Showing 1–11 of 11 results for author: Kawahito, S

Evaluation of the X-ray SOI pixel detector with the on-chip ADC

Authors: Hiroumi Matsuhashi, Kouichi Hagino, Aya Bamba, Ayaki Takeda, Masataka Yukumoto, Koji Mori, Yusuke Nishioka, Takeshi Go Tsuru, Mizuki Uenomachi, Tomonori Ikeda, Masamune Matsuda, Takuto Narita, Hiromasa Suzuki, Takaaki Tanaka, Ikuo Kurachi, Takayoshi Kohmura, Yusuke Uchida, Yasuo Arai, Shoji Kawahito

Abstract: XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rmμ$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray satellites. To mount on satellites, it is essential that the ADC (analog-to-digital converter) be implemented on the detector because such peripheral circuits must… ▽ More XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rmμ$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray satellites. To mount on satellites, it is essential that the ADC (analog-to-digital converter) be implemented on the detector because such peripheral circuits must be as compact as possible to achieve a large imaging area in the limited space in satellites. Thus, we developed a new XRPIX device with the on-chip ADC, and evaluated its performances. As the results, the integral non-linearity was evaluated to be 6 LSB (least significant bit), equivalent to 36 eV. The differential non-linearity was less than 0.7 LSB, and input noise from the on-chip ADC was 5~$\rm{e^{-}}$. Also, we evaluated end-to-end performance including the sensor part as well as the on-chip ADC. As the results, energy resolution at 5.9 keV was 294 $\rm{\pm}$ 4 eV in full-width at half maximum for the best pixel. △ Less

Submitted 10 May, 2024; v1 submitted 9 May, 2024; originally announced May 2024.

Comments: 17 pages, 9 figures, NIMA, accepted

Journal ref: Nuclear Instruments and Methods in Physics Research section A (NIM-A) 2024

Single Event Tolerance of X-ray SOI Pixel Sensors

Authors: Kouichi Hagino, Mitsuki Hayashida, Takayoshi Kohmura, Toshiki Doi, Shun Tsunomachi, Masatoshi Kitajima, Takeshi G. Tsuru, Hiroyuki Uchida, Kazuho Kayama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Masataka Yukumoto, Kira Mieda, Syuto Yonemura, Tatsunori Ishida, Takaaki Tanaka, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

Abstract: We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cr… ▽ More We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Comments: 9 pages, 5 figures, accepted for publication in JATIS

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Authors: Mitsuki Hayashida, Kouichi Hagino, Takayoshi Kohmura, Masatoshi Kitajima, Keigo Yarita, Kenji Oono, Kousuke Negishi, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

Abstract: X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-… ▽ More X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise. △ Less

Submitted 11 August, 2021; originally announced August 2021.

Comments: 15 pages, 16 figures, accepted for publication in JATIS

Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"

Authors: Ryota Kodama, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Yuki Amano, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Masataka Yukumoto, Takahiro Hida, Yasuo Arai, Ikuo Kurachi, Takayoshi Kohmura, Kouichi Hagino, Mitsuki Hayashida, Masatoshi Kitajima, Shoji Kawahito, Keita Yasutomi, Hiroki Kamehama

Abstract: We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit… ▽ More We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the "XRPIX6E" device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0.68 keV and Al-K X-rays at 1.5 keV are successfully detected in the "Frame readout mode", in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1.1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ~$18~e^-$ (rms) and ~$13~e^-$ (rms), respectively. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Comments: 8 pages, 10 figures, accepted for publication in NIMA, proceedings of the 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector (HSTD12)

Subpixel Response of SOI Pixel Sensor for X-ray Astronomy with Pinned Depleted Diode: First Result from Mesh Experiment

Authors: Kazuho Kayama, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Yuki Amano, Junko S. Hiraga, Masayuki Yoshida, Yasuaki Kamata, Shotaro Sakuma, Daito Yuhi, Yukino Urabe, Hiroshi Tsunemi, Hideaki Matsumura, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Yasuo Arai, Ikuo Kurachi, Ayaki Takeda, Koji Mori , et al. (9 additional authors not shown)

Abstract: We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully… ▽ More We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 $μ$ m CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 $μ$ s time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution. △ Less

Submitted 26 May, 2019; originally announced May 2019.

Comments: 10 pages, 7 figures, , Conference proceedings for PIXEL2018

Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area

Authors: Hideki Hayashi, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Hideaki Matsumura, Katsuhiro Tachibana, Sodai Harada, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi, Kenji Oono , et al. (1 additional authors not shown)

Abstract: We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processe… ▽ More We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processed ``XRPIX5b'' with the largest imaging area of 21.9~mm $\times$ 13.8~mm in the XRPIX series. X-ray spectra are successfully obtained from all the pixels, and the readout noise is 46~e$^-$~(rms) in the frame readout mode. The gain variation was measured to be 1.2\%~(FWHM) among the pixels. We successfully obtain the X-ray image in the event-driven readout mode. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Comments: 5 pages, 9 figures

Journal ref: Nuclear Inst. and Methods in Physics Research, A 924 (2019) 400-403

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Authors: Takaaki Tanaka, Takeshi Go Tsuru, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Kazuho Kayama, Yuki Amano, Hideaki Matsumura, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Kohei Fukuda, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi , et al. (2 additional authors not shown)

Abstract: We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithi… ▽ More We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity. △ Less

Submitted 14 December, 2018; originally announced December 2018.

