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Electrostatic control of quantum phases in KTaO3-based planar constrictions
Authors:
Jordan T. McCourt,
Ethan G. Arnault,
Merve Baksi,
Samuel J. Poage,
Salva Salmani-Rezaie,
Divine P. Kumah,
Kaveh Ahadi,
Gleb Finkelstein
Abstract:
Two-dimensional electron gases (2DEGs) formed at complex oxide interfaces offer a unique platform to engineer quantum nanostructures. However, scalable fabrication of locally addressable devices in these materials remains challenging. Here, we demonstrate an efficient fabrication approach by patterning narrow constrictions in a superconducting KTaO3-based heterostructure. The constrictions are ind…
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Two-dimensional electron gases (2DEGs) formed at complex oxide interfaces offer a unique platform to engineer quantum nanostructures. However, scalable fabrication of locally addressable devices in these materials remains challenging. Here, we demonstrate an efficient fabrication approach by patterning narrow constrictions in a superconducting KTaO3-based heterostructure. The constrictions are individually tunable via the coplanar side gates formed within the same 2DEG plane. Our technique leverages the high dielectric permittivity of KTaO3 (epsilon_r ~ 5000) to achieve strong electrostatic modulation of the superconducting 2DEG. Transport measurements through the constriction reveal a range of transport regimes: Within the superconducting state, we demonstrate efficient modulation of the critical current and Berezinskii Kosterlitz Thouless (BKT) transition temperature at the weak link. Further tuning of the gate voltage reveals an unexpectedly regular Coulomb blockade pattern. All of these states are achievable with a side gate voltage |V_SG| < 1 V. The fabrication process is scalable and versatile, enabling a platform both to make superconducting field-effect transistors and to study a wide array of physical phenomena present at complex oxide interfaces.
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Submitted 23 June, 2025;
originally announced June 2025.
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Superconductivity in tin telluride films grown by molecular beam epitaxy
Authors:
Antonio Gonzalez,
Samuel J. Poage,
Bernardo Langa, Jr.,
Deepak Sapkota,
Salva Salmani-Rezaie,
Shalinee Chikara,
Michael D. Williams,
David A. Muller,
Kasra Sardashti,
Kaveh Ahadi
Abstract:
The intersection of superconductivity and ferroelectricity hosts a wide range of exotic quantum phenomena. Here, we report on the observation of superconductivity in high-quality tin telluride films grown by molecular beam epitaxy. Unintentionally doped tin telluride undergoes a ferroelectric transition at ~100 K. The critical temperature of superconductivity increases monotonically with indium co…
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The intersection of superconductivity and ferroelectricity hosts a wide range of exotic quantum phenomena. Here, we report on the observation of superconductivity in high-quality tin telluride films grown by molecular beam epitaxy. Unintentionally doped tin telluride undergoes a ferroelectric transition at ~100 K. The critical temperature of superconductivity increases monotonically with indium concentration. The critical field of superconductivity, however, does not follow the same behavior as critical temperature with indium concentration and exhibits a carrier-density-dependent violation of the Pauli limit. The electron-phonon coupling, from the McMillan formula, exhibits a systematic enhancement with indium concentration, suggesting a potential violation of BCS weak coupling at high indium concentrations.
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Submitted 12 March, 2025;
originally announced March 2025.
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Spin-to-charge conversion at KTaO3(111) interfaces
Authors:
Athby H. Al-Tawhid,
Rui Sun,
Andrew H. Comstock,
Divine P. Kumah,
Dali Sun,
Kaveh Ahadi
Abstract:
Rashba spin-orbit coupling locks the spin with momentum of charge carriers at the broken inversion interfaces, which could generate a large spin galvanic response. Here, we demonstrate spin-to-charge conversion (inverse Rashba-Edelstein effect) in KTaO3(111) two-dimensional electron systems. We explain the results in the context of electronic structure, orbital character, and spin texture at the K…
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Rashba spin-orbit coupling locks the spin with momentum of charge carriers at the broken inversion interfaces, which could generate a large spin galvanic response. Here, we demonstrate spin-to-charge conversion (inverse Rashba-Edelstein effect) in KTaO3(111) two-dimensional electron systems. We explain the results in the context of electronic structure, orbital character, and spin texture at the KTaO3(111) interfaces. We also show that the angle dependence of the spin-to-charge conversion on in-plane magnetic field exhibits a nontrivial behavior which matches the symmetry of the Fermi states. Results point to opportunities to use spin-to-charge conversion as a tool to investigate the electronic structure and spin texture.
