Showing 1–50 of 89 results for author: Abrikosov, I

Theoretical characterization of NV-like defects in 4H-SiC using ADAQ with the SCAN and r2SCAN meta-GGA functionals

Authors: Ghulam Abbas, Oscar Bulancea-Lindvall, Joel Davidsson, Rickard Armiento, Igor A. Abrikosov

Abstract: Kohn-Sham density functional theory (DFT) is widely used for screening color centers in semiconductors. While the Perdew-Burke-Ernzerhof (PBE) functional is efficient, it often lacks precision in describing defects. The Heyd-Scuseria-Ernzerhof (HSE) functional is more accurate but computationally expensive, making it impractical for large-scale screening. However, third-rung functionals of "Jacob'… ▽ More Kohn-Sham density functional theory (DFT) is widely used for screening color centers in semiconductors. While the Perdew-Burke-Ernzerhof (PBE) functional is efficient, it often lacks precision in describing defects. The Heyd-Scuseria-Ernzerhof (HSE) functional is more accurate but computationally expensive, making it impractical for large-scale screening. However, third-rung functionals of "Jacob's ladder" remain largely under explored in this context. This study evaluates the Strongly Constrained and Appropriately Normed (SCAN) family of meta-GGA functionals as potential alternatives to PBE for characterizing NV-like color centers in 4H-SiC using the Automatic Defect Analysis and Qualification (ADAQ) framework. We examine nitrogen, oxygen, fluorine, sulfur, and chlorine vacancies in 4H-SiC, focusing on applications in quantum technology. Our results show that SCAN and r2SCAN achieve greater accuracy than PBE, approaching HSE's precision at a lower computational cost. This suggests that the SCAN family offers a practical improvement for screening new color centers, with computational demands similar to PBE. △ Less

Submitted 13 January, 2025; originally announced January 2025.

Comments: 17 pages, 4 figures, journal

Controlled polymorphic competition -- a path to tough and hard ceramics

Authors: D. G. Sangiovanni, A. Kjellén, F. Trybel, L. J. S. Johnson, M. Odén, F. Tasnádi, I. A. Abrikosov

Abstract: From nanoscale devices including sensors, electronics, or biocompatible coatings to macroscale structural, automotive or aerospace components, fundamental understanding of plasticity and fracture can guide the realization of materials that ensure safe and durable performance. Identifying the role of atomic-scale plasticity is crucial, especially for applications relying on brittle ceramics. Here,… ▽ More From nanoscale devices including sensors, electronics, or biocompatible coatings to macroscale structural, automotive or aerospace components, fundamental understanding of plasticity and fracture can guide the realization of materials that ensure safe and durable performance. Identifying the role of atomic-scale plasticity is crucial, especially for applications relying on brittle ceramics. Here, stress-intensity-controlled atomistic simulations of fracture in cubic Ti$_{1-x}$Al$_{x}$N model systems demonstrate how $\overset{\lower.5em\circ}{\mathrm{A}}$-scale plasticity - manifested as lattice distortions, phase transformation, nucleation and emission of dislocations - substantially affects the macroscale fracture toughness (K$_{Ic}$) and fracture strength ($σ$$_{f}$) of brittle ceramics. The extent of plastic deformation in Ti$_{1-x}$Al$_{x}$N increases monotonically with the Al content (x), due to a corresponding decrease in cubic $\rightarrow$ hexagonal polymorph transition energies and unstable stacking fault energies. Overall, plasticity positively affects the mechanical properties, resulting in optimal combinations of strength and toughness for x~0.6. However, for x exceeding ~0.7, the benefits of plasticity diminish. The initial rise followed by a decline in K$_{Ic}$(x) and $σ$$_{f}$(x) is explained based on the interplay between phase transformation, shear-induced faulting, and tensile cleavage on the easiest fracture plane. The results highlight the impact of atomic-scale plasticity on observable properties and point to strategies for toughening ceramics through control of polymorph competition. △ Less

Submitted 6 May, 2025; v1 submitted 20 December, 2024; originally announced December 2024.

Machine learning interatomic potential for the low-modulus Ti-Nb-Zr alloys in the vicinity of dynamical instability

Authors: Boburjon Mukhamedov, Ferenc Tasnadi, Igor A. Abrikosov

Abstract: Traditionally, alloying and thermal treatment are considered as the main tools for design of new materials. Application of first-principles simulations can significantly accelerate the process of materials design, however, to account for both, multicomponent chemical disorder and finite temperature effects in theoretical simulations is a challenging task. In this work we have trained machine learn… ▽ More Traditionally, alloying and thermal treatment are considered as the main tools for design of new materials. Application of first-principles simulations can significantly accelerate the process of materials design, however, to account for both, multicomponent chemical disorder and finite temperature effects in theoretical simulations is a challenging task. In this work we have trained machine learning interatomic potential to effectively simulate finite temperature elastic properties of multicomponent β-Ti94-xNbxZr6 alloys. Our simulations predict the presence of the elinvar effect for the wide range of temperatures. Importantly, we predict that in a vicinity of dynamical and mechanical instability, the β-Ti94-xNbxZr6 alloys demonstrate strongly non-linear concentration-dependence of elastic moduli, which leads to low values of moduli comparable to that of human bone. Moreover, these alloys demonstrate a strong anisotropy of directional Young's modulus which can be helpful for microstructure tailoring and design of materials with desired elastic properties. △ Less

Submitted 15 March, 2025; v1 submitted 9 December, 2024; originally announced December 2024.

Comments: 21 pages, 9 figures

Journal ref: Materials & Design, Volume 253 (2025) 113865

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Authors: Oscar Bulancea-Lindvall, Joel Davidsson, Ivan G. Ivanov, Adam Gali, Viktor Ivády, Rickard Armiento, Igor A. Abrikosov

Abstract: Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultra-bright AB photoluminescence lines in 4H-SiC are observable at room temperature and have been proposed as a single-photon quantum emitter. These lines h… ▽ More Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultra-bright AB photoluminescence lines in 4H-SiC are observable at room temperature and have been proposed as a single-photon quantum emitter. These lines have been previously studied and assigned to the carbon antisite-vacancy pair (CAV). In this paper, we report on new measurements of the AB-lines' temperature dependence, and carry out an in-depth computational study on the optical properties of the CAV defect. We find that the CAV defect has the potential to exhibit several different zero-phonon luminescences with emissions in the near-infrared telecom band, in its neutral and positive charge states. However, our measurements show that the AB-lines only consist of three non-thermally activated lines instead of the previously reported four lines, meanwhile our calculations on the CAV defect are unable to find optical transitions in full agreement with the AB-line assignment. In the light of our results, the identification of the AB-lines and the associated room temperature emission require further study. △ Less

Submitted 13 August, 2024; originally announced August 2024.

Comments: 14 main pages, 7 main figures, 2 tables, one appendix with software details, and supplementary with 2 figures and 2 tables

Journal ref: Phys. Rev. Applied 22, 034056 (2024)

Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics

Authors: Rohit Babar, Ádám Ganyecz, Igor A. Abrikosov, Gergely Barcza, Viktor Ivády

Abstract: Topological defects, such as Stone-Wales defects and grain boundaries, are common in 2D materials. In this study, we investigate the intricate interplay of topological defects and carbon contamination in hexagonal boron nitride revealing an intriguing class of color centers. We demonstrate that both carbon contamination and strain can stabilize Stone-Wales configurations and give rise to emitters… ▽ More Topological defects, such as Stone-Wales defects and grain boundaries, are common in 2D materials. In this study, we investigate the intricate interplay of topological defects and carbon contamination in hexagonal boron nitride revealing an intriguing class of color centers. We demonstrate that both carbon contamination and strain can stabilize Stone-Wales configurations and give rise to emitters with desirable optical properties in the visible spectral range. Inspired by these results, we further demonstrate that carbon atoms at grain boundaries can resolve energetic B-B and N-N bonds leading to highly favorable atomic structures that may facilitate the accumulation of carbon contamination at the boundaries. Similarly to contaminated Stone-Wales defects, carbon-doped grain boundaries can also give rise to color centers emitting in the visible spectral range with short radiative lifetime and high Debye-Waller factors. Our discoveries shed light on an exciting class of defects and pave the way toward the identification of color centers and single photon emitters in hBN. △ Less

Submitted 31 May, 2024; v1 submitted 1 March, 2024; originally announced March 2024.

Strong electron-phonon coupling and phonon-induced superconductivity in tetragonal C$_3$N$_4$ with hole doping

Authors: Alexander N. Rudenko, Danis I. Badrtdinov, Igor A. Abrikosov, Mikhail I. Katsnelson

Abstract: C$_3$N$_4$ is a recently discovered phase of carbon nitrides with the tetragonal crystal structure [D.Laniel $\textit{et al.}$, Adv. Mater. 2023, 2308030] that is stable at ambient conditions. C$_3$N$_4$ is a semiconductor exhibiting flat-band anomalies in the valence band, suggesting the emergence of many-body instabilities upon hole doping. Here, using state-of-the-art first-principles calculati… ▽ More C$_3$N$_4$ is a recently discovered phase of carbon nitrides with the tetragonal crystal structure [D.Laniel $\textit{et al.}$, Adv. Mater. 2023, 2308030] that is stable at ambient conditions. C$_3$N$_4$ is a semiconductor exhibiting flat-band anomalies in the valence band, suggesting the emergence of many-body instabilities upon hole doping. Here, using state-of-the-art first-principles calculations we show that hole-doped C$_3$N$_4$ reveals strong electron-phonon coupling, leading to the formation of a gapped superconducting state. The phase transition temperatures turn out to be strongly dependent on the hole concentration. We propose that holes could be injected into C$_3$N$_4$ via boron doping which induces, according to our results, a rigid shift of the Fermi energy without significant modification of the electronic structure. Based on the electron-phonon coupling and Coulomb pseudopotential calculated from first principles, we conclude that the boron concentration of 6 atoms per nm$^3$ would be required to reach the critical temperature of $\sim$36 K at ambient pressure. △ Less

Submitted 4 January, 2024; v1 submitted 31 August, 2023; originally announced August 2023.

