Showing 1–10 of 10 results for author: Achal, R

Structural Control of Atomic Silicon Wires

Authors: Furkan M. Altincicek, Christopher C. Leon, Taras Chutora, Max Yuan, Roshan Achal, Lucian Livadaru, Jason Pitters, Robert Wolkow

Abstract: Bare Si(100)-2$\times$1 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations equivalent in energy. The relatively low energy barrier between these configurations allows dimers to flip rapidly and uncontrollably unless stabilized by surface defects or observed at low temperatures due to reduced t… ▽ More Bare Si(100)-2$\times$1 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations equivalent in energy. The relatively low energy barrier between these configurations allows dimers to flip rapidly and uncontrollably unless stabilized by surface defects or observed at low temperatures due to reduced thermal energy using Scanning Tunneling Microscopy (STM). This rapid flipping results in a time-averaged symmetric appearance under STM. In this study, we investigated variable length buckled dimer wires on the hydrogenated Si(100) surface composed of silicon dangling bonds for the first time. We demonstrate that on degenerate p-type silicon at 4.5 K, the rapid switching of these dimers can be frozen at low scanning biases. It is shown that the stability of a fixed buckled configuration increases with wire length. Such buckled wires can however be controllably flipped using a bias pulse. A line as long as 37 dimers was repeatedly uniformly flipped by a single pulse delivered near one terminus of the wire. The tip-directed flipping of a particular wire does not switch adjacent wires, suggesting binary wires can make well isolated rewritable binary memory elements. Furthermore, at sufficiently high biases switching generates telegraph noise that could be of utility for random number generation. The integration and encapsulation of these wires with previously described silicon dangling bond-made logic gates and binary wires might allow for self contained actuation and readout without requiring any role of an STM tip. △ Less

Submitted 10 April, 2025; originally announced April 2025.

Comments: 15 pages, 5 figures

Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length

Authors: Furkan M. Altincicek, Lucian Livadaru, Christopher C. Leon, Taras Chutora, Max Yuan, Roshan Achal, Jeremiah Croshaw, Jason Pitters, Robert Wolkow

Abstract: Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wires are much more stable than wires composed of individual dangling bonds. Dimer wires composed of 1 to 5 dimers were intentionally fabricated and cha… ▽ More Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wires are much more stable than wires composed of individual dangling bonds. Dimer wires composed of 1 to 5 dimers were intentionally fabricated and characterised by STM techniques combined with density functional theory to provide detailed insights into geometric and electronic structure. Structural and dynamic qualities displayed by short wires were shown to be similar to the characteristics of a relatively long 37 dimer wire. Rather than adding two states into the band gap, experiment and theory reveal that each dimer adds one empty state into the gap and one filled state into the valence bands. Coupling among these states provides a conduction pathway with small bulk coupling. △ Less

Submitted 15 November, 2024; originally announced November 2024.

Comments: 14 pages, 5 figures

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage

Authors: Roshan Achal, Mohammad Rashidi, Jeremiah Croshaw, Taleana Huff, Robert A. Wolkow

Abstract: Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum computation, and data storage all rely on a well-developed understanding of materials at the atomic scale. Here, we report a versatile scanning tunneling microscope (STM) charge characterization technique, which reduces… ▽ More Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum computation, and data storage all rely on a well-developed understanding of materials at the atomic scale. Here, we report a versatile scanning tunneling microscope (STM) charge characterization technique, which reduces the influence of the typically perturbative STM tip field, to develop this understanding even further. Using this technique, we can now observe single molecule binding events to atomically defined reactive sites (fabricated on a hydrogen-terminated silicon surface) through electronic detection. We then developed a new error correction tool for automated hydrogen lithography, directing molecular hydrogen binding events using these sites to precisely repassivate surface dangling bonds (without the use of a scanned probe). We additionally incorporated this molecular repassivation technique as the primary rewriting mechanism in new ultra-dense atomic data storage designs (0.88 petabits per in$^{2}$). △ Less

Submitted 5 September, 2019; v1 submitted 7 July, 2019; originally announced July 2019.

Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot

Authors: Taleana Huff, Thomas Dienel, Mohammad Rashidi, Roshan Achal, Lucian Livadaru, Jeremiah Croshaw, Robert A. Wolkow

Abstract: With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact… ▽ More With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly-doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor species, we suggest is of a character more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex. △ Less

Submitted 17 June, 2019; v1 submitted 28 February, 2019; originally announced February 2019.

Journal ref: ACS Nano 13(9), 10566-10575 (2019)

Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

Authors: Mohammad Rashidi, Erika Lloyd, Taleana R. Huff, Roshan Achal, Marco Taucer, Jeremiah J. Croshaw, Robert A. Wolkow

Abstract: We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electronic time-resolved scanning tunneling microscopy (TR-STM) is employed to directly measure the carrier capture rates on the nanosecond time scale. A characteristic negative differential resistance (NDR) feature is evident i… ▽ More We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electronic time-resolved scanning tunneling microscopy (TR-STM) is employed to directly measure the carrier capture rates on the nanosecond time scale. A characteristic negative differential resistance (NDR) feature is evident in the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of DBs on both n and p-type doped samples. It is found that a common model accounts for both observations. Atom-specific Kelvin probe force microscopy (KPFM) measurements confirm the energetic position of the DB's charge transition levels, corroborating STS studies. It is shown that under different tip-induced fields the DB can be supplied from two distinct reservoirs: the bulk conduction band and/or the valence band. We measure the filling and emptying rates of the DBs in the energy regime where electrons are supplied by the bulk valence band. By adding point charges in the vicinity of a DB, Coulombic interactions are shown to shift observed STS and NDR features. △ Less

Submitted 1 November, 2017; originally announced November 2017.

