-
Cryogenic growth of tantalum thin films for low-loss superconducting circuits
Authors:
Teun A. J. van Schijndel,
Anthony P. McFadden,
Aaron N. Engel,
Jason T. Dong,
Wilson J. Yánez-Parreño,
Manisha Parthasarathy,
Raymond W. Simmonds,
Christopher J. Palmstrøm
Abstract:
Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize si…
▽ More
Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize single phase $α$-Ta on several different substrates, which include Al$\mathrm{_2}$O$\mathrm{_3}$(0001), Si(001), Si(111), SiN${_x}$, and GaAs(001). The substrates are actively cooled down to cryogenic temperatures and remain < 20 K during the Ta deposition. X-ray $θ$-2$θ$ diffraction after warming to room temperature indicates the formation of polycrystalline $α$-Ta. The 50 nm $α$-Ta films grown on Al$\mathrm{_2}$O$\mathrm{_3}$(0001) at a substrate manipulator temperature of 7 K have a room temperature resistivity ($\mathrm{ρ_{300 K}}$) of 13.4 $\mathrm{μΩ}$cm, a residual resistivity ratio (RRR) of 17.3 and a superconducting transition temperature (T$_C$) of 4.14 K, which are comparable to bulk values. In addition, atomic force microscopy (AFM) indicates that the film grown at 7 K with an RMS roughness of 0.45 nm was significantly smoother than the one grown at room temperature. Similar properties are found for films grown on other substrates. Results for films grown at higher substrate manipulator temperatures show higher $\mathrm{ρ_{300 K}}$, lower RRR and Tc, and increased $β$-Ta content. Coplanar waveguide resonators with a gap width of 3 $\mathrmμ$m fabricated from cryogenically grown Ta on Si(111) and Al$\mathrm{_2}$O$\mathrm{_3}$(0001) show low power Q$_i$ of 1.9 million and 0.7 million, respectively, indicating polycrystalline $α$-Ta films may be promising for superconducting qubit applications even though they are not fully epitaxial.
△ Less
Submitted 20 May, 2024;
originally announced May 2024.
-
Enhanced mobility of ternary InGaAs quantum wells through digital alloying
Authors:
Jason T. Dong,
Yilmaz Gul,
Aaron N. Engel,
Teun A. J. van Schijndel,
Connor P. Dempsey,
Michael Pepper,
Christopher J. Palmstrøm
Abstract:
High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering withi…
▽ More
High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering within the quantum well and increase the peak 2 K electron mobility to 545,000 cm^2/V s, which is the highest reported mobility for high In content InGaAs quantum wells to the best of the authors' knowledge. Our results demonstrate that the digital alloy approach can be used to increase the mobility of quantum wells in random alloy ternary materials.
△ Less
Submitted 29 March, 2024; v1 submitted 25 March, 2024;
originally announced March 2024.
-
Electronic structure of InSb (001), (110), and (111)B surfaces
Authors:
Jason T. Dong,
Hadass S. Inbar,
Mihir Pendharkar,
Teun A. J. van Schijndel,
Elliot C. Young,
Connor P. Dempsey,
Christopher J. Palmstrøm
Abstract:
The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned n…
▽ More
The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned near the valence band edge. This observed pinning is consistent with a charge neutrality level lying near the valence band maximum. Sb termination was observed to shift the surface Fermi-level position by up to $254 \pm 35$ meV towards the conduction band on the InSb (001) surface and $60 \pm 35$ meV towards the conduction band on the InSb(111)B surface. The surface Sb on the (001) can shift the surface from electron depletion to electron accumulation. We propose the shift in the Fermi-level pinning is due to charge transfer from Sb clusters on the Sb terminated surfaces. Additionally, many sub-gap states were observed for the (111)B (3x1) surface, which are attributed to the disordered nature of this surface. This work demonstrates the tuning of the Fermi-level pinning position of InSb surfaces with Sb termination.
△ Less
Submitted 18 February, 2023;
originally announced February 2023.
-
Amalur: Data Integration Meets Machine Learning
Authors:
Rihan Hai,
Christos Koutras,
Andra Ionescu,
Ziyu Li,
Wenbo Sun,
Jessie van Schijndel,
Yan Kang,
Asterios Katsifodimos
Abstract:
The data needed for machine learning (ML) model training, can reside in different separate sites often termed data silos. For data-intensive ML applications, data silos pose a major challenge: the integration and transformation of data demand a lot of manual work and computational resources. With data privacy and security constraints, data often cannot leave the local sites, and a model has to be…
▽ More
The data needed for machine learning (ML) model training, can reside in different separate sites often termed data silos. For data-intensive ML applications, data silos pose a major challenge: the integration and transformation of data demand a lot of manual work and computational resources. With data privacy and security constraints, data often cannot leave the local sites, and a model has to be trained in a decentralized manner. In this work, we present a vision on how to bridge the traditional data integration (DI) techniques with the requirements of modern machine learning. We explore the possibilities of utilizing metadata obtained from data integration processes for improving the effectiveness and efficiency of ML models. We analyze two common use cases over data silos, feature augmentation and federated learning. Bringing data integration and machine learning together, we highlight the new research opportunities from the aspects of systems, representations, factorized learning and federated learning.
△ Less
Submitted 1 March, 2023; v1 submitted 19 May, 2022;
originally announced May 2022.
