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Differentiating anomalous and topological Hall effects using first-order reversal curve measurements
Authors:
Gregory M. Stephen,
Ryan T. Van Haren,
Vinay Sharma,
Lixuan Tai,
Bingqian Dai,
Hang Chi,
Kang L. Wang,
Aubrey T. Hanbicki,
Adam L. Friedman
Abstract:
Next generation magnetic memories rely on novel magnetic phases for information storage. Novel spin textures such as skyrmions provide one possible avenue forward due to their topological protection and controllability via electric fields. However, the common signature of these spin textures, the topological Hall effect (THE), can be mimicked by other trivial effects. Competing anomalous Hall effe…
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Next generation magnetic memories rely on novel magnetic phases for information storage. Novel spin textures such as skyrmions provide one possible avenue forward due to their topological protection and controllability via electric fields. However, the common signature of these spin textures, the topological Hall effect (THE), can be mimicked by other trivial effects. Competing anomalous Hall effect (AHE) components can produce a peak in the Hall voltage similar to that of the THE, making clear identification of the THE difficult. By applying the first-order reversal curve (FORC) technique to the Hall effect in candidate topological Hall systems we can clearly distinguish between the THE and AHE. This technique allows for quantitative investigation of the THE and AHE in magnetic materials and heterostructures with topologically non-trivial spin textures. We demonstrate the technique and apply it to several examples.
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Submitted 1 May, 2025;
originally announced May 2025.
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Direct Visualization of Relativistic Quantum Scars
Authors:
Zhehao Ge,
Anton M. Graf,
Joonas Keski-Rahkonen,
Sergey Slizovskiy,
Peter Polizogopoulos,
Takashi Taniguchi,
Kenji Watanabe,
Ryan Van Haren,
David Lederman,
Vladimir I. Fal'ko,
Eric J. Heller,
Jairo Velasco Jr
Abstract:
Quantum scars refer to eigenstates with enhanced probability density along unstable classical periodic orbits (POs). First predicted 40 years ago, scars are special eigenstates that counterintuitively defy ergodicity in quantum systems whose classical counterpart is chaotic. Despite the importance and long history of scars, their direct visualization in quantum systems remains an open field. Here…
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Quantum scars refer to eigenstates with enhanced probability density along unstable classical periodic orbits (POs). First predicted 40 years ago, scars are special eigenstates that counterintuitively defy ergodicity in quantum systems whose classical counterpart is chaotic. Despite the importance and long history of scars, their direct visualization in quantum systems remains an open field. Here we demonstrate that, by using an in-situ graphene quantum dot (GQD) creation and wavefunction mapping technique, quantum scars are imaged for Dirac electrons with nanometer spatial resolution and meV energy resolution with a scanning tunneling microscope. Specifically, we find enhanced probability densities in the form of lemniscate-shaped and streak-like patterns within our stadium-shaped GQDs. Both features show equal energy interval recurrence, consistent with predictions for relativistic quantum scars. By combining classical and quantum simulations, we demonstrate that the observed patterns correspond to two unstable POs that exist in our stadium-shaped GQD, thus proving they are both quantum scars. In addition to providing the first unequivocal visual evidence of quantum scarring, our work offers insight into the quantum-classical correspondence in relativistic chaotic quantum systems and paves the way to experimental investigation of other recently proposed scarring species such as perturbation-induced scars, chiral scars, and antiscarring.
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Submitted 16 September, 2024;
originally announced September 2024.
