Showing 1–7 of 7 results for author: Adell, M

Formation of Epitaxial MnBi Layers on (Ga,Mn)As

Authors: J. Adell, M. Adell, I. Ulfat, L. Ilver, J. Sadowski, J. Kanski

Abstract: The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of Mn… ▽ More The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before clear surface degradation occurs. △ Less

Submitted 6 March, 2009; originally announced March 2009.

Comments: 18 pages, 5 figures

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping

Authors: J. Sadowski, J. Z. Domagala, V. Osinniy, J. Kanski, M. Adell, L. Ilver, C. Hernandez, F. Terki, S. Charar, D. Maude

Abstract: Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic capping at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn intersti… ▽ More Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic capping at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn interstitials from GaMnAs volume. △ Less

Submitted 29 January, 2006; v1 submitted 26 January, 2006; originally announced January 2006.

Comments: 17 pages including 6 figures

Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers

Authors: V. Stanciu, O. Wilhelmsson, U. Bexell, M. Adell, J. Sadowski, J. Kanski, P. Warnicke, P. Svedlindh

Abstract: The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition temperature (Tc) on annealing time marks out two regions. The Tc peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second (`saturated') region the effect… ▽ More The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition temperature (Tc) on annealing time marks out two regions. The Tc peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second (`saturated') region the effect of the annealing time is more pronounced for thin samples. A right choice of the passivation medium, growth conditions along with optimal annealing parameters routinely yield Tc-values of ~ 150 K and above, regardless of the thickness of the epilayers. △ Less

Submitted 2 May, 2005; originally announced May 2005.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 72, 125324 (2005)

Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers

Authors: J. Sadowski, M. Adell, J. Kanski, L. Ilver, E. Janik, E. Lusakowska, J. Z. Domagala, R. Brucas, M. Hanson

Abstract: Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnA… ▽ More Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnAs, are smooth and well-ordered (1x2), and are well suited for continued epitaxial growth. △ Less

Submitted 4 April, 2005; v1 submitted 4 April, 2005; originally announced April 2005.

Comments: 12 pages, 4 figures

Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"

Authors: M. Adell, J. Kanski, L. Ilver, V. Stanciu, P. Svedlindh

Abstract: The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced modifications are strongly accelerated if the treatment is carried out under As capping. This means that the modification rate is not limited by the diffusion pro… ▽ More The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced modifications are strongly accelerated if the treatment is carried out under As capping. This means that the modification rate is not limited by the diffusion process, but rather by the surface trapping of the diffusing species. △ Less

Submitted 1 December, 2004; originally announced December 2004.

Comments: 4 pages, 1 figure

Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

Authors: M. Adell, V. Stanciu, J. Kanski, L. Ilver, J. Sadowski, J. Z. Domagala, P. Svedlindh, F. Terki, C. Hernandez, S. Charar

Abstract: We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier. We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier. △ Less

Submitted 15 November, 2004; v1 submitted 24 June, 2004; originally announced June 2004.

Comments: 13 pages, 4 figures

Photoemission studies of the annealing induced modifications of (Ga,Mn)As

Authors: M. Adell, L. Ilver, J. Kanski, J. Sadowski, R. Mathieu

Abstract: Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the M… ▽ More Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the Mn3d spectrum is modified by the annealing treatments △ Less

Submitted 16 April, 2004; originally announced April 2004.

Comments: 4 pages, 5 figures