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Submitted 20 February, 2025;
originally announced February 2025.
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Violation of Pauli Limit at KTaO3(110) Interfaces
Authors:
Samuel J. Poage,
Xueshi Gao,
Merve Baksi,
Salva Salmani-Rezaie,
David A. Muller,
Divine P. Kumah,
Chun Ning Lau,
Jose Lorenzana,
Maria N. Gastiasoro,
Kaveh Ahadi
Abstract:
The superconducting order parameter at the KTaO3 interfaces and its dependence on interface orientation remains a subject of debate. The superconductivity at these interfaces exhibits strong resilience against in-plane magnetic field and violates Pauli limit. The interface orientation dependence of critical field and violation of Pauli limit, however, have not been investigated. To address this pr…
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The superconducting order parameter at the KTaO3 interfaces and its dependence on interface orientation remains a subject of debate. The superconductivity at these interfaces exhibits strong resilience against in-plane magnetic field and violates Pauli limit. The interface orientation dependence of critical field and violation of Pauli limit, however, have not been investigated. To address this problem, we grew epitaxial LaMnO3/KTaO3 heterostructures using molecular beam epitaxy. We show that superconductivity is extremely robust against the in-plane magnetic field. Our results indicate that the interface orientation, despite impacting the critical temperature, does not affect the ratio of critical field to the Pauli limiting field. These results offer opportunities to engineer superconductors which are resilient against magnetic field.
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Submitted 18 February, 2025;
originally announced February 2025.
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Enhanced Critical Field of Superconductivity at an Oxide Interface
Authors:
Athby H. Al-Tawhid,
Samuel J. Poage,
Salva Salmani-Rezaie,
Shalinee Chikara,
David A. Muller,
Divine P. Kumah,
Maria N. Gastiasoro,
Jose Lorenzana,
Kaveh Ahadi
Abstract:
The nature of superconductivity and its interplay with strong spin-orbit coupling at the KTaO3(111) interfaces remains a subject of debate. To address this problem, we grew epitaxial LaMnO3/KTaO3(111) heterostructures. We show that superconductivity is robust against the in-plane magnetic field, with the critical field of superconductivity reaching 25 T in optimally doped heterostructures. The sup…
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The nature of superconductivity and its interplay with strong spin-orbit coupling at the KTaO3(111) interfaces remains a subject of debate. To address this problem, we grew epitaxial LaMnO3/KTaO3(111) heterostructures. We show that superconductivity is robust against the in-plane magnetic field, with the critical field of superconductivity reaching 25 T in optimally doped heterostructures. The superconducting order parameter is highly sensitive to carrier density. We argue that spin-orbit coupling drives the formation of anomalous quasiparticles with vanishing magnetic moment, providing the condensate significant immunity against magnetic fields beyond the Pauli paramagnetic limit. These results offer design opportunities for superconductors with extreme resilience against magnetic field.
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Submitted 27 April, 2023;
originally announced April 2023.
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Molecular Beam Epitaxy of KTaO$_3$
Authors:
Tobias Schwaigert,
Salva Salmani-Razaie,
Matthew R. Barone,
Hanjong Paik,
Ethan Ray,
Michael D. Williams,
David A. Muller,
Darrell G. Schlom,
Kaveh Ahadi
Abstract:
Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 co…
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Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 contained in a conventional effusion cell as well as an electron-beam-heated tantalum source. Excess potassium and a combination of ozone and oxygen (10 \% O3 + 90 \% O2) were simultaneously supplied with the TaO$_2$ (or tantalum) molecular beams to grow the KTaO$_3$ films. Laue fringes suggest that the films are smooth with an abrupt film/substrate interface. Cross-sectional scanning transmission electron microscopy does not show any extended defects and confirms that the films have an atomically abrupt interface with the substrate. Atomic force microscopy reveals atomic steps at the surface of the grown films. Reciprocal space mapping demonstrates that the films, when sufficiently thin, are coherently strained to the SrTiO$_3$ (001) and GdScO$_3$ (110) substrates.
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Submitted 29 December, 2022;
originally announced December 2022.
