Showing 1–22 of 22 results for author: Agarwal, H

Realization of broken inversion symmetry in the charge density wave phase in EuAl$_4$

Authors: Surya Rohith Kotla, Leila Noohinejad, Preeti Pokhriyal, Martin Tolkiehn, Harshit Agarwal, Sitaram Ramakrishnan, Sander van Smaalen

Abstract: EuAl$_4$ exhibits a complex phase diagram, including the development of a charge density wave (CDW) below $T_{CDW} = 145$ K. Below $T_{N}=15.4$ K, a series of antiferromagnetically (AFM) ordered phases appear, while non-trivial topological phases, like skyrmion lattices, are stabilized under an applied magnetic field. The symmetries of the variously ordered phases are a major issue concerning the… ▽ More EuAl$_4$ exhibits a complex phase diagram, including the development of a charge density wave (CDW) below $T_{CDW} = 145$ K. Below $T_{N}=15.4$ K, a series of antiferromagnetically (AFM) ordered phases appear, while non-trivial topological phases, like skyrmion lattices, are stabilized under an applied magnetic field. The symmetries of the variously ordered phases are a major issue concerning the understanding of the stabilization of the ordered phases as well as concerning the interplay between the various types of order. EuAl$_4$ at room temperature has tetragonal symmetry with space group $I4/mmm$. The CDW phase has an incommensurately modulated crystal structure described by the modulation wave vector $\mathbf{q} \approx 0.17\,\mathbf{c}^{*}$. On the basis of various experiments, including elastic and inelastic x-ray scattering, and second-harmonic generation, it has been proposed that the symmetry of the CDW phase of EuAl$_4$ could be centrosymmetric orthorhombic, non-centrosymmetric orthorhombic or non-centrosymmetric tetragonal. Here, we report temperature-dependent, single-crystal x-ray diffraction experiments that show that the CDW is a transverse CDW with phason disorder, and with non-centrosymmetric symmetry according to the orthorhombic superspace group $F222(0\,0\,σ)00s$.Essential for this finding is the availability of a sufficient number of second-order ($2\mathbf{q}$) satellite reflections in the x-ray diffraction data set. The broken inversion symmetry implies that skyrmions might form due to Dzyaloshinskii-Moriya (DM) interactions, instead of a more exotic mechanism as it is required for centrosymmetric structures. △ Less

Submitted 2 June, 2025; originally announced June 2025.

Single-photon detection enabled by negative differential conductivity in moiré superlattices

Authors: Krystian Nowakowski, Hitesh Agarwal, Sergey Slizovskiy, Robin Smeyers, Xueqiao Wang, Zhiren Zheng, Julien Barrier, David Barcons Ruiz, Geng Li, Riccardo Bertini, Matteo Ceccanti, Iacopo Torre, Bert Jorissen, Antoine Reserbat-Plantey, Kenji Watanabe, Takashi Taniguchi, Lucian Covaci, Milorad V. Milošević, Vladimir Fal'ko, Pablo Jarillo-Herrero, Roshan Krishna Kumar, Frank H. L. Koppens

Abstract: Detecting individual light quanta is essential for quantum information, space exploration, advanced machine vision, and fundamental science. Here, we introduce a novel single photon detection mechanism using highly photosensitive non-equilibrium electron phases in moiré materials. Using tunable bands in bilayer graphene/hexagonal-boron nitride superlattices, we engineer negative differential condu… ▽ More Detecting individual light quanta is essential for quantum information, space exploration, advanced machine vision, and fundamental science. Here, we introduce a novel single photon detection mechanism using highly photosensitive non-equilibrium electron phases in moiré materials. Using tunable bands in bilayer graphene/hexagonal-boron nitride superlattices, we engineer negative differential conductance and a sensitive bistable state capable of detecting single photons. Operating in this regime, we demonstrate single-photon counting at mid-infrared (11.3 microns) and visible wavelengths (675 nanometres) and temperatures up to 25 K. This detector offers new prospects for broadband, high-temperature quantum technologies with CMOS compatibility and seamless integration into photonic integrated circuits (PICs). Our analysis suggests the mechanism underlying our device operation originates from negative differential velocity, and represents an important milestone in the field of high-bias transport in two-dimensional moiré quantum materials. △ Less

Submitted 19 May, 2025; originally announced May 2025.

In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching

Authors: Hitesh Agarwal, Antoine Reserbat-Plantey, David Barcons Ruiz, Karuppasammy Soundarapandian, Geng Li, Vahagn Mkhitaryan, Johann Osmond, Helena Lozano, Kenji Watanabe, Takashi Taniguchi, Petr Stepanov, Frank. H. L. Koppens, Roshan Krishna Kumar

Abstract: Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal boron nitride (hBN), the most commonly used dielectric material, has proven indispensable in this field, allowing the encapsulation of active 2D materials preserving their exceptional electronic… ▽ More Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal boron nitride (hBN), the most commonly used dielectric material, has proven indispensable in this field, allowing the encapsulation of active 2D materials preserving their exceptional electronic quality. However, not all device applications require full encapsulation but rather require open surfaces, or even selective patterning of hBN layers. Here, we report on a procedure to engineer top hBN layers within van der Waals heterostructures while preserving the underlying active 2D layers. Using a soft selective SF6 etching combined with a series of pre and post-etching treatments, we demonstrate that pristine surfaces can be exposed with atomic flatness while preserving the active layers electronic quality. We benchmark our technique using graphene encapsulated with hBN Hall bar devices. Using Raman spectroscopy combined with quantum transport, we show high quality can be preserved in etched regions by demonstrating low temperature carrier mobilities of 200,000 cm2Vs-1, ballistic transport probed through magnetic focusing, and intrinsic room temperature phonon-limited mobilities. Atomic force microscopy brooming and O2 plasma cleaning are identified as key pre-etching steps to obtaining pristine open surfaces while preserving electronic quality. The technique provides a clean method for opening windows into mesoscopic van der Waals devices that can be used for local probe experiments, patterning top hBN in situ, and exposing 2D layers to their environment for sensing applications. △ Less

Submitted 18 March, 2025; originally announced March 2025.

