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Ion Current Rectification and Long-Range Interference in Conical Silicon Micropores
Authors:
Mark Aarts,
Willem Boon,
Blaise Cuénod,
M. Dijkstra,
René van Roij,
Esther Alarcon-Llado
Abstract:
Fluidic devices exhibiting ion current rectification (ICR), or ionic diodes, are of broad interest for applications including desalination, energy harvesting, and sensing, amongst others. For such applications a large conductance is desirable which can be achieved by simultaneously using thin membranes and wide pores. In this paper we demonstrate ICR in micron sized conical channels in a thin sili…
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Fluidic devices exhibiting ion current rectification (ICR), or ionic diodes, are of broad interest for applications including desalination, energy harvesting, and sensing, amongst others. For such applications a large conductance is desirable which can be achieved by simultaneously using thin membranes and wide pores. In this paper we demonstrate ICR in micron sized conical channels in a thin silicon membrane with pore diameters comparable to the membrane thickness but both much larger than the electrolyte screening length. We show that for these pores the entrance resistance is not only key to Ohmic conductance around 0 V, but also for understanding ICR, both of which we measure experimentally and capture within a single analytic theoretical framework. The only fit parameter in this theory is the membrane surface potential, for which we find that it is voltage dependent and its value is excessively large compared to literature. From this we infer that surface charge outside the pore strongly contributes to the observed Ohmic conductance and rectification by a different extent. We experimentally verify this hypothesis in a small array of pores and find that ICR vanishes due to pore-pore interactions mediated through the membrane surface, while Ohmic conductance around 0 V remains unaffected. We find that the pore-pore interaction for ICR is set by a long-ranged decay of the concentration which explains the surprising finding that the ICR vanishes for even a sparsely populated array with a pore-pore spacing as large as 7 $μ$m.
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Submitted 7 October, 2022; v1 submitted 28 June, 2022;
originally announced June 2022.
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Phase-transitions in spin-crossover thin films probed by graphene transport measurements
Authors:
J. Dugay,
M. Aarts,
M. Giménez-Marqués,
T. Kozlova,
H. W. Zandbergen,
E. Coronado,
H. S. J van der Zant
Abstract:
Future multi-functional hybrid devices might combine switchable molecules and 2D material-based devices. Spin-crossover compounds are of particular interest in this context since they exhibit bistability and memory effects at room temperature while responding to numerous external stimuli. Atomically-thin 2D materials such as graphene attract a lot of attention for their fascinating electrical, opt…
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Future multi-functional hybrid devices might combine switchable molecules and 2D material-based devices. Spin-crossover compounds are of particular interest in this context since they exhibit bistability and memory effects at room temperature while responding to numerous external stimuli. Atomically-thin 2D materials such as graphene attract a lot of attention for their fascinating electrical, optical, and mechanical properties, but also for their reliability for room-temperature operations. Here, we demonstrate that thermally-induced spin-state switching of spin-crossover nanoparticle thin films can be monitored through the electrical transport properties of graphene lying underneath the films. Model calculations indicate that the charge carrier scattering mechanism in graphene is sensitive to the spin-state dependence of the relative dielectric constants of the spin-crossover nanoparticles. This graphene sensor approach can be applied to a wide class of (molecular) systems with tunable electronic polarizabilities.
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Submitted 15 September, 2016;
originally announced September 2016.
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The Spintronic Properties of Rare Earth Nitrides
Authors:
C. M. Aerts,
P. Strange,
M. Horne,
W. M. Temmerman,
Z. Szotek,
A. Svane
Abstract:
The electronic structure of the rare earth nitrides is studied systematically using the {\it ab-initio} self-interaction corrected local-spin-density approximation (SIC-LSD). This approach allows both a localised description of the rare earth $f-$electrons and an itinerant description of the valence electrons. Localising different numbers of $f$-electrons on the rare earth atom corresponds to di…
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The electronic structure of the rare earth nitrides is studied systematically using the {\it ab-initio} self-interaction corrected local-spin-density approximation (SIC-LSD). This approach allows both a localised description of the rare earth $f-$electrons and an itinerant description of the valence electrons. Localising different numbers of $f$-electrons on the rare earth atom corresponds to different valencies, and the total energies can be compared, providing a first-principles description of valence. CeN is found to be tetravalent while the remaining rare earth nitrides are found to be trivalent. We show that these materials have a broad range of electronic properties including forming a new class of half-metallic magnets with high magnetic moments and are strong candidates for applications in spintronic and spin-filtering devices.
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Submitted 18 August, 2003;
originally announced August 2003.