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Coexistence of superconductivity and weak anti-localization at KTaO3 (111) interfaces
Authors:
Athby H. Al-Tawhid,
Jesse Kanter,
Mehdi Hatefipour,
Divine P. Kumah,
Javad Shabani,
Kaveh Ahadi
Abstract:
The intersection of two-dimensional superconductivity and topologically nontrivial states hosts a wide range of quantum phenomena, including Majorana fermions. Coexistence of topologically nontrivial states and superconductivity in a single material, however, remains elusive. Here, we report on the observation of two-dimensional superconductivity and weak anti-localization at the TiOx/KTaO3(111) i…
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The intersection of two-dimensional superconductivity and topologically nontrivial states hosts a wide range of quantum phenomena, including Majorana fermions. Coexistence of topologically nontrivial states and superconductivity in a single material, however, remains elusive. Here, we report on the observation of two-dimensional superconductivity and weak anti-localization at the TiOx/KTaO3(111) interfaces. A remnant, saturating resistance persists below the transition temperature as superconducting puddles fail to reach phase coherence. Signatures of weak anti-localization are observed below the superconducting transition, suggesting the coexistence of superconductivity and weak anti-localization. The superconducting interfaces show roughly one order of magnitude larger weak anti-localization correction, compared to non-superconducting interfaces, alluding to a relatively large coherence length in these interfaces.
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Submitted 20 September, 2021;
originally announced September 2021.
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Oxygen vacancy-induced anomalous Hall effect in a nominally non-magnetic oxide
Authors:
Athby H. Al-Tawhid,
Jesse Kanter,
Mehdi Hatefipour,
Douglas L. Irving,
Divine P. Kumah,
Javad Shabani,
Kaveh Ahadi
Abstract:
The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic cro…
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The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic crossover. A paramagnetic behavior is observed in reduced samples using first principles calculations and quantitative magnetometry. The observed anomalous Hall effect follows the oxygen vacancy-induced magnetization response, suggesting that the localized magnetic moments of the oxygen vacancies scatter conduction electrons asymmetrically and give rise to anomalous Hall effect. The anomalous Hall conductivity becomes insensitive to scattering rate in the low temperature limit (T<5 K), implying that the Berry curvature of the electrons on the Fermi surface controls the anomalous Hall effect. Our observations describe a detailed picture of many-body interactions, triggering anomalous Hall effect in a non-magnetic system.
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Submitted 27 December, 2022; v1 submitted 16 September, 2021;
originally announced September 2021.
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Topological Quantum Matter to Topological Phase Conversion: Fundamentals, Materials, Physical Systems for Phase Conversions, and Device Applications
Authors:
Md Mobarak Hossain Polash,
Shahram Yalameha,
Haihan Zhou,
Kaveh Ahadi,
Zahra Nourbakhsh,
Daryoosh Vashaee
Abstract:
The spin-orbit coupling field, an atomic magnetic field inside a Kramer's system, or discrete symmetries can create a topological torus in the Brillouin Zone and provide protected edge or surface states, which can contain relativistic fermions, namely, Dirac and Weyl Fermions. The topology-protected helical edge or surface states and the bulk electronic energy band define different quantum or topo…
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The spin-orbit coupling field, an atomic magnetic field inside a Kramer's system, or discrete symmetries can create a topological torus in the Brillouin Zone and provide protected edge or surface states, which can contain relativistic fermions, namely, Dirac and Weyl Fermions. The topology-protected helical edge or surface states and the bulk electronic energy band define different quantum or topological phases of matters, offering an excellent prospect for some unique device applications. Device applications of the quantum materials rely primarily on understanding the topological properties, their mutual conversion processes under different external stimuli, and the physical system for achieving the phase conversion. There have been tremendous efforts in finding new topological materials with exotic topological phases. However, the application of the topological properties in devices is still limited due to the slow progress in developing the physical structures for controlling the topological phase conversions. Such control systems often require extreme tuning conditions or the fabrication of complex multi-layered topological structures. This review article highlights the details of the topological phases, their conversion processes, along with their potential physical systems, and the prospective application fields. A general overview of the critical factors for topological phases and the materials properties are further discussed to provide the necessary background for the following sections.
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Submitted 6 April, 2021; v1 submitted 11 February, 2021;
originally announced February 2021.
