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Two-fluid mobility model from coupled hydrodynamic equations for simulating laser-driven semiconductor switches
Authors:
Qile Wu,
Antonín Sojka,
Brad D. Price,
Nikolay I. Agladze,
Anup Yadav,
Sophie L. Pain,
John D. Murphy,
Tim Niewelt,
Mark S. Sherwin
Abstract:
We introduce a two-fluid mobility model incorporating fundamental aspects of electron-hole (e-h) scattering such as momentum conservation for simulating laser-driven semiconductor switches (LDSSs). Compared to previous works that use Matthiessen's rule, the two-fluid mobility model predicts distinct AC responses of e-h plasmas in semiconductors. Based on the two-fluid mobility model, we develop a…
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We introduce a two-fluid mobility model incorporating fundamental aspects of electron-hole (e-h) scattering such as momentum conservation for simulating laser-driven semiconductor switches (LDSSs). Compared to previous works that use Matthiessen's rule, the two-fluid mobility model predicts distinct AC responses of e-h plasmas in semiconductors. Based on the two-fluid mobility model, we develop a theory with very few adjustable parameters for simulating the switching performance of LDSSs based on high-purity indirect-gap semiconductors such as silicon (Si). As a prototypical application, we successfully reproduce experimentally measured reflectance at around 320 GHz in a laser-driven Si switch. By injecting e-h plasmas with densities up to $10^{20}\,\rm cm^{-3}$, we reveal the importance of carrier-screening effects in e-h scattering and Auger recombination for carrier densities above the critical carrier density for exciton-plasma Mott transition. Our results also suggest a way to characterize the intrinsic momentum-relaxation mechanism, e-h scattering, and the intrinsic e-h recombination mechanism in indirect-gap semiconductors, Auger recombination. We reassess the ambipolar Auger coefficient of high-purity Si with high injection levels of e-h plasmas up to $10^{20}\,\rm cm^{-3}$ and find a minimal value of $1.8\times10^{-41}\,{\rm cm^6/ns}$. The value is more than one order of magnitude smaller than the ambipolar Auger coefficient widely used for simulating LDSSs, $3.8\times10^{-40}\,{\rm cm^6/ns}$, which was deduced from minority-carrier lifetime in highly doped silicon more than four decades ago.
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Submitted 11 April, 2025; v1 submitted 7 January, 2025;
originally announced January 2025.
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Intrinsic Localized Modes Observed in the High Temperature Vibrational Spectrum of NaI
Authors:
M. E. Manley,
A. J. Sievers,
J. W. Lynn,
S. A. Kiselev,
N. I. Agladze,
Y. Chen,
A. Llobet,
A. Alatas
Abstract:
Inelastic neutron measurements of the high-temperature lattice excitations in NaI show that in thermal equilibrium at 555 K an intrinsic mode, localized in three dimensions, occurs at a single frequency near the center of the spectral phonon gap, polarized along [111]. At higher temperatures the intrinsic localized mode gains intensity. Higher energy inelastic neutron and x-ray scattering measur…
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Inelastic neutron measurements of the high-temperature lattice excitations in NaI show that in thermal equilibrium at 555 K an intrinsic mode, localized in three dimensions, occurs at a single frequency near the center of the spectral phonon gap, polarized along [111]. At higher temperatures the intrinsic localized mode gains intensity. Higher energy inelastic neutron and x-ray scattering measurements on a room-temperature NaI crystal indicate that the creation energy of the ground state of the intrinsic localized mode is 299 meV.
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Submitted 30 April, 2009; v1 submitted 15 October, 2008;
originally announced October 2008.
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Glass-like two-level systems in minimally disordered mixed crystals
Authors:
J. P. Wrubel,
B. E. Hubbard,
N. I. Agladze,
A. J. Sievers,
P. P. Fedorov,
D. I. Klimenchenko,
A. I. Ryskin,
J. A. Campbell
Abstract:
THz spectroscopy is used to identify a broad distribution of two-level systems, characteristic of glasses, in the substitutional monatomic mixed crystal systems, Ba_{1-x}Ca_xF_2 and Pb_{1-x}Ca_xF_2. In these minimally disordered systems, two-level behavior begins at a specific CaF_2 concentration. The concentration dependence, successfully modeled using the statistics of the impurity distributio…
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THz spectroscopy is used to identify a broad distribution of two-level systems, characteristic of glasses, in the substitutional monatomic mixed crystal systems, Ba_{1-x}Ca_xF_2 and Pb_{1-x}Ca_xF_2. In these minimally disordered systems, two-level behavior begins at a specific CaF_2 concentration. The concentration dependence, successfully modeled using the statistics of the impurity distribution in the lattice, points to a collective dopant tunneling mechanism.
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Submitted 21 November, 2005; v1 submitted 18 November, 2005;
originally announced November 2005.
