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Single-shot readout of an electron spin in silicon
Authors:
Andrea Morello,
Jarryd J. Pla,
Floris A. Zwanenburg,
Kok W. Chan,
Hans Huebl,
Mikko Mottonen,
Christopher D. Nugroho,
Changyi Yang,
Jessica A. van Donkelaar,
Andrew D. C. Alves,
David N. Jamieson,
Christopher C. Escott,
Lloyd C. L. Hollenberg,
Robert G. Clark,
Andrew S. Dzurak
Abstract:
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit…
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The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.
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Submitted 24 May, 2010; v1 submitted 13 March, 2010;
originally announced March 2010.
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Probe and Control of the Reservoir Density of States in Single-Electron Devices
Authors:
M. Mottonen,
K. Y. Tan,
K. W. Chan,
F. A. Zwanenburg,
W. H. Lim,
C. C. Escott,
J. -M. Pirkkalainen,
A. Morello,
C. Yang,
J. A. van Donkelaar,
A. D. C. Alves,
D. N. Jamieson,
L. C. L. Hollenberg,
A. S. Dzurak
Abstract:
We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window i…
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We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.
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Submitted 5 October, 2009;
originally announced October 2009.
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Strategies for triple-donor devices fabricated by ion implantation
Authors:
Jessica A. Van Donkelaar,
Andrew D. Greentree,
Lloyd C. L. Hollenberg,
David N. Jamieson
Abstract:
Triple donor devices have the potential to exhibit adiabatic tunneling via the CTAP (Coherent Tunneling Adiabatic Passage) protocol which is a candidate transport mechanism for scalable quantum computing. We examine theoretically the statistics of dopant placement using counted ion implantation by employing an analytical treatment of CTAP transport properties under hydrogenic assumptions. We det…
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Triple donor devices have the potential to exhibit adiabatic tunneling via the CTAP (Coherent Tunneling Adiabatic Passage) protocol which is a candidate transport mechanism for scalable quantum computing. We examine theoretically the statistics of dopant placement using counted ion implantation by employing an analytical treatment of CTAP transport properties under hydrogenic assumptions. We determine theoretical device yields for proof of concept devices for different implant energies. In particular, we determine a significant theoretical device yield (~80%) for 14keV phosphorus in silicon with nominal 20nm spacing.
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Submitted 16 June, 2008;
originally announced June 2008.
