Showing 1–50 of 153 results for author: Agarwal, A

Detecting Lifshitz Transitions Using Nonlinear Conductivity in Bilayer Graphene

Authors: Tanweer Ahmed, Harsh Varshney, Bao Q. Tu, Kenji Watanabe, Takashi Taniguchi, Marco Gobbi, Fèlix Casanova, Amit Agarwal, Luis E. Hueso

Abstract: The second-order nonlinear electrical response (NLER) is an intrinsic property of inversion symmetry-broken systems which can provide deep insights into the electronic band structures of atomically thin quantum materials. However, the impact of Fermi surface reconstructions, also known as Lifshitz transitions, on the NLER has remained elusive. We investigated NLER in bilayer graphene (BLG), where… ▽ More The second-order nonlinear electrical response (NLER) is an intrinsic property of inversion symmetry-broken systems which can provide deep insights into the electronic band structures of atomically thin quantum materials. However, the impact of Fermi surface reconstructions, also known as Lifshitz transitions, on the NLER has remained elusive. We investigated NLER in bilayer graphene (BLG), where the low-energy bands undergo Lifshitz transitions. Here, NLER undergoes a sign change near the Lifshitz transitions even at elevated temperatures $T\gtrsim10~$K. At the band edge, NLER in BLG is modulated by both extrinsic scattering and interfacial-strain-induced intrinsic Berry curvature dipole, both of which can be finely tuned externally by varying doping and interlayer potential. Away from the band edge, BLG exhibits second-order conductivity exceeding $30~μ$mV$^{-1}Ω^{-1}$ at 3K higher than any previous report. Our work establishes NLER as a reliable tool to probe Lifshitz transitions in quantum materials. △ Less

Submitted 8 July, 2025; originally announced July 2025.

Comments: This is the pre-peer reviewed version of the following article: Ahmed, T. et al., Small 2025, 21 (21), 2501426, which has been published in final form at https://doi.org/10.1002/smll.202501426. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions

Journal ref: Small 2025, 21 (21), 2501426

Spin-split magnon bands induce pure spin current in insulating altermagnets

Authors: Sankar Sarkar, Amit Agarwal

Abstract: Altermagnets offer a promising platform for dissipationless spin transport by combining zero net magnetization with spontaneous non-relativistic spin splitting. However, their magnonic transport properties remain largely unexplored. Here, we develop a quantum-kinetic theory for thermally driven magnon currents that cleanly separates Berry-curvature-driven intrinsic contributions from Drude-like sc… ▽ More Altermagnets offer a promising platform for dissipationless spin transport by combining zero net magnetization with spontaneous non-relativistic spin splitting. However, their magnonic transport properties remain largely unexplored. Here, we develop a quantum-kinetic theory for thermally driven magnon currents that cleanly separates Berry-curvature-driven intrinsic contributions from Drude-like scattering-dependent terms. Applying this framework to a collinear honeycomb antiferromagnet with anisotropic next-nearest-neighbor exchange and Dzyaloshinskii-Moriya interaction, we reveal spin-split magnon bands that support both intrinsic and extrinsic spin Nernst and Seebeck currents. For realistic parameters, we predict a sizable magnon spin-splitting angle (about 3.3 degrees) and a pure transverse spin current capable of exerting a strong spin-splitter torque suitable for magnetization switching. △ Less

Submitted 6 July, 2025; originally announced July 2025.

Comments: 14 pages and 4 figures. We invite comments and feedback

Nonlinear bulk photocurrent probe Z2 topological phase transition

Authors: Debasis Dutta, Raihan Ahammed, Yingdong Wei, Xiaokai Pan, Xiaoshuang Chen, Lin Wang, Amit Agarwal

Abstract: Detecting topological phase transitions in bulk is challenging due to the limitations of surface sensitive probes like ARPES. Here, we demonstrate that nonlinear bulk photocurrents, specifically shift and injection currents, serve as effective probes of Z_2 topological transitions. These photocurrents show a robust polarity reversal across the Z_2 phase transition, offering a direct optical signat… ▽ More Detecting topological phase transitions in bulk is challenging due to the limitations of surface sensitive probes like ARPES. Here, we demonstrate that nonlinear bulk photocurrents, specifically shift and injection currents, serve as effective probes of Z_2 topological transitions. These photocurrents show a robust polarity reversal across the Z_2 phase transition, offering a direct optical signature that distinguishes strong topological phases from weak or trivial ones. This effect originates from a reorganization of key band geometric quantities, the Berry curvature and shift vector, on time-reversal-invariant momentum planes. Using a low energy Dirac model, we trace this behaviour to a band inversion in the time-reversal-invariant momentum plane that drives the topological transition. We validate these findings through tight-binding model for Bi_2Te_3 and first-principles calculations for ZrTe_5 and BiTeI, where the topological phase can be tuned by pressure or temperature. Our results establish nonlinear photocurrent as a sensitive and broadly applicable probe of Z_2 topological phase transitions. △ Less

Submitted 16 June, 2025; originally announced June 2025.

Comments: 9 pages, 6 figures, 61 references. We will appreciate any comments of suggestions on this work

Congestion and extreme events in urban street networks

Authors: Ajay Agarwal, M. S. Santhanam

Abstract: Congestion and extreme events in transportation networks are emergent phenomena with significant socio-economic implications. In this work, we study congestion and extreme event properties on real urban street (planar) networks drawn from four cities and compare it with that on a regular square grid. For dynamics, we employ three variants of random walk with additional realistic transport features… ▽ More Congestion and extreme events in transportation networks are emergent phenomena with significant socio-economic implications. In this work, we study congestion and extreme event properties on real urban street (planar) networks drawn from four cities and compare it with that on a regular square grid. For dynamics, we employ three variants of random walk with additional realistic transport features. In all the four urban street networks and 2D square grid and with all dynamical models, phase transitions are observed from a free flow to congested phase as a function of birth rate of vehicles. These transitions can be modified by traffic-aware routing protocols, but congestion cannot be entirely mitigated. In organically evolved street networks, we observe a semi-congested regime which has both congested and free-flow components. In the free-flow regime, the extreme event occurrence probability is larger for small degree nodes than for hubs, a feature originally observed in non-planar scale-free networks. In general, with respect to congestion and extreme events, the urban street networks and regular square grid display similar properties. △ Less

Submitted 21 May, 2025; originally announced May 2025.

Comments: 8 pages, 9 figures

Planar Nernst effect from hidden band geometry in layered two-dimensional materials

Authors: Rahul Biswas, Harsh Varshney, Amit Agarwal

Abstract: The Nernst effect is a versatile phenomenon relevant for energy harvesting, magnetic sensing, probing band topology and charge-neutral excitations. The planar Nernst effect (PNE) generates an in-plane voltage transverse to an applied temperature gradient under an in-plane magnetic field. Conventional Berry curvature-induced PNE is absent in two-dimensional (2D) systems, as the out-of-plane Berry c… ▽ More The Nernst effect is a versatile phenomenon relevant for energy harvesting, magnetic sensing, probing band topology and charge-neutral excitations. The planar Nernst effect (PNE) generates an in-plane voltage transverse to an applied temperature gradient under an in-plane magnetic field. Conventional Berry curvature-induced PNE is absent in two-dimensional (2D) systems, as the out-of-plane Berry curvature does not couple to the in-plane electron velocity. We challenge this notion by demonstrating a distinct planar Nernst effect in quasi-2D materials (2DPNE). We show that the 2DPNE originates from previously overlooked planar components of Berry curvature and orbital magnetic moment, arising from inter-layer tunneling in multilayered 2D systems. We comprehensively analyze the band-geometric origin and crystalline symmetry constraints on 2DPNE responses. We illustrate its experimental feasibility in strained bilayer graphene. Our findings significantly expand the theoretical understanding of planar Nernst effects, providing a clear pathway for next-generation magnetic sensing and energy-harvesting applications. △ Less

Submitted 1 May, 2025; v1 submitted 26 April, 2025; originally announced April 2025.

Comments: 12 pages, 5 figures

Layered Topological Antiferromagnetic Metal at Room Temperature -- YbMn$_2$Ge$_2$

Authors: Nirmalya Jana, Atasi Chakraborty, Anamitra Mukherjee, Amit Agarwal

Abstract: Metallic antiferromagnets are essential for efficient spintronic applications due to their fast switching and high mobility, yet room-temperature metallic antiferromagnets are rare. Here, we investigate YbMn$_2$Ge$_2$, a room temperature antiferromagnet, and establish it as an exfoliable layered metal with altermagnetic surface states. Using multi-orbital Hubbard model calculations, we reveal that… ▽ More Metallic antiferromagnets are essential for efficient spintronic applications due to their fast switching and high mobility, yet room-temperature metallic antiferromagnets are rare. Here, we investigate YbMn$_2$Ge$_2$, a room temperature antiferromagnet, and establish it as an exfoliable layered metal with altermagnetic surface states. Using multi-orbital Hubbard model calculations, we reveal that its robust metallic AFM ordering is stabilized by electronic correlations and a partially nested Fermi surface. Furthermore, we show that YbMn$_2$Ge$_2$ hosts symmetry-protected topological Dirac crossings, connecting unique even-order spin-polarized surface states with parabolic and inverted Mexican-hat-like dispersion. Our findings position YbMn$_2$Ge$_2$ as a promising platform for exploring the interplay of correlation, topology, and surface altermagnetism of layered antiferromagnets. △ Less

Submitted 10 March, 2025; originally announced March 2025.

