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Ferroelectric imprint in annealed Bi0.9La0.1Fe0.9Mn0.1O3 thin films
Authors:
T. T. Carvalho,
F. G. Figueiras,
M. P. F. Garcia,
A. M. Pereira,
J. R. A. Fernandes,
J. Perez de la Cruz,
S. M. S. Pereira,
P. B. Tavares,
A. Almeida,
J. Agostinho Moreira
Abstract:
The present work reports the study of the optimized processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized silicon substrates. The combination of deposition at relatively low substrate temperature followed by adequate ex situ annealing leads to thin films with smooth surface morphology and the formation of a high-quality monophasic layer, with the…
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The present work reports the study of the optimized processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized silicon substrates. The combination of deposition at relatively low substrate temperature followed by adequate ex situ annealing leads to thin films with smooth surface morphology and the formation of a high-quality monophasic layer, with the (100)c preferable orientation. The annealed films show ferroelectric imprint.
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Submitted 21 March, 2016;
originally announced March 2016.
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Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films
Authors:
D. A. Mota,
Y. Romaguera Barcelay,
A. M. R. Senos,
C. M. Fernandes,
P. B. Tavares,
I. T. Gomes,
P. Sá,
L. Fernandes,
B. G. Almeida,
F. Figueiras,
P. Mirzadeh Vaghefi,
V. S. Amaral,
A. Almeida,
J. Pérez de la Cruz,
J. Agostinho Moreira
Abstract:
Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology characterized at room temperature. Magnetic and electric transport properties of the as-processed thin films reveal an abnormal behavior in the temperature dependent…
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Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology characterized at room temperature. Magnetic and electric transport properties of the as-processed thin films reveal an abnormal behavior in the temperature dependent magnetization M(T) below the antiferrodistortive STO phase transition (TSTO) and also an anomaly in the magnetoresistance and electrical resistivity close to the same temperature. Up to 100 nm LSMO thin films, an in-excess magnetization and pronounced changes in the coercivity are evidenced, achieved through the interface-mediated magnetoelastic coupling with antiferrodistortive domain wall movement occurring below TSTO. Contrarily, for thicker LSMO thin films, above 100 nm, an in-defect magnetization is observed. This reversed behavior can be understood within the emergence in the upper layer of the film, observed by high resolution transmission electron microscopy, of a branched structure needed to relax elastic energy stored in the film which leads to randomly oriented magnetic domain reconstructions. For enough high-applied magnetic fields, as thermodynamic equilibrium is reached, a fully suppression of the anomalous magnetization occurs, wherein the temperature dependence of the magnetization starts to follow the expected Brillouin behavior.
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Submitted 17 February, 2014;
originally announced February 2014.
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Structural, electrical and magnetic properties of magnetoelectric GdMnO3 thin films prepared by sol-gel method
Authors:
Y. Romaguera-Barcelay,
J. Agostinho Moreira,
A. Almeida,
P. B. Tavares,
J. Pérez de la Cruz
Abstract:
In this work, we analysed GdMnO3 magnetoelectric thin films prepared by a general sol-gel method. The film formation temperature is analysed by termogravimetric analysis, while the lattice parameters of the Pbnm orthorhombic films are determined from the analysis of the x-ray spectra. The x-ray results also reveal that GdMnO3 films are under compression along the b axis. The lattice dynamic analys…
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In this work, we analysed GdMnO3 magnetoelectric thin films prepared by a general sol-gel method. The film formation temperature is analysed by termogravimetric analysis, while the lattice parameters of the Pbnm orthorhombic films are determined from the analysis of the x-ray spectra. The x-ray results also reveal that GdMnO3 films are under compression along the b axis. The lattice dynamic analysis carried out by Raman spectroscopy confirms the formation of films with a Pbnm orthorhombic structure. Moreover, the analysis of the Raman spectra suggests that besides film-substrate interaction, texture and grain size influence can alters lattice dynamics relative to bulk ones. Magnetic measurements shows that the films response is different of the observed in ceramic and single crystal; mainly, in the shape and temperature where the transitions taking place. The magnetic study also reveals that GdMnO3 films are paramagnetic above 80 K, showing a ferromagnetic response at low temperatures (T=<15 K). The dielectric analysis carried out in the 850C annealed films shows the formation of a relaxation process at low temperature, which is associated with a polaronic process. Moreover, it is also observed a small anomaly at T~27 K that might be related with the magnetic transition taking place in this temperature range.
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Submitted 27 September, 2013;
originally announced September 2013.
