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Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits
Authors:
C. Kurter,
C. E. Murray,
R. T. Gordon,
B. B. Wymore,
M. Sandberg,
R. M. Shelby,
A. Eddins,
V. P. Adiga,
A. D. K. Finck,
E. Rivera,
A. A. Stabile,
B. Trimm,
B. Wacaser,
K. Balakrishnan,
A. Pyzyna,
J. Sleight,
M. Steffen,
K. Rodbell
Abstract:
Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information…
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Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information about the quality of JJ barrier. We find the tunneling rate of the nonequilibrium quasiparticles to be sensitive to the choice of the shunting capacitor material and their geometry in qubits. In some devices, we observe an anomalous temperature dependence of the QPT rate below 100 mK that deviates from a constant background associated with non-equilibrium quasiparticles. We speculate that this behavior is caused by high transmission sites/defects within the oxide barriers of the JJs, leading to spatially localized subgap states. We model this by assuming that such defects generate regions with a smaller effective gap. Our results present a unique in situ characterization tool to assess the uniformity of tunnel barriers in qubit junctions and shed light on how quasiparticles can interact with various elements of the qubit circuit.
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Submitted 4 February, 2022; v1 submitted 21 June, 2021;
originally announced June 2021.
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Effects of surface treatments on flux tunable transmon qubits
Authors:
M. Mergenthaler,
C. Müller,
M. Ganzhorn,
S. Paredes,
P. Müller,
G. Salis,
V. P. Adiga,
M. Brink,
M. Sandberg,
J. B. Hertzberg,
S. Filipp,
A. Fuhrer
Abstract:
One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been ide…
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One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been identified as sources of noise and dissipation in solid-state quantum devices. Here, we use an ultra-high vacuum package to study the impact of vacuum loading, UV-light exposure and ion irradiation treatments on coherence and slow parameter fluctuations of flux tunable superconducting transmon qubits. We analyse the effects of each of these surface treatments by comparing averages over many individual qubits and measurements before and after treatment. The treatments studied do not significantly impact the relaxation rate $Γ_1$ and the echo dephasing rate $Γ_2^\textrm{e}$, except for Ne ion bombardment which reduces $Γ_1$. In contrast, flux noise parameters are improved by removing magnetic adsorbates from the chip surfaces with UV-light and NH$_3$ treatments. Additionally, we demonstrate that SF$_6$ ion bombardment can be used to adjust qubit frequencies in-situ and post fabrication without affecting qubit coherence at the sweet spot.
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Submitted 14 March, 2021;
originally announced March 2021.
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Investigating microwave loss of SiGe using superconducting transmon qubits
Authors:
Martin Sandberg,
Vivekananda P. Adiga,
Markus Brink,
Cihan Kurter,
Conal Murray,
Marinus Hopstaken,
John Bruley,
Jason Orcutt,
Hanhee Paik
Abstract:
Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of Si…
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Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 $μ$s, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state of the art performance of superconducting quantum circuits.
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Submitted 5 March, 2021;
originally announced March 2021.
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Ultrahigh Vacuum Packaging and Surface Cleaning for Quantum Devices
Authors:
M. Mergenthaler,
S. Paredes,
P. Müller,
C. Müller,
S. Filipp,
M. Sandberg,
J. Hertzberg,
V. P. Adiga,
M. Brink,
A. Fuhrer
Abstract:
We describe design, implementation and performance of an ultra-high vacuum (UHV) package for superconducting qubit chips or other surface sensitive quantum devices. The UHV loading procedure allows for annealing, ultra-violet light irradiation, ion milling and surface passivation of quantum devices before sealing them into a measurement package. The package retains vacuum during the transfer to cr…
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We describe design, implementation and performance of an ultra-high vacuum (UHV) package for superconducting qubit chips or other surface sensitive quantum devices. The UHV loading procedure allows for annealing, ultra-violet light irradiation, ion milling and surface passivation of quantum devices before sealing them into a measurement package. The package retains vacuum during the transfer to cryogenic temperatures by active pumping with a titanium getter layer. We characterize the treatment capabilities of the system and present measurements of flux tunable qubits with an average T$_1=84~μ$s and T$^{echo}_2=134~μ$s after vacuum-loading these samples into a bottom loading dilution refrigerator in the UHV-package.
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Submitted 22 October, 2020;
originally announced October 2020.
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Laser-annealing Josephson junctions for yielding scaled-up superconducting quantum processors
Authors:
Jared B. Hertzberg,
Eric J. Zhang,
Sami Rosenblatt,
Easwar Magesan,
John A. Smolin,
Jeng-Bang Yau,
Vivekananda P. Adiga,
Martin Sandberg,
Markus Brink,
Jerry M. Chow,
Jason S. Orcutt
Abstract:
As superconducting quantum circuits scale to larger sizes, the problem of frequency crowding proves a formidable task. Here we present a solution for this problem in fixed-frequency qubit architectures. By systematically adjusting qubit frequencies post-fabrication, we show a nearly ten-fold improvement in the precision of setting qubit frequencies. To assess scalability, we identify the types of…
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As superconducting quantum circuits scale to larger sizes, the problem of frequency crowding proves a formidable task. Here we present a solution for this problem in fixed-frequency qubit architectures. By systematically adjusting qubit frequencies post-fabrication, we show a nearly ten-fold improvement in the precision of setting qubit frequencies. To assess scalability, we identify the types of 'frequency collisions' that will impair a transmon qubit and cross-resonance gate architecture. Using statistical modeling, we compute the probability of evading all such conditions, as a function of qubit frequency precision. We find that without post-fabrication tuning, the probability of finding a workable lattice quickly approaches 0. However with the demonstrated precisions it is possible to find collision-free lattices with favorable yield. These techniques and models are currently employed in available quantum systems and will be indispensable as systems continue to scale to larger sizes.