Comments: 9 pages and 4 figures

Field-driven band asymmetry and non-reciprocal transport in a helimagnet

Authors: Darius-Alexandru Deaconu, Aneesh Agarwal, Rodion Vladimirovich Belosludov, Robert-Jan Slager, Mohammad Saeed Bahramy

Abstract: Helimagnets exhibit noncollinear spin arrangements characterized by a periodic helical modulation, giving rise to emergent chiral properties. These materials have attracted significant interest due to their potential applications in spintronics, particularly for robust information storage and the realization of topological spin textures such as skyrmions. In this work, we focus on Yoshimori-type h… ▽ More Helimagnets exhibit noncollinear spin arrangements characterized by a periodic helical modulation, giving rise to emergent chiral properties. These materials have attracted significant interest due to their potential applications in spintronics, particularly for robust information storage and the realization of topological spin textures such as skyrmions. In this work, we focus on Yoshimori-type helimagnets, where competing exchange interactions mediated by conduction electrons stabilize helical spin structures without requiring Dzyaloshinskii-Moriya interaction. We introduce a minimal model describing the electronic structure of a one-dimensional helimagnet in the presence of an external magnetic field and investigate its impact on non-reciprocal transport. We demonstrate how band asymmetry emerges in the conical phase induced by the external field, leading to a nonzero second-order electronic conductivity and injection photoconductivity. Our results provide insight into the interplay between the real space magnetic texture and electronic properties, paving the way for future studies on chirality-driven transport phenomena in centrosymmetric helimagnets. △ Less

Submitted 1 March, 2025; originally announced March 2025.

Comments: 4 figures, Supplementary Material included

Quantum geometric moment encodes stacking order of moiré matter

Authors: Surat Layek, Subhajit Sinha, Atasi Chakraborty, Ayshi Mukherjee, Heena Agarwal, Kenji Watanabe, Takashi Taniguchi, Amit Agarwal, Mandar M. Deshmukh

Abstract: Exploring the topological characteristics of electronic bands is essential in condensed matter physics. Moiré materials featuring flat bands provide a versatile platform for engineering band topology and correlation effects. In moiré materials that break either time-reversal symmetry or inversion symmetry or both, electronic bands exhibit Berry curvature hotspots. Different stacking orders in thes… ▽ More Exploring the topological characteristics of electronic bands is essential in condensed matter physics. Moiré materials featuring flat bands provide a versatile platform for engineering band topology and correlation effects. In moiré materials that break either time-reversal symmetry or inversion symmetry or both, electronic bands exhibit Berry curvature hotspots. Different stacking orders in these materials result in varied Berry curvature distributions within the flat bands, even when the band dispersion remains similar. However, experimental studies probing the impact of stacking order on the quantum geometric quantities are lacking. 1.4$^\circ$ twisted double bilayer graphene (TDBG) facilitates two distinct stacking orders (AB-AB, AB-BA) and forms an inversion broken \moire superlattice with electrically tunable flat bands. The valley Chern numbers of the flat bands depend on the stacking order, and the nonlinear Hall (NLH) effect distinguishes the differences in Berry curvature dipole (BCD), the first moment of Berry curvature. The BCD exhibits antisymmetric behavior, flipping its sign with the polarity of the perpendicular electric field in AB-AB TDBG, while it displays a symmetric behavior, maintaining the same sign regardless of the electric field's polarity in AB-BA TDBG. This approach electronically detects stacking-induced quantum geometry, while opening a pathway to quantum geometry engineering and detection. △ Less

Submitted 26 February, 2025; originally announced February 2025.

Journal ref: Adv. Mater. 2025, 2417682

Symmetry-driven Intrinsic Nonlinear Pure Spin Hall Effect

Authors: Sayan Sarkar, Sunit Das, Amit Agarwal

Abstract: The generation of pure spin current, spin angular momentum transport without charge flow, is crucial for developing energy-efficient spintronic devices with minimal Joule heating. Here, we introduce the intrinsic nonlinear pure spin Hall effect (NPSHE), where both linear and second-order charge Hall currents vanish. We show intrinsic second-order spin angular momentum transport in metals and insul… ▽ More The generation of pure spin current, spin angular momentum transport without charge flow, is crucial for developing energy-efficient spintronic devices with minimal Joule heating. Here, we introduce the intrinsic nonlinear pure spin Hall effect (NPSHE), where both linear and second-order charge Hall currents vanish. We show intrinsic second-order spin angular momentum transport in metals and insulators through a detailed analysis of the quantum geometric origin of different spin current contributions. Our comprehensive symmetry analysis identifies 39 magnetic point groups that support NPSHE, providing a foundation for material design and experimental realization. We predict significant nonlinear pure spin Hall currents in Kramers-Weyl metals even at room temperature, positioning them as potential candidates for NPSHE-based spin-torque devices. Our work lays a practical pathway for realizing charge-free angular momentum transport for the development of next-generation, energy-efficient spintronic devices. △ Less

Submitted 25 February, 2025; originally announced February 2025.

Comments: 9 pages, 4 figures

Third-order rectification in centrosymmetric metals

Authors: Sanjay Sarkar, Amit Agarwal

Abstract: Rectification, the conversion of AC fields into DC currents, is crucial for optoelectronic applications such as energy harvesting and wireless communication. However, it is conventionally absent in centrosymmetric systems due to vanishing second-order optical responses. Here, we demonstrate significant rectification and photogalvanic currents in centrosymmetric metals via third-order nonlinear opt… ▽ More Rectification, the conversion of AC fields into DC currents, is crucial for optoelectronic applications such as energy harvesting and wireless communication. However, it is conventionally absent in centrosymmetric systems due to vanishing second-order optical responses. Here, we demonstrate significant rectification and photogalvanic currents in centrosymmetric metals via third-order nonlinear optical responses, driven by finite Fermi surface and disorder-induced contributions. We unveil distinct band geometric mechanisms -- including Berry curvature quadrupole, Fermi surface injection, and shift effects -- and classify all symmetry-allowed rectification responses. Using graphene as an example, we illustrate rectification tunability via light polarization and helicity, enabling rectification engineering in centrosymmetric materials for energy-efficient photodetection and terahertz applications. △ Less

Submitted 29 January, 2025; originally announced January 2025.

Comments: 8 pages, 3 figures

Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling

Authors: Keshari Nandan, Ateeb Naseer, Amit Agarwal, Somnath Bhowmick, Yogesh S. Chauhan

Abstract: Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the boundaries of miniaturization, it is intriguing to consider that the ultimate limit of contacted gate pitch could be reached with remarkable 1 nm gate-length transisto… ▽ More Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the boundaries of miniaturization, it is intriguing to consider that the ultimate limit of contacted gate pitch could be reached with remarkable 1 nm gate-length transistors. Here, we identify InSe, Bi2O2Se, and MoSi2N4 as potential two-dimensional semiconductors for 1 nm transistors with low contact resistance and outstanding interface properties. We employ a fully self-consistent ballistic quantum transport model starting from first-principle calculations. Our simulations show that the interplay between electrostatics and quantum tunneling influences the performance of these devices over the device design space. MoSi2N4 channels have the best immunity to quantum tunneling, and Bi2O2Se channel devices have the best electrostatics. We show that for a channel length of 12 nm, all the devices can deliver I_$ON$/I_$OFF$ > 10^3 , suitable for electronic applications, and Bi2O2Se is the best-performing channel material. △ Less

Submitted 14 December, 2024; v1 submitted 1 December, 2024; originally announced December 2024.

Comments: 7 pages, 9 figures

Journal ref: IEEE Transactions on Electron Devices, 2024

Harnessing Room-Temperature Ferroelectricity in Metal Oxide Monolayers for Advanced Logic Devices

Authors: Ateeb Naseer, Musaib Rafiq, Somnath Bhowmick, Amit Agarwal, Yogesh Singh Chauhan

Abstract: Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with significant spontaneous polarization. Additionally, these monolayers have a narrow valence band, which is energetically separated from the rest of the low-lyin… ▽ More Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with significant spontaneous polarization. Additionally, these monolayers have a narrow valence band, which is energetically separated from the rest of the low-lying valence bands. Such a unique band structure limits the long thermal tail of the hot carriers, mitigating subthreshold thermionic leakage and allowing field-effect transistors (FETs) to function beyond the bounds imposed on conventional FETs by thermodynamics. Our quantum transport simulations reveal that the FETs based on these MO monolayers exhibit a large ON/OFF ratio with an average subthreshold swing of less than 60 mV/decade at room temperature, even for short gate lengths. Our work motivates further exploration of the MO monolayers for developing advanced, high-performance memory and logic devices. △ Less

Submitted 25 October, 2024; originally announced October 2024.

