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Oxygen vacancy engineering in pulsed laser deposited BaSnO$_3$ thin films on SrTiO$_3$
Authors:
Wilson Román Acevedo,
Myriam H. Aguirre,
Beatriz Noheda,
Diego Rubi
Abstract:
We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn$O_3$, BSO) thin films by precisely controlling the background oxygen pressure over a broad range from 0.0004 mbar to 0.13 mbar. The introduction of oxygen vacancies significantly alters the structural properties of BSO films, inducing a monotonic expansion of the out-of-plane lattice parame…
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We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn$O_3$, BSO) thin films by precisely controlling the background oxygen pressure over a broad range from 0.0004 mbar to 0.13 mbar. The introduction of oxygen vacancies significantly alters the structural properties of BSO films, inducing a monotonic expansion of the out-of-plane lattice parameter and cell volume as the vacancy concentration increases. The progressive formation of oxygen vacancies was spectroscopically tracked using X-ray photoelectron spectroscopy (XPS), providing direct insight into the vacancy evolution. Furthermore, we show that the oxygen stoichiometry in BSO plays a critical role in modulating the sheet resistance of BSO/LaScO$_3$ heterostructures, enabling interface metallic electron conduction. This oxygen content control offers a robust strategy to tailor the electronic properties at the interface, highlighting its potential for oxide electronics and functional interface engineering.
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Submitted 14 March, 2025;
originally announced March 2025.
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Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices
Authors:
Wilson Román Acevedo,
Myriam H. Aguirre,
Diego Rubi
Abstract:
Our study demonstrates that strong cationic segregation can occur in amorphous complex oxide memristors during electrical operation. With the help of analytic techniques, we observed that switching the electrical stimulation from voltage to current significantly prevents structural changes and cation segregation at the nanoscale, improving also the device cycle-to-cycle variability. These findings…
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Our study demonstrates that strong cationic segregation can occur in amorphous complex oxide memristors during electrical operation. With the help of analytic techniques, we observed that switching the electrical stimulation from voltage to current significantly prevents structural changes and cation segregation at the nanoscale, improving also the device cycle-to-cycle variability. These findings could contribute to the design of more reliable oxide-based memristors and underscore the crucial effect that has the type of electrical stimulation applied to the devices on their integrity and reliability.
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Submitted 25 October, 2024; v1 submitted 2 August, 2024;
originally announced August 2024.
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Multi-mem behavior at reduced voltages in La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ perovskite modified with Sm:CeO$_2$
Authors:
Wilson Román Acevedo,
Myriam H. Aguirre,
Beatriz Noheda,
Diego Rubi
Abstract:
Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices (which can change their capacitance between different non-volatile states upon the application of electrical stimulation) can significantly reduce…
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Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices (which can change their capacitance between different non-volatile states upon the application of electrical stimulation) can significantly reduce the energy consumption of bioinspired circuitry. In the present work, we study the multimem (memristive and memcapacitive) behavior of devices based on thin films of the topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) perovskite modified with Sm:Ce$O_2$ (SCO), grown on Nb:SrTiO$_{3}$ with (001) and (110) out of plane orientations. Either the self assembling at the nanoscale of both LSMCO and SCO phases or the doping with Ce(Sm) of the LSMCO perovskite were observed for different fabrication conditions and out of plane orientations. The impact of these changes on the device electrical behavior was determined. The optimum devices resulted those with (110) orientation and Ce(Sm) doping the perovskite. These devices displayed a multimem behavior with robust memcapacitance and significantly lower operation voltages (especially the RESET voltage) in comparison with devices based on pristine LSMCO. In addition, they were able to endure electrical cycling (and the concomitant perovskite topotactic redox transition between oxidized and reduced phases) without suffering nanostructural or chemical changes. We link these properties to an enhanced perovskite reducibility upon Ce(Sm) doping. Our work contributes to increase the reliability of LSMCO based multimem systems and to reduce their operating voltages closer to the 1 V threshold, which are key issues for the development of nanodevices for neuromorphic or in memory computing.
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Submitted 22 April, 2024;
originally announced April 2024.
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Coexistance of volatile and non-volatile memristive effects in phase-separated La$_{0.5}$Ca$_{0.5}$MnO$_{3}$-based devices
Authors:
G. A. Ramírez,
W. Román Acevedo,
M. Rengifo,
J. M. Nuñez,
M. H. Aguirre,
J. Briático,
D. Rubi
Abstract:
In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 K and 200 K) we measured a combinat…
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In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 K and 200 K) we measured a combination of volatile and non-volatile effects arising from the synergy between self-heating effects and ferromagnetic-metallic phase growth induced by an external electrical field. The results reported here add phase separated manganites to the list of materials which can electrically mimic, on the same device, the behavior of both neurons and synapses, a feature that might be useful for the development of neuromorphic computing hardware
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Submitted 9 November, 2022;
originally announced November 2022.
