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Spin polarized STM imaging of nanoscale Néel skyrmions in an SrIrO3/SrRuO3 Perovskite Bilayer
Authors:
J. P. Corbett,
K. -Y. Meng,
J. J. Repicky,
J. Rowland,
A. S. Ahmed,
J. Guerrero-Sanchez,
F. Y. Yang,
J. A. Gupta
Abstract:
Spin-polarized scanning tunneling microscopy (SPSTM) was used to directly image nanoscale Néel skyrmions in a SrIrO3 / SrRuO3 bilayer system that are among the smallest reported to date in any system. Off-axis magnetron sputtering was used to cap epitaxial films of the oxide ferromagnet SRO with 2 unit cells of SrIrO3, intended to provide interfacial spin orbit coupling. Atomic resolution STM imag…
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Spin-polarized scanning tunneling microscopy (SPSTM) was used to directly image nanoscale Néel skyrmions in a SrIrO3 / SrRuO3 bilayer system that are among the smallest reported to date in any system. Off-axis magnetron sputtering was used to cap epitaxial films of the oxide ferromagnet SRO with 2 unit cells of SrIrO3, intended to provide interfacial spin orbit coupling. Atomic resolution STM imaging and tunneling spectroscopy were used to identify island-like SrIrO3 grains and small regions of bare SrRuO3. Isolated skyrmions were only observed in SrIrO3-covered regions of the film, and exhibited a distribution of sizes and shapes with an average diameter of 3 nm. We found that skyrmions must be fully contained within, but may be smaller than, any given SrIrO3 region. Additionally, skyrmions were observed on SrIrO3 islands of varying thickness without loss of SPSTM contrast, suggesting the magnetic texture lies within the SrIrO3 island rather than the underlying ferromagnetic SrRuO3. Density functional theory calculations suggest this could be due to a small induced magnetic moment associated with IrO layers in the SrIrO3 film.
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Submitted 12 July, 2020;
originally announced July 2020.
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Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers
Authors:
Yang Cheng,
Sisheng Yu,
Adam S. Ahmed,
Menglin Zhu,
Jinwoo Hwang,
Fengyuan Yang
Abstract:
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance (ADMR) measurements in Pt on antiferromagnetic (AF) $α$-Fe$_2$O$_3$(0001) epitaxial films at 10 K, which provide evidence for the MPE. The Néel order of $α$-Fe$_2$O…
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To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance (ADMR) measurements in Pt on antiferromagnetic (AF) $α$-Fe$_2$O$_3$(0001) epitaxial films at 10 K, which provide evidence for the MPE. The Néel order of $α$-Fe$_2$O$_3$ and the induced magnetization in Pt show a unique ADMR compared with all other FM and AF systems. A macrospin response model is established and can explain the AF spin configuration and all main ADMR features in the Pt/$α$-Fe$_2$O$_3$ bilayers.
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Submitted 9 August, 2022; v1 submitted 11 June, 2019;
originally announced June 2019.
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Spin-Hall Topological Hall Effect in Highly Tunable Pt/Ferrimagnetic-Insulator Bilayers
Authors:
Adam S. Ahmed,
Aidan J. Lee,
Nuria Bagués,
Brendan A. McCullian,
Ahmed M. A. Thabt,
Avery Perrine,
James R. Rowland,
Mohit Randeria,
P. Chris Hammel,
David W. McComb,
Fengyuan Yang
Abstract:
Electrical detection of topological magnetic textures such as skyrmions is currently limited to conducting materials. While magnetic insulators offer key advantages for skyrmion technologies with high speed and low loss, they have not yet been explored electrically. Here, we report a prominent topological Hall effect in Pt/Tm$_3$Fe$_5$O$_{12}$ bilayers, where the pristine Tm$_3$Fe$_5$O$_{12}$ epit…
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Electrical detection of topological magnetic textures such as skyrmions is currently limited to conducting materials. While magnetic insulators offer key advantages for skyrmion technologies with high speed and low loss, they have not yet been explored electrically. Here, we report a prominent topological Hall effect in Pt/Tm$_3$Fe$_5$O$_{12}$ bilayers, where the pristine Tm$_3$Fe$_5$O$_{12}$ epitaxial films down to 1.25 unit cell thickness allow for tuning of topological Hall stability over a broad range from 200 to 465 K through atomic-scale thickness control. Although Tm$_3$Fe$_5$O$_{12}$ is insulating, we demonstrate the detection of topological magnetic textures through a novel phenomenon: 'spin-Hall topological Hall effect' (SH-THE), where the interfacial spin-orbit torques allow spin-Hall-effect generated spins in Pt to experience the unique topology of the underlying skyrmions in Tm$_3$Fe$_5$O$_{12}$. This novel electrical detection phenomenon paves a new path for utilizing a large family of magnetic insulators in future skyrmion technologies.
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Submitted 9 May, 2019;
originally announced May 2019.
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Surface Structures of Epitaxial B20 FeGe(-1-1-1) Thin Films via Scanning Tunneling Microscopy
Authors:
J. P. Corbett,
T. Zhu,
A. S. Ahmed,
S. J. Tjung,
J. J. Repicky,
T. Takeuchi,
R. K. Kawakami,
J. A. Gupta
Abstract:
We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffra…
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We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer.