Fractional quantum Hall effect in higher dimensions

Authors: Abhishek Agarwal, Dimitra Karabali, V. P. Nair

Abstract: Generalizing from previous work on the integer quantum Hall effect, we construct the effective action for the analog of Laughlin states for the fractional quantum Hall effect in higher dimensions. The formalism is a generalization of the parton picture used in two spatial dimensions, the crucial ingredient being the cancellation of anomalies for the gauge fields binding the partons together. Some… ▽ More Generalizing from previous work on the integer quantum Hall effect, we construct the effective action for the analog of Laughlin states for the fractional quantum Hall effect in higher dimensions. The formalism is a generalization of the parton picture used in two spatial dimensions, the crucial ingredient being the cancellation of anomalies for the gauge fields binding the partons together. Some subtleties which exist even in two dimensions are pointed out. The effective action is obtained from a combination of the Dolbeault and Dirac index theorems. We also present expressions for some transport coefficients such as Hall conductivity and Hall viscosity for the fractional states. △ Less

Submitted 10 January, 2025; v1 submitted 17 October, 2024; originally announced October 2024.

Comments: 29 pages, Added comments in section Concluding Remarks and new references, version published in Phys Rev D

Light-induced Nonlinear Resonant Spin Magnetization

Authors: Sayan Sarkar, Sunit Das, Debottam Mandal, Amit Agarwal

Abstract: The optical generation of nonequilibrium spin magnetization plays a crucial role in advancing spintronics, providing ultrafast control of magnetization dynamics without the need for magnetic fields. Here, we demonstrate the feasibility of light-induced nonlinear spin magnetization (LNSM), which becomes a dominant effect in centrosymmetric materials. We reveal the quantum geometric origins of vario… ▽ More The optical generation of nonequilibrium spin magnetization plays a crucial role in advancing spintronics, providing ultrafast control of magnetization dynamics without the need for magnetic fields. Here, we demonstrate the feasibility of light-induced nonlinear spin magnetization (LNSM), which becomes a dominant effect in centrosymmetric materials. We reveal the quantum geometric origins of various LNSM contributions in both metallic and insulating systems. Through detailed symmetry analysis, we predict significant LNSM in the antiferromagnetic material CuMnAs. Notably, under circularly polarized light, the spin magnetization exhibits helicity-dependent behavior, reversing with opposite light helicity. These findings open up new possibilities for generating LNSM-driven nonlinear spin-orbit torques and developing innovative opto-spintronic devices. △ Less

Submitted 18 September, 2024; originally announced September 2024.

Comments: Comments are welcome. 7 pages, 3 figures, 2 tables

Intrinsic nonlinear Nernst and Seebeck effect

Authors: Harsh Varshney, Amit Agarwal

Abstract: The Nernst and Seebeck effects are crucial for thermoelectric energy harvesting. However, the linear anomalous Nernst effect requires magnetic materials with intrinsically broken time-reversal symmetry. In non-magnetic systems, the dominant transverse thermoelectric response is the nonlinear Nernst current. Here, we investigate nonlinear Nernst and Seebeck effects to reveal intrinsic scattering-fr… ▽ More The Nernst and Seebeck effects are crucial for thermoelectric energy harvesting. However, the linear anomalous Nernst effect requires magnetic materials with intrinsically broken time-reversal symmetry. In non-magnetic systems, the dominant transverse thermoelectric response is the nonlinear Nernst current. Here, we investigate nonlinear Nernst and Seebeck effects to reveal intrinsic scattering-free Seebeck and Nernst currents arising from band geometric effects in bipartite antiferromagnets (parity-time-reversal symmetric systems). We show that these contributions, independent of scattering time, originate from the Berry connection polarizability tensor which depends on the quantum metric. Using CuMnAs as a model system, we demonstrate the dominance of intrinsic nonlinear Seebeck and Nernst currents over other scattering-dependent contributions. Our findings deepen the fundamental understanding of nonlinear thermoelectric phenomena and provide the foundation for using them to develop more efficient, next-generation energy harvesting devices. △ Less

Submitted 17 September, 2024; originally announced September 2024.

Comments: 9 pages, 4 figures, 1 table

Phonon-Assisted Photoluminescence and Exciton Recombination in Monolayer Aluminum Nitride

Authors: Pushpendra Yadav, Amit Agarwal, Sitangshu Bhattacharya

Abstract: Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we demonstrate that hexagonal aluminum nitride (AlN) monolayers exhibit strong photoluminescence emission within the UV range of 3.94 - 4.05 eV. We show that these… ▽ More Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we demonstrate that hexagonal aluminum nitride (AlN) monolayers exhibit strong photoluminescence emission within the UV range of 3.94 - 4.05 eV. We show that these emissions in indirect bandgap AlN are facilitated by phonon modes with finite lattice momentum. These phonon modes promote efficient recombination of electrons and holes from the $Γ$ to K point of the Brillouin zone. Our findings provide a foundation for developing advanced optoelectronic devices and efficient UV light sources based on hexagonal AlN monolayers. △ Less

Submitted 1 September, 2024; originally announced September 2024.

Nonlinear electrical transport unveils Fermi surface malleability in a moiré heterostructure

Authors: Suvronil Datta, Saisab Bhowmik, Harsh Varshney, Kenji Watanabe, Takashi Taniguchi, Amit Agarwal, U. Chandni

Abstract: Van Hove singularities enhance many-body interactions and induce collective states of matter ranging from superconductivity to magnetism. In magic-angle twisted bilayer graphene, van Hove singularities appear at low energies and are malleable with density, leading to a sequence of Lifshitz transitions and resets observable in Hall measurements. However, without a magnetic field, linear transport m… ▽ More Van Hove singularities enhance many-body interactions and induce collective states of matter ranging from superconductivity to magnetism. In magic-angle twisted bilayer graphene, van Hove singularities appear at low energies and are malleable with density, leading to a sequence of Lifshitz transitions and resets observable in Hall measurements. However, without a magnetic field, linear transport measurements have limited sensitivity to the band's topology. Here, we utilize nonlinear longitudinal and transverse transport measurements to probe these unique features in twisted bilayer graphene at zero magnetic field. We demonstrate that the nonlinear responses, induced by the Berry curvature dipole and extrinsic scattering processes, intricately map the Fermi surface reconstructions at various fillings. Importantly, our experiments highlight the intrinsic connection of these features with the moiré bands. Beyond corroborating the insights from linear Hall measurements, our findings establish nonlinear transport as a pivotal tool for probing band topology and correlated phenomena. △ Less

Submitted 16 August, 2024; originally announced August 2024.

Journal ref: Nano Letters 2024

Shift photocurrent vortices from topological polarization textures

Authors: Aneesh Agarwal, Wojciech J. Jankowski, Daniel Bennett, Robert-Jan Slager

Abstract: Following the recent interest in van der Waals (vdW) ferroelectrics, topologically nontrivial polar structures have been predicted to form in twisted bilayers. However, these structures have proven difficult to observe experimentally. We propose that these textures may be probed optically by showing that topological polarization textures result in exotic nonlinear optical responses. We derive this… ▽ More Following the recent interest in van der Waals (vdW) ferroelectrics, topologically nontrivial polar structures have been predicted to form in twisted bilayers. However, these structures have proven difficult to observe experimentally. We propose that these textures may be probed optically by showing that topological polarization textures result in exotic nonlinear optical responses. We derive this relationship analytically using non-Abelian Berry connections and a quantum-geometric framework, supported by tight-binding and first-principles calculations. For the case of moiré materials without centrosymmetry, which form networks of polar merons and antimerons, the shift photoconductivity forms a vortex-like structure in real space. For a range of frequencies where transitions between topologically trivial bands occur at the Brillouin zone edge, the shift photocurrents are antiparallel to the in-plane electronic polarization field. Our findings highlight the interplay between complex polarization textures and nonlinear optical responses in vdW materials and provide a sought-after strategy for their experimental detection. △ Less

Submitted 26 May, 2025; v1 submitted 7 August, 2024; originally announced August 2024.

Comments: 10+20 pages, 4+11 figures

Journal ref: npj 2D Mater. Appl. 9, 43 (2025)

Giant gate-controlled room temperature odd-parity magnetoresistance in magnetized bilayer graphene

Authors: Divya Sahani, Sunit Das, Kenji Watanabe, Takashi Taniguchi, Amit Agarwal, Aveek Bid

Abstract: Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure ex… ▽ More Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure exhibits a significant antisymmetric longitudinal magnetoresistance, indicative of intrinsic time-reversal symmetry (TRS) breaking in the system. We show that the OMR is tunable via electrostatic gating. Additionally, the OMR is pronounced near the band edges and diminishes with increasing charge carrier density in graphene. Our theoretical analysis reveals that this phenomenon arises from the coupling of the out-of-plane components of Berry curvature and orbital magnetic moment to the applied magnetic field in a TRS-broken system. Our findings establish OMR as a significant probe for TRS breaking in quantum materials in which the crystal symmetries preclude the appearance of anomalous Hall effect. △ Less

Submitted 19 July, 2024; originally announced July 2024.

