ahn, Sohrab Ismail-Beigi

Abstract: We describe a general materials design approach that produces large orbital energy splittings (orbital polarization) in nickelate heterostructures, creating a two-dimensional single-band electronic surface at the Fermi energy. The resulting electronic structure mimics that of the high temperature cuprate superconductors. The two key ingredients are: (i) the construction of atomic-scale distortions… ▽ More We describe a general materials design approach that produces large orbital energy splittings (orbital polarization) in nickelate heterostructures, creating a two-dimensional single-band electronic surface at the Fermi energy. The resulting electronic structure mimics that of the high temperature cuprate superconductors. The two key ingredients are: (i) the construction of atomic-scale distortions about the Ni site via charge transfer and internal electric fields, and (ii) the use of three component (tri-component) superlattices to break inversion symmetry. We use {\it ab initio} calculations to implement the approach, with experimental verification of the critical structural motif that enables the design to succeed. △ Less

Submitted 11 September, 2013; originally announced September 2013.

Comments: 12 pages, 3 figures and 1 table

Journal ref: Phys. Rev. Lett. 110, 186402 (2013)

Angular dependence of the Hall effect of lsmo films

Authors: Netanel Naftalis, Noam Haham, Jason Hoffman, Matthew S. J. Marshall, C. H. Ahn, Lior Klein

Abstract: We find that the Hall effect resistivity ($ρ_{xy}$) of thin films of \lsmo\ varies as a function of the angle $θ$ between the applied magnetic field and the film normal as $ρ_{xy}=a\cos θ+ b\cos 3θ$, where $|b|$ increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully e… ▽ More We find that the Hall effect resistivity ($ρ_{xy}$) of thin films of \lsmo\ varies as a function of the angle $θ$ between the applied magnetic field and the film normal as $ρ_{xy}=a\cos θ+ b\cos 3θ$, where $|b|$ increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term $b$, suggesting it is a manifestation of an intrinsic transport property. △ Less

Submitted 6 November, 2012; originally announced November 2012.

Journal ref: Phys. Rev. B 86, 184402 (2012)

Extended point defects in crystalline materials: Ge and Si

Authors: Nick E. B. Cowern, Sergei Simdyankin, Chihak Ahn, Nick S. Bennett, Jonathan P. Goss, Jean-Michel Hartmann, Ardechir Pakfar, Silke Hamm, Jérôme Valentin, Enrico Napolitani, Davide De Salvador, Elena Bruno, Salvatore Mirabella

Abstract: B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Com… ▽ More B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Computational modelling suggests that morphs exist in both self-interstitial and vacancy-like forms, and are crucial for diffusion and defect dynamics in Ge, Si and probably many other crystalline solids. △ Less

Submitted 12 March, 2013; v1 submitted 10 October, 2012; originally announced October 2012.

Thermal quench effects on ferroelectric domain walls

Authors: Patrycja Paruch, Alejandro B. Kolton, Xia Hong, Charles H. Ahn, Thierry Giamarchi

Abstract: Using piezoresponse force microscopy on epitaxial ferroelectric thin films, we have measured the evolution of domain wall roughening as a result of heat-quench cycles up to 735C, with the effective roughness exponent ζ changing from 0.25 to 0.5. We discuss two possible mechanisms for the observed ζ increase: a quench from a thermal 1-dimensional configuration, and from a locally-equilibrated pinne… ▽ More Using piezoresponse force microscopy on epitaxial ferroelectric thin films, we have measured the evolution of domain wall roughening as a result of heat-quench cycles up to 735C, with the effective roughness exponent ζ changing from 0.25 to 0.5. We discuss two possible mechanisms for the observed ζ increase: a quench from a thermal 1-dimensional configuration, and from a locally-equilibrated pinned configuration with a crossover from a 2- to 1-dimensional regime. We find that the post-quench spatial structure of the metastable states, qualitatively consistent with the existence of a growing dynamical length scale whose ultra slow evolution is primarily controlled by the defect configuration and heating process parameters, makes the second scenario more plausible. This interpretation suggests that pinning is relevant in a wide range of temperatures, and in particular, that purely thermal domain wall configurations might not be observable in this glassy system. We also demonstrate the crucial effects of oxygen vacancies in stabilizing domain structures. △ Less

Submitted 17 May, 2012; originally announced May 2012.