Comments: Calculation of the Coulomb pseudopotential revised, which lowered the predicted Tc. Final version: 10 pages incl. Supplemental Material, 10 figures, and 2 tables

Journal ref: Phys. Rev. B 109, 014502 (2024)

ADAQ-SYM: Automated Symmetry Analysis of Defect Orbitals

Authors: William Stenlund, Joel Davidsson, Viktor Ivády, Rickard Armiento, Igor A. Abrikosov

Abstract: Quantum technologies like single photon emitters and qubits can be enabled by point defects in semiconductors, with the NV-center in diamond being the most prominent example. There are many different semiconductors, each potentially hosting interesting defects. The symmetry properties of the point defect orbitals can yield useful information about the behavior of the system, such as the interactio… ▽ More Quantum technologies like single photon emitters and qubits can be enabled by point defects in semiconductors, with the NV-center in diamond being the most prominent example. There are many different semiconductors, each potentially hosting interesting defects. The symmetry properties of the point defect orbitals can yield useful information about the behavior of the system, such as the interaction with polarized light. We have developed a tool to perform symmetry analysis of point defect orbitals obtained by plane-wave density functional theory simulations. The software tool, named ADAQ-SYM, calculates the characters for each orbital, finds the irreducible representations, and uses selection rules to find which optical transitions are allowed. The capabilities of ADAQ-SYM are demonstrated on several defects in diamond and 4H-SiC. The symmetry analysis explains the different zero phonon line (ZPL) polarization of the hk and kh divacancies in 4H-SiC. △ Less

Submitted 26 April, 2024; v1 submitted 10 July, 2023; originally announced July 2023.

Comments: 32 pages, 9 figures

Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database

Authors: Joel Davidsson, William Stenlund, Abhijith S Parackal, Rickard Armiento, Igor A. Abrikosov

Abstract: Color centers in diamond are at the forefront of the second quantum revolution. A handful of defects are in use, and finding ones with all the desired properties for quantum applications is arduous. By using high-throughput calculations, we screen 21607 defects in diamond and collect the results in the ADAQ database. Upon exploring this database, we find not only the known defects but also several… ▽ More Color centers in diamond are at the forefront of the second quantum revolution. A handful of defects are in use, and finding ones with all the desired properties for quantum applications is arduous. By using high-throughput calculations, we screen 21607 defects in diamond and collect the results in the ADAQ database. Upon exploring this database, we find not only the known defects but also several unexplored defects. Specifically, defects containing sodium stand out as particularly relevant because of their high spins and predicted improved optical properties compared to the NV center. Hence, we studied these in detail, employing high-accuracy theoretical calculations. The single sodium substitutional (Na$\mathrm{_C}$) has various charge states with spin ranging from 0.5 to 1.5, ZPL in the near-infrared, and a high Debye-Waller factor, making it ideal for biological quantum applications. The sodium vacancy (NaV) has a ZPL in the visible region and a potential rare spin-2 ground state. Our results show sodium implantation yields many interesting spin defects that are valuable additions to the arsenal of point defects in diamond studied for quantum applications. △ Less

Submitted 11 June, 2024; v1 submitted 19 June, 2023; originally announced June 2023.

Journal ref: npj Comput Mater 10, 109 (2024)

Exploring Magnetism of Lead-free Halide Double Perovskites: A High-Throughput First-Principles Study

Authors: Utkarsh Singh, Johan Klarbring, Igor A. Abrikosov, Sergei I. Simak

Abstract: We have performed a comprehensive, first-principles high-throughput study of the magnetic properties of halide double perovskites, $Cs_2BB^\prime Cl_6$, with magnetic ions occupying one or both B and B$^\prime$ sites. Our findings indicate a general tendency for these materials to exhibit antiferromagnetic ordering with low Néel temperatures. At the same time, we reveal a few potential candidates… ▽ More We have performed a comprehensive, first-principles high-throughput study of the magnetic properties of halide double perovskites, $Cs_2BB^\prime Cl_6$, with magnetic ions occupying one or both B and B$^\prime$ sites. Our findings indicate a general tendency for these materials to exhibit antiferromagnetic ordering with low Néel temperatures. At the same time, we reveal a few potential candidates that predicted to be ferromagnetic with relatively high Curie temperatures. Achieving ferromagnetic coupling might be feasible via simultaneously alloying at B and B$^\prime$ sites with magnetic 3d and non-magnetic 5d ions. With this approach, we discover that $Cs_2HgCrCl_6$, $Cs_2AgNiCl_6$ and $Cs_2AuNiCl_6$ have high Curie temperatures relative to their peers, with the latter two exhibiting half metallic behaviour. Further, this study illuminates the underpinning mechanism of magnetic exchange interactions in halide double perovskites, enabling a deeper understanding of their magnetic behaviour. Our findings, especially the discovery of the compounds with robust half-metallic properties and high Curie temperatures holds promise for potential applications in the field of spintronics. △ Less

Submitted 15 June, 2023; originally announced June 2023.

Comments: 12 pages, 6 figures

High temperature decomposition and age hardening of single-phase wurtzite Ti$_{1-x}$Al$_{x}$N thin films grown by cathodic arc deposition

Authors: J. Salamania, F. Bock, L. J. S. Johnson, F. Tasnádi, K. M. Calamba Kwick, A. F. Farhadizaeh, I. A. Abrikosov, L. Rogström, M. Odén

Abstract: We investigated the high temperature decomposition behavior of wurtzite phase Ti$_{1-x}$Al$_{x}$N films using experimental methods and first-principles calculations. Single phase metastable wurtzite Ti$_{1-x}$Al$_{x}$N (x = 0.65, 0.75, 085 and 0.95) solid solution films were grown by cathodic arc deposition using low duty cycle pulsed substrate-bias voltage. First-principles calculated elastic con… ▽ More We investigated the high temperature decomposition behavior of wurtzite phase Ti$_{1-x}$Al$_{x}$N films using experimental methods and first-principles calculations. Single phase metastable wurtzite Ti$_{1-x}$Al$_{x}$N (x = 0.65, 0.75, 085 and 0.95) solid solution films were grown by cathodic arc deposition using low duty cycle pulsed substrate-bias voltage. First-principles calculated elastic constants of the wurtzite Ti$_{1-x}$Al$_{x}$N phase show a strong dependence on alloy composition. The predicted phase diagram shows a miscibility gap with an unstable region. High resolution scanning transmission electron microscopy and chemical mapping demonstrate decomposition of the films after high temperature annealing (950$^{\circ}$C), which resulted in nanoscale chemical compositional modulations containing Ti-rich and Al-rich regions with coherent or semi coherent interfaces. This spinodal decomposition of the wurtzite film causes age hardening of 1-2 GPa. △ Less

Submitted 30 May, 2023; originally announced May 2023.

The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission

Authors: Oscar Bulancea-Lindvall, Joel Davidsson, Rickard Armiento, Igor A. Abrikosov

Abstract: The diamond nitrogen vacancy (NV) center remains an ever increasing topic of interest. At present, it is considered an ideal example of a solid-state qubit applicable in quantum communication, computing, and sensing alike. With its success, the search for defects that share or improve upon its advantageous features is an ongoing endeavor. By performing large-scale high-throughput screening of 5260… ▽ More The diamond nitrogen vacancy (NV) center remains an ever increasing topic of interest. At present, it is considered an ideal example of a solid-state qubit applicable in quantum communication, computing, and sensing alike. With its success, the search for defects that share or improve upon its advantageous features is an ongoing endeavor. By performing large-scale high-throughput screening of 52600 defects in 4H silicon carbide (SiC), we identify a collection of NV-like color-centers of particular interest. From this list, the single most promising candidate consists of a silicon vacancy and chlorine substituted on the carbon site, and is given the name of the chlorine vacancy (ClV) center. Through high-accuracy first-principle calculations, we confirm that the ClV center is similar to the NV center in diamond in its local structure and shares many qualitative and quantitative features in the electronic structure and spin properties. In contrast to the NV center, however, the ClV center in SiC exhibits emission in the telecom range near the C-band. △ Less

Submitted 27 April, 2023; originally announced April 2023.

Report number: 108, 224106

Journal ref: Physical Review B 108, 224106 (2023)

First Principles Theory of the Pressure Induced Invar Effect in FeNi Alloys

Authors: Amanda Ehn, Björn Alling, Igor A. Abrikosov

Abstract: The Fe$_{0.64}$Ni$_{0.36}$ alloy exhibits an anomalously low thermal expansion at ambient conditions, an effect that is known as the invar effect. Other Fe$_{x}$Ni$_{1-x}$ alloys do not exhibit this effect at ambient conditions but upon application of pressure even Ni-rich compositions show low thermal expansion, thus called the pressure induced invar effect. We investigate the pressure induced in… ▽ More The Fe$_{0.64}$Ni$_{0.36}$ alloy exhibits an anomalously low thermal expansion at ambient conditions, an effect that is known as the invar effect. Other Fe$_{x}$Ni$_{1-x}$ alloys do not exhibit this effect at ambient conditions but upon application of pressure even Ni-rich compositions show low thermal expansion, thus called the pressure induced invar effect. We investigate the pressure induced invar effect for Fe$_{x}$Ni$_{1-x}$ for x = 0.64, 0.50, 0.25 by performing a large set of supercell calculations, taking into account noncollinear magnetic states. We observe anomalies in the equation of states for the three compositions. The anomalies coincide with magnetic transitions from a ferromagnetic state at high volumes to a complex magnetic state at lower volumes. Our results can be interpreted in the model of noncollinear magnetism which relates the invar effect to increasing contribution of magnetic entropy with pressure. △ Less

Submitted 9 February, 2023; originally announced February 2023.

Electronic structure of the magnetic halide double perovskites Cs2(Ag,Na)FeCl6 from first-principles

Authors: Johan Klarbring, Utkarsh Singh, Sergei I. Simak, Igor A. Abrikosov

Abstract: A family of magnetic halide double perovskites (HDPs) have recently attracted attention due to their potential to broaden application areas of halide double perovskites into e.g. spintronics. Up to date the theoretical modelling of these systems have relied on primitive approximations to the density functional theory (DFT). In this paper, we study structural, electronic and magnetic properties of… ▽ More A family of magnetic halide double perovskites (HDPs) have recently attracted attention due to their potential to broaden application areas of halide double perovskites into e.g. spintronics. Up to date the theoretical modelling of these systems have relied on primitive approximations to the density functional theory (DFT). In this paper, we study structural, electronic and magnetic properties of the Fe$^{3+}$-containing HDPs Cs$_2$AgFeCl$_6$ and Cs$_2$NaFeCl$_6$ using a combination of more advanced DFT-based methods, including DFT+U, hybrid-DFT and treatments of various magnetic states. We examine the effect of varying the effective Hubbard parameter, U$_{eff}$, in DFT+U and the mixing-parameter, $α$, in hybrid DFT on the electronic structure and structural properties. Our results reveal a set of localized Fe(d) states that are highly sensitive to these parameters. Cs$_2$AgFeCl$_6$ and Cs$_2$NaFeCl$_6$ are both antiferromagnets with Neél temperatures well below room temperature and are thus in their paramagnetic (PM) state at the external conditions relevant to most applications. Therefore, we have examined the effect of disordered magnetism on the electronic structure of these systems and find that while Cs$_2$NaFeCl$_6$ is largely unaffected, Cs$_2$AgFeCl$_6$ shows significant renormalization of its electronic band structure. △ Less

Submitted 29 November, 2022; originally announced November 2022.

