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Enhancement of the lifetime of metastable states in Er-doped Si nanocrystals by external coloured noise
Authors:
Stefano Spezia,
Davide Valenti,
Dominique Persano Adorno,
Bernardo Spagnolo
Abstract:
The changes in the lifetime of a metastable energy level in Er-doped Si nanocrystals in the presence of an external source of colored noise are analyzed for different values of noise intensity and correlation time. Exciton dynamics is simulated by a set of phenomenological rate equations which take into account all the possible phenomena inherent to the energy states of Si nanocrystals and Er…
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The changes in the lifetime of a metastable energy level in Er-doped Si nanocrystals in the presence of an external source of colored noise are analyzed for different values of noise intensity and correlation time. Exciton dynamics is simulated by a set of phenomenological rate equations which take into account all the possible phenomena inherent to the energy states of Si nanocrystals and Er$^{3+}$ ions in the host material of Si oxide. The electronic deexcitation is studied by examining the decay of the initial population of the Er atoms in the first excitation level $^4$I$_{13/2}$ through the fluorescence and the cooperative upconversion by energy transfer. Our results show that the deexcitation process of the level $^4$I$_{13/2}$ is slowed down within wide ranges of noise intensity and correlation time. Moreover, a nonmonotonic behavior of the lifetime with the amplitude of the fluctuations is found, characterized by a maximum variation for values of the noise correlation time comparable to the deexcitation time. The indirect influence of the colored noise on the efficiency of the energy transfer upconversion activated from the level $^4$I$_{13/2}$ is also discussed.
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Submitted 1 October, 2014; v1 submitted 8 July, 2014;
originally announced July 2014.
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Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise
Authors:
Stefano Spezia,
Dominique Persano Adorno,
Nicola Pizzolato,
Bernardo Spagnolo
Abstract:
The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field is investigated. Two different sources of fluctuations are considered: (i) a symmetric dichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show, in both cases, an enhancement of the spin relaxation time by increasing the amplitude of the external noise. Moreover…
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The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field is investigated. Two different sources of fluctuations are considered: (i) a symmetric dichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show, in both cases, an enhancement of the spin relaxation time by increasing the amplitude of the external noise. Moreover, we find that the electron spin lifetime versus the noise correlation time: (i) increases up to a plateau in the case of dichotomous random fluctuations, and (ii) shows a nonmonotonic behaviour with a maximum in the case of bulks subjected to a Gaussian correlated noise.
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Submitted 28 November, 2013; v1 submitted 26 November, 2013;
originally announced November 2013.
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New insights into electron spin dynamics in the presence of correlated noise
Authors:
Stefano Spezia,
Dominique Persano Adorno,
Nicola Pizzolato,
Bernardo Spagnolo
Abstract:
The changes of the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and correlation time. Electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons…
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The changes of the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and correlation time. Electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin depolarization is studied by examinating the decay of the initial spin polarization of the conduction electrons through the D'yakonov-Perel process, the only relevant relaxation mechanism in III-V crystals. Our results show that, for electric field amplitude lower than the Gunn field, the dephasing length shortens with the increasing of the noise intensity. Moreover, a nonmonotonic behavior of spin depolarization length with the noise correlation time is found, characterized by a maximum variation for values of noise correlation time comparable with the dephasing time. Instead, in high field conditions, we find that, critically depending on the noise correlation time, external fluctuations can positively affect the relaxation length. The influence of the inclusion of the electron-electron scattering mechanism is also shown and discussed.
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Submitted 24 December, 2011; v1 submitted 2 December, 2011;
originally announced December 2011.
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Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
Authors:
Stefano Spezia,
Dominique Persano Adorno,
Nicola Pizzolato,
Bernardo Spagnolo
Abstract:
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density ($10^{13}<n<10^{16}$cm$^{-3}$). The decay of the initial non-equilibrium spin polarization of the conduction electrons is investigated as a function of the amplitude o…
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A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density ($10^{13}<n<10^{16}$cm$^{-3}$). The decay of the initial non-equilibrium spin polarization of the conduction electrons is investigated as a function of the amplitude of the driving static electric field, ranging between 0.1 and 6 kV/cm, by considering the spin dynamics of electrons in both the $Γ$ and the upper valleys of the semiconductor. Doping density considerably affects spin relaxation at low temperature and weak intensity of the driving electric field. At high values of the electric field, the strong spin-orbit coupling of electrons in the $L$-valleys significantly reduces the average spin polarization lifetime, but, unexpectedly, for field amplitudes greater than 2.5 kV/cm, the spin lifetime increases with the lattice temperature. Our numerical findings are validated by a good agreement with the available experimental results and with calculations recently obtained by a different theoretical approach.