Comments: 17 pages (preprint), 4 figures

Journal ref: Phys. Rev. B 85, 214115 (2012)

Integrating Functional Oxides with Graphene

Authors: X. Hong, K. Zou, A. M. DaSilva, C. H. Ahn, J. Zhu

Abstract: Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding th… ▽ More Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding the transport properties of graphene interfaced with ferroelectric Pb(Zr,Ti)O_3 (PZT) and high-k HfO_2. Graphene field effect devices prepared on high-quality single crystal PZT substrates exhibit up to tenfold increases in mobility compared to SiO_2-gated devices. An unusual and robust resistance hysteresis is observed in these samples, which is attributed to the complex surface chemistry of the ferroelectric. Surface polar optical phonons of oxides in graphene transistors play an important role in the device performance. We review their effects on mobility and the high source-drain bias saturation current of graphene, which are crucial for developing graphene-based room temperature high-speed amplifiers. Oxides also introduce scattering sources that limit the low temperature electron mobility in graphene. We present a comprehensive study of the transport and quantum scattering times to differentiate various scattering scenarios and quantitatively evaluate the density and distribution of charged impurities and the effect of dielectric screening. Our results can facilitate the design of multifunctional nano-devices utilizing graphene-oxide hybrid structures. △ Less

Submitted 23 April, 2012; originally announced April 2012.

Comments: 20 pages, 8 figures, to appear in Solid State Commun. Special Issue on Graphene

Journal ref: Solid State Communications 152, 1365 (2012)

Scanning SQUID Susceptometry of a paramagnetic superconductor

Authors: J. R. Kirtley, B. Kalisky, J. A. Bert, C. Bell, Y. Hikita, H. Y. Hwang, J. H. Ngai, Y. Segal, F. J. Walker, C. H. Ahn, K. A. Moler

Abstract: Scanning SQUID susceptometry images the local magnetization and susceptibility of a sample. By accurately modeling the SQUID signal we can determine the physical properties such as the penetration depth and permeability of superconducting samples. We calculate the scanning SQUID susceptometry signal for a superconducting slab of arbitrary thickness with isotropic London penetration depth, on a non… ▽ More Scanning SQUID susceptometry images the local magnetization and susceptibility of a sample. By accurately modeling the SQUID signal we can determine the physical properties such as the penetration depth and permeability of superconducting samples. We calculate the scanning SQUID susceptometry signal for a superconducting slab of arbitrary thickness with isotropic London penetration depth, on a non-superconducting substrate, where both slab and substrate can have a paramagnetic response that is linear in the applied field. We derive analytical approximations to our general expression in a number of limits. Using our results, we fit experimental susceptibility data as a function of the sample-sensor spacing for three samples: 1) delta-doped SrTiO3, which has a predominantly diamagnetic response, 2) a thin film of LaNiO3, which has a predominantly paramagnetic response, and 3) a two-dimensional electron layer (2-DEL) at a SrTiO3/AlAlO3 interface, which exhibits both types of response. These formulas will allow the determination of the concentrations of paramagnetic spins and superconducting carriers from fits to scanning SQUID susceptibility measurements. △ Less

Submitted 15 April, 2012; originally announced April 2012.

Comments: 11 pages, 13 figures

Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films

Authors: N. Naftalis, A. Kaplan, M. Schultz, C. A. F. Vaz, J. A. Moyer, C. H. Ahn, L. Klein

Abstract: A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the s… ▽ More A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the system. We also show that the AMR exhibit sign reversal as a function of temperature, and that it shows significant field dependence without saturation up to 9 T. Our results provide a unified description of the anisotropic magnetoresistance effects in epitaxial magnetite films and illustrate the need for a full determination of the resistivity tensor in crystalline systems. △ Less

Submitted 27 September, 2011; originally announced September 2011.

Resonant phonon coupling across the La{1-x}Sr{x}MnO{3}/SrTiO{3} interface

Authors: Y. Segal, K. F. Garrity, C. A. F. Vaz, J. D. Hoffman, F. J. Walker, S. Ismail-Beigi, C. H. Ahn

Abstract: The transport and magnetic properties of correlated La{0.53}Sr{0.47}MnO{3} ultrathin films, grown epitaxially on SrTiO{3}, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and theory we show that the cusp is a result of resonant coupling between the charge carriers in the film and a soft phonon mode in the SrTiO{3}, mediated through oxy… ▽ More The transport and magnetic properties of correlated La{0.53}Sr{0.47}MnO{3} ultrathin films, grown epitaxially on SrTiO{3}, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and theory we show that the cusp is a result of resonant coupling between the charge carriers in the film and a soft phonon mode in the SrTiO{3}, mediated through oxygen octahedra in the film. The amplitude of the mode diverges towards the transition temperature, and phonons are launched into the first few atomic layers of the film affecting its electronic state. △ Less

Submitted 27 February, 2011; v1 submitted 20 February, 2011; originally announced February 2011.

Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3

Authors: X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

Abstract: We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is… ▽ More We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 hours at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices. △ Less

Submitted 7 July, 2010; originally announced July 2010.

Comments: 8 pages, 3 figures, supplementary material included

Journal ref: Appl. Phys. Lett. 97, 033114 (2010)

Origin of the magnetoelectric coupling effect in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures

Authors: C. A. F. Vaz, J. Hoffman, Y. Segal, J. W. Reiner, R. D. Grober, Z. Zhang, C. H. Ahn, F. J. Walker

Abstract: The electronic valence state of Mn in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures is probed by near edge x-ray absorption spectroscopy as a function of the ferroelectric polarization. We observe a temperature independent shift in the absorption edge of Mn associated with a change in valency induced by charge carrier modulation in the La0.8Sr0.2MnO3, demonstrating the electronic o… ▽ More The electronic valence state of Mn in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures is probed by near edge x-ray absorption spectroscopy as a function of the ferroelectric polarization. We observe a temperature independent shift in the absorption edge of Mn associated with a change in valency induced by charge carrier modulation in the La0.8Sr0.2MnO3, demonstrating the electronic origin of the magnetoelectric effect. Spectroscopic, magnetic, and electric characterization shows that the large magnetoelectric response originates from a modified interfacial spin configuration, opening a new pathway to the electronic control of spin in complex oxide materials. △ Less

Submitted 8 March, 2010; originally announced March 2010.

Comments: 5 pages, 3 figures. Accepted for publication in Physical Review Letters.

Journal ref: Physical Review Letters 104:127202, 2010.

Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3

Authors: J. H. Ngai, Y. Segal, F. J. Walker, S. Ismail-Beigi, K. Le Hur, C. H. Ahn

Abstract: We present low temperature magnetoresistance measurements of Ar-irradiated SrTiO3 under an applied electrostatic field. The electric field, applied through a back gate bias, modulates both the mobility and sheet density, with a greater effect on the former. For high mobilities, 3-dimensional orbital magnetoresistance is observed. For low mobilities, negative magnetoresistance that is consistent… ▽ More We present low temperature magnetoresistance measurements of Ar-irradiated SrTiO3 under an applied electrostatic field. The electric field, applied through a back gate bias, modulates both the mobility and sheet density, with a greater effect on the former. For high mobilities, 3-dimensional orbital magnetoresistance is observed. For low mobilities, negative magnetoresistance that is consistent with the suppression of 2-dimensional weak-localization is observed. The crossover from 3 to 2-dimensional transport arises from a modulation in the carrier confinement, which is enhanced by the electric field dependent dielectric constant of SrTiO3. The implications of our results on the development of oxide electronic devices will be discussed. △ Less

Submitted 15 September, 2009; originally announced September 2009.

Comments: 4 pages, 5 figures

Growth and characterization of thin epitaxial Co3O4(111) films

Authors: C. A. F. Vaz, V. E. Henrich, C. H. Ahn, E. I. Altman

Abstract: The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystalline a-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation Co3O4(111)[-12-1]||a-Al2O3(0001)[10-10], as determined from in situ electron diffraction. Film stoichiometry is confirmed by x-ray photoelectron spectroscopy, while… ▽ More The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystalline a-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation Co3O4(111)[-12-1]||a-Al2O3(0001)[10-10], as determined from in situ electron diffraction. Film stoichiometry is confirmed by x-ray photoelectron spectroscopy, while ex situ x-ray diffraction measurements show that the Co3O4 films are fully relaxed. Post-growth annealing induces significant modifications in the film morphology, including a sharper Co3O4/a-Al2O3 interface and improved surface crystallinity, as shown by x-ray reflectometry, atomic force microscopy and electron diffraction measurements. Despite being polar, the surface of both as-grown and annealed Co3O4(111) films are (1 * 1), which can be explained in terms of inversion in the surface spinel structure. △ Less

Submitted 7 March, 2009; originally announced March 2009.

Comments: 8 pages, 7 figures

Journal ref: Journal of Crystal Growth 311:2648, 2009.