Phase formation in CrFeCoNi nitride thin films

Authors: Smita G. Rao, Boburjon Mukhamedov, Gyula Nagy, Eric N. Tseng, Rui Shu, Robert Boyd, Daniel Primetzhofer, Per O. Å. Persson, Björn Alling, Igor A. Abrikosov, Arnaud le Febvrier, Per Eklund

Abstract: As a single-phase alloy, CrFeCoNi is a face centered cubic (fcc) material related to the archetypical high-entropy Cantor alloy CrFeCoNiMn. For thin films, CrFeCoNi of approximately equimolar composition tends to assume an fcc structure when grown at room temperature by magnetron sputtering. However, the single-phase solid solution state is typically not achieved for thin films grown at higher tem… ▽ More As a single-phase alloy, CrFeCoNi is a face centered cubic (fcc) material related to the archetypical high-entropy Cantor alloy CrFeCoNiMn. For thin films, CrFeCoNi of approximately equimolar composition tends to assume an fcc structure when grown at room temperature by magnetron sputtering. However, the single-phase solid solution state is typically not achieved for thin films grown at higher temperatures. The same holds true for Cantor alloy-based ceramics (nitrides and oxides), where phase formation is extremely sensitive to process parameters such as the amount of reactive gas. This study combines theoretical and experimental methods to understand the phase formation in nitrogen-containing CrFeCoNi thin films. Density functional theory calculations considering three competing phases (CrN, Fe-Ni and Co) show that the free energy of mixing, delta G of (CrFeCoNi)1-xNx solid solutions has a maximum at x = 0.20-0.25, and delta G becomes lower when x less than 0.20, greater than 0.25. Thin films of (CrFeCoNi)1-xNx (x = 0.14-0.41) grown by magnetron sputtering show stabilization of the metallic fcc when x lesser than or equal to 0.22 and the stabilization of the NaCl B1 structure when x is greater than 0.33, consistent with the theoretical prediction. In contrast, films with intermediate amounts of nitrogen (x = 0.22) grown at higher temperatures show segregation into multiple phases of CrN, Fe-Ni-rich and Co. These results offer an explanation for the requirement of kinetically limited growth conditions at low temperature for obtaining single-phase CrFeCoNi Cantor-like nitrogen-containing thin films and are of importance for understanding the phase-formation mechanisms in multicomponent ceramics. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Synthesis of Ultra-Incompressible Carbon Nitrides Featuring Three-Dimensional Frameworks of CN4 Tetrahedra Recoverable at Ambient Conditions

Authors: Dominique Laniel, Florian Trybel, Andrey Aslandukov, Saiana Khandarkhaeva, Timofey Fedotenko, Yuqing Yin, Ferenc Tasnádi, Alena V. Ponomareva, Gunnar Weck, Fariia Iasmin Akbar, Bjoern Winkler, Adrien Néri, Stella Chariton, Carlotta Giacobbe, Jonathan Wright, Gaston Garbarino, Björn Wehinger, Anna Pakhomova, Mohamed Mezouar, Vitali Prakapenka, Victor Milman, Wolfgang Schnick, Igor A. Abrikosov, Leonid Dubrovinsky, Natalia Dubrovinskaia

Abstract: More than thirty years ago, carbon nitrides featuring 3D frameworks of tetrahedral CN4 units were identified as one of the great aspirations of materials science, expected to have a hardness greater than or comparable to diamond. Since then, no unambiguous experimental evidence of their existence has been delivered. Here, we report the high-pressure high-temperature synthesis of the long-sought-af… ▽ More More than thirty years ago, carbon nitrides featuring 3D frameworks of tetrahedral CN4 units were identified as one of the great aspirations of materials science, expected to have a hardness greater than or comparable to diamond. Since then, no unambiguous experimental evidence of their existence has been delivered. Here, we report the high-pressure high-temperature synthesis of the long-sought-after covalent carbon nitrides, tI14-C3N4, hP126-C3N4, and tI24-CN2, in laser-heated diamond anvil cells. Their structures were solved and refined using synchrotron single-crystal X-ray diffraction. In these solids, carbon atoms, all sp3-hybridized, and nitrogen atoms are fully saturated, forming four and three covalent bonds, respectively, leading to three-dimensional arrangements of corner-sharing CN4 tetrahedra. These carbon nitrides are ultra-incompressible, with hP126-C3N4 and tI24-CN2 even rivalling diamond's incompressibility, and superhard. These novel compounds are recoverable to ambient conditions in crystalline form and chemically stable in air. Being wide-band gap semiconductors with intriguing features in their electronic structure, they are expected to exhibit multiple exceptional functionalities besides their mechanical properties, opening new perspectives for materials science. △ Less

Submitted 5 September, 2022; originally announced September 2022.

High-Pressure Synthesis of Seven Lanthanum Hydrides with a Significant Variability of Hydrogen Content

Authors: Dominique Laniel, Florian Trybel, Bjoern Winkler, Florian Knoop, Timofey Fedotenko, Saiana Khandarkhaeva, Alena Aslandukova, Thomas Meier, Stella Chariton, Konstantin Glazyrin, Victor Milman, Vitali Prakapenka, Igor A. Abrikosov, Leonid Dubrovinsky, Natalia Dubrovinskaia

Abstract: The lanthanum-hydrogen system has attracted significant attention following the report of superconductivity in LaH10 at near-ambient temperatures and high pressures. Here, we present the results of our single-crystal X-ray diffraction studies on this system, supported by density functional theory calculations, which reveal an unexpected chemical and structural diversity of lanthanum hydrides synth… ▽ More The lanthanum-hydrogen system has attracted significant attention following the report of superconductivity in LaH10 at near-ambient temperatures and high pressures. Here, we present the results of our single-crystal X-ray diffraction studies on this system, supported by density functional theory calculations, which reveal an unexpected chemical and structural diversity of lanthanum hydrides synthesized in the range of 50 to 180 GPa. Seven lanthanum hydrides were produced, LaH3, LaH~4, LaH4+δ, La4H23, LaH6+δ, LaH9+δ, and LaH10+δ, and the atomic coordinates of lanthanum in their structures determined. The regularities in rare-earth element hydrides unveiled here provide clues to guide the search for other synthesizable hydrides and candidate high-temperature superconductors. The hydrogen content variability in lanthanum hydrides and the samples' phase heterogeneity underline the challenges related to assessing potentially superconducting phase(s) and the nature of electronic transitions in high-pressure hydrides. △ Less

Submitted 22 August, 2022; originally announced August 2022.

Revealing Phosphorus Nitrides up to the Megabar Regime: Synthesis of alpha-P3N5, delta-P3N5 and PN2

Authors: Dominique Laniel, Florian Trybel, Adrien Neri, Yuqing Yin, Andrey Aslandukov, Timofey Fedotenko, Saiana Khandarkhaeva, Ferenc Tasnadi, Stella Chariton, Carlotta Giacobbe, Eleanor Lawrence Bright, Michael Hanfland, Vitali Prakapenka, Wolfgang Schnick, Igor A. Abrikosov, Leonid Dubrovinsky, Natalia Dubrovinskaia

Abstract: Non-metal nitrides are an exciting field of chemistry, featuring a significant number of compounds that can possess outstanding material properties. This characteristic relies on maximizing the number of strong covalent bonds, with crosslinked XN6 octahedra frameworks being particularly intriguing. In this study, the phosphorus-nitrogen system was studied up to 137 GPa in laser-heated diamond anvi… ▽ More Non-metal nitrides are an exciting field of chemistry, featuring a significant number of compounds that can possess outstanding material properties. This characteristic relies on maximizing the number of strong covalent bonds, with crosslinked XN6 octahedra frameworks being particularly intriguing. In this study, the phosphorus-nitrogen system was studied up to 137 GPa in laser-heated diamond anvil cells and three previously unobserved phases were synthesized and characterized by single-crystal X-ray diffraction, Raman spectroscopy measurements and density functional theory calculations. Delta-P3N5 and PN2 were found to form at 72 and 134 GPa, respectively, and both feature dense 3D networks of the so far elusive PN6 units. The two are ultra-incompressible, having a bulk modulus of K0 = 322 GPa for delta-P3N5 and K0 = 339 GPa for PN2. Upon decompression below 7 GPa, delta-P3N5 undergoes a transformation into a novel alpha'-P3N5 solid, stable at ambient conditions, that has a unique structure type based on PN4 tetrahedra. The formation of alpha'-P3N5 underlines that a phase space otherwise inaccessible can be explored through high-pressure formed phases. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Elucidating dislocation core structures in titanium nitride through high-resolution imaging and atomistic simulations

Authors: J. Salamania, D. G. Sangiovanni, A. Kraych, K. M. Calamba Kwick, I. C. Schramm, L. J. S. Johnson, R. Boyd, B. Bakhit, T. W. Hsu, M. Mrovec, L. Rogström, F. Tasnádi, I. A. Abrikosov, M. Odén

Abstract: Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterized thin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. By high-resolution scanning transmission electron microscopy (STEM) of epitaxial single crystal (001)-oriented TiN films, we identify different dislocation types and their core structures. These includ… ▽ More Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterized thin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. By high-resolution scanning transmission electron microscopy (STEM) of epitaxial single crystal (001)-oriented TiN films, we identify different dislocation types and their core structures. These include, besides the expected primary full a/2{110}<1$\bar{1}$0> dislocation, Shockley partial dislocations a/6{111}<11$\bar{2}$> and sessile Lomer edge dislocations a/2{100}<011>. Density-functional theory and classical interatomic potential simulations complement STEM observations by recovering the atomic structure of the different dislocation types, estimating Peierls stresses, and providing insights on the chemical bonding nature at the core. The generated models of the dislocation cores suggest locally enhanced metal-metal bonding, weakened Ti-N bonds, and N vacancy-pinning that effectively reduces the mobilities of {110}<1$\bar{1}$0> and {111}<11$\bar{2}$> dislocations. Our findings underscore that the presence of different dislocation types and their effects on chemical bonding should be considered in the design and interpretations of nanoscale and macroscopic properties of TiN. △ Less

Submitted 28 October, 2022; v1 submitted 13 June, 2022; originally announced June 2022.