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Submitted 2 July, 2018;
originally announced July 2018.
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Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
Authors:
Dante J. O'Hara,
Tiancong Zhu,
Amanda H. Trout,
Adam S. Ahmed,
Yunqiu,
Luo,
Choong Hee Lee,
Mark R. Brenner,
Siddharth Rajan,
Jay A. Gupta,
David W. McComb,
Roland K. Kawakami
Abstract:
Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structu…
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Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe$_2$) monolayer, while for thicker films it could originate from a combination of vdW MnSe$_2$ and/or interfacial magnetism of $α$-MnSe(111). Magnetization measurements of monolayer MnSe$_x$ films on GaSe and SnSe$_2$ epilayers show ferromagnetic ordering with large saturation magnetization of ~ 4 Bohr magnetons per Mn, which is consistent with density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe$_2$. Growing MnSe$_x$ films on GaSe up to high thickness (~ 40 nm) produces $α$-MnSe(111), and an enhanced magnetic moment (~ 2x) compared to the monolayer MnSe$_x$ samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveal an abrupt and clean interface between GaSe(0001) and $α$-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe$_2$ monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.
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Submitted 22 February, 2018;
originally announced February 2018.
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Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers
Authors:
Walid Amamou,
Igor V. Pinchuk,
Amanda Hanks,
Robert Williams,
Nikolas Antolin,
Adam Goad,
Dante J. O'Hara,
Adam S. Ahmed,
Wolfgang Windl,
David W. McComb,
Roland K. Kawakami
Abstract:
We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt v…
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We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt via AMR is further supported by density functional theory calculations and various control measurements including insertion of a Cu spacer layer to suppress the induced ferromagnetism. In addition, anomalous Hall effect measurements show an out-of-plane magnetic hysteresis loop of the induced ferromagnetic phase with larger coercivity and larger remanence than the bulk CoFe2O4. By demonstrating MPE in Pt/CoFe2O4, these results establish the spinel ferrite family as a promising material for MPE and spin manipulation via proximity exchange fields.
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Submitted 26 June, 2017;
originally announced June 2017.
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Chiral Bobbers and Skyrmions in Epitaxial FeGe/Si(111) Films
Authors:
Adam S. Ahmed,
James Rowland,
Bryan D. Esser,
Sarah Dunsiger,
David W. McComb,
Mohit Randeria,
Roland K. Kawakami
Abstract:
We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin film samples through Lorentz transmission electron microscopy and topological Hall effect, we perform magnetization measurements that reveal an inverse r…
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We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin film samples through Lorentz transmission electron microscopy and topological Hall effect, we perform magnetization measurements that reveal an inverse relationship between film thickness and the slope of the susceptibility (d\c{hi}/dH). We present evidence for the evolution as a function of film thickness, L, from a skyrmion phase for L < LD/2 to a cone phase with chiral bobbers at the interface for L > LD/2, where LD ~ 70 nm is the FeGe pitch length. We show using micromagnetic simulations that chiral bobbers, earlier predicted to be metastable, are in fact the stable ground state in the presence of an additional interfacial Rashba Dzyaloshinskii-Moriya interaction (DMI).
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Submitted 14 April, 2018; v1 submitted 26 June, 2017;
originally announced June 2017.
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Molecular Beam Epitaxy Growth of [CrGe/MnGe/FeGe] Superlattices: Toward Artificial B20 Skyrmion Materials with Tunable Interactions
Authors:
Adam S. Ahmed,
Bryan D. Esser,
James Rowland,
David W. McComb,
Roland K. Kawakami
Abstract:
Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically,…
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Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(111) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, x-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.
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Submitted 16 February, 2017;
originally announced February 2017.
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Epitaxial Co-Deposition Growth of CaGe2 Films by Molecular Beam Epitaxy for Large Area Germanane
Authors:
Igor V. Pinchuk,
Patrick M. Odenthal,
Adam S. Ahmed,
Walid Amamou,
Joshua E. Goldberger,
Roland K. Kawakami
Abstract:
Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit coupling. Here, we report the successful co-deposition growth of CaGe2 films on Ge(111) substrates by molecular beam epitaxy (MBE) and their subsequent conversi…
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Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit coupling. Here, we report the successful co-deposition growth of CaGe2 films on Ge(111) substrates by molecular beam epitaxy (MBE) and their subsequent conversion to germanane by immersion in hydrochloric acid. We find that the growth of CaGe2 occurs within an adsorption-limited growth regime, which ensures stoichiometry of the film. We utilize in situ reflection high energy electron diffraction (RHEED) to explore the growth temperature window and find the best RHEED patterns at 750 °C. Finally, the CaGe2 films are immersed in hydrochloric acid to convert the films to germanane. Auger electron spectroscopy of the resulting film indicates the removal of Ca and RHEED patterns indicate a single-crystal film with in-plane orientation dictated by the underlying Ge(111) substrate. X-ray diffraction and Raman spectroscopy indicate that the resulting films are indeed germanane. Ex situ atomic force microscopy (AFM) shows that the grain size of the germanane is on the order of a few micrometers, being primarily limited by terraces induced by the miscut of the Ge substrate. Thus, optimization of the substrate could lead to the long-term goal of large area germanane films.
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Submitted 18 December, 2013;
originally announced December 2013.