Quantum geometric moment encodes stacking order of moiré matter

Authors: Surat Layek, Subhajit Sinha, Atasi Chakraborty, Ayshi Mukherjee, Heena Agarwal, Kenji Watanabe, Takashi Taniguchi, Amit Agarwal, Mandar M. Deshmukh

Abstract: Exploring the topological characteristics of electronic bands is essential in condensed matter physics. Moiré materials featuring flat bands provide a versatile platform for engineering band topology and correlation effects. In moiré materials that break either time-reversal symmetry or inversion symmetry or both, electronic bands exhibit Berry curvature hotspots. Different stacking orders in thes… ▽ More Exploring the topological characteristics of electronic bands is essential in condensed matter physics. Moiré materials featuring flat bands provide a versatile platform for engineering band topology and correlation effects. In moiré materials that break either time-reversal symmetry or inversion symmetry or both, electronic bands exhibit Berry curvature hotspots. Different stacking orders in these materials result in varied Berry curvature distributions within the flat bands, even when the band dispersion remains similar. However, experimental studies probing the impact of stacking order on the quantum geometric quantities are lacking. 1.4$^\circ$ twisted double bilayer graphene (TDBG) facilitates two distinct stacking orders (AB-AB, AB-BA) and forms an inversion broken \moire superlattice with electrically tunable flat bands. The valley Chern numbers of the flat bands depend on the stacking order, and the nonlinear Hall (NLH) effect distinguishes the differences in Berry curvature dipole (BCD), the first moment of Berry curvature. The BCD exhibits antisymmetric behavior, flipping its sign with the polarity of the perpendicular electric field in AB-AB TDBG, while it displays a symmetric behavior, maintaining the same sign regardless of the electric field's polarity in AB-BA TDBG. This approach electronically detects stacking-induced quantum geometry, while opening a pathway to quantum geometry engineering and detection. △ Less

Submitted 26 February, 2025; originally announced February 2025.

Journal ref: Adv. Mater. 2025, 2417682

Kerr non-linearity enhances the response of a graphene Josephson bolometer

Authors: Joydip Sarkar, Krishnendu Maji, Abhishek Sunamudi, Heena Agarwal, Priyanka Samanta, Anirban Bhattacharjee, Rishiraj Rajkhowa, Meghan P. Patankar, Kenji Watanabe, Takashi Taniguchi, Mandar M. Deshmukh

Abstract: Highly sensitive, broadband bolometers are of great interest because of their versatile usage in wide areas starting from dark matter search, radio astronomy, material science, and qubit readouts in cQED experiments. There have been different realizations of bolometers using superconducting thin films, nanowires, quantum dots, and various 2D materials in the recent past. The challenge is to have a… ▽ More Highly sensitive, broadband bolometers are of great interest because of their versatile usage in wide areas starting from dark matter search, radio astronomy, material science, and qubit readouts in cQED experiments. There have been different realizations of bolometers using superconducting thin films, nanowires, quantum dots, and various 2D materials in the recent past. The challenge is to have a single device that combines high sensitivity, broad bandwidth, a fast readout mechanism, and low noise. Here we demonstrate the first usage of a Josephson parametric amplifier (JPA) as a highly sensitive bolometer. Our key finding is the Kerr non-linearity of the JPA boosts the device's sensitivity. When the bolometer is biased in the non-linear regime, it enhances the sideband signals (~100 times), resulting in an order of magnitude improvement in sensitivity compared to the linear regime. In the non-linear biasing of the device, we achieve a NEP~500 aW/sqrt(Hz). Our bolometer offers a fast detection scheme with a thermal time constant of 4.26 us and an intrinsic JPA time constant of 70 ns. Our device's broadband and fast operation are key and new compared to previously studied graphene-based bolometers. In our device, the gate voltage tunability and the possibility of multiplexing combined with the sensitive bolometric performance offer an opportunity for integrated quantum sensor arrays. Our work demonstrates a way forward to enhance the performance of quantum sensors based on 2D materials by leveraging the inherent non-linear response. △ Less

Submitted 7 February, 2025; originally announced February 2025.

Electrical Spectroscopy of Polaritonic Nanoresonators

Authors: Sebastián Castilla, Hitesh Agarwal, Ioannis Vangelidis, Yuliy Bludov, David Alcaraz Iranzo, Adrià Grabulosa, Matteo Ceccanti, Mikhail I. Vasilevskiy, Roshan Krishna Kumar, Eli Janzen, James H. Edgar, Kenji Watanabe, Takashi Taniguchi, Nuno M. R. Peres, Elefterios Lidorikis, Frank H. L. Koppens