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Magneto-Elastic Coupling to Coherent Acoustic Phonon Modes in Ferrimagnetic Insulator GdTiO$_3$
Authors:
D. J. Lovinger,
E. Zoghlin,
P. Kissin,
G. Ahn,
K. Ahadi,
P. Kim,
M. Poore,
S. Stemmer,
S. J. Moon,
S. D. Wilson,
R. D. Averitt
Abstract:
In this work we investigate single crystal GdTiO$_{3}$, a promising candidate material for Floquet engineering and magnetic control, using ultrafast optical pump-probe reflectivity and magneto-optical Kerr spectroscopy. GdTiO${}_{3}$ is a Mott-Hubbard insulator with a ferrimagnetic and orbitally ordered ground state (\textit{T${}_{C}$} = 32 K). We observe multiple signatures of the magnetic phase…
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In this work we investigate single crystal GdTiO$_{3}$, a promising candidate material for Floquet engineering and magnetic control, using ultrafast optical pump-probe reflectivity and magneto-optical Kerr spectroscopy. GdTiO${}_{3}$ is a Mott-Hubbard insulator with a ferrimagnetic and orbitally ordered ground state (\textit{T${}_{C}$} = 32 K). We observe multiple signatures of the magnetic phase transition in the photoinduced reflectivity signal, in response to above band-gap 660 nm excitation. Magnetic dynamics measured via Kerr spectroscopy reveal optical perturbation of the ferrimagnetic order on spin-lattice coupling timescales, highlighting the competition between the Gd${}^{3+}$ and Ti${}^{3+}$ magnetic sub-lattices. Furthermore, a strong coherent oscillation is present in the reflection and Kerr dynamics, attributable to an acoustic strain wave launched by the pump pulse. The amplitude of this acoustic mode is highly dependent on the magnetic order of the system, growing sharply in magnitude at \textit{T${}_{C}$}, indicative of strong magneto-elastic coupling. The driving mechanism, involving strain-induced modification of the magnetic exchange interaction, implies an indirect method of coupling light to the magnetic degrees of freedom and emphasizes the potential of GdTiO${}_{3}$ as a tunable quantum material.
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Submitted 21 September, 2020;
originally announced September 2020.
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Order-Disorder Ferroelectric Transition of Strained SrTiO3
Authors:
Salva Salmani-Rezaie,
Kaveh Ahadi,
William M. Strickland,
Susanne Stemmer
Abstract:
SrTiO3 is an incipient ferroelectric that is believed to exhibit a prototype displacive, soft mode ferroelectric transition when subjected to mechanical stress or alloying. We use high-angle annular dark-field imaging in scanning transmission electron microscopy to reveal local polar regions in the room-temperature, paraelectric phase of strained SrTiO3 films, which undergo a ferroelectric transit…
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SrTiO3 is an incipient ferroelectric that is believed to exhibit a prototype displacive, soft mode ferroelectric transition when subjected to mechanical stress or alloying. We use high-angle annular dark-field imaging in scanning transmission electron microscopy to reveal local polar regions in the room-temperature, paraelectric phase of strained SrTiO3 films, which undergo a ferroelectric transition at low temperatures. These films contain nanometer-sized domains in which the Ti columns are displaced. In contrast, these nanodomains are absent in unstrained films, which do not become ferroelectric. The results show that the ferroelectric transition of strained SrTiO3 is an order-disorder transition. We discuss the impact of the results on the nature of the ferroelectric transition of SrTiO3.
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Submitted 5 August, 2020;
originally announced August 2020.
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Correlating magnetic structure and magnetotransport in semimetal thin films of Eu$_{1-x}$Sm$_x$TiO$_3$
Authors:
Zach Porter,
Ryan F. Need,
Kaveh Ahadi,
Yang Zhao,
Zhijun Xu,
Brian J. Kirby,
Jeffrey W. Lynn,
Susanne Stemmer,
Stephen D. Wilson
Abstract:
We report on the evolution of the average and depth-dependent magnetic order in thin film samples of biaxially stressed and electron-doped EuTiO$_3$ for samples across a doping range $<$0.1 to 7.8 $\times 10^{20}$ cm$^{-3}$. Under an applied in-plane magnetic field, the G-type antiferromagnetic ground state undergoes a continuous spin-flop phase transition into in-plane, field-polarized ferromagne…
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We report on the evolution of the average and depth-dependent magnetic order in thin film samples of biaxially stressed and electron-doped EuTiO$_3$ for samples across a doping range $<$0.1 to 7.8 $\times 10^{20}$ cm$^{-3}$. Under an applied in-plane magnetic field, the G-type antiferromagnetic ground state undergoes a continuous spin-flop phase transition into in-plane, field-polarized ferromagnetism. The critical field for ferromagnetism slightly decreases with an increasing number of free carriers, yet the field evolution of the spin-flop transition is qualitatively similar across the doping range. Unexpectedly, we observe interfacial ferromagnetism with saturated Eu$^{2+}$ moments at the substrate interface at low fields preceding ferromagnetic saturation throughout the bulk of the degenerate semiconductor film. We discuss the implications of these findings for the unusual magnetotransport properties of this compound.