All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Authors: Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow

Abstract: The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal… ▽ More The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming. Among them is all-electronic time-resolved STM, which is used in this work to study dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics. △ Less

Submitted 27 June, 2017; originally announced June 2017.

Binary Atomic Silicon Logic

Authors: Taleana Huff, Hatem Labidi, Mohammad Rashidi, Roshan Achal, Lucian Livadaru, Thomas Dienel, Jason Pitters, Robert A. Wolkow

Abstract: It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules and atoms on surfaces, challenges with patterning and limited thermal stability have remained. Here we make progress toward those challenges and demonstrate rudimentary circuit elements through the patterning of dangling… ▽ More It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules and atoms on surfaces, challenges with patterning and limited thermal stability have remained. Here we make progress toward those challenges and demonstrate rudimentary circuit elements through the patterning of dangling bonds on a hydrogen terminated silicon surface. Dangling bonds sequester electrons both spatially and energetically in the bulk band gap, circumventing short circuiting by the substrate. We deploy paired dangling bonds occupied by one movable electron to form a binary electronic building block. Inspired by earlier quantum dot-based approaches, binary information is encoded in the electron position allowing demonstration of a binary wire and an OR gate. △ Less

Submitted 19 June, 2018; v1 submitted 22 June, 2017; originally announced June 2017.

Journal ref: Nature Electronics 1(12), 636-643 (2018)

Atomic White-Out: Enabling Atomic Circuitry Through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

Authors: Taleana Huff, Hatem Labidi, Mohammad Rashidi, Mohammad Koleini, Roshan Achal, Mark Salomons, Robert A. Wolkow

Abstract: We report the mechanically induced formation of a silicon-hydrogen covalent bond and its application in engineering nanoelectronic devices. We show that using the tip of a non-contact atomic force microscope (NC-AFM), a single hydrogen atom could be vertically manipulated. When applying a localized electronic excitation, a single hydrogen atom is desorbed from the hydrogen passivated surface and c… ▽ More We report the mechanically induced formation of a silicon-hydrogen covalent bond and its application in engineering nanoelectronic devices. We show that using the tip of a non-contact atomic force microscope (NC-AFM), a single hydrogen atom could be vertically manipulated. When applying a localized electronic excitation, a single hydrogen atom is desorbed from the hydrogen passivated surface and can be transferred to the tip apex as evidenced from a unique signature in frequency shift curves. In the absence of tunnel electrons and electric field in the scanning probe microscope junction at 0 V, the hydrogen atom at the tip apex is brought very close to a silicon dangling bond, inducing the mechanical formation of a silicon-hydrogen covalent bond and the passivation of the dangling bond. The functionalized tip was used to characterize silicon dangling bonds on the hydrogen-silicon surface, was shown to enhance the scanning tunneling microscope (STM) contrast, and allowed NC-AFM imaging with atomic and chemical bond contrasts. Through examples, we show the importance of this atomic scale mechanical manipulation technique in the engineering of the emerging technology of on-surface dangling bond based nanoelectronic devices. △ Less

Submitted 19 June, 2017; v1 submitted 16 June, 2017; originally announced June 2017.

Comments: 9 pages (including references and Supplementary Section), 8 figures (5 in the main text, 3 in Supplementary)

Time-Resolved Single Dopant Charge Dynamics in Silicon

Authors: Mohammad Rashidi, Jacob Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow

Abstract: As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal t… ▽ More As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified. △ Less

Submitted 26 October, 2016; v1 submitted 3 December, 2015; originally announced December 2015.

Journal ref: Nature Communications 7, 13258 (2016)

Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface

Authors: Marco Taucer, Lucian Livadaru, Paul G. Piva, Roshan Achal, Hatem Labidi, Jason L. Pitters, Robert A. Wolkow

Abstract: Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron sensitive charge-detector. Three distinct charge states of the dangling bond, positive, neutral, and negative, are discerned. Charge state probabilities are extract… ▽ More Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron sensitive charge-detector. Three distinct charge states of the dangling bond, positive, neutral, and negative, are discerned. Charge state probabilities are extracted from the data, and analysis of current traces reveals the characteristic single electron charging dynamics. Filling rates are found to decay exponentially with increasing tip-DB separation, but are not a function of sample bias, while emptying rates show a very weak dependence on tip position, but a strong dependence on sample bias, consistent with the notion of an atomic quantum dot tunnel coupled to the tip on one side and the bulk silicon on the other. △ Less

Submitted 30 January, 2014; v1 submitted 15 May, 2013; originally announced May 2013.

Comments: 7 pages, 6 figures