Abstract: One of the most captivating properties of polaritons is their capacity to confine light at the nanoscale. This confinement is even more extreme in two-dimensional (2D) materials. 2D polaritons have been investigated by optical measurements using an external photodetector. However, their effective spectrally resolved electrical detection via far-field excitation remains unexplored. This fact hinder… ▽ More One of the most captivating properties of polaritons is their capacity to confine light at the nanoscale. This confinement is even more extreme in two-dimensional (2D) materials. 2D polaritons have been investigated by optical measurements using an external photodetector. However, their effective spectrally resolved electrical detection via far-field excitation remains unexplored. This fact hinders their potential exploitation in crucial applications such as sensing molecules and gases, hyperspectral imaging and optical spectrometry, banking on their potential for integration with silicon technologies. Herein, we present the first electrical spectroscopy of polaritonic nanoresonators based on a high-quality 2D-material heterostructure, which serves at the same time as the photodetector and the polaritonic platform. We employ metallic nanorods to create hybrid nanoresonators within the hybrid plasmon-phonon polaritonic medium in the mid and long-wave infrared ranges. Subsequently, we electrically detect these resonators by near-field coupling to a graphene pn-junction. The nanoresonators simultaneously present a record of lateral confinement and high-quality factors of up to 200, exhibiting prominent peaks in the photocurrent spectrum, particularly at the underexplored lower reststrahlen band of hBN. We exploit the geometrical and gate tunability of these nanoresonators to investigate their impact on the photocurrent spectrum and the polaritonic's waveguided modes. This work opens a venue for studying this highly tunable and complex hybrid system, as well as for using it in compact platforms for sensing and photodetection applications. △ Less

Submitted 27 September, 2024; originally announced September 2024.

Comments: 34 pages, 4 main figures and 22 supplementary figures

Journal ref: Nature Communications (2024)

I-centered vs F-centered orthorhombic symmetry and negative thermal expansion of the charge density wave of EuAl2Ga2

Authors: Harshit Agarwal, Surya Rohith Kotla, Leila Noohinejad, Biplab Bag, Claudio Eisele, Sitaram Ramakrishnan, Martin Tolkiehn, Carsten Paulmann, Arumugam Thamizhavel, Srinivasan Ramakrishnan, Sander van Smaalen

Abstract: Together with EuGa4 and EuAl4, EuAl2Ga2 belongs to the BaAl4 structure type with space group symmetry I4/mmm. EuAl2Ga2 develops an incommensurate charge density wave (CDW) at temperatures below TCDW = 51 K. On the basis of temperature dependent single-crystal X-ray diffraction (SXRD) data, the incommensurately modulated CDW crystal structure of EuAl2Ga2 is determined to possess orthorhombic supers… ▽ More Together with EuGa4 and EuAl4, EuAl2Ga2 belongs to the BaAl4 structure type with space group symmetry I4/mmm. EuAl2Ga2 develops an incommensurate charge density wave (CDW) at temperatures below TCDW = 51 K. On the basis of temperature dependent single-crystal X-ray diffraction (SXRD) data, the incommensurately modulated CDW crystal structure of EuAl2Ga2 is determined to possess orthorhombic superspace symmetry Immm(00g)s00. This symmetry is different from the orthorhombic Fmmm based symmetry of the CDW state of EuAl4. Nevertheless, both symmetries Immm(00g)s00 and Fmmm(00g)s00 lead to the same conclusion, that the CDW is supported by the layers of Al1 type atoms, while the Eu and Al2 or Ga atoms are not directly involved in CDW formation. The different symmetries of the CDW states of EuAl4 and EuAl2Ga2, as well as the observation of negative thermal expansion in the CDW state of EuAl2Ga2 might be explained by the effects of Ga substitution in the latter compound. △ Less

Submitted 24 August, 2024; originally announced August 2024.

Comments: 24 pages, 6 figures

Journal ref: Phys. Rev. B 111, 155144, 2025

Terahertz photocurrent probe of quantum geometry and interactions in magic-angle twisted bilayer graphene

Authors: Roshan Krishna Kumar, Geng Li, Riccardo Bertini, Swati Chaudhary, Krystian Nowakowski, Jeong Min Park, Sebastian Castilla, Zhen Zhan, Pierre A. Pantaleón, Hitesh Agarwal, Sergi Battle-Porro, Eike Icking, Matteo Ceccanti, Antoine Reserbat-Plantey, Giulia Piccinini, Julien Barrier, Ekaterina Khestanova, Takashi Taniguchi, Kenji Watanabe, Christoph Stampfer, Gil Refael, Francisco Guinea, Pablo Jarillo-Herrero, Justin C. W. Song, Petr Stepanov , et al. (2 additional authors not shown)

Abstract: Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompa… ▽ More Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompasses quantum "textures" of electron wavefunctions. Using terahertz light resonant with optical transitions of its flat bands, we observe bulk photocurrents driven by broken symmetries and reveal the interplay between electron interactions and quantum geometry. We observe inversion-breaking gapped states undetectable through quantum transport, sharp changes in the polarization axes caused by interaction-induced band renormalization, and recurring photocurrent patterns at integer fillings of the moiré unit cell that track the evolution of quantum geometry through the cascade of phase transitions. The large and tunable terahertz response intrinsic to flat-band systems offers direct insights into the quantum geometry of interacting electrons and paves the way for innovative terahertz quantum technologies. △ Less

Submitted 16 October, 2024; v1 submitted 24 June, 2024; originally announced June 2024.