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Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$
Authors:
W. Román Acevedo,
M. H. Aguirre,
C. Ferreyra,
M. J. Sánchez,
M. Rengifo,
C. A. M. van den Bosch,
A. Aguadero,
B. Noheda,
D. Rubi
Abstract:
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. Ho…
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Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices
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Submitted 7 October, 2021;
originally announced October 2021.
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Polarons formation in Bi-deficient BaBiO$_3$
Authors:
W. Román Acevedo,
S. Di Napoli,
F. Romano,
G. Rodríguez Ruiz,
P. Nukala,
C. Quinteros,
J. Lecourt,
U. Lüders,
V. Vildosola,
D. Rubi
Abstract:
BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb doping. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it is possible to synthesize BaBiO$_3$ thin layers with Bi-vacancies above 8-10% by depositing an yttrium-stabilized zirconia capping layer. By combinin…
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BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb doping. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it is possible to synthesize BaBiO$_3$ thin layers with Bi-vacancies above 8-10% by depositing an yttrium-stabilized zirconia capping layer. By combining transport measurements with ab initio calculations we propose an scenario where the Bi-vacancies give rise to the formation of polarons and suggest that the electrical transport is dominated by the migration of these polarons trapped at Bi$^{3+}$ sites. Our work shows that cation vacancies engineering -- hardly explored to date -- appears as a promising pathway to tune the electronic and functional properties of perovskites.
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Submitted 9 April, 2021;
originally announced April 2021.
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Large memcapacitance and memristance at Nb:SrTiO$_{3}$ / La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-δ}$ Topotactic Redox Interface
Authors:
W. R. Acevedo,
C. A. M. van den Bosch,
M. H. Aguirre,
C. Acha,
A. Cavallaro,
C. Ferreyra,
M. J. Sánchez,
L. Patrone,
A. Aguadero,
D. Rubi
Abstract:
The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large…
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The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-δ}$ (LSMCO, 0 $\leq$ $δ$ $\leq$ 0.62). We demonstrate that the multi-mem behaviour originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO$_{3}$/LSMCO/Pt devices a memcapacitive effect C$_{HIGH}$/C$_{LOW}$ ~ 100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.
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Submitted 28 January, 2020; v1 submitted 14 May, 2019;
originally announced May 2019.
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Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
Authors:
Cristian Ferreyra,
Wilson Román Acevedo,
Ralph Gay,
Diego Rubi,
María José Sánchez
Abstract:
Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the motion of oxygen vacancies (OV) at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to conducting, i.e.…
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Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the motion of oxygen vacancies (OV) at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to conducting, i.e. to accomplish the resistive switching effect. The control of OV dynamics has a direct effect on the resistance changes, and therefore on different figures of memristive devices, such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow for measurements of OV dynamics, but also of theoretical studies that shed light on the involved mechanisms. Along this goal, we analize the OV dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of OV can be manipulated by using different electrical stimuli protocols to optimize device figures such as the ON/OFF ratio or the energy dissipation linked to the writing process. Analytical expressions for attained resistance values, including the high and low resistance states are derived in terms of total transferred OV in a nanoscale region of the interface. Our predictions are validated with experiments performed in Ti/La$_{1/3}$Ca$_{2/3}$MnO$_{3}$ redox memristive devices.
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Submitted 23 November, 2018;
originally announced November 2018.
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Origin of multistate resistive switching in Ti/manganite/Si$O_x$/Si heterostructures
Authors:
W. Román Acevedo,
C. Acha,
M. J. Sánchez,
P. Levy,
D. Rubi
Abstract:
We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy,…
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We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active RS oxides adds functionalities in relation to single-oxide devices. We understand that these multilevel devices are interesting and promising as their fabrication procedure is rather simple and they are fully compatible with standard Si-based electronics.
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Submitted 19 January, 2017; v1 submitted 4 November, 2016;
originally announced November 2016.
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Manganite-based three level memristive devices with self-healing capability
Authors:
W. Román Acevedo,
D. Rubi,
J. Lecourt,
U. Lüders,
F. Gomez-Marlasca,
P. Granell,
F. Golmar,
P. Levy
Abstract:
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an interm…
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We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current-voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding $10^4$ s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a Si$O_x$ layer coexist, accounting for the observed resistive switching. Overall electrode area dependence and temperature dependent resistance measurements support our scenario. After device failure takes place, the system can be turned functional again by heating up to low temperature (120 C), a feature that could be exploited for the design of memristive devices with self-healing functionality. These results give insight into the existence of multiple resistive switching mechanisms in manganite-based memristive systems and provide strategies for controlling them.
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Submitted 16 June, 2016;
originally announced June 2016.
