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Investigation of Low Frequency Noise in CryoCMOS devices through Statistical Single Defect Spectroscopy
Authors:
Edoardo Catapano,
Anirudh Varanasi,
Philippe Roussel,
Robin Degraeve,
Yusuke Higashi,
Ruben Asanovski,
Ben Kaczer,
Javier Diaz Fortuny,
Michael Waltl,
Valeri Afanasiev,
Kristiaan De Greve,
Alexander Grill
Abstract:
High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide defects are expected to freeze out at cryogenic temperatures. Nevertheless, it has been repeatedly observed that 1/f noise deviates from the predicted behaviour a…
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High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide defects are expected to freeze out at cryogenic temperatures. Nevertheless, it has been repeatedly observed that 1/f noise deviates from the predicted behaviour and that gate oxide defects are still active around 4.2 K, producing random telegraph noise. In this paper, we probe single gate oxide defects in 2500 nMOS devices down to 5 K in order to investigate the origin of 1/f noise in CryoCMOS devices. From our results, it is clear that the number of defects active at cryogenic temperatures resulting in random telegraph noise is larger than at 300 K. Threshold voltage shifts due to charged defects are shown to be exponentially distributed, with different modalities across temperatures and biases: from monomodal at 300 K to trimodal below 100 K. The third mode is interpreted in the framework of percolation theory. By fitting these distributions, it is shown that more than 80% of the detected defects belongs to the oxide bulk. Afterwards, starting from the raw data in time domain, we reconstruct the low frequency noise spectra, highlighting the contributions of defects belonging to different branches and, therefore, to different oxide layers. This analysis shows that, although interface traps and large defects associated with the third mode are the main sources of 1/f noise at 5 K, bulk oxide defects still contribute significantly to low-frequency noise at cryogenic temperatures. Finally, we show that defect time constants and step heights are uncorrelated, proving that elastic tunnelling model for charge trapping is not accurate.
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Submitted 6 May, 2025;
originally announced May 2025.
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An efficient direct band-gap transition in germanium by three-dimensional strain
Authors:
Simon Mellaerts,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand - using computational predictive methods - which strain tensor leads to the desired…
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Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand - using computational predictive methods - which strain tensor leads to the desired properties. In this work, we study germanium (Ge) under an isotropic 3D strain on the basis of first-principle methods. The transport and optical properties are studied by a fully ab initio Boltzmann transport equation and many-body Bethe-Salpeter equation (BSE) approach, respectively. Our findings show that a direct band gap in Ge could be realized with only 0.34% triaxial tensile strain (negative pressure) and without the challenges associated with Sn doping. At the same time a significant increase in refractive index and carrier mobility - particularly for electrons - is observed. These results demonstrate that there is a huge potential in exploring the 3D deformation space for semiconductors - and potentially many other materials - in order to optimize their properties.
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Submitted 8 June, 2021; v1 submitted 24 February, 2021;
originally announced February 2021.
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Quarter-filled Kane-Mele Hubbard model: Dirac half-metals
Authors:
Simon Mellaerts,
Ruishen Meng,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article…
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Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article discusses predictions for intrinsic DHMs and identifies them as realizations of the Kane-Mele Hubbard model at quarter filling. This proposed unification contributes to a firmer understanding of these materials and suggests pathways for the discovery of new DHM systems.
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Submitted 9 January, 2021;
originally announced January 2021.
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Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene
Authors:
Simon Mellaerts,
Ruishen Meng,
Mariela Menghini,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the realization of a room-temperature magnetic Chern insulator is to find a structurally stable material with a sufficiently large energy gap and Curie temperature that…
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The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the realization of a room-temperature magnetic Chern insulator is to find a structurally stable material with a sufficiently large energy gap and Curie temperature that can be easily implemented in electronic devices. This work based on first-principle methods shows that a single atomic layer of V2O3 with honeycomb-kagome (HK) lattice is structurally stable with a spin-polarized Dirac cone which gives rise to a room-temperature QAHE by the existence of an atomic on-site spin-orbit coupling (SOC). Moreover, by a strain and substrate study, it was found that the quantum anomalous Hall system is robust against small deformations and can be supported by a graphene substrate.
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Submitted 8 June, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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Comment on "Unveiling the double-well energy landscape in a ferroelectric layer"
Authors:
J. A. Kittl,
M. Houssa,
V. V. Afanasiev,
J. -P. Locquet
Abstract:
Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the claims of lack of hysteresis and s-curve trajectory are unfounded.
Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the claims of lack of hysteresis and s-curve trajectory are unfounded.
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Submitted 1 March, 2020;
originally announced March 2020.
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A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer
Authors:
J. A. Kittl,
J. -P. Locquet,
M. Houssa,
V. V. Afanasiev
Abstract:
We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low polarization state without FE polarization switching (non-switching), showing that the concept is fundamentally flawed and unphysical. We also analyze experimental eviden…
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We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low polarization state without FE polarization switching (non-switching), showing that the concept is fundamentally flawed and unphysical. We also analyze experimental evidence concluding that there is no data supporting the need to invoke such stabilization; rather, conventional models of ferroelectric polarization switching suffice to account for the effects observed. We analyze experimental evidence that at least in some of the model systems for which this effect has been claimed, categorically rule out stabilized non-switching NC. Microscopic measurements recently published as supporting non-switching stabilized NC actually rule them out, since the ferroelectric in a stack sandwiched between two dielectric layers was found to be in a mixed domain state (high polarizations within each domain) rather than in the low polarization state predicted by non-switching stabilized NC models. Nonetheless, since stabilized NC (corresponding to a minimum in free energy) is not physically impossible, it would be useful to move the research efforts to investigating scenarios and systems in which this effect is possible and expected and assess whether they are useful and practical for low power electronics.
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Submitted 1 March, 2020;
originally announced March 2020.