Journal ref: Nature Materials (2025)

Superconducting magic-angle twisted trilayer graphene hosts competing magnetic order and moiré inhomogeneities

Authors: Ayshi Mukherjee, Surat Layek, Subhajit Sinha, Ritajit Kundu, Alisha H. Marchawala, Mahesh Hingankar, Joydip Sarkar, L. D. Varma Sangani, Heena Agarwal, Sanat Ghosh, Aya Batoul Tazi, Kenji Watanabe, Takashi Taniguchi, Abhay N. Pasupathy, Arijit Kundu, Mandar M. Deshmukh

Abstract: The microscopic mechanism of superconductivity in the magic-angle twisted graphene family, including magic-angle twisted trilayer graphene (MATTG), is poorly understood. Properties of MATTG, like Pauli limit violation, suggest unconventional superconductivity. Theoretical studies propose proximal magnetic states in the phase diagram, but direct experimental evidence is lacking. We show direct evid… ▽ More The microscopic mechanism of superconductivity in the magic-angle twisted graphene family, including magic-angle twisted trilayer graphene (MATTG), is poorly understood. Properties of MATTG, like Pauli limit violation, suggest unconventional superconductivity. Theoretical studies propose proximal magnetic states in the phase diagram, but direct experimental evidence is lacking. We show direct evidence for an in-plane magnetic order proximal to the superconducting state using two complementary electrical transport measurements. First, we probe the superconducting phase by using statistically significant switching events from superconducting to the dissipative state of MATTG. The system behaves like a network of Josephson junctions due to lattice relaxation-induced moiré inhomogeneity in the system. We observe non-monotonic and hysteretic responses in the switching distributions as a function of temperature and in-plane magnetic field. Second, in normal regions doped slightly away from the superconducting regime, we observe hysteresis in magnetoresistance with an in-plane magnetic field; showing evidence for in-plane magnetic order that vanishes $\sim$900 mK. Additionally, we show a broadened Berezinskii-Kosterlitz-Thouless transition due to relaxation-induced moiré inhomogeneity. We find superfluid stiffness $J_{\mathrm{s}}$$\sim$0.15 K with strong temperature dependence. Theoretically, the magnetic and superconducting order arising from the magnetic order's fluctuations have been proposed - we show direct evidence for both. Our observation that the hysteretic magnetoresistance is sensitive to the in-plane field may constrain possible intervalley-coherent magnetic orders and the resulting superconductivity that arises from its fluctuations. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Comments: 22 pages, 8 figures, and supplementary information

Infrared Spectroscopy for Diagnosing Superlattice Minibands in Magic-angle Twisted Bilayer Graphene

Authors: Geng Li, Roshan Krishna Kumar, Petr Stepanov, Pierre A. Pantaleón, Zhen Zhan, Hitesh Agarwal, Adrien Bercher, Julien Barrier, Kenji Watanabe, Takashi Taniguchi, Alexey B. Kuzmenko, Francisco Guinea, Iacopo Torre, Frank H. L. Koppens

Abstract: Twisted bilayer graphene (TBG) represents a highly tunable, strongly correlated electron system owed to its unique flat electronic bands. However, understanding the single-particle band structure alone has been challenging due to complex lattice reconstruction effects and a lack of spectroscopic measurements over a broad energy range. Here, we probe the band structure of TBG around the magic angle… ▽ More Twisted bilayer graphene (TBG) represents a highly tunable, strongly correlated electron system owed to its unique flat electronic bands. However, understanding the single-particle band structure alone has been challenging due to complex lattice reconstruction effects and a lack of spectroscopic measurements over a broad energy range. Here, we probe the band structure of TBG around the magic angle using infrared spectroscopy. Our measurements reveal spectral features originating from interband transitions whose energies are uniquely defined by the twist angle. By combining with quantum transport, we connect spectral features over a broad energy range (10 to 700 meV) spanning several superlattice minibands and track their evolution with twist angle. We compare our data with calculations of the band structures obtained via the continuum model and find good agreement only when considering a variation of interlayer/intralayer tunnelling parameters with the twist angle. Our analysis suggests that the magic angle also shifts due to lattice relaxation, and is better defined for a wide angular range from 0.9° to 1.1°. Our work provides spectroscopic insights into TBG's band structure and offers an optical fingerprint of the magic angle for screening heterostructures before nanofabrication. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Charge density wave without long-range structural modulation in canted antiferromagnetic kagome FeGe

Authors: Chenfei Shi, Hanbin Deng, Surya Rohith Kotla, Yi Liu, Sitaram Ramakrishnan, Claudio Eisele, Harshit Agarwal, Leila Noohinejad, Ji-Yong Liu, Tianyu Yang, Guowei Liu, Bishal Baran Maity, Qi Wang, Zhaodi Lin, Baojuan Kang, Wanting Yang, Yongchang Li, Zhihua Yang, Yuke Li, Yanpeng Qi, Arumugam Thamizhavel, Wei Ren, Guang-Han Cao, Jia-Xin Yin, Sander van Smaalen , et al. (2 additional authors not shown)

Abstract: Strongly correlated electron systems with a kagome lattice can host abundant exotic quantum states such as superconductivity and spin/charge density waves (CDW) due to the complicated interactions between different degrees of freedoms in the framework of a unique two-dimensional geometrically frustrated lattice structure. Recently, successive orders of A-type antiferromagnetism (AFM),… ▽ More Strongly correlated electron systems with a kagome lattice can host abundant exotic quantum states such as superconductivity and spin/charge density waves (CDW) due to the complicated interactions between different degrees of freedoms in the framework of a unique two-dimensional geometrically frustrated lattice structure. Recently, successive orders of A-type antiferromagnetism (AFM), $2\times2\times2$ CDW and canted double-cone AFM have been manifested upon cooling in magnetic kagome FeGe. However, the mechanism of the CDW order and its interaction with magnetism are presently enigmatic at best. Here we investigate the evolution of CDW order with temperature across the spin canting transition in FeGe by single-crystal x-ray diffraction. Refinements of its modulated structure are presented using the superspace approach. Interestingly, the superlattice reflections originating from CDW-induced long-range structural modulation become extremely weak after the system enters the canted AFM while a $2\times2$ CDW in the $ab$ plane persists as a long-range order demonstrated by strong electronic modulation in the d$I$/d$V$ map of scanning tunneling spectroscopy. We discovered a novel CDW order without long-range structural modulation in FeGe probably because of the competition between CDW and canted AFM in determining the underlying crystal structure. In addition, occupational modulations of Ge1 atoms located in the kagome plane and displacive modulations of all the atoms were extracted from the refinements, confirming the existence of Ge atom dimerization along the $c$ axis as the major distortion and indicating a dynamic transformation between different CDW domains. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Comments: 22 pages, 6 figures. Comments on the manuscript are welcome

