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Hole-doping induced ferromagnetism in 2D materials
Authors:
R. Meng,
L. M. C. Pereira,
J. P. Locquet,
V. V. Afanas'ev,
G. Pourtois,
M. Houssa
Abstract:
Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequ…
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Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequently performed, in order to identify alternative possible atomic structures of the eligible candidates, and 122 materials exhibiting a hole-doping induced ferromagnetism are identified. Their energetic and dynamic stability, as well as their magnetic properties under hole doping are investigated systematically. Half of these 2D materials are metal halides, followed by chalcogenides, oxides and nitrides, some of them having predicted Curie temperatures above 300 K. The exchange interactions responsible for the ferromagnetic order in these 2D materials are also discussed. This work not only provides theoretical insights into hole-doped 2D ferromagnetic materials, but also enriches the family of 2D magnetic materials for possible spintronic applications.
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Submitted 5 April, 2022; v1 submitted 4 April, 2022;
originally announced April 2022.
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The origin of negative charging in amorphous Al$_2$O$_3$ films: The role of native defects
Authors:
Oliver A. Dicks,
Jonathon Cottom,
Alexander L. Shluger,
Valeri V. Afanas'ev
Abstract:
Amorphous aluminum oxide Al$_2$O$_3$ (a-Al$_2$O$_3$) layers grown by various deposition techniques contain a significant density of negative charges. In spite of several experimental and theoretical studies, the origin of these charges still remains unclear. We report the results of extensive Density Functional Theory (DFT) calculations of native defects - O and Al vacancies and interstitials, as…
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Amorphous aluminum oxide Al$_2$O$_3$ (a-Al$_2$O$_3$) layers grown by various deposition techniques contain a significant density of negative charges. In spite of several experimental and theoretical studies, the origin of these charges still remains unclear. We report the results of extensive Density Functional Theory (DFT) calculations of native defects - O and Al vacancies and interstitials, as well as H interstitial centers - in different charge states in both crystalline $α$-Al$_2$O$_3$ and in a-Al$_2$O$_3$. The results demonstrate that both the charging process and the energy distribution of traps responsible for negative charging of a-Al$_2$O$_3$ films [M. B. Zahid et al., IEEE Trans. Electron Devices 57, 2907 (2010)] can be understood assuming that the negatively charged O$_{\textrm{i}}$ and V$_{\textrm{Al}}$ defects are nearly compensated by the positively charged H$_{\textrm{i}}$, V$_{\textrm{O}}$ and Al$_{\textrm{i}}$ defects in as prepared samples. Following electron injection, the states of Al$_{\textrm{i}}$, V$_{\textrm{O}}$ or H$_{\textrm{i}}$ in the band gap become occupied by electrons and sample becomes negatively charged. The optical excitation energies from these states into the oxide conduction band agree with the results of exhaustive photo-depopulation spectroscopy (EPDS) measurements [M. B. Zahid et al., IEEE Trans. Electron Devices 57, 2907 (2010)]. This new understanding of the origin of negative charging of a-Al$_2$O$_3$ films is important for further development of nanoelectronic devices and solar cells.
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Submitted 4 March, 2019; v1 submitted 1 November, 2018;
originally announced November 2018.
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Impact of nitrogen incorporation on interface states in (100)Si/HfO2
Authors:
Y. G. Fedorenko,
L. Truong,
V. V. Afanas'ev,
A. Stesmans,
Z. Zhang,
S. A. Campbell
Abstract:
The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The nitrogen in the (100)Si/HfO2 entity is found to increase the trap density, most significantly, in the upper part of Si band gap, in which energy range nitrogen incorp…
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The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The nitrogen in the (100)Si/HfO2 entity is found to increase the trap density, most significantly, in the upper part of Si band gap, in which energy range nitrogen incorporation prevents passivation of interface traps by hydrogen. At the same time, passivation of fast interface traps in the lower part of the band gap proceeds efficiently, provided the thickness of the nitrogen containing interlayer is kept within a few monolayers. The minimal interface trap density below the midgap achieved after passivation in H2 is dominated by the presence of slow N-related states, likely located in the insulator. As inferred from capacitance-voltage and ac conductance analysis, the lowest density of electrically active defects [(8-9)x10 10 eV-1cm-2 at 0.4-0.5 eV from the top of the Si valence band edge] is achieved both in the N-free and N-containing (100)Si/HfO2 structuresafter post-deposition anneal at 800C in (N2+5%O2) followed by passivation in molecular hydrogen at 400C for 30 min.
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Submitted 25 June, 2014;
originally announced June 2014.