Comments: 34 pages

Anisotropic magnetization dynamics in Fe5GeTe2 at room temperature

Authors: Alapan Bera, Nirmalya Jana, Amit Agarwal, Soumik Mukhopadhyay

Abstract: The determination of Lande's g-factor and the damping constant is central to extracting crucial information about the spin-spin and spin-orbit interactions in magnetically ordered systems. In insulating compounds based on 3d elements, the spin-orbit interaction can be effectively probed by investigating the ground state of the corresponding free 3d ion within the crystalline environment. For metal… ▽ More The determination of Lande's g-factor and the damping constant is central to extracting crucial information about the spin-spin and spin-orbit interactions in magnetically ordered systems. In insulating compounds based on 3d elements, the spin-orbit interaction can be effectively probed by investigating the ground state of the corresponding free 3d ion within the crystalline environment. For metallic systems, the problem is non-trivial because of additional band structure effects. Here, we investigate the anisotropic magnetization dynamics in bulk single crystalline Fe5GeTe2, a van der Waals 2D itinerant ferromagnet at room temperature, using broadband ferromagnetic resonance spectroscopy. Strikingly, contrary to the results of ab-initio calculations, we do not observe any intrinsic anisotropy of magnetization damping close to room temperature, suggesting diminished role of spin-orbit interaction. However, there is a sizable anisotropy in the Lande's g factor near room temperature which is attributed to anisotropic critical spin fluctuations. △ Less

Submitted 16 July, 2024; v1 submitted 19 June, 2024; originally announced June 2024.

Journal ref: Phys. Rev. B 110, 224401 (2024)

Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers

Authors: Ateeb Naseer, Achintya Priydarshi, Pritam Ghosh, Raihan Ahammed, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal

Abstract: Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96… ▽ More Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Journal ref: Nanoscale (2024)

Band geometry induced electro-optic effect and polarization rotation

Authors: M. Maneesh Kumar, Sanjay Sarkar, Amit Agarwal

Abstract: Electric field-induced modulation of the optical properties is crucial for amplitude and phase modulators used in photonic devices. Here, we present a comprehensive study of the band geometry-induced electro-optic effect, specifically focusing on the Fermi surface and disorder-induced contributions. These contributions are crucial for metallic and semimetallic systems and for optical frequencies c… ▽ More Electric field-induced modulation of the optical properties is crucial for amplitude and phase modulators used in photonic devices. Here, we present a comprehensive study of the band geometry-induced electro-optic effect, specifically focusing on the Fermi surface and disorder-induced contributions. These contributions are crucial for metallic and semimetallic systems and for optical frequencies comparable to or smaller than the scattering rates. We highlight the importance of the quantum metric and metric connection in generating the electro-optic effect in parity-time reversal ($\mathcal{PT}$) symmetric systems such as CuMnAs. Our findings establish the electro-optic effect as a novel tool to probe band geometric effects and open new avenues to design electrically controlled efficient amplitude and phase modulators for photonic applications. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 11 pages, 3 figures

Tunable moiré materials for probing Berry physics and topology

Authors: Pratap Chandra Adak, Subhajit Sinha, Amit Agarwal, Mandar M. Deshmukh

Abstract: Berry curvature physics and quantum geometric effects have been instrumental in advancing topological condensed matter physics in recent decades. Although Landau level-based flat bands and conventional 3D solids have been pivotal in exploring rich topological phenomena, they are constrained by their limited ability to undergo dynamic tuning. In stark contrast, moiré systems have risen as a versati… ▽ More Berry curvature physics and quantum geometric effects have been instrumental in advancing topological condensed matter physics in recent decades. Although Landau level-based flat bands and conventional 3D solids have been pivotal in exploring rich topological phenomena, they are constrained by their limited ability to undergo dynamic tuning. In stark contrast, moiré systems have risen as a versatile platform for engineering bands and manipulating the distribution of Berry curvature in momentum space. These moiré systems not only harbor tunable topological bands, modifiable through a plethora of parameters, but also provide unprecedented access to large length scales and low energy scales. Furthermore, they offer unique opportunities stemming from the symmetry-breaking mechanisms and electron correlations associated with the underlying flat bands that are beyond the reach of conventional crystalline solids. A diverse array of tools, encompassing quantum electron transport in both linear and non-linear response regimes and optical excitation techniques, provide direct avenues for investigating Berry physics. This review navigates the evolving landscape of tunable moiré materials, highlighting recent experimental breakthroughs in the field of topological physics. Additionally, we delineate several challenges and offer insights into promising avenues for future research. △ Less

Submitted 14 May, 2024; originally announced May 2024.

Comments: This is a version submitted to Nature Reviews Materials. The document contains 8 figures and 32 pages

Journal ref: Nature Reviews Materials (2024)

Planar Hall Effect in Quasi-Two-Dimensional Materials

Authors: Koushik Ghorai, Sunit Das, Harsh Varshney, Amit Agarwal

Abstract: The planar Hall effect in 3D systems is an effective probe for their Berry curvature, topology, and electronic properties. However, the Berry curvature-induced conventional planar Hall effect is forbidden in 2D systems as the out-of-plane Berry curvature cannot couple to the band velocity of the electrons moving in the 2D plane. Here, we demonstrate a unique 2D planar Hall effect (2DPHE) originati… ▽ More The planar Hall effect in 3D systems is an effective probe for their Berry curvature, topology, and electronic properties. However, the Berry curvature-induced conventional planar Hall effect is forbidden in 2D systems as the out-of-plane Berry curvature cannot couple to the band velocity of the electrons moving in the 2D plane. Here, we demonstrate a unique 2D planar Hall effect (2DPHE) originating from the hidden planar components of the Berry curvature and orbital magnetic moment in quasi-2D materials. We identify all planar band geometric contributions to 2DPHE and classify their crystalline symmetry restrictions. Using gated bilayer graphene as an example, we show that in addition to capturing the hidden band geometric effects, 2DPHE is also sensitive to the Lifshitz transitions. Our work motivates further exploration of hidden planar band geometry-induced 2DPHE and related transport phenomena for innovative applications. △ Less

Submitted 1 June, 2024; v1 submitted 1 May, 2024; originally announced May 2024.

Comments: Minor changes, Supplementary file included

Journal ref: Phys. Rev. Lett. 134, 026301 (2025)

Polarization textures in crystal supercells with topological bands

Authors: Wojciech J. Jankowski, Daniel Bennett, Aneesh Agarwal, Gaurav Chaudhary, Robert-Jan Slager

Abstract: Two-dimensional materials are a highly tunable platform for studying the momentum space topology of the electronic wavefunctions and real space topology in terms of skyrmions, merons, and vortices of an order parameter. Such textures for electronic polarization can exist in moiré heterostructures. A quantum-mechanical definition of local polarization textures in insulating supercells was recently… ▽ More Two-dimensional materials are a highly tunable platform for studying the momentum space topology of the electronic wavefunctions and real space topology in terms of skyrmions, merons, and vortices of an order parameter. Such textures for electronic polarization can exist in moiré heterostructures. A quantum-mechanical definition of local polarization textures in insulating supercells was recently proposed. Here, we propose a definition for local polarization that is also valid for systems with topologically non-trivial bands. We introduce semilocal hybrid polarizations, which are valid even when the Wannier functions in a system cannot be made exponentially localized in all dimensions. We use this definition to explicitly show that nontrivial real-space polarization textures can exist in topologically non-trivial systems with non-zero Chern number under (1) an external superlattice potential, and (2) under a stacking-induced moiré potential. In the latter, we find that while the magnitude of the local polarization decreases discontinuously across a topological phase transition from trivial to topologically nontrivial, the polarization does not completely vanish. Our findings suggest that band topology and real-space polar topology may coexist in real materials. △ Less

Submitted 28 August, 2024; v1 submitted 25 April, 2024; originally announced April 2024.

Comments: 7+7 pages, 3+2 figures

Journal ref: Phys. Rev. B 110, 085429 (2024)

Orbital angular momentum of Bloch electrons: equilibrium formulation, magneto-electric phenomena, and the orbital Hall effect

Authors: Rhonald Burgos Atencia, Amit Agarwal, Dimitrie Culcer

Abstract: The investigation of orbital angular momentum (OAM) of delocalised Bloch electrons has advanced our understanding of magnetic, transport, and optical phenomena in crystals, drawing widespread interest across various materials science domains, from metals and semiconductors to topological and magnetic materials. Here, we review OAM dynamics in depth, focusing on key concepts and non-equilibrium sys… ▽ More The investigation of orbital angular momentum (OAM) of delocalised Bloch electrons has advanced our understanding of magnetic, transport, and optical phenomena in crystals, drawing widespread interest across various materials science domains, from metals and semiconductors to topological and magnetic materials. Here, we review OAM dynamics in depth, focusing on key concepts and non-equilibrium systems, and laying the groundwork for the thriving field of {\it orbitronics}. We review briefly the conventional understanding of the equilibrium OAM based on the modern theory of orbital magnetisation. Following this, we explore recent theoretical and experimental developments in out-of-equilibrium systems. We focus on the generation of an OAM density via the orbital magneto-electric, or Edelstein effect, the generation of an OAM current via the orbital Hall effect, the orbital torque resulting from them, along with their reciprocal non-equilibrium counterparts -- the inverse orbital Edelstein and inverse orbital Hall effects, as well as OAM conservation. We discuss the most salient achievements and the most pressing challenges in this rapidly evolving field, and in closing we highlight the future prospects of {\it orbitronics}. △ Less

Submitted 19 June, 2024; v1 submitted 11 March, 2024; originally announced March 2024.