Exhaustive characterization of modified Si vacancies in 4H-SiC

Authors: Joel Davidsson, Rohit Babar, Danial Shafizadeh, Ivan G. Ivanov, Viktor Ivády, Rickard Armiento, Igor A. Abrikosov

Abstract: The negatively charged silicon vacancy ($\mathrm{V_{Si}^-}$) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-opt… ▽ More The negatively charged silicon vacancy ($\mathrm{V_{Si}^-}$) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-optical signals in a defect database generated by Automatic Defect Analysis and Qualification (ADAQ) workflows. This search reveals only one class of atomic structures that exhibit silicon-vacancy-like properties in the data: a carbon antisite ($\mathrm{C_{Si}}$) within sub-nanometer distances from the silicon vacancy only slightly alters the latter without affecting the charge or spin state. Such a perturbation is energetically bound. We consider the formation of $\mathrm{V_{Si}^-+C_{Si}}$ up to 2 nm distance and report their zero phonon lines and zero field splitting values. In addition, we perform high-resolution photoluminescence experiments in the silicon vacancy region and find an abundance of lines. Comparing our computational and experimental results, several configurations show great agreement. Our work demonstrates the effectiveness of a database with high-throughput results in the search for defects in quantum applications. △ Less

Submitted 19 October, 2022; v1 submitted 25 May, 2022; originally announced May 2022.

Journal ref: Nanophotonics, 11, 20, 4565-4580 (2022)

Isotope purification induced reduction of spin relaxation and spin coherence times in semiconductors

Authors: Oscar Bulancea-Lindvall, Matthew Travis Eiles, Nguyen Tien Son, Igor A. Abrikosov, Viktor Ivády

Abstract: Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in semiconductors. It is commonly accepted that a high degree of depletion of nuclear spins can enhance the coherence time by reducing magnetic noise. Here we show that the isotope purification beyond a certain optimal leve… ▽ More Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in semiconductors. It is commonly accepted that a high degree of depletion of nuclear spins can enhance the coherence time by reducing magnetic noise. Here we show that the isotope purification beyond a certain optimal level becomes contra-productive, when both electron and nuclear spins are present in the vicinity of the qubits. Using state-of-the-art numerical tools and considering the silicon vacancy qubit in various spin environments, we demonstrate that the coupling to spin-1/2 point defects in the lattice can be significantly enhanced by isotope purification. The enhanced coupling shortens the spin relaxation time that in turn may limit the the coherence time of spin qubits. Our results can be straightforwardly generalized to triplet point defect qubits, such as the NV center in diamond and the divacancy in SiC. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Descriptor for slip-induced crack-blunting in refractory ceramics

Authors: D. G. Sangiovanni, A. Kraych, M. Mrovec, J. Salamania, M. Oden, F. Tasnadi, I. A. Abrikosov

Abstract: Understanding the competition between brittleness and plasticity in refractory ceramics is of importance for aiding design of hard materials with enhanced fracture resistance. Inspired by experimental observations of crack shielding due to dislocation activity in TiN ceramics [Int J Plast 27 (2011) 739], we carry out comprehensive atomistic investigations to identify mechanisms responsible for bri… ▽ More Understanding the competition between brittleness and plasticity in refractory ceramics is of importance for aiding design of hard materials with enhanced fracture resistance. Inspired by experimental observations of crack shielding due to dislocation activity in TiN ceramics [Int J Plast 27 (2011) 739], we carry out comprehensive atomistic investigations to identify mechanisms responsible for brittleness and slip-induced plasticity in Ti-N systems. First, we validate a semi-empirical interatomic potential against density-functional theory results of Griffith and Rice stress intensities for cleavage (KIc) and dislocation emission (KIe) as well as ab initio molecular dynamics mechanical-testing simulations of pristine and defective TiN lattices at temperatures between 300 and 1200 K. The calculated KIc and KIe values indicate intrinsic brittleness, as KIc<<KIe. However, KI-controlled molecular statics simulations - which reliably forecast macroscale mechanical properties through nanoscale modelling - reveal that slip-plasticity can be promoted by a reduced sharpness of the crack and/or the presence of anion vacancies. Classical molecular dynamics simulations of notched Ti-N supercell models subject to tension provide a qualitative understanding of the competition between brittleness and plasticity at finite temperatures. Although crack growth occurs in most cases, a sufficiently rapid accumulation of shear stress at the notch tip may postpone or prevent fracture via nucleation and emission of dislocations. Furthermore, we show that the probability to observe slip-induced plasticity leading to crack-blunting in flawed Ti-N lattices correlates with the ideal tensile/shear strength ratio (Iplast) of pristine Ti-N crystals. We propose that the Iplast descriptor should be considered for ranking the ability of ceramics to blunt cracks via dislocation-mediated plasticity at finite temperatures. △ Less

Submitted 17 September, 2023; v1 submitted 1 March, 2022; originally announced March 2022.

Electronic and optical properties of crystalline nitrogen versus black phosphorus: A comparative first-principles study

Authors: Alexander N. Rudenko, Swagata Acharya, Ferenc Tasnádi, Dimitar Pashov, Alena V. Ponomareva, Mark van Schilfgaarde, Igor A. Abrikosov, Mikhail I. Katsnelson

Abstract: Crystalline black nitrogen (BN) is an allotrope of nitrogen with the black phosphorus (BP) structure recently synthesized at high pressure by two independent research groups [Ji et al., Sci. Adv. 6, eaba9206 (2020); Laniel et al., Phys. Rev. Lett. 124, 216001 (2020)]. Here, we present a systematic study of the electronic and optical properties of BN focusing on its comparison with BP. To this end,… ▽ More Crystalline black nitrogen (BN) is an allotrope of nitrogen with the black phosphorus (BP) structure recently synthesized at high pressure by two independent research groups [Ji et al., Sci. Adv. 6, eaba9206 (2020); Laniel et al., Phys. Rev. Lett. 124, 216001 (2020)]. Here, we present a systematic study of the electronic and optical properties of BN focusing on its comparison with BP. To this end, we use the state-of-the-art quasiparticle self-consistent $GW$ approach with vertex corrections in both the electronic and optical channels. Despite many similarities, the properties of BN are found to be considerably different. Unlike BP, BN exhibits a larger optical gap (2.5 vs 0.26 eV), making BN transparent in the visible spectral region with a highly anisotropic optical response. This difference can be primarily attributed to a considerably reduced dielectric screening in BN, leading to enhancement of the effective Coulomb interaction. Despite relatively strong Coulomb interaction, exciton formation is largely suppressed in both materials. Our analysis of the elastic properties shows exceptionally high stiffness of BN, comparable to that of diamond. △ Less

Submitted 26 May, 2022; v1 submitted 3 February, 2022; originally announced February 2022.

Comments: Final version; 10 pages, 9 figures, 6 tables

Journal ref: Phys. Rev. B 105, 205135 (2022)

Correlation strength, orbital-selective incoherence, and local moments formation in the magnetic MAX-phase Mn$_2$GaC

Authors: H. J. M. Jönsson, M. Ekholm, I. Leonov, M. Dahlqvist, J. Rosen, I. A. Abrikosov

Abstract: We perform a theoretical study of the electronic structure and magnetic properties of the prototypical magnetic MAX-phase Mn$_2$GaC with the main focus given to the origin of magnetic interactions in this system. Using the density functional theory+dynamical mean-field theory (DFT+DMFT) method we explore the effects of electron-electron interactions and magnetic correlations on the electronic prop… ▽ More We perform a theoretical study of the electronic structure and magnetic properties of the prototypical magnetic MAX-phase Mn$_2$GaC with the main focus given to the origin of magnetic interactions in this system. Using the density functional theory+dynamical mean-field theory (DFT+DMFT) method we explore the effects of electron-electron interactions and magnetic correlations on the electronic properties, magnetic state, and spectral weight coherence of paramagnetic and magnetically-ordered phases of Mn$_2$GaC. We also benchmark the DFT-based disordered local moment approach for this system by comparing the obtained electronic and magnetic properties with that of the DFT+DMFT method. Our results reveal a complex magnetic behavior characterized by a near degeneracy of the ferro- and antiferromagnetic configurations of Mn$_2$GaC, implying a high sensitivity of its magnetic state to fine details of the crystal structure and unit-cell volume, consistent with experimental observations. We observe robust local-moment behavior and orbital-selective incoherence of the spectral properties of Mn$_2$GaC, implying the importance of orbital-dependent localization of the Mn $3d$ states. We find that Mn$_2$GaC can be described in terms of local magnetic moments, which may be modeled by DFT with disordered local moments. However, the magnetic properties are dictated by the proximity to the regime of formation of local magnetic moments, in which the localization is in fact driven by the Hund's exchange interaction, and not the Coulomb interaction. △ Less

Submitted 19 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. B 105, 035125 - Published 18 January 2022

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Authors: Oscar Bulancea-Lindvall, Matthew T. Eiles, Nguyen Tien Son, Igor A. Abrikosov, Viktor Ivády

Abstract: Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon vacancy qubit in silicon carbide (SiC) is of special interest in this re… ▽ More Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon vacancy qubit in silicon carbide (SiC) is of special interest in this respect, as it gives rise to relaxation rate extrema at vanishing magnetic field values and emits in the first near-infra-red transmission window of biological tissues, providing an opportunity for developing novel sensing applications for medicine and biology. However, the relaxation dynamics of the silicon vacancy center in SiC have not yet been fully explored. In this paper, we present results from a comprehensive theoretical investigation of the dipolar spin relaxation of the quartet spin states in various local spin environments. We discuss the underlying physics and quantify the magnetic field and spin bath dependent relaxation time $T_1$. Using these findings we demonstrate that the silicon vacancy qubit in SiC can implement microwave-free low magnetic field quantum sensors of great potential. △ Less

Submitted 25 January, 2022; v1 submitted 11 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. Applied 19, 034006 (2023)

Aromatic Hexazine [N6]4- Anion Revealed in the Complex Structure of the High-Pressure Potassium Nitride K9N56

Authors: Dominique Laniel, Florian Trybel, Yuqing Yin, Timofey Fedotenko, Saiana Khandarkhaeva, Andrey Aslandukov, Alexei I. Abrikosov, Talha Bin Masood, Carlotta Giacobbe, Eleanor Lawrence Bright, Konstantin Glazyrin, Michael Hanfland, Ingrid Hotz, Igor A. Abrikosov, Leonid Dubrovinsky, Natalia Dubrovinskaia

Abstract: Recent high-pressure synthesis of pentazolates and subsequent stabilization of the aromatic [N5]- anion at atmospheric pressure had an immense impact on nitrogen chemistry. Here, we present the first synthesis of an aromatic hexazine [N6]4- anion realized in high-pressure potassium nitride K9N56 at 46 and 61 GPa. The extremely complex structure of K9N56 was solved based on synchrotron single-cryst… ▽ More Recent high-pressure synthesis of pentazolates and subsequent stabilization of the aromatic [N5]- anion at atmospheric pressure had an immense impact on nitrogen chemistry. Here, we present the first synthesis of an aromatic hexazine [N6]4- anion realized in high-pressure potassium nitride K9N56 at 46 and 61 GPa. The extremely complex structure of K9N56 was solved based on synchrotron single-crystal X-ray diffraction and corroborated by density functional theory calculations. This result resolves a long-standing question of the aromatic hexazine stability and the possibility of its synthesis. △ Less

Submitted 18 December, 2021; originally announced December 2021.