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Submitted 20 May, 2020;
originally announced May 2020.
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Possible signatures of mixed-parity superconductivity in doped polar SrTiO3 films
Authors:
Timo Schumann,
Luca Galletti,
Hanbyeol Jeong,
Kaveh Ahadi,
William M. Strickland,
Salva Salmani-Rezaie,
Susanne Stemmer
Abstract:
Superconductors that possess both broken spatial inversion symmetry and spin-orbit interactions exhibit a mix of spin singlet and triplet pairing. Here, we report on measurements of the superconducting properties of electron-doped, strained SrTiO3 films. These films have an enhanced superconducting transition temperature and were previously shown to undergo a transition to a polar phase prior to b…
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Superconductors that possess both broken spatial inversion symmetry and spin-orbit interactions exhibit a mix of spin singlet and triplet pairing. Here, we report on measurements of the superconducting properties of electron-doped, strained SrTiO3 films. These films have an enhanced superconducting transition temperature and were previously shown to undergo a transition to a polar phase prior to becoming superconducting. We show that some films show signatures of an unusual superconducting state, such as an in-plane critical field that is higher than both the paramagnetic and orbital pair breaking limits. Moreover, nonreciprocal transport, which reflects the ratio of odd versus even pairing interactions, is observed. Together, these characteristics indicate that these films provide a tunable platform for investigations of unconventional superconductivity.
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Submitted 23 March, 2020;
originally announced March 2020.
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Ferroelectric enhancement of superconductivity in compressively strained SrTiO$_3$ films
Authors:
Ryan Russell,
Noah Ratcliff,
Kaveh Ahadi,
Lianyang Dong,
Susanne Stemmer,
John W. Harter
Abstract:
SrTiO$_3$ is an incipient ferroelectric on the verge of a polar instability, which is avoided at low temperatures by quantum fluctuations. Within this unusual quantum paraelectric phase, superconductivity persists despite extremely dilute carrier densities. Ferroelectric fluctuations have been suspected to play a role in the origin of superconductivity by contributing to electron pairing. To inves…
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SrTiO$_3$ is an incipient ferroelectric on the verge of a polar instability, which is avoided at low temperatures by quantum fluctuations. Within this unusual quantum paraelectric phase, superconductivity persists despite extremely dilute carrier densities. Ferroelectric fluctuations have been suspected to play a role in the origin of superconductivity by contributing to electron pairing. To investigate this possibility, we used optical second harmonic generation to measure the doping and temperature dependence of the ferroelectric order parameter in compressively strained SrTiO$_3$ thin films. At low temperatures, we uncover a spontaneous out-of-plane ferroelectric polarization with an onset that correlates perfectly with normal-state electrical resistivity anomalies. These anomalies have previously been associated with an enhancement of the superconducting critical temperature in doped SrTiO$_3$ films, directly linking the ferroelectric and superconducting phases. We develop a long-range mean-field Ising model of the ferroelectric phase transition to interpret the data and extract the relevant energy scales in the system. Our results support a long-suspected connection between ferroelectricity and superconductivity in SrTiO$_3$, but call into question the role played by ferroelectric fluctuations.
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Submitted 10 September, 2019;
originally announced September 2019.