Room temperature charge density wave in a tetragonal polymorph of Gd2Os3Si5 and study of its origin in the RE2T3X5 (RE = Rare earth, T = transition metal, X = Si, Ge) series

Authors: Vikash Sharma, Sitaram Ramakrishnan, S. S. Jayakrishnan, Surya Rohith Kotla, Bishal Maiti, Claudio Eisele, Harshit Agarwal, Leila Noohinejad, M. Tolkiehn, Dipanshu Bansal, Sander van Smaalen, Arumugam Thamizhavel

Abstract: Charge density wave (CDW) systems are proposed to exhibit application potential for electronic and optoelectronic devices. Therefore, identifying new materials that exhibit a CDW state at room temperature is crucial for the development of CDW-based devices. Here, we present a non-layered tetragonal polymorph of Gd2Os3Si5, which exhibits a CDW state at room temperature. Gd2Os3Si5 crystallizes in th… ▽ More Charge density wave (CDW) systems are proposed to exhibit application potential for electronic and optoelectronic devices. Therefore, identifying new materials that exhibit a CDW state at room temperature is crucial for the development of CDW-based devices. Here, we present a non-layered tetragonal polymorph of Gd2Os3Si5, which exhibits a CDW state at room temperature. Gd2Os3Si5 crystallizes in the U2Mn3Si5-type tetragonal crystal structure with the space group P4/mnc. Single-crystal x-ray diffraction (SXRD) analysis shows that Gd2Os3Si5 possesses an incommensurately modulated structure with modulation wave vector q = (0.53, 0, 0), while the modulation reduces the symmetry to orthorhombic Cccm(σ00)0s0. This differs in contrast to isostructural Sm2Ru3Ge5, where the modulated phase has been reported to possess the superspace symmetry Pm(α 0 γ)0. However, reinvestigation of Sm2Ru3Ge5 suggests that its modulated crystal structure can alternatively be described by Cccm(σ00)0s0, with modulations similar to Gd2Os3Si5. The magnetic susceptibility, \c{hi}(T), exhibits a maximum at low temperatures that indicates an antiferromagnetic transition at TN = 5.5 K. The \c{hi}(T) furthermore shows an anomaly at around 345 K, suggesting a CDW transition at TCDW = 345 K, that corroborates the result from high-temperature SXRD measurements. Interestingly, R2T3X5 compounds are known to crystallize either in the tetragonal Sc2Fe3Si5 type structure or in the orthorhombic U2Co3Si5 structure type. Not all of the compounds in the R2T3X5 series undergo CDW phase transitions. We find that R2T3X5 compounds will exhibit a CDW transition, if the condition : 0.526 < c/sqrt(ab) < 0.543 is satisfied. We suggest the wave vector-dependent electron-phonon coupling to be the dominant mechanism of CDW formation in the tetragonal polymorph of Gd2Os3Si5. △ Less

Submitted 14 June, 2024; v1 submitted 13 March, 2024; originally announced March 2024.

Non-centrosymmetric, transverse structural modulation in SrAl4, and elucidation of its origin in the BaAl4 family of compounds

Authors: Sitaram Ramakrishnan, Surya Rohith Kotla, Hanqi Pi, Bishal Baran Maity, Jia Chen, Jin-Ke Bao, Zhaopeng Guo, Masaki Kado, Harshit Agarwal, Claudio Eisele, Minoru Nohara, Leila Noohinejad, Hongming Weng, Srinivasan Ramakrishnan, Arumugam Thamizhavel, Sander van Smaalen

Abstract: At ambient conditions SrAl4 adopts the BaAl4 structure type with space group I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 243 K, followed by a structural transition at TS = 87 K. Temperature-dependent single-crystal X-ray diffraction (SXRD) leads to the observation of incommensurate superlattice reflections at q = σc* with σ= 0.1116 at 200 K. The CDW has orthorhombic symme… ▽ More At ambient conditions SrAl4 adopts the BaAl4 structure type with space group I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 243 K, followed by a structural transition at TS = 87 K. Temperature-dependent single-crystal X-ray diffraction (SXRD) leads to the observation of incommensurate superlattice reflections at q = σc* with σ= 0.1116 at 200 K. The CDW has orthorhombic symmetry with the acentric superspace group F222(00sigma)00s, where F222 is a subgroup of Fmmm as well as of I4/mmm. Atomic displacements mainly represent a transverse wave, with displacements that are 90 deg out of phase between the two diagonal directions of the I-centered unit cell, resulting in a helical wave. Small longitudinal displacements are provided by the second harmonic modulation. The orthorhombic phase realized in SrAl4 is similar to that found in EuAl4. Electronic structure calculations and phonon calculations by density functional theory (DFT) have failed to reveal the mechanism of CDW formation. However, DFT reveals that Al atoms dominate the density of states near the Fermi level, thus, corroborating the SXRD measurements. SrAl4 remains incommensurately modulated at the structural transition, where the symmetry lowers from orthorhombic to b-unique monoclinic. We have identified a simple criterion, that correlates the presence of a phase transition with the interatomic distances. Only those compounds XAl4-xGax(X = Ba, Eu, Sr, Ca; 0 < x <4) undergo phase transitions, for which the ratio c/a falls within the narrow range 2.51 < c/a < 2.54. △ Less

Submitted 16 March, 2024; v1 submitted 16 September, 2023; originally announced September 2023.