Quantum sensor in a single layer van der Waals material

Authors: Rohit Babar, Gergely Barcza, Anton Pershin, Hyoju Park, Oscar Bulancea Lindvall, Gergő Thiering, Örs Legeza, Jamie H. Warner, Igor A. Abrikosov, Adam Gali, Viktor Ivády

Abstract: Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) semiconductors hosting such sensors have recently opened up new horizons for sensing in the subnanometer scales in 2D heterostructures. However, controlled creation of quantum sensor in a single layer 2D materials with high… ▽ More Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) semiconductors hosting such sensors have recently opened up new horizons for sensing in the subnanometer scales in 2D heterostructures. However, controlled creation of quantum sensor in a single layer 2D materials with high sensitivity has been elusive so far. Here, we report on a novel 2D quantum sensor, the VB2 centre in hexagonal boron nitride (hBN), with superior sensing capabilities. The centre's inherently low symmetry configuration gives rise to unique electronic and spin properties that implement a qubit in a 2D material with unprecedented sensitivity. The qubit is decoupled from its dense spin environment at low magnetic fields that gives rise to the reduction of the spin resonance linewidth and elongation of the coherence time. The VB2 centre is also equipped with a classical memory that can be utilized in storing population information. Using scanning transmission electron microscopy imaging, we confirm the presence of the point defect structure in free standing monolayer hBN created by electron beam irradiation. Our results provide a new material solution towards atomic-scale sensing in low dimensions. △ Less

Submitted 18 November, 2021; originally announced November 2021.

Predicting properties of hard-coating alloys using ab-initio and machine learning methods

Authors: H. Levämäki, F. Tasnadi, D. G. Sangiovanni, L. J. S. Johnson, R. Armiento, I. A. Abrikosov

Abstract: Accelerated design of novel hard coating materials requires state-of-the-art computational tools, which include data-driven techniques, building databases, and training machine learning models against the databases. In this work, we present a development of a heavily automated high-throughput workflow to build a database of industrially relevant hard coating materials, such as binary and ternary n… ▽ More Accelerated design of novel hard coating materials requires state-of-the-art computational tools, which include data-driven techniques, building databases, and training machine learning models against the databases. In this work, we present a development of a heavily automated high-throughput workflow to build a database of industrially relevant hard coating materials, such as binary and ternary nitrides. We use Vienna Ab initio Simulation package as the density functional theory calculator and the high-throughput toolkit to automate the calculation workflow. We calculate and present results, including the elastic constants, one of the key materials parameter that determines mechanical properties of the coatings, for X(1-x)Y(x)N binary and ternary nitrides, where X,Y in {Al, Ti, Zr, Hf} and fraction x = 0, 1/4, 1/2, 3/4, 1. We explore ways for ML techniques to support and complement the designed databases. We find that the crystal graph convolutional neural network model trained on Materials Project data for ordered lattices has sufficient prediction accuracy for the disordered nitrides, suggesting that the existing databases provide important data for predicting mechanical properties of qualitatively different type of material systems, in our case hard coating alloys, not included in the original dataset. △ Less

Submitted 23 November, 2021; v1 submitted 1 November, 2021; originally announced November 2021.

Comments: 10 pages, 4 figures

Thermodynamic and electronic properties of ReN$_2$ polymorphs at high-pressure

Authors: Ferenc Tasnádi, Florian Bock, Alena Ponomareva, Maxim Bykov, Saiana Khandarkhaeva, Leonid Dubrovinsky, Igor A. Abrikosov

Abstract: High pressure synthesis of rhenium nitride pernitride ReN$_2$ with crystal structure unusual for transition metal dinitrides and high values of hardness and bulk modulus attracted significant attention to this system. We investigate the thermodynamic and electronic properties of the P2$_1$/c phase of ReN$_2$ and compare them with two other polytypes, C2/m and P4/mbm phases suggested in the literat… ▽ More High pressure synthesis of rhenium nitride pernitride ReN$_2$ with crystal structure unusual for transition metal dinitrides and high values of hardness and bulk modulus attracted significant attention to this system. We investigate the thermodynamic and electronic properties of the P2$_1$/c phase of ReN$_2$ and compare them with two other polytypes, C2/m and P4/mbm phases suggested in the literature. Our calculations of the formation enthalpy at zero temperature show that the former phase is the most stable of the three up to pressure p=170 GPa, followed by the stabilization of the P4/mbm phase at higher pressure. The theoretical prediction is confirmed by diamond anvil cell synthesis of the P4/mbm ReN$_2$ at $\approx$175 GPa. Considering the effects of finite temperature in the quasi-harmonic approximation at p=100 GPa we demonstrate that the P2$_1$/c phase has the lowest free energy of formation at least up to 1000 K. Our analysis of the pressure dependence of the electronic structure of the rhenium nitride pernitride shows a presence of two electronic topological transitions around 18 GPa, when the Fermi surface changes its topology due to an appearance of a new electron pocket at the high-symmetry Y$_2$ point of the Brillouin zone while the disruption of a neck takes place slightly off from the $Γ$-A line. △ Less

Submitted 20 September, 2021; originally announced September 2021.

Comments: 15 pages, 7 figures, 3 tables

Dipolar spin relaxation of divacancy qubits in silicon carbide

Authors: Oscar Bulancea Lindvall, Nguyen Tien Son, Igor A. Abrikosov, Viktor Ivády

Abstract: Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin induced spin relaxation proc… ▽ More Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin induced spin relaxation processes of divacancy qubits in 4H-SiC. We reveal all the relevant magnetic field values where the longitudinal spin relaxation time T$_1$ drops resonantly due to the coupling to either nuclear spins or electron spins. We quantitatively analyze the dependence of the T$_1$ time on the concentration of point defect spins and the applied magnetic field in the most relevant cases and provide an analytical expression. We demonstrate that dipolar spin relaxation plays a significant role both in as-grown and ion implanted samples and it often limits the coherence time in 4H-SiC. △ Less

Submitted 28 September, 2021; v1 submitted 2 February, 2021; originally announced February 2021.

Temperature-dependent elastic properties of binary and multicomponent high-entropy refractory carbides

Authors: D. G. Sangiovanni, F. Tasnádi, T. Harrington, K. S. Vecchio, I. A. Abrikosov

Abstract: Available information concerning the elastic moduli of refractory carbides at temperatures (T) of relevance for practical applications is sparse and/or inconsistent. We carry out ab initio molecular dynamics (AIMD) simulations at T = 300, 600, 900, and 1200 K to determine the temperature-dependences of the elastic constants of rocksalt-structure (B1) TiC, ZrC, HfC, VC, and TaC compounds as well as… ▽ More Available information concerning the elastic moduli of refractory carbides at temperatures (T) of relevance for practical applications is sparse and/or inconsistent. We carry out ab initio molecular dynamics (AIMD) simulations at T = 300, 600, 900, and 1200 K to determine the temperature-dependences of the elastic constants of rocksalt-structure (B1) TiC, ZrC, HfC, VC, and TaC compounds as well as multicomponent high-entropy carbides (Ti,Zr,Hf,Ta,W)C and (V,Nb,Ta,Mo,W)C. The second order elastic constants are calculated by least-square fitting of the analytical expressions of stress vs. strain relationships to simulation results obtained from three tensile and three shear deformation modes. Moreover, we employ sound velocity measurements to evaluate the bulk, shear, elastic moduli and Poisson's ratios of single-phase B1 (Ti,Zr,Hf,Ta,W)C and (V,Nb,Ta,Mo,W)C at ambient conditions. Our experimental results are in excellent agreement with the values obtained by AIMD simulations. In comparison with the predictions of previous ab initio calculations - where the extrapolation of finite-temperature elastic properties accounted for thermal expansion while neglecting intrinsic vibrational effects - AIMD simulations produce a softening of elastic moduli with T in closer agreement with experiments. Results of our simulations show that TaC is the system which exhibits the highest elastic resistances to both tensile and shear deformation up to 1200 K, and identify the high-entropy (V,Nb,Ta,Mo,W)C system as candidate for applications that require good ductility and toughness at room as well as elevated temperatures. △ Less

Submitted 5 November, 2020; originally announced November 2020.

Journal ref: Materials & Design 2021

High-pressure synthesis of Dirac materials: layered van der Waals bonded BeN$_4$ polymorph

Authors: Maxim Bykov, Timofey Fedotenko, Stella Chariton, Dominique Laniel, Konstantin Glazyrin, Michael Hanfland, Jesse S. Smith, Vitali B. Prakapenka, Mohammad F. Mahmood, Alexander F. Goncharov, Alena V. Ponomareva, Ferenc Tasnádi, Alexei I. Abrikosov, Talha Bin Masood, Ingrid Hotz, Alexander N. Rudenko, Mikhail I. Katsnelson, Natalia Dubrovinskaia, Leonid Dubrovinsky, Igor A. Abrikosov

Abstract: High pressure chemistry is known to inspire the creation of unexpected new classes of compounds with exceptional properties. Here we report the synthesis at ~90 GPa of novel beryllium polynitrides, monoclinic and triclinic BeN4. The triclinic phase, upon decompression to ambient conditions, transforms into a compound with atomic-thick BeN4 layers interconnected via weak van der Waals bonds consist… ▽ More High pressure chemistry is known to inspire the creation of unexpected new classes of compounds with exceptional properties. Here we report the synthesis at ~90 GPa of novel beryllium polynitrides, monoclinic and triclinic BeN4. The triclinic phase, upon decompression to ambient conditions, transforms into a compound with atomic-thick BeN4 layers interconnected via weak van der Waals bonds consisting of polyacetylene-like nitrogen chains with conjugated π-systems and Be atoms in square-planar coordination. Theoretical calculations for a single BeN4 layer show that its electronic lattice is described by a slightly distorted honeycomb structure reminiscent of the graphene lattice and the presence of Dirac points in the electronic band structure at the Fermi level. The BeN4 layer, i.e. beryllonitrene, represents a qualitatively new class of 2D materials that can be built of a metal atom and polymeric nitrogen chains and host anisotropic Dirac fermions. △ Less

Submitted 8 March, 2021; v1 submitted 29 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Lett. 126, 175501 (2021)

Interstitial Carbon in bcc HfNbTiVZr high entropy alloy from first principles

Authors: Luis Casillas-Trujillo, Ulf Jansson, Martin Sahlberg, Gustav Ek, Magnus M. Nygård, Magnus H. Sørby, Bjørn C. Hauback, Igor Abrikosov, Björn Alling

Abstract: The remarkable mechanical properties of high entropy alloys can be further improved by interstitial alloying. In this work we employ density functional theory calculations to study the solution energies of dilute carbon interstitial atoms in tetrahedral and octahedral sites in bcc HfNbTiVZr. Our results indicate that carbon interstitials in tetrahedral sites are unstable, and the preferred octahed… ▽ More The remarkable mechanical properties of high entropy alloys can be further improved by interstitial alloying. In this work we employ density functional theory calculations to study the solution energies of dilute carbon interstitial atoms in tetrahedral and octahedral sites in bcc HfNbTiVZr. Our results indicate that carbon interstitials in tetrahedral sites are unstable, and the preferred octahedral sites present a large spread in the energy of solution. The inclusion of carbon interstitials induces large structural relaxations with long-range effects. The effect of local chemical environment on the energy of solution is investigated by performing a local cluster expansion including studies of its correlation with the carbon atomic Voronoi volume. However, the spread in solution energetics can not be explained with a local environment analysis only pointing towards a complex, long-range influence of interstitial carbon in this alloy. △ Less

Submitted 3 October, 2020; originally announced October 2020.