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Electron nematic fluid in a strained Sr3Ru2O7 film
Authors:
Patrick B. Marshall,
Kaveh Ahadi,
Honggyu Kim,
Susanne Stemmer
Abstract:
Sr3Ru2O7 belongs to the family of layered strontium ruthenates and exhibits a range of unusual emergent properties, such as electron nematic behavior and metamagnetism. Here, we show that epitaxial film strain significantly modifies these phenomena. In particular, we observe enhanced magnetic interactions and an electron nematic phase that extends to much higher temperatures and over a larger magn…
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Sr3Ru2O7 belongs to the family of layered strontium ruthenates and exhibits a range of unusual emergent properties, such as electron nematic behavior and metamagnetism. Here, we show that epitaxial film strain significantly modifies these phenomena. In particular, we observe enhanced magnetic interactions and an electron nematic phase that extends to much higher temperatures and over a larger magnetic field range than in bulk single crystals. Furthermore, the films show an unusual anisotropic non-Fermi liquid behavior that is controlled by the direction of the applied magnetic field. At high magnetic fields the metamagnetic transition to a ferromagnetic phase recovers isotropic Fermi-liquid behavior. The results support the interpretation that these phenomena are linked to the special features of the Fermi surface, which can be tuned by both film strain and an applied magnetic field.
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Submitted 23 April, 2018;
originally announced April 2018.
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Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface
Authors:
Kaveh Ahadi,
Honggyu Kim,
Susanne Stemmer
Abstract:
Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~ 3.9x10^14 cm^-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, in…
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Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~ 3.9x10^14 cm^-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.
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Submitted 11 April, 2018;
originally announced April 2018.
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Evidence of a topological Hall effect in Eu$_{1-x}$Sm$_x$TiO$_3$
Authors:
Kaveh Ahadi,
Luca Galletti,
Susanne Stemmer
Abstract:
We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1-xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall resistivity of the Eu0.955Sm0.045TiO3 films exhibits the anomalous Hall effect below the Curie temperature of ~ 5 K as well as additional features that appear at…
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We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1-xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall resistivity of the Eu0.955Sm0.045TiO3 films exhibits the anomalous Hall effect below the Curie temperature of ~ 5 K as well as additional features that appear at 2 K. It is shown that these features are magnetic in origin and consistent with the topological Hall effect seen in materials systems with topologically nontrivial spin textures, such as skyrmions. The results open up interesting possibilities for epitaxial hybrid heterostructures that combine topological magnetic states, tunable carrier densities, and other phenomena.
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Submitted 10 October, 2017;
originally announced October 2017.
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Response of the lattice across the filling-controlled Mott metal-insulator transition of a rare earth titanate
Authors:
Honggyu Kim,
Patrick B. Marshall,
Kaveh Ahadi,
Thomas E. Mates,
Evgeny Mikheev,
Susanne Stemmer
Abstract:
The lattice response of a prototype Mott insulator, SmTiO3, to hole doping is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO3-type distortions are investigated using an atomic resolution scanning transmission el…
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The lattice response of a prototype Mott insulator, SmTiO3, to hole doping is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO3-type distortions are investigated using an atomic resolution scanning transmission electron microscopy technique that can resolve small lattice distortions with picometer precision. We show that these distortions are gradually and uniformly reduced as the Sr concentration is increased without any phase separation. Significant distortions persist into the metallic state. The results present a new picture of the physics of this prototype filling-controlled MIT, which is discussed.
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Submitted 3 October, 2017;
originally announced October 2017.
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Growth of strontium ruthenate films by hybrid molecular beam epitaxy
Authors:
Patrick B. Marshall,
Honggyu Kim,
Kaveh Ahadi,
Susanne Stemmer
Abstract:
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional MBE that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth…
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We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional MBE that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.
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Submitted 4 September, 2017;
originally announced September 2017.
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Novel metal-insulator-transition at the SrTiO3/SmTiO3 interface
Authors:
Kaveh Ahadi,
Susanne Stemmera
Abstract:
We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more than an order of magnitude. The temperature of the transition systematically depends on the carrier density, which is tuned from ~ 1x10^14 cm^-2 to 3x10^14 cm^-2…
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We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more than an order of magnitude. The temperature of the transition systematically depends on the carrier density, which is tuned from ~ 1x10^14 cm^-2 to 3x10^14 cm^-2 by changing the SmTiO3 thickness. Analysis of the transport properties shows non-Fermi liquid behavior and mass enhancement as the carrier density is lowered. We compare the MIT characteristics with those of known MITs in other materials systems and show that they are distinctly different in several aspects. We tentatively conclude that both long range Coulomb interactions and the fixed charge at the polar interface are likely to play a role in this MIT. The strong dependence on the carrier density makes this MIT of interest for field-tunable devices.
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Submitted 15 May, 2017;
originally announced May 2017.