Journal ref: Physical Review Research 2024

Giant ultra-broadband photoconductivity in twisted graphene heterostructures

Authors: Hitesh Agarwal, Krystian Nowakowski, Andres Forrer, Alessandro Principi, Riccardo Bertini, Sergi Batlle-Porro, Antoine Reserbat-Plantey, Parmeshwar Prasad, Lorenzo Vistoli, Kenji Watanabe, Takashi Taniguchi, Adrian Bachtold, Giacomo Scalari, Roshan Krishna Kumar, Frank H. L. Koppens

Abstract: The requirements for broadband photodetection are becoming exceedingly demanding in hyperspectral imaging. Whilst intrinsic photoconductor arrays based on mercury cadmium telluride represent the most sensitive and suitable technology, their optical spectrum imposes a narrow spectral range with a sharp absorption edge that cuts their operation to < 25 um. Here, we demonstrate a giant ultra-broadban… ▽ More The requirements for broadband photodetection are becoming exceedingly demanding in hyperspectral imaging. Whilst intrinsic photoconductor arrays based on mercury cadmium telluride represent the most sensitive and suitable technology, their optical spectrum imposes a narrow spectral range with a sharp absorption edge that cuts their operation to < 25 um. Here, we demonstrate a giant ultra-broadband photoconductivity in twisted double bilayer graphene heterostructures spanning a spectral range of 2 - 100 um with internal quantum efficiencies ~ 40 % at speeds of 100 kHz. The giant response originates from unique properties of twist-decoupled heterostructures including pristine, crystal field induced terahertz band gaps, parallel photoactive channels, and strong photoconductivity enhancements caused by interlayer screening of electronic interactions by respective layers acting as sub-atomic spaced proximity screening gates. Our work demonstrates a rare instance of an intrinsic infrared-terahertz photoconductor that is complementary metal-oxide-semiconductor compatible and array integratable, and introduces twist-decoupled graphene heterostructures as a viable route for engineering gapped graphene photodetectors with 3D scalability. △ Less

Submitted 4 September, 2023; originally announced September 2023.

Report number: 17, 1047-1053

Journal ref: Nature Photonics 2023

Annealing-induced long-range charge density wave order in magnetic kagome FeGe: fluctuations and disordered structure

Authors: Chenfei Shi, Yi Liu, Bishal Baran Maity, Qi Wang, Surya Rohith Kotla, Sitaram Ramakrishnan, Claudio Eisele, Harshit Agarwal, Leila Noohinejad, Qian Tao, Baojuan Kang, Zhefeng Lou, Xiaohui Yang, Yanpeng Qi, Xiao Lin, Zhu-An Xu, A. Thamizhavel, Guang-Han Cao, Sander van Smaalen, Shixun Cao, Jin-Ke Bao

Abstract: Charge density wave (CDW) in kagome materials with the geometric frustration is able to carry unconventional characteristics. Recently, a CDW has been observed below the antiferromagnetic order in kagome FeGe, in which magnetism and CDW are intertwined to form an emergent quantum ground state. However, the CDW is only short-ranged and the structural modulation originating from it has yet to be det… ▽ More Charge density wave (CDW) in kagome materials with the geometric frustration is able to carry unconventional characteristics. Recently, a CDW has been observed below the antiferromagnetic order in kagome FeGe, in which magnetism and CDW are intertwined to form an emergent quantum ground state. However, the CDW is only short-ranged and the structural modulation originating from it has yet to be determined experimentally. Here we realize a long-range CDW order by post-annealing process, and resolve the structure model through single crystal x-ray diffraction. Occupational disorder of Ge resulting from short-range CDW correlations above $T_\mathrm{CDW}$ is identified from structure refinements. The partial dimerization of Ge along the $c$ axis is unveiled to be the dominant distortion for the CDW. Occupational disorder of Ge is also proved to exist in the CDW phase due to the random selection of partially dimerized Ge sites. Our work provides useful insights for understanding the unconventional nature of the CDW in FeGe. △ Less

Submitted 23 July, 2024; v1 submitted 17 August, 2023; originally announced August 2023.

Comments: 4 figures and 1 table in the main text. Supplementary materials included. To be published in SCIENCE CHINA Physics, Mechanics & Astronomy (SCPMA)

Journal ref: Sci. China Phys. Mech. Astron. 67, 117012 (2024)

Ultraconfined plasmons in atomically thin crystalline silver nanostructures

Authors: Vahagn Mkhitaryan, Andrew P. Weber, Saad Abdullah, Laura Fernández, Zakaria M. Abd El-Fattah, Ignacio Piquero-Zulaica, Hitesh Agarwal, Kevin García Díez, 3 Frederik Schiller, J. Enrique Ortega, F. Javier García de Abajo

Abstract: The ability to confine light down to atomic scales is critical for the development of applications in optoelectronics and optical sensing as well as for the exploration of nanoscale quantum phenomena. Plasmons in metallic nanostructures can achieve this type of confinement, although fabrication imperfections down to the subnanometer scale hinder actual developments. Here, we demonstrate narrow pla… ▽ More The ability to confine light down to atomic scales is critical for the development of applications in optoelectronics and optical sensing as well as for the exploration of nanoscale quantum phenomena. Plasmons in metallic nanostructures can achieve this type of confinement, although fabrication imperfections down to the subnanometer scale hinder actual developments. Here, we demonstrate narrow plasmons in atomically thin crystalline silver nanostructures fabricated by prepatterning silicon substrates and epitaxially depositing silver films of just a few atomic layers in thickness. Combined with on-demand lateral shaping, this procedure allows for an unprecedented control over optical field confinement in the near-infrared spectral region. Specifically, we observe fundamental and higher-order plasmons featuring extreme spatial confinement and high-quality factors that reflect the crystallinity of the metal. Our approach holds potential for the design and exploitation of atomic-scale nanoplasmonic devices in optoelectronics, sensing, and quantum-physics applications. △ Less

Submitted 20 March, 2023; originally announced March 2023.