ADAQ: Automatic workflows for magneto-optical properties of point defects in semiconductors

Authors: Joel Davidsson, Viktor Ivády, Rickard Armiento, Igor A. Abrikosov

Abstract: Automatic Defect Analysis and Qualification (ADAQ) is a collection of automatic workflows developed for high-throughput simulations of magneto-optical properties of point defect in semiconductors. These workflows handle the vast number of defects by automating the processes to relax the unit cell of the host material, construct supercells, create point defect clusters, and execute calculations in… ▽ More Automatic Defect Analysis and Qualification (ADAQ) is a collection of automatic workflows developed for high-throughput simulations of magneto-optical properties of point defect in semiconductors. These workflows handle the vast number of defects by automating the processes to relax the unit cell of the host material, construct supercells, create point defect clusters, and execute calculations in both the electronic ground and excited states. The main outputs are the magneto-optical properties which include zero-phonon lines, zero-field splitting, and hyperfine coupling parameters. In addition, the formation energies are calculated. We demonstrate the capability of ADAQ by performing a complete characterization of the silicon vacancy in silicon carbide in the polytype 4H (4H-SiC). △ Less

Submitted 9 August, 2021; v1 submitted 28 August, 2020; originally announced August 2020.

Comments: Published version

Journal ref: Computer Physics Communications 269, 108091 (2021)

Photoluminescence at the ground state level anticrossing of the nitrogen-vacancy center in diamond

Authors: Viktor Ivády, Huijie Zheng, Arne Wickenbrock, Lykourgos Bougas, Georgios Chatzidrosos, Kazuo Nakamura, Hitoshi Sumiya, Takeshi Ohshima, Junichi Isoya, Dmitry Budker, Igor A. Abrikosov, Adam Gali

Abstract: The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL) signals due to the vanishing energy gap between the electron spin states, which enables to have an effect on the NV center's luminescence for a broad variety of environmental couplings. In this article we report on the G… ▽ More The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL) signals due to the vanishing energy gap between the electron spin states, which enables to have an effect on the NV center's luminescence for a broad variety of environmental couplings. In this article we report on the GSLAC photoluminescence signature of NV ensembles in different spin environments at various external fields. We investigate the effects of transverse electric and magnetic fields, P1 centers, NV centers, and the $^{13}$C nuclear spins, each of which gives rise to a unique PL signature at the GSLAC. The comprehensive analysis of the couplings and related optical signal at the GSLAC provides a solid ground for advancing various microwave-free applications at the GSLAC, including but not limited to magnetometry, spectroscopy, dynamic nuclear polarization (DNP), and nuclear magnetic resonance (NMR) detection. We demonstrate that not only the most abundant $^{14}$NV center but the $^{15}$NV can also be utilized in such applications and that nuclear spins coupled to P1 centers can be polarized directly by the NV center at the GSLAC, through a giant effective nuclear $g$-factor arising from the NV center-P1 center-nuclear spin coupling. We report on new alternative for measuring defect concentration in the vicinity of NV centers and on the optical signatures of interacting, mutually aligned NV centers. △ Less

Submitted 19 June, 2020; v1 submitted 9 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 103, 035307 (2021)

Emergence of quantum critical charge and spin-state fluctuations near the pressure-induced Mott transition in MnO, FeO, CoO, and NiO

Authors: I. Leonov, A. O. Shorikov, V. I. Anisimov, I. A. Abrikosov

Abstract: We perform a comprehensive theoretical study of the pressure-induced evolution of the electronic structure, magnetic state, and phase stability of the late transition metal monoxides MnO, FeO, CoO, and NiO using a fully charge self-consistent DFT+dynamical mean-field theory method. Our results reveal that the pressure-induced Mott insulator-to-metal phase transition in MnO-NiO is accompanied by a… ▽ More We perform a comprehensive theoretical study of the pressure-induced evolution of the electronic structure, magnetic state, and phase stability of the late transition metal monoxides MnO, FeO, CoO, and NiO using a fully charge self-consistent DFT+dynamical mean-field theory method. Our results reveal that the pressure-induced Mott insulator-to-metal phase transition in MnO-NiO is accompanied by a simultaneous collapse of local magnetic moments and lattice volume, implying a complex interplay between chemical bonding and electronic correlations. We compute the pressure-induced evolution of relative weights of the different valence states and spin-state configurations. Employing the concept of fluctuating valence in a correlated solid, we demonstrate that in MnO, FeO, and CoO a Mott insulator-metal transition and collapse of the local moments is accompanied by a sharp crossover of the spin-state and valence configurations. Our microscopic explanation of the magnetic collapse differs from the accepted picture and points out a remarkable dynamical coexistence (frustration) of the high-, intermediate-, and low-spin states. In particular, in MnO, the magnetic collapse is found to be driven by the appearance of the intermediate-spin state (IS), competing with the low-spin (LS) state; in FeO, we observe a conventional high-spin to low-spin (HS-LS) crossover. Most interestingly, in CoO, we obtain a remarkable (dynamical) coexistence of the HS and LS states, i.e., a HS-LS frustration, up to high pressure. Our results demonstrate the importance of quantum fluctuations of the valence and spin states for the understanding of quantum criticality of the Mott transitions. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Comments: 11 pages, 10 figures

Journal ref: Phys. Rev. B 101, 245144 (2020)

Elinvar effect in $β-$Ti simulated by on-the-fly trained moment tensor potential

Authors: Alexander V. Shapeev, Evgeny V. Podryabinkin, Konstantin Gubaev, Ferenc Tasnádi, Igor A. Abrikosov

Abstract: A combination of quantum mechanics calculations with machine learning (ML) techniques can lead to a paradigm shift in our ability to predict materials properties from first principles. Here we show that on-the-fly training of an interatomic potential described through moment tensors provides the same accuracy as state-of-the-art {\it ab inito} molecular dynamics in predicting high-temperature elas… ▽ More A combination of quantum mechanics calculations with machine learning (ML) techniques can lead to a paradigm shift in our ability to predict materials properties from first principles. Here we show that on-the-fly training of an interatomic potential described through moment tensors provides the same accuracy as state-of-the-art {\it ab inito} molecular dynamics in predicting high-temperature elastic properties of materials with two orders of magnitude less computational effort. Using the technique, we investigate high-temperature bcc phase of titanium and predict very weak, Elinvar, temperature dependence of its elastic moduli, similar to the behavior of the so-called GUM Ti-based alloys [T. Sato {\ it et al.}, Science {\bf 300}, 464 (2003)]. Given the fact that GUM alloys have complex chemical compositions and operate at room temperature, Elinvar properties of elemental bcc-Ti observed in the wide temperature interval 1100--1700 K is unique. △ Less

Submitted 9 May, 2020; originally announced May 2020.

Comments: 15 pages, 4 figures

Mott and spin-Peierls physics in TiPO$_4$ under high pressure

Authors: H. Johan M. Jönsson, Marcus Ekholm, Silke Biermann, Maxim Bykov, Igor A. Abrikosov

Abstract: TiPO$_4$ is a Mott insulator and one of few inorganic compounds featuring a spin-Peierls phase at low temperature. Recent experimental studies have suggested the presence of spin-Peierls dimerization also at ambient temperature though at high pressure. Here, we present a combined experimental and theoretical study of the energetics of the high-pressure phase. We analyse dimerization properties and… ▽ More TiPO$_4$ is a Mott insulator and one of few inorganic compounds featuring a spin-Peierls phase at low temperature. Recent experimental studies have suggested the presence of spin-Peierls dimerization also at ambient temperature though at high pressure. Here, we present a combined experimental and theoretical study of the energetics of the high-pressure phase. We analyse dimerization properties and their coupling to spin degrees of freedom. Most importantly, we argue that TiPO$_4$ resents a direct analogue to the celebrated binary transition metal oxide VO$_2$. TiPO$_4$ allows to assess spin-dimer physics in the high-pressure regime in a controlled fashion, having the potential to become an important model system representative of the class of dimerized transition metal oxides. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Strength, transformation toughening and fracture dynamics of rocksalt-structure Ti1-xAlxN (0 <= x <= 0.75) alloys

Authors: D. G. Sangiovanni, F. Tasnadi, L. J. S. Johnson, M. Oden, I. A. Abrikosov

Abstract: Ab initio-calculated ideal strength and toughness describe the upper limits for mechanical properties attainable in real systems and can, therefore, be used in selection criteria for materials design. We employ density-functional ab initio molecular dynamics (AIMD) to investigate the mechanical properties of defect-free rocksalt-structure (B1) TiN and B1 Ti1-xAlxN (x = 0.25, 0.5, 0.75) solid solut… ▽ More Ab initio-calculated ideal strength and toughness describe the upper limits for mechanical properties attainable in real systems and can, therefore, be used in selection criteria for materials design. We employ density-functional ab initio molecular dynamics (AIMD) to investigate the mechanical properties of defect-free rocksalt-structure (B1) TiN and B1 Ti1-xAlxN (x = 0.25, 0.5, 0.75) solid solutions subject to [001], [110], and [111] tensile deformation at room temperature. We determine the alloys' ideal strength and toughness, elastic responses, and ability to plastically deform up to fracture as a function of the Al content. Overall, TiN exhibits greater ideal moduli of resilience and tensile strengths than TiAlN solid solutions. Nevertheless, AIMD modelingshows that, irrespective of the strain direction, the binary compound systematically fractures by brittle cleavage at its yield point. The simulations also indicate that Ti0.5Al0.5N and Ti0.25Al0.75N solid solutions are inherently more resistant to fracture and possess much greater toughness than TiN, due to the activation of local structural transformations (primarily of B1 -> wurtzite type) beyond the elastic-response regime. In sharp contrast, TiAlN alloys with 25% Al exhibit similar brittleness as TiN. The results of this work are examples of the limitations of elasticity-based criteria for prediction of strength, brittleness, ductility, and toughness in materials able to undergo phase transitions with loading. Furthermore, comparing present and previous findings, we suggest a general principle for design of hard ceramic solid solutions that are thermodynamically inclined to dissipate extreme mechanical stresses via transformation toughening mechanisms. △ Less

