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Highly Uniform Thermally Undercut Silicon Photonic Devices in a 300 mm CMOS Foundry Process
Authors:
Robert Parsons,
Kaylx Jang,
Yuyang Wang,
Asher Novick,
A. Matthew Smith,
Christopher C. Tison,
Yonas Gebregiorgis,
Venkatesh Deenadayalan,
Matthew van Niekerk,
Lewis Carpenter,
Tat Ngai,
Gerald Leake,
Daniel Coleman,
Xiang Meng,
Stefan Preble,
Michael L. Fanto,
Keren Bergman,
Anthony Rizzo
Abstract:
Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to fabrication variations and operational temperature swings. However, thermal tuning to compensate for fabrication and operational temperature variations can result in pr…
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Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to fabrication variations and operational temperature swings. However, thermal tuning to compensate for fabrication and operational temperature variations can result in prohibitive power consumption, challenging the scalability of energy-efficient photonic integrated circuits (PICs). In this work, we develop and demonstrate a wafer-scale thermal undercut process in a 300 mm complementary metal oxide semiconductor (CMOS) foundry that dramatically improves the thermal isolation of thermo-optic devices by selectively removing substrate material beneath the waveguides and resonators. This approach significantly reduces the power required for thermal tuning across multiple device architectures, achieving almost a 5$\times$ improvement in tuning efficiency in a state-of-the-art 4.5 $μ$m radius microdisk modulator and a 40$\times$ improvement in efficiency for a MZI phase shifter. To the best of the authors' knowledge, we demonstrate the first wafer-scale comparison of non-undercut and undercut silicon photonic devices using comprehensive wafer-scale measurements across 64 reticles of a 300 mm silicon-on-insulator (SOI) wafer. Further, we demonstrate a comprehensive wafer-scale analysis of the influence of undercut trench opening geometry on device tuning efficiency. Notably, we observe highly uniform performance across the full 300 mm wafer for multiple device types, emphasizing that our process can be scaled to large-scale photonic circuits with high yield. These results open new opportunities for large-scale integrated photonic circuits using thermo-optic devices, paving the way for scalable, low-power silicon photonic systems.
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Submitted 6 June, 2025; v1 submitted 11 March, 2025;
originally announced March 2025.
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Low-Crosstalk, Silicon-Fabricated Optical Waveguides for Laser Delivery to Matter Qubits
Authors:
Clayton L. Craft,
Nicholas J. Barton,
Andrew C. Klug,
Kenneth Scalzi,
Ian Wildemann,
Pramod Asagodu,
Joseph D. Broz,
Nikola L. Porto,
Michael Macalik,
Anthony Rizzo,
Garrett Percevault,
Christopher C. Tison,
A. Matthew Smith,
Michael L. Fanto,
James Schneeloch,
Erin Sheridan,
Dylan Heberle,
Andrew Brownell,
Vijay S. S. Sundaram,
Venkatesh Deenadayalan,
Matthew van Niekerk,
Evan Manfreda-Schulz,
Gregory A. Howland,
Stefan F. Preble,
Daniel Coleman
, et al. (8 additional authors not shown)
Abstract:
Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS foundry-produced, micro-fabricated silicon nitride (Si3N4) optical waveguide for addressing a chain of eight, unequally-spaced trapped barium ions with crosstalk compatib…
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Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS foundry-produced, micro-fabricated silicon nitride (Si3N4) optical waveguide for addressing a chain of eight, unequally-spaced trapped barium ions with crosstalk compatible with scalable quantum information processing. The crosstalk mitigation techniques incorporated into the chip design result in a reduction of the measured optical field by at least 50.8(1.3) dB between adjacent waveguide outputs near 650 nm and similar behavior for devices designed for 493 nm and 585 nm. The waveguide outputs near 650 nm, along with a global laser near 493 nm were used to laser-cool a chain of eight barium-138 ions, and a camera imaged the resulting fluorescence at 493 nm.
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Submitted 27 June, 2024; v1 submitted 25 June, 2024;
originally announced June 2024.
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Massively Scalable Wavelength Diverse Integrated Photonic Linear Neuron
Authors:
Matthew van Niekerk,
Anthony Rizzo,
Hector Rubio Rivera,
Gerald Leake,
Daniel Coleman,
Christopher Tison,
Michael Fanto,
Keren Bergman,
Stefan Preble
Abstract:
As computing resource demands continue to escalate in the face of big data, cloud-connectivity and the internet of things, it has become imperative to develop new low-power, scalable architectures. Neuromorphic photonics, or photonic neural networks, have become a feasible solution for the physical implementation of efficient algorithms directly on-chip. This application is primarily due to the li…
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As computing resource demands continue to escalate in the face of big data, cloud-connectivity and the internet of things, it has become imperative to develop new low-power, scalable architectures. Neuromorphic photonics, or photonic neural networks, have become a feasible solution for the physical implementation of efficient algorithms directly on-chip. This application is primarily due to the linear nature of light and the scalability of silicon photonics, specifically leveraging the wide-scale complementary metal-oxide-semiconductor (CMOS) manufacturing infrastructure used to fabricate microelectronics chips. Current neuromorphic photonic implementations stem from two paradigms: wavelength coherent and incoherent. Here, we introduce a novel architecture that supports coherent and incoherent operation to increase the capability and capacity of photonic neural networks with a dramatic reduction in footprint compared to previous demonstrations. As a proof-of-principle, we experimentally demonstrate simple addition and subtraction operations on a foundry-fabricated silicon photonic chip. Additionally, we experimentally validate an on-chip network to predict the logical 2-bit gates AND, OR, and XOR to accuracies of $96.8\%, 99\%,$ and $98.5\%$, respectively. This architecture is compatible with highly wavelength parallel sources, enabling massively scalable photonic neural networks.
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Submitted 25 August, 2022; v1 submitted 11 May, 2022;
originally announced May 2022.
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Two-dimensional extreme skin depth engineering for CMOS photonics
Authors:
Matthew van Niekerk,
Saman Jahani,
Justin Bickford,
Pak Cho,
Stephen Anderson,
Gerald Leake,
Daniel Coleman,
Michael L. Fanto,
Christopher C. Tison,
Gregory A. Howland,
Zubin Jacob,
Stefan F. Preble
Abstract:
Extreme skin depth engineering (e-skid) can be applied to integrated photonics to manipulate the evanescent field of a waveguide. Here we demonstrate that e-skid can be implemented in two directions in order to deterministically engineer the evanescent wave allowing for dense integration with enhanced functionalities. In particular, by increasing the skin depth, we enable the creation of large gap…
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Extreme skin depth engineering (e-skid) can be applied to integrated photonics to manipulate the evanescent field of a waveguide. Here we demonstrate that e-skid can be implemented in two directions in order to deterministically engineer the evanescent wave allowing for dense integration with enhanced functionalities. In particular, by increasing the skin depth, we enable the creation of large gap, bendless directional couplers with large operational bandwidth. Here we experimentally validate two-dimensional e-skid for integrated photonics in a CMOS photonics foundry and demonstrate strong coupling with a gap of 1.44 μm.
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Submitted 9 December, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