Comments: 5 pages, 9 figures, submitted to Conference Record of IEEE NSS-MIC 2018

Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure

Authors: Sodai Harada, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Hideaki Matsumura, Katsuhiro Tachibana, Hideki Hayashi, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi, Kenji Oono , et al. (1 additional authors not shown)

Abstract: We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The… ▽ More We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The current version of XRPIX has lower spectral performance in the Event-Driven readout mode than in the Frame readout mode, which is due to the interference between the sensor layer and the circuit layer. The interference also lowers the gain. In order to suppress the interference, we developed a new device, "XRPIX6E" equipped with the Pinned Depleted Diode structure. A sufficiently highly-doped buried p-well is formed at the interface between the buried oxide layer and the sensor layer, and acts as a shield layer. XRPIX6E exhibits improved spectral performances both in the Event-Driven readout mode and in the Frame readout mode in comparison to previous devices. The energy resolutions in full width at half maximum at 6.4 keV are 236 $\pm$ 1 eV and 335 $\pm$ 4 eV in the Frame and Event-Driven readout modes, respectively. There are differences between the readout noise and the spectral performance in the two modes, which suggests that some mechanism still degrades the performance in the Event-Driven readout mode. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Comments: 13 pages, 5 figures, 1 table, accepted for publication in NIMA on September 27, 2018

Kyoto's Event-Driven X-ray Astronomy SOI pixel sensor for the FORCE mission

Authors: Takeshi G. Tsuru, Hideki Hayashi, Katsuhiro Tachibana, Sodai Harada, Hiroyuki Uchida, Takaaki Tanaka, Yasuo Arai, Ikuo Kurachi, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Takayoshi Kohmura, Kouichi Hagino, Kenji Ohno, Kohsuke Negishi, Keigo Yarita, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Shunta Nakanishi, Hiroki Kamehama , et al. (1 additional authors not shown)

Abstract: We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with… ▽ More We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger output function implemented in each pixel with the time resolution higher than $10~{\rm μsec}$ (Event-Driven readout mode). It allows us to do fast timing observation and also reduces non-X-ray background dominating at a high X-ray energy band above 5--10~keV by adopting an anti-coincidence technique. In this paper, we introduce our latest results from the developments of the XRPIXs. (1) We successfully developed a 3-side buttable back-side illumination device with an imaging area size of 21.9~mm$\times$13.8~mm and an pixel size of $36~{\rm μm} \times 36~{\rm μm}$. The X-ray throughput with the device reaches higher than 0.57~kHz in the Event-Driven readout mode. (2) We developed a device using the double SOI structure and found that the structure improves the spectral performance in the Event-Driven readout mode by suppressing the capacitive coupling interference between the sensor and circuit layers. (3) We also developed a new device equipped with the Pinned Depleted Diode structure and confirmed that the structure reduces the dark current generated at the interface region between the sensor and the SiO$_2$ insulator layers. The device shows an energy resolution of 216~eV in FWHM at 6.4~keV in the Event-Driven readout mode. △ Less

Submitted 29 July, 2018; originally announced July 2018.

Comments: 11 pages, 10 figures, Proceedings Volume 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII

Improvement of Spectroscopic Performance using a Charge-sensitive Amplifier Circuit for an X-Ray Astronomical SOI Pixel Detector

Authors: Ayaki Takeda, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Hideaki Matsumura, Yasuo Arai, Koji Mori, Yusuke Nishioka, Ryota Takenaka, Takayoshi Kohmura, Shinya Nakashima, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Hiroki Kamehama, Sumeet Shrestha

Abstract: We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution ({\rm \sim}1 {\rm μ}s), superior readout time ({\rm \sim}10 {\rm μ}s), and a wide energy range (0.5--40 keV). In the previous study, we successfully demonstrated X-… ▽ More We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution ({\rm \sim}1 {\rm μ}s), superior readout time ({\rm \sim}10 {\rm μ}s), and a wide energy range (0.5--40 keV). In the previous study, we successfully demonstrated X-ray detection by event-driven readout of XRPIX2b. We here report recent improvements in spectroscopic performance. We successfully increased the gain and reduced the readout noise in XRPIX2b by decreasing the parasitic capacitance of the sense-node originated in the buried p-well (BPW). On the other hand, we found significant tail structures in the spectral response due to the loss of the charge collection efficiency when a small BPW is employed. Thus, we increased the gain in XRPIX3b by introducing in-pixel charge sensitive amplifiers instead of having even smaller BPW. We finally achieved the readout noise of 35 e{\rm ^{-}} (rms) and the energy resolution of 320 eV (FWHM) at 6 keV without significant loss of the charge collection efficiency. △ Less

Submitted 21 March, 2016; originally announced March 2016.

Comments: 8 pages, 10 figures, Published for publication in JINST (published 5 June 2015), Conference proceedings for the 7th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2014), 1 - 5 Sep 2014, Niagara Falls

Journal ref: JINST 10 (2015) C06005

Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor

Authors: Takeshi G. Tsuru, Hideaki Matsumura, Ayaki Takeda, Takaaki Tanaka, Shinya Nakashima, Yasuo Arai, Koji Mori, Ryota Takenaka, Yusuke Nishioka, Takayoshi Kohmura, Takaki Hatsui, Takashi Kameshima, Kyosuke Ozaki, Yoshiki Kohmura, Tatsuya Wagai, Dai Takei, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Hiroki Kamehama, Sumeet Shrestha

Abstract: We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A f… ▽ More We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$α$ and K$β$. Moreover, we produced a fully depleted layer with a thickness of $500~{\rm μm}$. The event-driven readout mode has already been successfully demonstrated. △ Less

Submitted 20 August, 2014; originally announced August 2014.

Comments: 7pages, 12figures, SPIE Astronomical Telescopes and Instrumentation 2014, Montreal, Quebec, Canada. appears as Proc. SPIE 9147, Space Telescopes and Instrumentation 2014: Ultraviolet to Gamma Ray