Submitted 14 February, 2020; v1 submitted 13 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Materials 4, 033605 (2020)

Anharmonicity and Ultra-Low Thermal Conductivity in Lead-Free Halide Double Perovskites

Authors: Johan Klarbring, Olle Hellman, Igor A. Abrikosov, Sergei I. Simak

Abstract: The lead-free halide double perovskite class of materials offers a promising venue for resolving issues related to toxicity of Pb and long-term stability of the lead-containing halide perovskites. We present a first-principles study of the lattice vibrations in Cs$_2$AgBiBr$_6$ , the prototypical compound in this class, and show that the lattice dynamics of Cs$_2$AgBiBr$_6$ is highly anharmonic, l… ▽ More The lead-free halide double perovskite class of materials offers a promising venue for resolving issues related to toxicity of Pb and long-term stability of the lead-containing halide perovskites. We present a first-principles study of the lattice vibrations in Cs$_2$AgBiBr$_6$ , the prototypical compound in this class, and show that the lattice dynamics of Cs$_2$AgBiBr$_6$ is highly anharmonic, largely in regards to tilting of AgBr$_6$ and BiBr$_6$ octahedra. Using an energy and temperature dependent phonon spectral function, we then show how the experimentally observed cubic-to-tetragonal phase transformation is caused by the collapse of a soft phonon branch. We finally reveal that the softness and anharmonicity of Cs$_2$AgBiBr$_6$ yield an ultra-low thermal conductivity, unexpected of high symmetry cubic structures. △ Less

Submitted 11 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Lett. 125, 045701 (2020)

Charge disproportionation and site-selective local magnetic moments in the post-perovskite-type Fe$_2$O$_3$ under ultra-high pressures

Authors: I. Leonov, G. Kh. Rozenberg, I. A. Abrikosov

Abstract: The archetypal $3d$ Mott insulator hematite, Fe$_2$O$_3$, is one of the basic oxide components playing an important role in mineralogy of Earth's lower mantle. Its high pressure-temperature behavior, such as the electronic properties, equation of state, and phase stability is of fundamental importance for understanding the properties and evolution of the Earth's interior. Here, we study the electr… ▽ More The archetypal $3d$ Mott insulator hematite, Fe$_2$O$_3$, is one of the basic oxide components playing an important role in mineralogy of Earth's lower mantle. Its high pressure-temperature behavior, such as the electronic properties, equation of state, and phase stability is of fundamental importance for understanding the properties and evolution of the Earth's interior. Here, we study the electronic structure, magnetic state, and lattice stability of Fe$_2$O$_3$ at ultra-high pressures using the density functional plus dynamical mean-field theory (DFT+DMFT) approach. In the vicinity of a Mott transition, Fe$_2$O$_3$ is found to exhibit a series of complex electronic, magnetic, and structural transformations. In particular, it makes a phase transition to a metal with a post-perovskite crystal structure and site-selective local moments upon compression above 75 GPa. We show that the site-selective phase transition is accompanied by a charge disproportionation of Fe ions, with Fe$^{3\pm δ}$ and $δ\sim 0.05$-$0.09$, implying a complex interplay between electronic correlations and the lattice. Our results suggest that site-selective local moments in Fe$_2$O$_3$ persist up to ultra-high pressures of $\sim$200-250 GPa, i.e., sufficiently above the core-mantle boundary. The latter can have important consequences for understanding of the velocity and density anomalies in the Earth's lower mantle. △ Less

Submitted 3 October, 2019; originally announced October 2019.

Comments: 7 pages, 5 figures, supplementary

Journal ref: npj. Comput. Mater. 5, 90 (2019)

Superionic-like diffusion in an elemental crystal: bcc Titanium

Authors: D. G. Sangiovanni, J. Klarbring, D. Smirnova, N. V. Skripnyak, D. Gambino, M. Mrovec, S. I. Simak, I. A. Abrikosov

Abstract: Recent theoretical investigations [Belonoshko et al. Nature Geoscience 10, 312 (2017)] revealed occurrence of concerted migration of several atoms in bcc Fe at inner-core temperatures and pressures. Here, we combine first-principles and semi-empirical atomistic simulations to show that a diffusion mechanism analogous to the one predicted for bcc iron at extreme conditions is also operative and of… ▽ More Recent theoretical investigations [Belonoshko et al. Nature Geoscience 10, 312 (2017)] revealed occurrence of concerted migration of several atoms in bcc Fe at inner-core temperatures and pressures. Here, we combine first-principles and semi-empirical atomistic simulations to show that a diffusion mechanism analogous to the one predicted for bcc iron at extreme conditions is also operative and of relevance for the high-temperature bcc phase of pure Ti at ambient pressure. The mechanism entails a rapid collective movement of numerous (from two to dozens) neighbors along tangled closed-loop paths in defect-free crystal regions. We argue that this phenomenon closely resembles the diffusion behavior of superionics and liquid metals. Furthermore, we suggest that concerted migration is the atomistic manifestation of vanishingly small w-mode phonon frequencies previously detected via neutron scattering and the mechanism underlying anomalously large and markedly non-Arrhenius self-diffusivities characteristic of bcc Ti. △ Less

Submitted 24 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Lett. 123, 105501 (2019)

Quantum well stabilized point defect spin qubits

Authors: Ivády, J. Davidsson, N. Delegan, A. L. Falk, P. V. Klimov, S. J. Whiteley, S. O. Hruszkewycz, M. V. Holt, F. J. Heremans, N. T. Son, D. D. Awschalom, I. A. Abrikosov, A. Gali

Abstract: Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engine… ▽ More Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits. △ Less

Submitted 21 April, 2020; v1 submitted 28 May, 2019; originally announced May 2019.

Journal ref: Nat Commun 10, 5607 (2019)

Inverse pressure-induced Mott transition in TiPO$_4$

Authors: H. Johan M. Jönsson, Marcus Ekholm, Maxim Bykov, Leonid Dubrovinsky, Sander van Smaalen, Igor A. Abrikosov

Abstract: TiPO$_4$ shows interesting structural and magnetic properties as temperature and pressure are varied, such as a spin-Peierls phase transition and the development of incommensurate modulations of the lattice. Recently, high pressure experiments for TiPO$_4$ reported two new structural phases appearing at high pressures, the so-called phases IV and V [M. Bykov et al., Angew. Chem. Int. Ed. 55, 15053… ▽ More TiPO$_4$ shows interesting structural and magnetic properties as temperature and pressure are varied, such as a spin-Peierls phase transition and the development of incommensurate modulations of the lattice. Recently, high pressure experiments for TiPO$_4$ reported two new structural phases appearing at high pressures, the so-called phases IV and V [M. Bykov et al., Angew. Chem. Int. Ed. 55, 15053]. The latter was shown to include the first example of 5-fold O-coordinated P-atoms in an inorganic phosphate compound. In this work we characterize the electronic structure and other physical properties of these new phases by means of ab-initio calculations, and investigate the structural transition. We find that the appearance of phases IV and V coincides with a collapse of the Mott insulating gap and quenching of magnetism in phase III as pressure is applied. Remarkably, our calculations show that in the high pressure phase V, these features reappear, leading to an antiferromagnetic Mott insulating phase, with robust local moments. △ Less

Submitted 26 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. B 99, 245132 (2019)

High-pressure synthesis of ultraincompressible hard rhenium nitride pernitride Re$_{2}$(N$_{2}$)N$_{2}$ stable at ambient conditions

Authors: Maxim Bykov, Stella Chariton, Hongzhan Fei, Timofey Fedotenko, Georgios Aprilis, Alena V. Ponomareva, Ferenc Tasnádi, Igor A. Abrikosov, Benoit Merle, Patrick Feldner, Sebastian Vogel, Wolfgang Schnick, Vitali B. Prakapenka, Eran Greenberg, Michael Hanfland, Anna Pakhomova, Hanns-Peter Liermann, Tomoo Katsura, Natalia Dubrovinskaia, Leonid Dubrovinsky

Abstract: Here we report the synthesis of metallic, ultraincompressible (bulk modulus $K_{0}$ = 428(10) GPa) and very hard (nanoindentation hardness 36.7(8) GPa) rhenium (V) nitride pernitride Re$_{2}$(N$_{2}$)N$_{2}$. While the empirical chemical formula of the compound, ReN$_{2}$, is the same as for other known transition metals pernitrides, e.g. IrN$_{2}$, PtN$_{2}$, PdN$_{2}$ and OsN$_{2}$, its crystal… ▽ More Here we report the synthesis of metallic, ultraincompressible (bulk modulus $K_{0}$ = 428(10) GPa) and very hard (nanoindentation hardness 36.7(8) GPa) rhenium (V) nitride pernitride Re$_{2}$(N$_{2}$)N$_{2}$. While the empirical chemical formula of the compound, ReN$_{2}$, is the same as for other known transition metals pernitrides, e.g. IrN$_{2}$, PtN$_{2}$, PdN$_{2}$ and OsN$_{2}$, its crystal chemistry is unique. The known pernitrides of transition metals consist of a metal in the oxidation state +IV and pernitride anions N$_{2}^{4-}$. ReN$_{2}$ contains both pernitride N$_{2}^{4-}$ and discrete N$^{3-}$ anions, which explains its exceptional properties. Moreover, in the original experimental synthesis of Re$_{2}$(N$_{2}$)N$_{2}$ performed in a laser-heated diamond anvil cell via a direct reaction between rhenium and nitrogen at pressures from 40 to 90 GPa we observed that the material was recoverable at ambient conditions. Consequently, we developed a route to scale up its synthesis through a reaction between rhenium and ammonium azide, NH$_{4}$N$_{3}$, in a large-volume press at 33 GPa. Our work resulted not only in a discovery of a novel material with unusual crystal chemistry and a set of properties attractive for potential applications, but also demonstrated a feasibility of surmounting conceptions common in material sciences. △ Less

Submitted 25 February, 2019; originally announced February 2019.