Magnetic anisotropy modulation of magnetite in Fe3O4/BaTiO3(100) epitaxial structures

Authors: C. A. F. Vaz, J. Hoffman, A. -B. Posadas, C. H. Ahn

Abstract: Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuities, that are due to changes in the magnetic anisotropy induced by strain in the different crystal phases of BaTiO3. The magnetite film is under tensile strain at room temperature, which is ascribed to the lattice expan… ▽ More Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuities, that are due to changes in the magnetic anisotropy induced by strain in the different crystal phases of BaTiO3. The magnetite film is under tensile strain at room temperature, which is ascribed to the lattice expansion of BaTiO3 at the cubic to tetragonal transition, indicating that the magnetite film is relaxed at the growth temperature. From the magnetization versus temperature curves, the variation in the magnetic anisotropy is determined and compared with the magnetoelastic anisotropies. These results demonstrate the possibility of using the piezoelectric response of BaTiO3 to modulate the magnetic anisotropy of magnetite films. △ Less

Submitted 20 December, 2008; originally announced December 2008.

Comments: 4 pages, 4 figures

Journal ref: Applied Physics Letters 94:022504, 2009.

Interface and electronic characterization of thin epitaxial Co3O4 films

Authors: C. A. F. Vaz, H. -Q. Wang, C. H. Ahn, V. E. Henrich, M. Z. Baykara, T. C. Schwendemann, N. Pilet, B. J. Albers, U. D. Schwarz, L. H. Zhang, Y. Zhu, J. Wang, E. I. Altman

Abstract: The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space techniques. As-grown film surfaces are found to be relatively disordered and exhibit an oblique low energy electron diffraction (LEED) pattern associated with th… ▽ More The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space techniques. As-grown film surfaces are found to be relatively disordered and exhibit an oblique low energy electron diffraction (LEED) pattern associated with the O-rich CoO2 bulk termination of the (110) surface. Interface and bulk film structure are found to improve significantly with post-growth annealing at 820 K in air and display sharp rectangular LEED patterns, suggesting a surface stoichiometry of the alternative Co2O2 bulk termination of the (110) surface. Non-contact atomic force microscopy demonstrates the presence of wide terraces separated by atomic steps in the annealed films that are not present in the as-grown structures; the step height of ~ 2.7 A corresponds to two atomic layers and confirms a single termination for the annealed films, consistent with the LEED results. A model of the (1 * 1) surfaces that allows for compensation of the polar surfaces is presented. △ Less

Submitted 23 November, 2008; originally announced November 2008.

Comments: 8 pages, 7 figures

Journal ref: Surface Science 603:291, 2009.

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

Authors: X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

Abstract: Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5. rho(V_g) and R_H(V_g) fitting inside the band overlap regime. 6. The deformation potential of longitudinal acoustic (LA) phonons in graphene. 7. Resistivity… ▽ More Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5. rho(V_g) and R_H(V_g) fitting inside the band overlap regime. 6. The deformation potential of longitudinal acoustic (LA) phonons in graphene. 7. Resistivity and Hall measurements of a SiO_2-gated FLG. △ Less

Submitted 29 October, 2008; originally announced October 2008.

Comments: 8 pages, 5 figures. Supplementary material to arXiv:0810.4466

Journal ref: Phys. Rev. Lett. 102, 136808 (2009)

The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)

Authors: Y. Bason, J. Hoffman, C. H. Ahn, L. Klein

Abstract: We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to 4th order, which reflects the c… ▽ More We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to 4th order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the bi-axial magnetocrystalline anisotropy in our samples. △ Less

Submitted 26 October, 2008; originally announced October 2008.

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

Authors: X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

Abstract: The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, μreaches 7x10^4 cm^2/Vs at 300K for n = 2.4x10^12/cm^2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10^5 cm^2/Vs at low temper… ▽ More The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, μreaches 7x10^4 cm^2/Vs at 300K for n = 2.4x10^12/cm^2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10^5 cm^2/Vs at low temperature. The temperature-dependent resistivity ρ(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8+/-0.5 eV. △ Less

Submitted 24 October, 2008; originally announced October 2008.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 102, 136808 (2009)