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Suppressed weak anti-localization in topological insulator - antiferromagnetic insulator (BiSb)$_2$Te$_3$ - MnF$_2$ thin film bilayers
Authors:
Ryan Van Haren,
David Lederman
Abstract:
Thin films of the topological insulator (BiSb)$_2$Te$_3$ oriented along the [0001] direction were grown via molecular beam epitaxy on substrates of Al$_2$O$_3$ (0001) and MgF$_2$ (110) single crystals, as well as on an epitaxial thin film of the antiferromagnetic insulator MnF$_2$ (110). Magnetoconductivity measurements of these samples showed close proximity of the Fermi level to the Dirac point…
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Thin films of the topological insulator (BiSb)$_2$Te$_3$ oriented along the [0001] direction were grown via molecular beam epitaxy on substrates of Al$_2$O$_3$ (0001) and MgF$_2$ (110) single crystals, as well as on an epitaxial thin film of the antiferromagnetic insulator MnF$_2$ (110). Magnetoconductivity measurements of these samples showed close proximity of the Fermi level to the Dirac point and weak antilocalization at low temperature that was partially suppressed in the sample grown on the MnF$_2$ layer. The magnetoconductivity data were fit to a model that describes the quantum corrections to the conductivity for the Dirac surface state of a 3-dimensional topological insulator, from which values of the Fermi velocity and the phase coherence length of the surface state charge carriers were derived. The magnetoconductivity of the (BiSb)$_2$Te$_3$ - MnF$_2$ bilayer samples were fit to a model describing the crossover from weak antilocalization to weak localization due to magnetic doping. The results are consistent with the opening of an energy gap at the Dirac point in the (BiSb)$_2$Te$_3$ due to magnetic proximity interactions of the topological surface states with the antiferromagnetic MnF$_2$ insulator.
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Submitted 18 March, 2024; v1 submitted 5 March, 2024;
originally announced March 2024.
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Emergent Magnetic Phases and Piezomagnetic Effects in Mn$_x$Ni$_{1-x}$F$_2$ Thin Film Alloys
Authors:
Ryan Van Haren,
Nessa Hald,
David Lederman
Abstract:
The effect of random competing single-ion anisotropies in antiferromagnets was studied using epitaxial Mn$_x$Ni$_{1-x}$F$_2$ antiferromagnetic thin film alloys grown via molecular beam epitaxy. The crystal structure of this material is tetragonal for all values of $x$, and the Mn sites have a magnetic easy axis single-ion anisotropy while the Ni sites have an easy plane anisotropy perpendicular to…
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The effect of random competing single-ion anisotropies in antiferromagnets was studied using epitaxial Mn$_x$Ni$_{1-x}$F$_2$ antiferromagnetic thin film alloys grown via molecular beam epitaxy. The crystal structure of this material is tetragonal for all values of $x$, and the Mn sites have a magnetic easy axis single-ion anisotropy while the Ni sites have an easy plane anisotropy perpendicular to the Mn easy axis. Crystallographic and magnetization measurements demonstrated that the thin film alloys were homogeneously mixed and did not phase-separate into their constituent parts. Pure MnF$_2$ thin films epitaxially grown on MgF$_2$ exhibited compressive strain along all three crystallographic axes which resulted in piezomagnetic effects. The piezomagnetism disappeared if the film was grown on a (MnNi)F$_2$ graded buffer layer. A mean-field theory fit to the transition temperature as a function of the Mn concentration $x$, which takes into account piezomagnetic effects, gave a magnetic exchange constant between Mn and Ni ions of $J_{\text{MnNi}} = 0.305 \pm 0.003$~meV. Mean-field theory calculations also predicted the existence of an oblique antiferromagnetic phase in the Mn$_x$Ni$_{1-x}$F$_2$ alloy which agreed with the experimental data. A magnetic phase diagram for Mn$_x$Ni$_{1-x}$F$_2$ thin film alloys was constructed and showed evidence for the existence of two unique magnetic phases, in addition to the ordinary antiferromagnetic and paramagnetic phases: an oblique antiferromagnetic phase, and an emergent magnetic phase proposed to be either a magnetic glassy phase or a helical phase. The phase diagram is quantitatively different from that of Fe$_x$Ni$_{1-x}$F$_2$ because of the much larger single-ion anisotropy of Fe$^{2+}$ compared to Mn$^{2+}$.