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Submitted 17 December, 2011; v1 submitted 28 May, 2011;
originally announced May 2011.
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Doping dependence of spin dynamics of drifting electrons in GaAs bulks
Authors:
Stefano Spezia,
Dominique Persano Adorno,
Nicola Pizzolato,
Bernardo Spagnolo
Abstract:
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxatio…
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We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing the lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} - 10^{16} cm^{-3}, for different values of the amplitude of the static electric field (0.1 - 1.0 kV/cm). We find an increase of the electron spin lifetime as a function of the doping density, more evident for lattice temperatures lower than 150 K. Moreover, at very low intensities of the driving field, the spin depolarization length shows a nonmonotonic behaviour with the density. At the room temperature, the spin lifetimes and depolarization lengths are nearly independent on the doping density. The underlying physics is analyzed.
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Submitted 17 June, 2012; v1 submitted 25 August, 2010;
originally announced August 2010.
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Temperature dependence of spin depolarization of drifting electrons in n-type GaAs bulks
Authors:
Stefano Spezia,
Dominique Persano Adorno,
Nicola Pizzolato,
Bernardo Spagnolo
Abstract:
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of spin polarization and relaxation, by taking into account intravalley and intervalley scattering phenomena of the hot electrons in the medium. Spin relaxation lengt…
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The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of spin polarization and relaxation, by taking into account intravalley and intervalley scattering phenomena of the hot electrons in the medium. Spin relaxation lengths and times are computed through the D'yakonov-Perel process, which is the more relevant spin relaxation mechanism in the regime of interest (10 < T < 300 K). The decay of the initial spin polarization of the conduction electrons is calculated as a function of the distance in the presence of a static electric field varying in the range 0.1 - 2 kV/cm. We find that the electron spin depolarization lengths and times have a nonmonotonic dependence on both the lattice temperature and the electric field amplitude.
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Submitted 17 December, 2011; v1 submitted 10 March, 2010;
originally announced March 2010.
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Noise influence on electron dynamics in semiconductors driven by a periodic electric field
Authors:
D. Persano Adorno,
N. Pizzolato,
B. Spagnolo
Abstract:
Studies about the constructive aspects of noise and fluctuations in different non-linear systems have shown that the addition of external noise to systems with an intrinsic noise may result in a less noisy response. Recently, the possibility to reduce the diffusion noise in semiconductor bulk materials by adding a random fluctuating contribution to the driving static electric field has been test…
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Studies about the constructive aspects of noise and fluctuations in different non-linear systems have shown that the addition of external noise to systems with an intrinsic noise may result in a less noisy response. Recently, the possibility to reduce the diffusion noise in semiconductor bulk materials by adding a random fluctuating contribution to the driving static electric field has been tested. The present work extends the previous theories by considering the noise-induced effects on the electron transport dynamics in low-doped n-type GaAs samples driven by a high-frequency periodic electric field (cyclostationary conditions). By means of Monte Carlo simulations, we calculate the changes in the spectral density of the electron velocity fluctuations caused by the addition of an external correlated noise source. The results reported in this paper confirm that, under specific conditions, the presence of a fluctuating component added to an oscillating electric field can reduce the total noise power. Furthermore, we find a nonlinear behaviour of the spectral density with the noise intensity. Our study reveals that, critically depending on the external noise correlation time, the dynamical response of electrons driven by a periodic electric field receives a benefit by the constructive interplay between the fluctuating field and the intrinsic noise of the system.
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Submitted 9 October, 2008;
originally announced October 2008.
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External noise effects on the electron velocity fluctuations in semiconductors
Authors:
D. Persano Adorno,
N. Pizzolato,
B. Spagnolo
Abstract:
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We sho…
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We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover this random field can cause a suppression of the total noise power.
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Submitted 6 October, 2008;
originally announced October 2008.