Comments: 25 pages, 8 figures

Journal ref: Advances in Physics: X, 9(1), Article Number: 2371972 (2024)

Nonlinear Landau fan diagram and aperiodic magnetic oscillations in three-dimensional systems

Authors: Sunit Das, Suvankar Chakraverty, Amit Agarwal

Abstract: Quantum oscillations offer a powerful probe for the geometry and topology of the Fermi surface in metals. Onsager's semiclassical quantization relation governs these periodic oscillations in 1/B, leading to a linear Landau fan diagram. However, higher-order magnetic susceptibility-induced corrections give rise to a generalized Onsager's relation, manifesting in experiments as a nonlinear Landau fa… ▽ More Quantum oscillations offer a powerful probe for the geometry and topology of the Fermi surface in metals. Onsager's semiclassical quantization relation governs these periodic oscillations in 1/B, leading to a linear Landau fan diagram. However, higher-order magnetic susceptibility-induced corrections give rise to a generalized Onsager's relation, manifesting in experiments as a nonlinear Landau fan diagram and aperiodic quantum oscillations. Here, we explore the generalized Onsager's relation to three-dimensional (3D) systems to capture the B-induced corrections in the free energy and the Fermi surface. We unravel the manifestation of these corrections in the nonlinear Landau fan diagrams and aperiodic quantum oscillations by deriving the B-dependent oscillation frequency and the generalized Lifshitz-Kosevich equation, respectively. Our theory explains the necessary conditions to observe these fascinating effects and predicts the magnetic field dependence of the cyclotron mass. As a concrete example, we elucidate these effects in a 3D spin-orbit coupled system and extract zero-field magnetic response functions from analytically obtained Landau levels. Our comprehensive study deepens and advances our understanding of aperiodic quantum oscillations. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Comments: 11+4 pages, 4 figures, Comments are welcome

Large quantum nonreciprocity in plasmons dragged by drifting electrons

Authors: Debasis Dutta, Amit Agarwal

Abstract: Collective plasmon modes, riding on top of drifting electrons, acquire a fascinating nonreciprocal dispersion characterized by $ω_p(\bm{q}) \neq ω_p(-\bm{q})$. The {\it classical} plasmonic Doppler shift arises from the polarization of the Fermi surface due to the applied DC bias voltage. Going beyond this paradigm, we predict a {\it quantum} plasmonic Doppler shift originating from the quantum me… ▽ More Collective plasmon modes, riding on top of drifting electrons, acquire a fascinating nonreciprocal dispersion characterized by $ω_p(\bm{q}) \neq ω_p(-\bm{q})$. The {\it classical} plasmonic Doppler shift arises from the polarization of the Fermi surface due to the applied DC bias voltage. Going beyond this paradigm, we predict a {\it quantum} plasmonic Doppler shift originating from the quantum metric of the Bloch wavefunction. We systematically compare the classical and quantum Doppler shifts by investigating the drift-induced nonreciprocal plasmon dispersion in generic quantum systems. We demonstrate quantum nonreciprocal plasmons in graphene and twisted bilayer graphene. We show that the quantum plasmonic Doppler shift dominates in \moire systems at large wavevectors, yielding plasmonic nonreciprocity up to 20\% in twisted bilayer graphene. Our findings demonstrate the supremacy of plasmonic quantum Doppler shift in \moire systems, motivating the design of innovative nonreciprocal photonic devices with potential technological implications. △ Less

Submitted 8 July, 2024; v1 submitted 10 December, 2023; originally announced December 2023.

Comments: Comments are welcome

Quantum Geometry Induced Third Order Nonlinear Transport Responses

Authors: Debottam Mandal, Sanjay Sarkar, Kamal Das, Amit Agarwal

Abstract: Nonlinear transport phenomena offer an exciting probe into the band geometry and symmetry properties of a system. While most studies on nonlinear transport have looked at second-order nonreciprocal responses in noncentrosymmetric systems, the reciprocal third-order effects dominant in centrosymmetric systems remain largely uncharted. Here, we uncover two significant contributions to third-order ch… ▽ More Nonlinear transport phenomena offer an exciting probe into the band geometry and symmetry properties of a system. While most studies on nonlinear transport have looked at second-order nonreciprocal responses in noncentrosymmetric systems, the reciprocal third-order effects dominant in centrosymmetric systems remain largely uncharted. Here, we uncover two significant contributions to third-order charge conductivity: one affecting longitudinal resistance and another impacting the Hall effect. We demonstrate that these previously unexplored contributions arise in time-reversal symmetry-broken systems from band geometric quantities such as the Berry curvature and the symplectic connection. We prescribe a detailed symmetry dictionary to facilitate the discovery of these fundamental transport coefficients. Additionally, we unify our quantum kinetic results with the semiclassical wave-packet formalism to unveil all contributions to third-order charge transport. We illustrate our results in antiferromagnetic monolayer SrMnBi$_2$. Our comprehensive study significantly advances the fundamental understanding of reciprocal nonlinear responses. △ Less

Submitted 1 June, 2024; v1 submitted 29 October, 2023; originally announced October 2023.

Comments: 15 pages, 5 figures, Comments are welcome

Electronic Transport and Fermi Surface Topology of Zintl Phase Compound SrZn2Ge2

Authors: M. K. Hooda, A. Chakraborty, S. Roy, R. Swami, A. Agarwal, P. Mandal, S. N. Sarangi, D. Samal, V. P. S. Awana, Z. Hossain

Abstract: We report a comprehensive study on the electronic transport properties of SrZn2Ge2 single crystals. The electrical resistivity of the compound exhibits metallic behavior, following a T^2 dependence below 35 K, consistent with the Fermi liquid behavior. However, a notable deviation is observed from this behavior at lower temperatures as a pronounced resistivity plateau emerges below 10 K. This plat… ▽ More We report a comprehensive study on the electronic transport properties of SrZn2Ge2 single crystals. The electrical resistivity of the compound exhibits metallic behavior, following a T^2 dependence below 35 K, consistent with the Fermi liquid behavior. However, a notable deviation is observed from this behavior at lower temperatures as a pronounced resistivity plateau emerges below 10 K. This plateau is remarkably robust, and persists under the magnetic fields of up to 10 T. Both the transverse and longitudinal magnetoresistance exhibit a crossover at critical field B* from weak-field quadratic-like to high-field unsaturated linear field dependence at low temperatures (T \leq 50 K). Possible sources of linear magnetoresistance are discussed based on the Fermi surface topology, classical and quantum transport models. The Hall resistivity data establish SrZn2Ge2 as a multiband system with contributions from both the electrons and holes. The Hall coefficient is observed to decrease with increasing temperature and magnetic field, changing its sign from positive to negative. The negative Hall coefficient observed at low temperatures in high fields and at high temperatures over the entire field range suggests that the highly mobile electron charge carriers dominate the electronic transport. Our first-principles calculations show that nontrivial topological surface states exist in SrZn2Ge2 within the bulk gap along the Gamma-M path. Notably, these surface states extend from the valence to conduction band with their number varying based on the Sr and Ge termination plane. The Fermi surface of the compound exhibits a distinct tetragonal petal-like structure, with one open and several closed surfaces. Overall, these findings offer crucial insights into the mechanisms underlying the electronic transport of the compound. △ Less

Submitted 19 October, 2024; v1 submitted 16 October, 2023; originally announced October 2023.

Comments: 16 pages, 11 figures

ACM Class: J.2

Journal ref: Journal of Alloys and Compounds 1010, 178130 (2025)

Unconventional superconducting pairing in a B20 Kramers Weyl semimetal

Authors: Sougata Mardanya, Mehdi Kargarian, Rahul Verma, Tay-Rong Chang, Sugata Chowdhury, Hsin Lin, Arun Bansil, Amit Agarwal, Bahadur Singh

Abstract: Topological superconductors present an ideal platform for exploring nontrivial superconductivity and realizing Majorana boundary modes in materials. However, finding a single-phase topological material with nontrivial superconducting states is a challenge. Here, we predict nontrivial superconductivity in the pristine chiral metal RhGe with a transition temperature of 5.8 K. Chiral symmetries in Rh… ▽ More Topological superconductors present an ideal platform for exploring nontrivial superconductivity and realizing Majorana boundary modes in materials. However, finding a single-phase topological material with nontrivial superconducting states is a challenge. Here, we predict nontrivial superconductivity in the pristine chiral metal RhGe with a transition temperature of 5.8 K. Chiral symmetries in RhGe enforce multifold Weyl fermions at high-symmetry momentum points and spin-polarized Fermi arc states that span the whole surface Brillouin zone. These bulk and surface chiral states support multiple type-II van Hove singularities that enhance superconductivity in RhGe. Our detailed analysis of superconducting pairing symmetries involving Chiral Fermi pockets in RhGe, indicates the presence of nontrivial superconducting pairing. Our study establishes RhGe as a promising candidate material for hosting mixed-parity pairing and topological superconductivity. △ Less

Submitted 24 September, 2023; v1 submitted 11 September, 2023; originally announced September 2023.

