Showing 1–1 of 1 results for author: Aarnink, A A I

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

Authors: P. C. Spruijtenburg, J. Ridderbos, F. Mueller, A. W. Leenstra, M. Brauns, A. A. I. Aarnink, W. G. van der Wiel, F. A. Zwanenburg

Abstract: In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET… ▽ More In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states. △ Less

Submitted 17 April, 2013; v1 submitted 10 April, 2013; originally announced April 2013.

Comments: 4 pages, 4 figures. This article has been submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 102, 192105 (2013)