Charge carrier induced lattice strain and stress effects on As activation in Si

Authors: C. Ahn, S. T. Dunham

Abstract: We studied lattice expansion coefficient due to As using density functional theory with particular attention to separating the impact of electrons and ions. Based on As deactivation mechanism under equilibrium conditions, the effect of stress on As activation is predicted. We find that biaxial stress results in minimal impact on As activation, which is consistent with experimental observations b… ▽ More We studied lattice expansion coefficient due to As using density functional theory with particular attention to separating the impact of electrons and ions. Based on As deactivation mechanism under equilibrium conditions, the effect of stress on As activation is predicted. We find that biaxial stress results in minimal impact on As activation, which is consistent with experimental observations by Sugii et al. [J. Appl. Phys. 96, 261 (2004)] and Bennett et al.[J. Vac. Sci. Tech. B 26, 391 (2008)]. △ Less

Submitted 28 April, 2008; v1 submitted 24 April, 2008; originally announced April 2008.

Monodomain to polydomain transition in ferroelectric PbTiO3 thin films with La0.67Sr0.3MnO3 electrodes

Authors: Celine Lichtensteiger, Matthew Dawber, Nicolas Stucki, Jean-Marc Triscone, Jason Hoffman, Jeng-Bang Yau, Charles H. Ahn, Laurent Despont, Philippe Aebi

Abstract: Finite size effects in ferroelectric thin films have been probed in a series of epitaxial perovskite c-axis oriented PbTiO3 films grown on thin La0.67Sr0.33MnO3 epitaxial electrodes. The film thickness ranges from 480 down to 28 A (7 unit cells). The evolution of the film tetragonality c/a, studied using high resolution x-ray diffraction measurements, shows first a decrease of c/a with decreasin… ▽ More Finite size effects in ferroelectric thin films have been probed in a series of epitaxial perovskite c-axis oriented PbTiO3 films grown on thin La0.67Sr0.33MnO3 epitaxial electrodes. The film thickness ranges from 480 down to 28 A (7 unit cells). The evolution of the film tetragonality c/a, studied using high resolution x-ray diffraction measurements, shows first a decrease of c/a with decreasing film thickness followed by a recovery of c/a at small thicknesses. This recovery is accompanied by a change from a monodomain to a polydomain configuration of the polarization, as directly demonstrated by piezoresponse atomic force microscopy measurements. △ Less

Submitted 15 November, 2006; originally announced November 2006.

Planar Hall Effect MRAM

Authors: Y. Bason, L. Klein, J. -B. Yau, X. Hong, J. Hoffman, C. H. Ahn

Abstract: We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film. We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film. △ Less

Submitted 31 August, 2005; originally announced August 2005.

Epitaxial Growth of Multiferroic YMnO3 on GaN

Authors: A. Posadas, J. -B. Yau, J. Han, C. H. Ahn, S. Gariglio, K. Johnston, J. B. Neaton, K. M. Rabe

Abstract: In this work, we report on the epitaxial growth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30 degree rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the b… ▽ More In this work, we report on the epitaxial growth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30 degree rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxial growth mechanisms of complex oxide-semiconductor systems. △ Less

Submitted 19 August, 2005; originally announced August 2005.

Comments: 12 pages, 3 figures

White Lines and 3d-Occupancy for the 3d Transition-Metal Oxides

Authors: J. Graetz, C. C. Ahn, H. Ouyang, P. Rez, B. Fultz

Abstract: Electron energy-loss spectrometry was employed to measure the white lines at the L23 absorption edges of the 3d transition-metal oxides and lithium transition-metal oxides. The white-line ratio (L3/L2) was found to increase between d^0 and d^5 and decrease between d^5 and d^10, consistent with previous results for the transition metals and their oxides. The intensities of the white lines, normal… ▽ More Electron energy-loss spectrometry was employed to measure the white lines at the L23 absorption edges of the 3d transition-metal oxides and lithium transition-metal oxides. The white-line ratio (L3/L2) was found to increase between d^0 and d^5 and decrease between d^5 and d^10, consistent with previous results for the transition metals and their oxides. The intensities of the white lines, normalized to the post-edge background, are linear for the 3d transition-metal oxides and lithium transition-metal oxides. An empirical correlation between normalized white-line intensity and 3d occupancy is established. It provides a method for measuring changes in the 3d-state occupancy. As an example, this empirical relationship is used to measure changes in the transition-metal valences of Li_{1-x}Ni_{0.8}Co_{0.2}O_2 in the range of 0 < x < 0.64. In these experiments the 3d occupancy of the nickel ion decreased upon lithium deintercalation, while the cobalt valence remained constant. △ Less

Submitted 23 June, 2004; originally announced June 2004.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B, 69 235103 (2004)