Comments: 7 pages, 4 figures

Nonlinear Valley Hall Effect

Authors: Kamal Das, Koushik Ghorai, Dimitrie Culcer, Amit Agarwal

Abstract: The valley Hall effect arises from valley contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal symmetry, where the linear and second-order charge Hall currents vanish along with the linear valley Hall current. We show that a second-order valley Hall signal emer… ▽ More The valley Hall effect arises from valley contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal symmetry, where the linear and second-order charge Hall currents vanish along with the linear valley Hall current. We show that a second-order valley Hall signal emerges from the electric field correction to the Berry curvature, provided a valley-contrasting anisotropic dispersion is engineered. We demonstrate the nonlinear valley Hall effect in tilted massless Dirac fermions in strained graphene and organic semiconductors. Our work opens up the possibility of controlling the valley degree of freedom in inversion symmetric systems via nonlinear valleytronics. △ Less

Submitted 21 January, 2024; v1 submitted 22 July, 2023; originally announced July 2023.

Comments: Final version to appear in Phys. Rev. Lett. The SM can be accessed via the link in Ref. 30

Journal ref: Phys. Rev. Lett. 132, 096302 (2024)

Versatility of type-II van der Waals heterostructures: a case study with SiH-CdCl2

Authors: Achintya Priydarshi, Abhinav Arora, Yogesh Singh Chauhan, Amit Agarwal, Somnath Bhowmick

Abstract: Unlike bilayers or a few layers thick materials, heterostructures are designer materials formed by assembling different monolayers in any desired sequence. As a result, while multilayer materials come with their intrinsic properties, heterostructures can be tailor-made to suit specific applications. Taking SiH-CdCl 2 as a representative system, we show the potential of heterostructures for several… ▽ More Unlike bilayers or a few layers thick materials, heterostructures are designer materials formed by assembling different monolayers in any desired sequence. As a result, while multilayer materials come with their intrinsic properties, heterostructures can be tailor-made to suit specific applications. Taking SiH-CdCl 2 as a representative system, we show the potential of heterostructures for several applications, like piezoelectricity, photocatalytic water splitting, and tunnel field effect transistor (TFET). Our study confirms that the characteristics of the heterostructure mainly depend on the potential difference between the constituent monolayers. From the vast database of available layered materials, many such combinations with a suitable potential difference are expected to have similar properties. Our work points to a vast pool of assembled materials with multifunctionality, an excellent asset for next-generation device applications. △ Less

Submitted 3 June, 2023; originally announced June 2023.

Journal ref: Cite this: J. Phys. Chem. C 2023

Intrinsic nonlinear thermal Hall transport of magnons: A Quantum kinetic theory approach

Authors: Harsh Varshney, Rohit Mukherjee, Arijit Kundu, Amit Agarwal

Abstract: We present a systematic study of the nonlinear thermal Hall responses in bosonic systems using the quantum kinetic theory framework. We demonstrate the existence of an intrinsic nonlinear boson thermal current, arising from the quantum metric which is a wavefunction dependent band geometric quantity. In contrast to the nonlinear Drude and nonlinear anomalous Hall contributions, the intrinsic nonli… ▽ More We present a systematic study of the nonlinear thermal Hall responses in bosonic systems using the quantum kinetic theory framework. We demonstrate the existence of an intrinsic nonlinear boson thermal current, arising from the quantum metric which is a wavefunction dependent band geometric quantity. In contrast to the nonlinear Drude and nonlinear anomalous Hall contributions, the intrinsic nonlinear thermal conductivity is independent of the scattering timescale. We demonstrate the dominance of this intrinsic thermal Hall response in topological magnons in a two-dimensional ferromagnetic honeycomb lattice without Dzyaloshinskii-Moriya interaction. Our findings highlight the significance of band geometry induced nonlinear thermal transport and motivate experimental probe of the intrinsic nonlinear thermal Hall response with implications for quantum magnonics. △ Less

Submitted 29 September, 2023; v1 submitted 29 May, 2023; originally announced May 2023.

Comments: 20 pages, and 5 figures; Revised version incorporating suggestions by the PRB referee's. To appear in PRB

Journal ref: Phys. Rev. B. 108, 165412 (2023)

Room temperature electron-hole liquid phase in monolayer MoSi$_2$Z$_4$ (Z = pinctogen)

Authors: Pushpendra Yadav, K. V. Adarsh, Amit Agarwal

Abstract: Photo-excited electrons and holes in insulators, above a critical density and below a critical temperature, can condense to form an electron-hole liquid (EHL) phase. However, observing the EHL phase at room temperature is extremely challenging. Here, we introduce the monolayer MoSi$_2$Z$_4$ (Z= N, As, P) series of compounds as a promising platform for observing the EHL phase at room temperature. T… ▽ More Photo-excited electrons and holes in insulators, above a critical density and below a critical temperature, can condense to form an electron-hole liquid (EHL) phase. However, observing the EHL phase at room temperature is extremely challenging. Here, we introduce the monolayer MoSi$_2$Z$_4$ (Z= N, As, P) series of compounds as a promising platform for observing the EHL phase at room temperature. The higher impact of the Coulomb interactions in two dimensions helps these monolayers support the EHL phase with an increased EHL binding energy and transition temperature, along with strongly bound excitons. Our findings motivate further exploration of the MoSi$_2$Z$_4$ monolayers for realizing the EHL phase at high temperatures to harness collective phenomena for optoelectronic applications. △ Less

Submitted 11 March, 2023; originally announced March 2023.

Room Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-metallic Monolayer CrTe

Authors: Imran Ahamed, Atasi Chakraborty, Pushpendra Yadav, Rik Dey, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal

Abstract: Two-dimensional materials hosting ferroelectricity and ferromagnetism are crucial for low-power and high-speed information processing technologies. However, intrinsic 2D multiferroics in the monolayer limit are rare. Here, we demonstrate that monolayer CrTe, obtained by cleaving the [002] surface, is dynamically stable multiferroic at temperatures beyond room temperature. We show that it orders fe… ▽ More Two-dimensional materials hosting ferroelectricity and ferromagnetism are crucial for low-power and high-speed information processing technologies. However, intrinsic 2D multiferroics in the monolayer limit are rare. Here, we demonstrate that monolayer CrTe, obtained by cleaving the [002] surface, is dynamically stable multiferroic at temperatures beyond room temperature. We show that it orders ferromagnetically with significant in-plane magnetocrystalline anisotropy, and it is a half-metal featuring a large half-metal gap. Remarkably, the broken inversion symmetry and buckled geometry of monolayer CrTe make it a ferroelectric with a large spontaneous out-of-plane polarization and significant magnetoelectric coupling. In addition, we demonstrate polarization or electric field-induced tunability of the anomalous Hall effect, accompanied by substantial bandstructure modulation. Our findings establish monolayer CrTe as a room-temperature multiferroic with great potential for applications in spintronics and ferroelectric devices. △ Less

Submitted 24 October, 2023; v1 submitted 4 February, 2023; originally announced February 2023.

Comments: 9 double column pages, and 5 figures; A significantly updated version predicting monolayer CrTe to be an intrinsic multiferroic at room temperature

Observation of highly anisotropic bulk dispersion and spin-polarized topological surface states in CoTe2

Authors: Atasi Chakraborty, Jun Fujii, Chia-Nung Kuo, Chin Shan Lue, Antonio Politano, Ivana Vobornik, Amit Agarwal

Abstract: We present CoTe2 as a new type-II Dirac semimetal supporting Lorentz symmetry violating Dirac fermions in the vicinity of the Fermi energy. By combining first principle ab-initio calculations with experimental angle-resolved photo-emission spectroscopy results, we show the CoTe2 hosts a pair of type-II Dirac fermions around 90 meV above the Fermi energy. In addition to the bulk Dirac fermions, we… ▽ More We present CoTe2 as a new type-II Dirac semimetal supporting Lorentz symmetry violating Dirac fermions in the vicinity of the Fermi energy. By combining first principle ab-initio calculations with experimental angle-resolved photo-emission spectroscopy results, we show the CoTe2 hosts a pair of type-II Dirac fermions around 90 meV above the Fermi energy. In addition to the bulk Dirac fermions, we find several topological band inversions in bulk CoTe2, which gives rise to a ladder of spin-polarized surface states over a wide range of energies. In contrast to the surface states which typically display Rashba-type in-plane spin splitting, we find that CoTe2 hosts novel out-of-plane spin polarization as well. Our work establishes CoTe2 as a potential candidate for the exploration of Dirac fermiology and applications in spintronic devices, infrared plasmonics, and ultrafast optoelectronics. △ Less

Submitted 27 January, 2023; originally announced January 2023.