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Submitted 7 September, 2023; v1 submitted 7 June, 2023;
originally announced June 2023.
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Surface state mediated ferromagnetism in Mn$_{0.14}$Bi$_{1.86}$Te$_3$ thin films
Authors:
Ryan Van Haren,
Toyanath Joshi,
David Lederman
Abstract:
A spontaneous ferromagnetic moment can be induced in Bi$_{2}$Te$_{3}$ thin films below a temperature T $\approx$ 16 K by the introduction of Mn dopants. We demonstrate that films grown via molecular beam epitaxy with the stoichiometry Mn$_{0.14}$Bi$_{1.86}$Te$_3$ maintain the crystal structure of pure Bi$_{2}$Te$_{3}$. The van der Waals nature of inter-layer forces in the Mn$_{0.14}$Bi$_{1.86}$Te…
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A spontaneous ferromagnetic moment can be induced in Bi$_{2}$Te$_{3}$ thin films below a temperature T $\approx$ 16 K by the introduction of Mn dopants. We demonstrate that films grown via molecular beam epitaxy with the stoichiometry Mn$_{0.14}$Bi$_{1.86}$Te$_3$ maintain the crystal structure of pure Bi$_{2}$Te$_{3}$. The van der Waals nature of inter-layer forces in the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ crystal causes lattice mismatch with the underlayer to have a limited effect on the resulting crystal structure, as we demonstrate by thin film growth on tetragonal MgF$_{2}$ (110) and NiF$_{2}$ (110). Electronic transport and magnetic moment measurements show that the ferromagnetic moment of the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ thin films is enhanced as the Fermi level moves from the bulk conduction band and towards the bulk band gap, suggesting that electronic surface states play an important role in mediating the ferromagnetic order. Ferromagnetic Mn$_{0.14}$Bi$_{1.86}$Te$_3$/antiferromagnetic NiF$_{2}$ bilayers show evidence that the ferromagnetic moment of the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ film is suppressed, suggesting the existence of an interface effect between the two magnetic layers.
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Submitted 24 January, 2023; v1 submitted 31 August, 2022;
originally announced September 2022.
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VOEvent Standard for Fast Radio Bursts
Authors:
Emily Petroff,
Leon Houben,
Keith Bannister,
Sarah Burke-Spolaor,
Jim Cordes,
Heino Falcke,
Ronald van Haren,
Aris Karastergiou,
Michael Kramer,
Casey Law,
Joeri van Leeuwen,
Duncan Lorimer,
Oscar Martinez-Rubi,
Jörg Rachen,
Laura Spitler,
Amanda Weltman
Abstract:
Fast radio bursts are a new class of transient radio phenomena currently detected as millisecond radio pulses with very high dispersion measures. As new radio surveys begin searching for FRBs a large population is expected to be detected in real-time, triggering a range of multi-wavelength and multi-messenger telescopes to search for repeating bursts and/or associated emission. Here we propose a m…
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Fast radio bursts are a new class of transient radio phenomena currently detected as millisecond radio pulses with very high dispersion measures. As new radio surveys begin searching for FRBs a large population is expected to be detected in real-time, triggering a range of multi-wavelength and multi-messenger telescopes to search for repeating bursts and/or associated emission. Here we propose a method for disseminating FRB triggers using Virtual Observatory Events (VOEvents). This format was developed and is used successfully for transient alerts across the electromagnetic spectrum and for multi-messenger signals such as gravitational waves. In this paper we outline a proposed VOEvent standard for FRBs that includes the essential parameters of the event and where these parameters should be specified within the structure of the event. An additional advantage to the use of VOEvents for FRBs is that the events can automatically be ingested into the FRB Catalogue (FRBCAT) enabling real-time updates for public use. We welcome feedback from the community on the proposed standard outlined below and encourage those interested to join the nascent working group forming around this topic.
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Submitted 23 October, 2017;
originally announced October 2017.