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Submitted 23 September, 2020; v1 submitted 1 September, 2020;
originally announced September 2020.
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Active protection of a superconducting qubit with an interferometric Josephson isolator
Authors:
Baleegh Abdo,
Nicholas T. Bronn,
Oblesh Jinka,
Salvatore Olivadese,
Antonio D. Corcoles,
Vivekananda P. Adiga,
Markus Brink,
Russell E. Lake,
Xian Wu,
David P. Pappas,
Jerry M. Chow
Abstract:
Nonreciprocal microwave devices play several critical roles in high-fidelity, quantum-nondemolition (QND) measurement schemes. They separate input from output, impose unidirectional routing of readout signals, and protect the quantum systems from unwanted noise originated by the output chain. However, state-of-the-art, cryogenic circulators and isolators are disadvantageous in scalable superconduc…
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Nonreciprocal microwave devices play several critical roles in high-fidelity, quantum-nondemolition (QND) measurement schemes. They separate input from output, impose unidirectional routing of readout signals, and protect the quantum systems from unwanted noise originated by the output chain. However, state-of-the-art, cryogenic circulators and isolators are disadvantageous in scalable superconducting quantum processors because they use magnetic materials and strong magnetic fields. Here, we realize an active isolator formed by coupling two nondegenerate Josephson mixers in an interferometric scheme. Nonreciprocity is generated by applying a phase gradient between the same-frequency pumps feeding the Josephson mixers, which play the role of the magnetic field in a Faraday medium. To demonstrate the applicability of this Josephson-based isolator for quantum measurements, we incorporate it into the output line of a superconducting qubit, coupled to a fast resonator and a Purcell filter. We also utilize a wideband, superconducting directional coupler for coupling the readout signals into and out of the qubit-resonator system and a quantum-limited Josephson amplifier for boosting the readout fidelity. By using this novel quantum setup, we demonstrate fast, high-fidelity, QND measurements of the qubit while providing more than 20 dB of protection against amplified noise reflected off the Josephson amplifier.
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Submitted 16 October, 2018;
originally announced October 2018.
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Evanescent field optical readout of graphene mechanical motion at room temperature
Authors:
Robin M. Cole,
George A. Brawley,
Vivek P. Adiga,
Roberto De Alba,
Jeevak M. Parpia,
Bojan Ilic,
Harold G. Craighead,
Warwick P. Bowen
Abstract:
Graphene mechanical resonators have recently attracted considerable attention for use in precision force and mass sensing applications. To date, readout of their oscillatory motion has typically required cryogenic conditions to achieve high sensitivity, restricting their range of applications. Here we report the first demonstration of evanescent optical readout of graphene motion, using a scheme w…
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Graphene mechanical resonators have recently attracted considerable attention for use in precision force and mass sensing applications. To date, readout of their oscillatory motion has typically required cryogenic conditions to achieve high sensitivity, restricting their range of applications. Here we report the first demonstration of evanescent optical readout of graphene motion, using a scheme which does not require cryogenic conditions and exhibits enhanced sensitivity and bandwidth at room temperature. We utilise a high $Q$ microsphere to enable evanescent readout of a 70 $μ$m diameter graphene drum resonator with a signal-to-noise ratio of greater than 25 dB, corresponding to a transduction sensitivity of $S_{N}^{1/2} = $ 2.6 $\times 10^{-13}$ m $\mathrm{Hz}^{-1/2}$. The sensitivity of force measurements using this resonator is limited by the thermal noise driving the resonator, corresponding to a force sensitivity of $F_{min} = 1.5 \times 10^{-16}$ N ${\mathrm{Hz}}^{-1/2}$ with a bandwidth of 35 kHz at room temperature (T = 300 K). Measurements on a 30 $μ$m graphene drum had sufficient sensitivity to resolve the lowest three thermally driven mechanical resonances.
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Submitted 7 August, 2014; v1 submitted 6 August, 2014;
originally announced August 2014.
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Simultaneous Electrical and Optical Readout of Graphene-Coated High Q Silicon Nitride Resonators
Authors:
V. P. Adiga,
R. De Alba,
I. R. Storch,
P. A. Yu,
B. Ilic,
R. A. Barton,
S. Lee,
J. Hone,
P. L. McEuen,
J. M. Parpia,
H. G. Craighead
Abstract:
We have fabricated and tested mechanical resonators consisting of a single-atomic-layer of graphene deposited on suspended silicon nitride membranes. With the addition of the graphene layer we retain the desirable mechanical properties of silicon nitride but utilize the electrical and optical properties of graphene to transduce resonant motion by both optical and electrical means. By positioning t…
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We have fabricated and tested mechanical resonators consisting of a single-atomic-layer of graphene deposited on suspended silicon nitride membranes. With the addition of the graphene layer we retain the desirable mechanical properties of silicon nitride but utilize the electrical and optical properties of graphene to transduce resonant motion by both optical and electrical means. By positioning the graphene-on-silicon-nitride drums in a tunable optical cavity we observe position dependent damping and resonant frequency control of the devices due to optical absorption by graphene.
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Submitted 9 July, 2013;
originally announced July 2013.
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Graphene Metallization of High-Stress Silicon Nitride Resonators for Electrical Integration
Authors:
Sunwoo Lee,
Vivekananda P. Adiga,
Robert A. Barton,
Arend van der Zande,
Gwan-Hyoung Lee,
B. Rob Ilic,
Alexander Gondarenko,
Jeevak M. Parpia,
Harold G. Craighead,
James Hone
Abstract:
High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing and signal processing. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conducti…
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High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing and signal processing. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30 % on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electro-static tuning of the frequency by up to 1 % per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.
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Submitted 21 May, 2013;
originally announced May 2013.