Comments: 9 pages,7 figures, Accepted in Phys. Rev. B

Journal ref: Phys. Rev. B 107, 085406 (2023)

Discovery of a magnetic Dirac system with large intrinsic non-linear Hall effect

Authors: Federico Mazzola, Barun Ghosh, Jun Fujii, Gokul Acharya, Debashis Mondal, Giorgio Rossi, Arun Bansil, Daniel Farias, Jin Hu, Amit Agarwal, Antonio Politano, Ivana Vobornik

Abstract: Magnetic materials exhibiting topological Dirac fermions are attracting significant attention for their promising technological potential in spintronics. In these systems, the combined effect of the spin-orbit coupling and magnetic order enables the realization of novel topological phases with exotic transport properties, including the anomalous Hall effect and magneto-chiral phenomena. Herein, we… ▽ More Magnetic materials exhibiting topological Dirac fermions are attracting significant attention for their promising technological potential in spintronics. In these systems, the combined effect of the spin-orbit coupling and magnetic order enables the realization of novel topological phases with exotic transport properties, including the anomalous Hall effect and magneto-chiral phenomena. Herein, we report experimental signature of topological Dirac antiferromagnetism in TaCoTe2 via angle-resolved photoelectron spectroscopy (ARPES) and first-principles density functional theory (DFT) calculations. In particular, we find the existence of spin-orbit coupling-induced gaps at the Fermi level, consistent with the manifestation of a large intrinsic non-linear Hall conductivity. Remarkably, we find that the latter is extremely sensitive to the orientation of the Néel vector, suggesting TaCoTe2 a suitable candidate for the realization of non-volatile spintronic devices with an unprecedented level of intrinsic tunability. △ Less

Submitted 21 January, 2023; originally announced January 2023.

Caustics in the sine-Gordon model from quenches in coupled 1D Bose gases

Authors: Aman Agarwal, Manas Kulkarni, D. H. J. O'Dell

Abstract: Caustics are singularities that occur naturally in optical, hydrodynamic and quantum waves, giving rise to high amplitude patterns that can be described using catastrophe theory. In this paper we study caustics in a statistical field theory setting in the form of the sine-Gordon model that describes a variety of physical systems including coupled 1D superfluids. Specifically, we use classical fiel… ▽ More Caustics are singularities that occur naturally in optical, hydrodynamic and quantum waves, giving rise to high amplitude patterns that can be described using catastrophe theory. In this paper we study caustics in a statistical field theory setting in the form of the sine-Gordon model that describes a variety of physical systems including coupled 1D superfluids. Specifically, we use classical field simulations to study the dynamics of two ultracold 1D Bose gases (quasi-condensates) that are suddenly coupled to each other and find that the resulting non-equilibrium dynamics are dominated by caustics. Thermal noise is included by sampling the initial states from a Boltzmann distribution for phononic excitations. We find that caustics pile up over time in both the number and phase difference observables leading to a characteristic non-thermal `circus tent' shaped probability distribution at long times. △ Less

Submitted 23 July, 2023; v1 submitted 19 January, 2023; originally announced January 2023.

Comments: 30 pages, 15 figures. In this second version we have added a figure (Fig. 15) giving the probability distribution at long times after a quench for the phase difference variable

Journal ref: Phys. Rev. A 108, 013312 (2023)

Chiral anomalies in 3D spin-orbit coupled metals: electrical, thermal, and gravitational anomaly

Authors: Sunit Das, Kamal Das, Amit Agarwal

Abstract: The discovery of a chiral anomaly in Weyl semimetals, the non-conservation of chiral charge and energy across two opposite chirality Weyl nodes, has sparked immense interest in understanding its impact on various physical phenomena. Here, we demonstrate the existence of electrical, thermal, and gravitational quantum chiral anomalies in 3D spin-orbit coupled systems. Notably, these anomalies involv… ▽ More The discovery of a chiral anomaly in Weyl semimetals, the non-conservation of chiral charge and energy across two opposite chirality Weyl nodes, has sparked immense interest in understanding its impact on various physical phenomena. Here, we demonstrate the existence of electrical, thermal, and gravitational quantum chiral anomalies in 3D spin-orbit coupled systems. Notably, these anomalies involve chiral charge transfer across two Fermi surfaces linked to a single Weyl-like point, rather than across opposite chirality Weyl nodes as in Weyl semimetals. Our findings reveal that the Berry curvature flux piercing the Fermi surface plays a critical role in distinguishing the `chirality' of the carriers and the corresponding chiral charge and energy transfer. Importantly, we demonstrate that these quantum chiral anomalies lead to interesting thermal spin transport such as the spin Nernst effect. Our results suggest that 3D spin-orbit coupled metals offer a promising platform for investigating the interplay between quantum chiral anomalies and charge and spin transport in non-relativistic systems. △ Less

Submitted 7 January, 2023; originally announced January 2023.

Comments: 14 pages, and 4 figures. Seeking feedback, criticism or comments on this paper

Observation of time-reversal symmetric Hall effect in graphene-WSe2 heterostructures at room temperature

Authors: Priya Tiwari, Divya Sahani, Atasi Chakraborty, Kamal Das, Kenji Watanabe, Takashi Taniguchi, Amit Agarwal, Aveek Bid

Abstract: In this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe$_2$ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign of the charge carriers, persists up to room temperature. The magnitude and the sign of the Hall signal can be tuned using an external perpendicular electric fi… ▽ More In this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe$_2$ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign of the charge carriers, persists up to room temperature. The magnitude and the sign of the Hall signal can be tuned using an external perpendicular electric field. Our joint experimental and theoretical study establishes that the strain induced by lattice mismatch, or angle inhomogeneity, produces anisotropic bands in graphene while simultaneously breaking the inversion symmetry. The band anisotropy and reduced spatial symmetry lead to the appearance of a time-reversal symmetric Hall effect. Our study establishes graphene-transition metal dichalcogenide-based heterostructures as an excellent platform for studying the effects of broken symmetry on the physical properties of band-engineered two-dimensional systems. △ Less

Submitted 18 July, 2023; v1 submitted 5 January, 2023; originally announced January 2023.

Quantum Kinetic Theory of Nonlinear Optical Currents: Finite Fermi surface and Fermi sea contributions

Authors: Pankaj Bhalla, Kamal Das, Amit Agarwal, Dimitrie Culcer

Abstract: The quantum kinetic framework provides a versatile method for investigating the dynamical optical and transport currents of crystalline solids. In this paper, starting from the density-matrix equations of motion, we present a general theoretical path to obtain nonlinear optical responses elegantly and transparently. We devise a kinetic theory applicable to materials with arbitrary band structures… ▽ More The quantum kinetic framework provides a versatile method for investigating the dynamical optical and transport currents of crystalline solids. In this paper, starting from the density-matrix equations of motion, we present a general theoretical path to obtain nonlinear optical responses elegantly and transparently. We devise a kinetic theory applicable to materials with arbitrary band structures and captures intraband and interband coherence effects, finite Fermi surfaces, and disorder effects. We present a classification of nonlinear optical currents arising from the interference of interband and intraband components of the density matrix with distinct symmetry and quantum geometrical origin for each contribution. In this context, we report four findings. (i) The Fermi Golden Rule approach is insufficient to derive the correct expression for the injection current, a shortcoming that we remedy in our theory while associating the injection current with the intraband-interband contribution to the second-order density matrix. (ii) The interband-intraband contribution yields a resonant current that survives irrespective of any symmetry constraint in addition to the well-known anomalous nonlinear current (non-resonant), which requires time-reversal symmetry. (iii) Quite generally, the nonlinear current is significantly enhanced by contributions from the finite Fermi surface. (iv) The finite Fermi surface and Fermi sea additionally lead to sizable novel nonlinear effects via contributions we term double resonant and higher-order pole. As an illustration, we compute the nonlinear response of topological antiferromagnet CuMnAs and thin film tilted Weyl semimetals dominated by interband coherence effects. We find that the nonlinear response of CuMnAs is responsive to the direction of finite magnetization field and choice of the polarization angle of the beam, while Weyl semimetal only to tilt. △ Less

Submitted 20 December, 2022; originally announced December 2022.

Comments: 16 pages, 4 figures, Comments/Suggestions are welcome

Journal ref: Phys. Rev. B 107, 165131 (2023)

Intrinsic nonreciprocal bulk plasmons in noncentrosymmetric magnetic systems

Authors: Debasis Dutta, Atasi Chakraborty, Amit Agarwal

Abstract: Nonreciprocal plasmonics enables one-way light propagation at the nanoscale and it is an essential building block for photonics applications. Here, we explore intrinsic nonreciprocity in bulk plasmon propagation based on underlying symmetries. We demonstrate that the interband, as well as the intraband bulk plasmon modes, follow asymmetric dispersion depending on the sign of the wavevector for sys… ▽ More Nonreciprocal plasmonics enables one-way light propagation at the nanoscale and it is an essential building block for photonics applications. Here, we explore intrinsic nonreciprocity in bulk plasmon propagation based on underlying symmetries. We demonstrate that the interband, as well as the intraband bulk plasmon modes, follow asymmetric dispersion depending on the sign of the wavevector for systems with broken inversion and time-reversal symmetry. We show that the nonreciprocity in the interband plasmon dispersion is dictated by the quantum metric connection, which is a band geometric quantity. The intrinsic nonreciprocity in bulk intraband plasmon dispersion is dictated by the quantum metric dipole and a higher-order `Drude' weight-like term. We corroborate our findings via explicit numerical calculations for the two-dimensional Qi-Wu-Zhang model and demonstrate the existence of intrinsic nonreciprocal intraband and interband plasmon modes in moire systems such as twisted bilayer graphene. △ Less

Submitted 30 March, 2023; v1 submitted 5 December, 2022; originally announced December 2022.