Comments: 11 pages, 9 figures, 50 references

Cryogenic nano-imaging of second-order moiré superlattices

Authors: Niels C. H. Hesp, Sergi Batlle-Porro, Roshan Krishna Kumar, Hitesh Agarwal, David Barcons-Ruiz, Hanan Herzig Sheinfux, Kenji Watanabe, Takashi Taniguchi, Petr Stepanov, Frank H. L. Koppens

Abstract: Second-order superlattices form when moiré superlattices of similar periodicities interfere with each other, leading to even larger superlattice periodicities. These crystalline structures have been engineered utilizing two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) under specific alignment conditions. Such specific alignment has shown to play a crucial role in f… ▽ More Second-order superlattices form when moiré superlattices of similar periodicities interfere with each other, leading to even larger superlattice periodicities. These crystalline structures have been engineered utilizing two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) under specific alignment conditions. Such specific alignment has shown to play a crucial role in facilitating correlation-driven topological phases featuring the quantized anomalous Hall effect. While signatures of second-order superlattices have been identified in magnetotransport experiments, any real-space visualization is lacking to date. In this work, we present \NT{electronic transport measurements and cryogenic nanoscale photovoltage (PV) measurements} that reveal a second-order superlattice in magic-angle twisted bilayer graphene closely aligned to hBN. This is evidenced by long-range periodic photovoltage modulations across the entire sample backed by the corresponding electronic transport features. Supported by theoretical calculations, our experimental data show that even minuscule strain and twist-angle variations on the order of 0.01$^\circ$ can lead to a drastic change of the second-order superlattice structure between local one-dimensional, square or triangular types. Our real-space observations therefore serve as a strong `magnifying glass' for strain and twist angle and can shed new light on the mechanisms responsible for the breaking of spatial symmetries in twisted bilayer graphene, and pave an avenue to engineer long-range superlattice structures in 2D materials using strain fields. △ Less

Submitted 16 July, 2024; v1 submitted 10 February, 2023; originally announced February 2023.

Comments: 10 pages, 5 figures

Structural correlation to enhanced magnetodielectric properties of Pr-doped polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ at low temperatures

Authors: Pooja Pant, Harshit Agarwal, Suresh Bharadwaj, Archana Sagdeo, M. A. Shaz

Abstract: The effect of improved dielectric properties in the presence of an applied magnetic field is discussed in Pr doped polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ complemented by the structural properties down to 50 K and magnetic properties. Enhanced dielectric permittivity and low dielectric loss represent the strongly field-dependent dielectric behaviour of the sample. The structural characteriza… ▽ More The effect of improved dielectric properties in the presence of an applied magnetic field is discussed in Pr doped polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ complemented by the structural properties down to 50 K and magnetic properties. Enhanced dielectric permittivity and low dielectric loss represent the strongly field-dependent dielectric behaviour of the sample. The structural characterizations using synchrotron angle dispersive X-ray diffraction confirm the orthorhombic symmetry of the polycrystalline sample with the Pnma space group from 300 K to 50 K. There is no structural transition at lower temperatures up to 50 K; however the Mn O octahedral distortion is reduced. The investigation of dielectric properties for frequencies range 500 Hz to 1 MHz was conducted in the temperature range 8 K to 300 K with and without a magnetic field of 7 Tesla, which shows the high dielectric constant in the 500 Hz frequency region. This confirms the relaxation phenomena in polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$. ac conductivity data shows the increasing trend for frequencies along with the activation energy which increases from low frequencies to higher frequencies. Temperature-dependent dc magnetization study shows the negative magnetization in polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ at low temperature at 100 Oe applied field, due to spin canting of Mn-Mn magnetic lattice. High coercivity due to competition in between spin ordering of Mn and Gd,Pr magnetic lattice at 5 K are also observed in the field-dependent magnetization study. △ Less

Submitted 13 September, 2022; originally announced September 2022.

Comments: 33 pages, 9 figures, 3 tables

Engineering high quality graphene superlattices via ion milled ultra-thin etching masks

Authors: David Barcons Ruiz, Hanan Herzig Sheinfux, Rebecca Hoffmann, Iacopo Torre, Hitesh Agarwal, Roshan Krishna Kumar, Lorenzo Vistoli, Takashi Taniguchi, Kenji Watanabe, Adrian Bachtold, Frank H. L. Koppens

Abstract: Nanofabrication research pursues the miniaturization of patterned feature size. In the current state of the art, micron scale areas can be patterned with features down to ~ 30 nm pitch using electron beam lithography. Our work demonstrates a new nanofabrication technique which allows patterning periodic structures with a pitch down to 16 nm. It is based on focused ion beam milling of suspended mem… ▽ More Nanofabrication research pursues the miniaturization of patterned feature size. In the current state of the art, micron scale areas can be patterned with features down to ~ 30 nm pitch using electron beam lithography. Our work demonstrates a new nanofabrication technique which allows patterning periodic structures with a pitch down to 16 nm. It is based on focused ion beam milling of suspended membranes, with minimal proximity effects typical to electron beam lithography. The membranes are then transferred and used as hard etching masks. We benchmark our technique by engineering a superlattice potential in single layer graphene using a thin graphite patterned gate electrode. Our electronic transport characterization shows high quality superlattice properties and a rich Hofstadter butterfly spectrum. Our technique opens the path towards the realization of very short period superlattices in 2D materials, comparable to those in natural moire systems, but with the ability to control lattice symmetries and strength. This can pave the way for a versatile solid-state quantum simulator platform and the study of correlated electron phases. △ Less

Submitted 2 February, 2023; v1 submitted 28 July, 2022; originally announced July 2022.

