Electrical Characterization of SiPM as a Function of Test Frequency and Temperature
Authors:
M. J. Boschini,
C. Consolandi,
P. G. Fallica,
M. Gervasi,
D. Grandi,
M. Mazzillo,
S. Pensotti,
P. G. Rancoita,
D. Sanfilippo,
M. Tacconi,
G. Valvo
Abstract:
Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of test devices - manufactured by ST Microelectronics - are presented. SiPMs with an area of 3.5x3.5 micron^2 and a cell pitch of 54 micron were manufactured as array…
▽ More
Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of test devices - manufactured by ST Microelectronics - are presented. SiPMs with an area of 3.5x3.5 micron^2 and a cell pitch of 54 micron were manufactured as arrays of 64x64 cells and exhibiting a fill factor of 31%. The capacitance of SiPMs was measured as a function of reverse bias voltage at frequencies ranging from from 20 Hz up to 1 MHz and temperatures from 300 K down to 85 K. While leakage currents were measured at temperatures from 400 K down to 85 K. Thus, the threshold voltage - i.e., voltage corresponding to that at which the multiplication regime for the leakage current begins - could be determined as a function of temperature. Finally, an electrical model suited to reproduce the dependence of the frequency dependence of capacitance is presented.
△ Less
Submitted 10 January, 2012; v1 submitted 1 December, 2011;
originally announced December 2011.