Comments: 14 pages, 6 figures

Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series

Authors: Keshari Nandan, Somnath Bhowmick, Yogesh S. Chauhan, Amit Agarwal

Abstract: The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a solution to this problem by using narrow bandwidth semiconductors for limiting the thermionic leakage current by filtering out the high energy carriers. We specifi… ▽ More The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a solution to this problem by using narrow bandwidth semiconductors for limiting the thermionic leakage current by filtering out the high energy carriers. We specifically demonstrate this solution in transistors with laterally confined monolayer MoSi2N4 with different passivation serving as channel material. Remarkably, we find that the proposed narrow bandwidth devices can achieve a large ON/OFF current ratio with an ultra-low-power supply voltage of 0.1 V, even for devices with a 5 nm gate length. We also show that several other materials share the unique electronic properties of narrow bandwidth conduction and valance bands in the same series. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Comments: 11 pages with 4 figures

Quantum kinetic theory of nonlinear thermal current

Authors: Harsh Varshney, Kamal Das, Pankaj Bhalla, Amit Agarwal

Abstract: We investigate the second-order nonlinear electronic thermal transport induced by temperature gradient. We develop the quantum kinetic theory framework to describe thermal transport in presence of a temperature gradient. Using this, we predict an intrinsic scattering time independent nonlinear thermal current in addition to the known extrinsic nonlinear Drude and Berry curvature dipole contributio… ▽ More We investigate the second-order nonlinear electronic thermal transport induced by temperature gradient. We develop the quantum kinetic theory framework to describe thermal transport in presence of a temperature gradient. Using this, we predict an intrinsic scattering time independent nonlinear thermal current in addition to the known extrinsic nonlinear Drude and Berry curvature dipole contributions. We show that the intrinsic thermal current is determined by the band geometric quantities and is non-zero only in systems where both the space inversion and time-reversal symmetries are broken. We employ the developed theory to study the thermal response in tilted massive Dirac systems. We show that besides the different scattering time dependence, the various current contributions have distinct temperature dependence in the low temperature limit. Our systematic and comprehensive theory for nonlinear thermal transport paves the way for future theoretical and experimental studies on intrinsic thermal responses. △ Less

Submitted 12 April, 2023; v1 submitted 3 November, 2022; originally announced November 2022.

Comments: 16 pages, 4 figures; Revised and updated version

Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$

Authors: Sudip Malick, A. B. Sarkar, Antu Laha, M. Anas, V. K. Malik, Amit Agarwal, Z. Hossain, J. Nayak

Abstract: We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and… ▽ More We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and cusp-like magneto-conductivity. The maximum value of magnetoresistance turns out to be 459\% at 2 K and 12 T. The analysis of the cusp-like feature in magneto-conductivity indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in SrAl$_2$Si$_2$, with low carrier density. △ Less

Submitted 3 August, 2022; originally announced August 2022.

Journal ref: Phys. Rev. B 106, 075105 (2022)

Strongly bound excitons in monolayer MoSi$_2$Z$_4$ (Z = pnictogen)

Authors: Pushpendra Yadav, Bramhachari Khamari, Bahadur Singh, K. V. Adarsh, Amit Agarwal

Abstract: Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response even at room temperature. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic MoSi$_2$Z$_4$ (Z = N, P, and As) series of materials. All three monolayers support several bright and st… ▽ More Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response even at room temperature. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic MoSi$_2$Z$_4$ (Z = N, P, and As) series of materials. All three monolayers support several bright and strongly bound excitons with binding energies varying from 1 eV to 1.35 eV for the lowest energy exciton resonances. On increasing the pump fluence, the exciton binding energies get renormalized, leading to a redshift-blueshift crossover. Our study shows that the MoSi$_2$Z$_4$ series of monolayers offer an exciting test-bed for exploring the physics of strongly bound excitons and their non-equilibrium dynamics. △ Less

Submitted 10 July, 2022; originally announced July 2022.

Comments: 10 pages, 5 figures, 2 tables. Comments and suggestions are most welcome

Intrinsic nonlinear conductivities induced by the quantum metric

Authors: Kamal Das, Shibalik Lahiri, Rhonald Burgos Atencia, Dimitrie Culcer, Amit Agarwal

Abstract: The second-order nonlinear current originates from three physical mechanisms: extrinsic nonlinear Drude and Berry curvature dipole and intrinsic Berry connection polarizability. Here, we predict a new intrinsic contribution to the current related to the quantum metric, a quantum geometric property of the electronic wave function. This contribution manifests in systems that simultaneously break the… ▽ More The second-order nonlinear current originates from three physical mechanisms: extrinsic nonlinear Drude and Berry curvature dipole and intrinsic Berry connection polarizability. Here, we predict a new intrinsic contribution to the current related to the quantum metric, a quantum geometric property of the electronic wave function. This contribution manifests in systems that simultaneously break the time-reversal and the inversion symmetry. Interestingly, the new contribution is dissipative in nature and contributes to both longitudinal and the dissipative nonlinear Hall response. The quantum metric-induced NL current dominates transport in parity-time reversal symmetric systems near the band edges, something we show explicitly for topological antiferromagnets. △ Less

Submitted 12 December, 2023; v1 submitted 5 July, 2022; originally announced July 2022.

Comments: 6 pages, 3 figures; Updated published version

Journal ref: Physical Review B 108, L201405 (2023)

Charge density wave and Weyl Semimetal phase in Y$_2$Ir$_2$O$_7$

Authors: Abhishek Juyal, Vinod Kumar Dwivedi, Sonu Verma, Shibabrata Nandi, Amit Agarwal, Soumik Mukhopadhyay

Abstract: The subtle interplay of band topology and symmetry broken phase, induced by electron correlations, has immense contemporary relevance and potentially offers novel physical insights. Here, we demonstrate charge density wave (CDW) in bulk Y$_2$Ir$_2$O$_7$ for T < 10 K, and its transition to the Weyl semimetal (WSM) phase at higher temperatures. The CDW phase is evidenced by a) current induced nonlin… ▽ More The subtle interplay of band topology and symmetry broken phase, induced by electron correlations, has immense contemporary relevance and potentially offers novel physical insights. Here, we demonstrate charge density wave (CDW) in bulk Y$_2$Ir$_2$O$_7$ for T < 10 K, and its transition to the Weyl semimetal (WSM) phase at higher temperatures. The CDW phase is evidenced by a) current induced nonlinear conductivity with negative differential resistance at low temperature, b) low frequency Debye like dielectric relaxation at low temperature with a large dielectric constant, and c) an anomaly in the temperature dependence of the thermal expansion coefficient. The WSM phase at higher temperature is confirmed by the DC and AC transport measurements which show an inductive response at low frequencies. More interestingly, we show that by reducing the crystallite size, the low temperature CDW phase can be eliminated leading to the restoration of the WSM phase. △ Less

Submitted 24 June, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Comments: 5 pages, 4 figures; minor corrections

Journal ref: Phys. Rev. B 106, 155149 (2022)

Nonlinear anomalous Hall effects probe topological phase-transitions in twisted double bilayer graphene

Authors: Atasi Chakraborty, Kamal Das, Subhajit Sinha, Pratap Chandra Adak, Mandar M. Deshmukh, Amit Agarwal

Abstract: Nonlinear anomalous Hall effect is the Berry curvature dipole induced second-order Hall voltage or temperature difference in response to a longitudinal electric field or temperature gradient. These are the prominent Hall responses in time reversal symmetric systems. Here, we investigate the family of second-order nonlinear anomalous Hall effects, the electrical, thermoelectric and thermal nonlinea… ▽ More Nonlinear anomalous Hall effect is the Berry curvature dipole induced second-order Hall voltage or temperature difference in response to a longitudinal electric field or temperature gradient. These are the prominent Hall responses in time reversal symmetric systems. Here, we investigate the family of second-order nonlinear anomalous Hall effects, the electrical, thermoelectric and thermal nonlinear Hall effects in the moiré system of twisted double bilayer graphene. We demonstrate that the nonlinear anomalous Hall signals can be used to probe the topological phase-transitions in moiré systems, induced by a perpendicular electric field. Specifically, we show that the whole family of nonlinear anomalous Hall responses undergo a sign reversal across a topological phase-transition. △ Less

Submitted 30 May, 2022; originally announced May 2022.

Comments: 12 pages, 6 figures, Comments are welcome

Journal ref: 2D materials, 2022