-
Chiral Phase Change Nanomaterials
Authors:
Joshua A. Burrow,
Md Shah Alam,
Evan M. Smith,
Riad Yahiaoui,
Ryan Laing,
Piyush J. Shah,
Thomas A. Searles,
Shivashankar Vangala,
Joshua R. Hendrickson,
Andrew Sarangan,
Imad Agha
Abstract:
Chiral nanostructures offer the ability to respond to the vector nature of a light beam at the nanoscale. While naturally chiral materials offer a path towards scalability, engineered structures offer a path to wavelength tunability through geometric manipulation. Neither approach, however, allows for temporal control of chirality. Therefore, in the best of all worlds, it is crucial to realize chi…
▽ More
Chiral nanostructures offer the ability to respond to the vector nature of a light beam at the nanoscale. While naturally chiral materials offer a path towards scalability, engineered structures offer a path to wavelength tunability through geometric manipulation. Neither approach, however, allows for temporal control of chirality. Therefore, in the best of all worlds, it is crucial to realize chiral materials that possess the quality of scalability, tailored wavelength response, and dynamic control at high speeds. Here, a new class of intrinsically chiral phase change nanomaterials (PCNMs) is proposed and explored, based on a scalable bottom-up fabrication technique with a high degree of control in three dimensions. Angular resolved Mueller Matrix and spectroscopic ellipsometry are performed to characterize the optical birefringence and dichroism, and a numerical model is provided to explain the origin of optical activity. This work achieves the critical goal of demonstrating high-speed dynamic switching of chirality over 50,000 cycles via the underlying PCNM.
△ Less
Submitted 18 November, 2021;
originally announced November 2021.
-
Improving the performance of Ge$_2$Sb$_2$Te$_5$ materials via nickel doping: Towards RF-compatible phase-change devices
Authors:
Pengfei Guo,
Joshua A. Burrow,
Gary A. Sevison,
Aditya Sood,
Mehdi Asheghi,
Joshua R. Hendrickson,
Kenneth E. Goodson,
Imad Agha,
Andrew Sarangan
Abstract:
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most imp…
▽ More
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most importantly, our results show that doping produces the desired electrical performance without adversely affecting the film's optical properties. The nickel doping level is approximately 2% and the lattice structure remains nearly unchanged when compared with undoped-GST. The refractive indices at amorphous and crystalline states were obtained using ellipsometry which echoes the results from XRD. The material's thermal transport properties are measured using time-domain thermoreflectance (TDTR), showing no change upon doping. The advantages of this doping system will open up new opportunities for designing electrically reconfigurable high speed optical elements in the near-infrared spectrum.
△ Less
Submitted 5 September, 2018;
originally announced October 2018.
-
Improving the performance of bright quantum dot single photon sources using amplitude modulation
Authors:
Serkan Ates,
Imad Agha,
Angelo Gulinatti,
Ivan Rech,
Antonio Badolato,
Kartik Srinivasan
Abstract:
Single epitaxially-grown semiconductor quantum dots have great potential as single photon sources for photonic quantum technologies, though in practice devices often exhibit non-ideal behavior. Here, we demonstrate that amplitude modulation can improve the performance of quantum-dot-based sources. Starting with a bright source consisting of a single quantum dot in a fiber-coupled microdisk cavity,…
▽ More
Single epitaxially-grown semiconductor quantum dots have great potential as single photon sources for photonic quantum technologies, though in practice devices often exhibit non-ideal behavior. Here, we demonstrate that amplitude modulation can improve the performance of quantum-dot-based sources. Starting with a bright source consisting of a single quantum dot in a fiber-coupled microdisk cavity, we use synchronized amplitude modulation to temporally filter the emitted light. We observe that the single photon purity, temporal overlap between successive emission events, and indistinguishability can be greatly improved with this technique. As this method can be applied to any triggered single photon source, independent of geometry and after device fabrication, it is a flexible approach to improve the performance of solid-state systems, which often suffer from excess dephasing and multi-photon background emission.
△ Less
Submitted 10 August, 2012;
originally announced August 2012.
-
Two-photon interference using background-free quantum frequency conversion of single photons from a semiconductor quantum dot
Authors:
Serkan Ates,
Imad Agha,
Angelo Gulinatti,
Ivan Rech,
Matthew T. Rakher,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We show that quantum frequency conversion (QFC) can overcome the spectral distinguishability common to inhomogeneously broadened solid-state quantum emitters. QFC is implemented by combining single photons from an InAs quantum dot (QD) at 980 nm with a 1550 nm pump laser in a periodically-poled lithium niobate (PPLN) waveguide to generate photons at 600 nm with a signal-to-background ratio exceedi…
▽ More
We show that quantum frequency conversion (QFC) can overcome the spectral distinguishability common to inhomogeneously broadened solid-state quantum emitters. QFC is implemented by combining single photons from an InAs quantum dot (QD) at 980 nm with a 1550 nm pump laser in a periodically-poled lithium niobate (PPLN) waveguide to generate photons at 600 nm with a signal-to-background ratio exceeding 100:1. Photon correlation and two-photon interference measurements confirm that both the single photon character and wavepacket interference of individual QD states are preserved during frequency conversion. Finally, we convert two spectrally separate QD transitions to the same wavelength in a single PPLN waveguide and show that the resulting field exhibits non-classical two-photon interference.
△ Less
Submitted 17 July, 2012;
originally announced July 2012.
-
Background-free quantum frequency conversion of single photons from a semiconductor quantum dot
Authors:
Serkan Ates,
Imad Agha,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We demonstrate background-free quantum frequency conversion of single photons from an epitaxially-grown InAs quantum dot. Single photons at \approx 980 nm are combined with a pump laser near 1550 nm inside a periodically-poled lithium niobate (PPLN) waveguide, generating single photons at \approx 600 nm. The large red-detuning between the pump and signal wavelengths ensures nearly background-free…
▽ More
We demonstrate background-free quantum frequency conversion of single photons from an epitaxially-grown InAs quantum dot. Single photons at \approx 980 nm are combined with a pump laser near 1550 nm inside a periodically-poled lithium niobate (PPLN) waveguide, generating single photons at \approx 600 nm. The large red-detuning between the pump and signal wavelengths ensures nearly background-free conversion, avoiding processes such as upconversion of anti-Stokes Raman scattered pump photons in the PPLN crystal. Second-order correlation measurements on the single photon stream are performed both before and after conversion, confirming the preservation of photon statistics during the frequency conversion process.
△ Less
Submitted 10 May, 2012;
originally announced May 2012.