Journal ref: Nat Commun 10, 2994 (2019)

Assessing the SCAN functional for itinerant electron ferromagnets

Authors: M. Ekholm, D. Gambino, H. J. M. Jönsson, F. Tasnádi, B. Alling, I. A. Abrikosov

Abstract: Density functional theory is a standard model for condensed matter theory and computational material science. The accuracy of density functional theory is limited by accuracy of the employed approximation to the exchange-correlation functional. Recently, the so-called strongly constrained approprietly normed (SCAN) functional has received a lot of attention due to promising results for covalent, m… ▽ More Density functional theory is a standard model for condensed matter theory and computational material science. The accuracy of density functional theory is limited by accuracy of the employed approximation to the exchange-correlation functional. Recently, the so-called strongly constrained approprietly normed (SCAN) functional has received a lot of attention due to promising results for covalent, metallic, ionic, as well as hydrogen- and van der Waals-bonded systems alike. In this work we focus on assessing the performance of the SCAN functional for itinerant magnets by calculating basic structural and magnetic properties of the transition metals Fe, Co and Ni. We find that although structural properties of bcc-Fe seem to be in good agreement with experiment, SCAN performs worse than standard local and semilocal functionals for fcc-Ni and hcp-Co. In all three cases, the magnetic moment is significantly overestimated by SCAN, and the $3d$ states are shifted to lower energies, as compared to experiments. △ Less

Submitted 29 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. B 98, 094413 (2018)

Identification of Si-vacancy related room temperature qubits in 4H silicon carbide

Authors: Viktor Ivády, Joel Davidsson, Nguyen Tien Son, Takeshi Ohshima, Igor A. Abrikosov, Adam Gali

Abstract: Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, still… ▽ More Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, still two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett.\ \textbf{115}, 247602 (2015)] are argued as an origin. By means of high precision first principles calculations and high resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room temperature optical readout. △ Less

Submitted 13 October, 2017; v1 submitted 21 August, 2017; originally announced August 2017.

Comments: 3 figures

Journal ref: Phys. Rev. B 96, 161114 (2017)

First principles predictions of magneto-optical data for semiconductor defects: the case of divacancy defects in 4H-SiC

Authors: Joel Davidsson, Viktor Ivády, Rickard Armiento, N. T. Son, Adam Gali, Igor Abrikosov

Abstract: Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. Multi-compone… ▽ More Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. Multi-component semiconductors often host two or more non-equivalent configurations of point defects. These configurations generally exhibit similar electronic structure and basic functionalities, however, they differ in details that are of great importance whenever single defect applications are considered. Identification of non-equivalent configurations of point defects is thus essential for successful single defect manipulation and application. A promising way to identify defects is via comparison of experimental measurements and results of first-principle calculations. We investigate a possibility to produce accurate ab initio data for zero-phonon lines and hyperfine coupling parameters that are required for systematic quantum bit search. We focus on properties relevant for the possible use of the divacancy defect in quantum bits in 4H-SiC. We provide a decisive identification of divacancy configurations in 4H-SiC and clarify differences in prior predictions of 4H-SiC divacancy zero-phonon photoluminescence lines. △ Less

Submitted 15 August, 2017; originally announced August 2017.

Journal ref: New J. of Phys 20, 023035 (2018)

Hybrid-DFT+V$_w$ method for accurate band structure of correlated transition metal compounds: the case of cerium dioxide

Authors: Viktor Ivády, Adam Gali, Igor A. Abrikosov

Abstract: Hybrid functionals' non-local exchange-correlation potential contains a derivative discontinuity that improves on standard semi-local density functional theory (DFT) band gaps. Moreover, by careful parameterization, hybrid functionals can provide self-interaction reduced description of selected states. On the other hand, the uniform description of all the electronic states of a given system is a k… ▽ More Hybrid functionals' non-local exchange-correlation potential contains a derivative discontinuity that improves on standard semi-local density functional theory (DFT) band gaps. Moreover, by careful parameterization, hybrid functionals can provide self-interaction reduced description of selected states. On the other hand, the uniform description of all the electronic states of a given system is a know drawback of these functionals that causes varying accuracy in the description of states with different degrees of localization. This limitation can be remedied by the orbital dependent exact exchange extension of hybrid functionals; the hybrid-DFT+V$_w$ method [V. Iv{á}dy, et al., Phys. Rev. B 90, 035146 (2014)]. Based on the analogy of quasi-particle equations and hybrid-DFT single particle equations, here we demonstrate that parameters of hybrid-DFT+V$_w$ functional can be determined from approximate quasi-particle spectra. The proposed technique leads to a reduction of self-interaction and provides improved description for both $s$ / $p$ and $d$ / $f$-electrons of the simulated system. The performance of our charge self-consistent method is illustrated on the electronic structure calculation of cerium dioxide where good agreement with both quasi-particle and experimental spectra is achieved. △ Less

Submitted 13 June, 2017; originally announced June 2017.

Journal ref: J. Phys.: Condens. Matter 29 (2017) 454002

Theoretical and experimental evidence of a site-selective Mott transition in Fe2O3 under pressure

Authors: E. Greenberg, I. Leonov, S. Layek, Z. Konopkova, M. P. Pasternak, L. Dubrovinsky, R. Jeanloz, I. A. Abrikosov, G. Kh. Rozenberg

Abstract: We provide experimental and theoretical evidence for a novel type of pressure-induced insulator-metal transition characterized by site-selective delocalization of the electrons. Mössbauer spectroscopy, X-ray diffraction and electrical transport measurements on Fe$_2$O$_3$ to 100 GPa, along with dynamical mean-field theory (DFT+DMFT) calculations, reveal this site-selective Mott transition between… ▽ More We provide experimental and theoretical evidence for a novel type of pressure-induced insulator-metal transition characterized by site-selective delocalization of the electrons. Mössbauer spectroscopy, X-ray diffraction and electrical transport measurements on Fe$_2$O$_3$ to 100 GPa, along with dynamical mean-field theory (DFT+DMFT) calculations, reveal this site-selective Mott transition between 50 and 68 GPa, such that the metallization can be described by ($^\rm{VI}$Fe$^{3+\rm{HS}}$)$_2$O$_3$ [$R\bar{3}c$ structure] $\overrightarrow{\tiny\rm{50~GPa}}$ ($^\rm{VIII}$Fe$^{3+\rm{HS~VI}}$Fe$^\rm{M}$)O$_3$ [$P2_1/n$ structure] $\overrightarrow{\tiny\rm{68~GPa}}$ ($^\rm{VI}$Fe$^\rm{M}$)$_2$O$_3$ [$Aba2$ structure]. Within the $P2_1/n$ crystal structure, characterized by two distinct coordination sites (VI and VIII), we observe equal abundances of ferric ions (Fe$^{3+}$) and ions having delocalized electrons (Fe$^\rm{M}$), and only at higher pressures is a fully metallic $Aba2$ structure obtained, all at room temperature. The transition is characterized by delocalization/metallization of the $3d$ electrons on half the Fe sites, with a site-dependent collapse of local moments. Above $\sim$50 GPa, Fe$_2$O$_3$ is a strongly correlated metal with reduced electron mobility (large band renormalizations) of m*/m$\sim$4 and 6 near the Fermi level. Upon decompression, we observe a site-selective (metallic) to conventional Mott insulator phase transition ($^\rm{VIII}$Fe$^{3+\rm{HS~VI}}$Fe$^\rm{M}$)O$_3$ $\overrightarrow{\tiny\rm{50~GPa}}$ ($^\rm{VIII}$Fe$^{3+\rm{HS~VI}}$Fe$^{3+ \rm{HS}}$)O$_3$ within the same $P2_1/n$ structure, indicating a decoupling of the electronic and lattice degrees of freedom, characteristic of a true Mott transition. Our results show that the interplay of electronic correlations and lattice may result in rather complex behavior of the electronic structure and magnetic state. △ Less

Submitted 8 June, 2017; originally announced June 2017.

Comments: 18 pages, 5 figures

Journal ref: Phys. Rev. X 8, 031059 (2018)

Pressure-induced spin-state transition of iron in magnesiowüstite (Fe,Mg)O

Authors: I. Leonov, A. Ponomareva, R. Nazarov, I. A. Abrikosov

Abstract: We present a detailed theoretical study of the electronic, magnetic, and structural properties of magnesiowüstite Fe$_{1-x}$Mg$_x$O with $x$ in the range between 0$-$0.875 using a fully charge self-consistent implementation of the density functional theory plus dynamical mean-field theory (DFT+DMFT) method. In particular, we compute the electronic structure and phase stability of the rock-salt B1-… ▽ More We present a detailed theoretical study of the electronic, magnetic, and structural properties of magnesiowüstite Fe$_{1-x}$Mg$_x$O with $x$ in the range between 0$-$0.875 using a fully charge self-consistent implementation of the density functional theory plus dynamical mean-field theory (DFT+DMFT) method. In particular, we compute the electronic structure and phase stability of the rock-salt B1-structured (Fe,Mg)O at high pressures relevant for the Earth's lower mantle. We obtain that upon compression paramagnetic (Fe,Mg)O exhibits a spin-state transition of Fe$^{2+}$ ions from a high-spin to low-spin (HS-LS) state which is accompanied by a collapse of local magnetic moments. The HS-LS transition results in a substantial drop of the lattice volume by about 4$-$8 %, implying a complex interplay between electronic and lattice degrees of freedom. Our results reveal a strong sensitivity of the calculated transition pressure $P_{\rm tr.}$ upon addition of Mg. While for Fe-rich magnesiowüstite, Mg $x < 0.5$, $P_{\rm tr.}$ exhibits a rather weak variation at $\sim$80 GPa, for Fe-poor (Fe,Mg)O it drops, e.g., by about 35 % to 52 GPa for Mg $x=0.75$. This behavior is accompanied by a substantial change of the spin transition range from 50$-$140 GPa in FeO to 30$-$90 GPa for $x=0.75$. In addition, the calculated bulk modulus (in the HS state) is found to increase by $\sim$12 % from 142 GPa in FeO to 159 GPa in (Fe,Mg)O with Mg $x=0.875$. We find that the pressure-induced HS-LS transition has different consequences for the electronic properties of the Fe-rich and poor (Fe,Mg)O. For the Fe-rich (Fe,Mg)O, the transition is found to be accompanied by a Mott insulator to (semi-) metal phase transition. In contrast to that, for $x>0.25$, (Fe,Mg)O remains insulating up to the highest studied pressures, implying a Mott insulator to band insulator phase transition at the HS-LS transformation. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 96, 075136 (2017)