Evolution from sinusoidal to collinear A-type antiferromagnetic spin-ordered magnetic phase transition in Tb0.6Pr0.4MnO3

Authors: Harshit Agarwal, Jose A Alonso, Ángel Muñoz, R J Choudhary, O N Srivastava, M A Shaz

Abstract: The present study reports on the structural and magnetic phase transitions in Pr-doped polycrystalline Tb0.6Pr0.4MnO3, using high-resolution neutron powder diffraction (NPD) collected at SINQ spallation source (PSI), to emphasize the suppression of the sinusoidal magnetic structure of pure TbMnO3 and the evolution to a collinear A-type antiferromagnetic ordering. The phase purity, Jahn-Teller dist… ▽ More The present study reports on the structural and magnetic phase transitions in Pr-doped polycrystalline Tb0.6Pr0.4MnO3, using high-resolution neutron powder diffraction (NPD) collected at SINQ spallation source (PSI), to emphasize the suppression of the sinusoidal magnetic structure of pure TbMnO3 and the evolution to a collinear A-type antiferromagnetic ordering. The phase purity, Jahn-Teller distortion, and one-electron bandwidth for eg orbital of Mn3+ cation have been calculated for polycrystalline Tb0.6Pr0.4MnO3, in comparison to the parent materials TbMnO3 and PrMnO3, through the Rietveld refinement study from X-ray diffraction data at room temperature. The temperature-dependent zero field-cooled and field-cooled dc magnetization study at low temperature down to 5 K reveals a variation in the magnetic phase transition due to the effect of Pr3+ substitution at the Tb3+ site, which gives the signature of the antiferromagnetic nature of the sample, with a weak ferromagnetic component at low temperature induced by an external magnetic field. The field-dependent magnetization study at low temperatures gives the weak coercivity having the order of 2 kOe, which is expected due to canted-spin arrangement or ferromagnetic nature of Terbium ordering. The NPD data for Tb0.6Pr0.4MnO3 confirms that the nuclear structure of the synthesized sample maintains its orthorhombic symmetry down to 1.5 K. Also, the magnetic structures have been solved at 50 K, 25 K, and 1.5 K through the NPD study, which shows A-type antiferromagnetic spin arrangement. △ Less

Submitted 8 February, 2021; v1 submitted 25 November, 2020; originally announced November 2020.

Comments: 21 Pages, 8 Figures, 7 Tables

Landau level diagram and the continuous rotational symmetry breaking in trilayer graphene

Authors: Biswajit Datta, Hitesh Agarwal, Abhisek Samanta, Amulya Ratnakar, Kenji Watanabe, Takashi Taniguchi, Rajdeep Sensarma, Mandar M. Deshmukh

Abstract: The sequence of the zeroth Landau levels (LLs) between filling factors $ν$=-6 to 6 in ABA-stacked trilayer graphene (TLG) is unknown because it depends sensitively on the non-uniform charge distribution on the three layers of ABA-stacked TLG. Using the sensitivity of quantum Hall data on the electric field and magnetic field, in an ultraclean ABA-stacked TLG sample, we quantitatively estimate the… ▽ More The sequence of the zeroth Landau levels (LLs) between filling factors $ν$=-6 to 6 in ABA-stacked trilayer graphene (TLG) is unknown because it depends sensitively on the non-uniform charge distribution on the three layers of ABA-stacked TLG. Using the sensitivity of quantum Hall data on the electric field and magnetic field, in an ultraclean ABA-stacked TLG sample, we quantitatively estimate the non-uniformity of the electric field and determine the sequence of the zeroth LLs. We also observe anticrossings between some LLs differing by 3 in LL index, which result from the breaking of the continuous rotational to \textit{C}$_3$ symmetry by the trigonal warping. △ Less

Submitted 1 August, 2018; v1 submitted 15 February, 2018; originally announced February 2018.

Comments: 35 pages, 18 figures

Journal ref: Phys. Rev. Lett. 121, 056801 (2018)

Single spin universal Boolean logic

Authors: H. Agarwal, S. Pramanik, S. Bandyopadhyay

Abstract: Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear array of three quantum dots, each containing a single spin polarized electron, and with nearest neighbor exchange coupling, acts as the universal NAND gate.… ▽ More Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear array of three quantum dots, each containing a single spin polarized electron, and with nearest neighbor exchange coupling, acts as the universal NAND gate. The energy dissipated during switching this gate is the Landauer-Shannon limit of kTln(1/p) [T = ambient temperature and p = intrinsic gate error probability]. With present day technology, p = 1E-9 is achievable above 1 K temperature. Even with this small intrinsic error probability, the energy dissipated during switching the NAND gate is only ~ 21 kT, while today's nanoscale transistors dissipate about 40,000 - 50,000 kT when they switch. △ Less

Submitted 25 January, 2008; originally announced January 2008.

Journal ref: New Journal of Physics, 10 (2008) 015001 [Focus Issue]