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Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions
Authors:
J. Bermejo-Ortiz,
G. Krizman,
R. Jakiela,
Z. Khosravizadeh,
M. Hajlaoui,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Weyl and Dirac relativistic fermions are ubiquitous in topological matter. Their relativistic character enables high energy physics phenomena like the chiral anomaly to occur in solid state, which allows to experimentally probe and explore fundamental relativistic theories. Here we show that on smooth interfaces between a trivial and a topological material, massless Weyl and massive Dirac fermions…
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Weyl and Dirac relativistic fermions are ubiquitous in topological matter. Their relativistic character enables high energy physics phenomena like the chiral anomaly to occur in solid state, which allows to experimentally probe and explore fundamental relativistic theories. Here we show that on smooth interfaces between a trivial and a topological material, massless Weyl and massive Dirac fermions intrinsically coexist. The emergence of the latter, known as Volkov-Pankratov states, is directly revealed by magneto-optical spectroscopy, evidencing that their energy spectrum is perfectly controlled by the smoothness of topological interface. Simultaneously, we reveal the optical absorption of the zero-energy chiral Weyl state, whose wavefunction is drastically transformed when the topological interface is smooth. Artificial engineering of the topology profile thus provides a novel textbook system to explore the rich relativistic energy spectra in condensed matter heterostructures.
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Submitted 19 July, 2022;
originally announced July 2022.
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Fermi level tuning and band alignment in Mn doped InAs/GaSb
Authors:
Logan Riney,
Joaquin Bermejo-Ortiz,
Gauthier Krizman,
Seul-Ki Bac,
Jiashu Wang,
Maksym Zhukovskyi,
Tatyana Orlova,
Louis Anne de Vaulchier,
Yves Guldner,
Roland Winkler,
Jacek K. Furdyna,
Xinyu Liu,
Badih A. Assaf
Abstract:
InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band ali…
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InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.
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Submitted 29 November, 2021;
originally announced November 2021.
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Miniband engineering and topological phase transitions in topological - normal insulator superlattices
Authors:
G. Krizman,
B. A. Assaf,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Periodic stacking of topologically trivial and non-trivial layers with opposite symmetry of the valence and conduction bands induces topological interface states that, in the strong coupling limit, hybridize both across the topological and normal insulator layers. Using band structure engineering, such superlattices can be effectively realized using the IV-VI lead tin chalcogenides. This leads to…
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Periodic stacking of topologically trivial and non-trivial layers with opposite symmetry of the valence and conduction bands induces topological interface states that, in the strong coupling limit, hybridize both across the topological and normal insulator layers. Using band structure engineering, such superlattices can be effectively realized using the IV-VI lead tin chalcogenides. This leads to emergent minibands with a tunable topology as demonstrated both by theory and experiments. The topological minibands are proven by magneto-optical spectroscopy, revealing Landau level transitions both at the center and edges of the artificial superlattice mini Brillouin zone. Their topological character is identified by the topological phase transitions within the minibands observed as a function of temperature. The critical temperature of this transition as well as the miniband gap and miniband width can be precisely controlled by the layer thicknesses and compositions. This witnesses the generation of a new fully tunable quasi-3D topological state that provides a template for realization of magnetic Weyl semimetals and other strongly interacting topological phases.
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Submitted 30 May, 2021;
originally announced May 2021.
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Determination of the crystal field splitting energy in Cd3As2 using magnetooptics
Authors:
G. Krizman,
T. Schumann,
S. Tchoumakov,
B. A. Assaf,
S. Stemmer,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy…
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Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy. By combining angular dependent cyclotron resonance with Landau level spectroscopy measurements in the Faraday geometry, we determine that δ is positive and equal to 15+/-5 meV in Cd3As2. Our results lead to a more accurate knowledge of the details of the band structure of this Dirac semimetal such as the position its Dirac nodes in momentum space and their splitting into Weyl nodes under a magnetic field.
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Submitted 2 October, 2019;
originally announced October 2019.
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Dirac parameters and topological phase diagram of Pb1-xSnxSe from magneto-spectroscopy
Authors:
G. Krizman,
B. A. Assaf,
T. Phuphachong,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Pb1-xSnxSe hosts 3D massive Dirac fermions across the entire composition range for which the crystal structure is cubic. In this work, we present a comprehensive experimental mapping of the 3D band structure parameters of Pb1-xSnxSe as a function of composition and temperature. We cover a parameter space spanning the band inversion that yields its topological crystalline insulator phase. A non-clo…
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Pb1-xSnxSe hosts 3D massive Dirac fermions across the entire composition range for which the crystal structure is cubic. In this work, we present a comprehensive experimental mapping of the 3D band structure parameters of Pb1-xSnxSe as a function of composition and temperature. We cover a parameter space spanning the band inversion that yields its topological crystalline insulator phase. A non-closure of the energy gap is evidenced in the vicinity of this phase transition. Using magnetooptical Landau level spectroscopy, we determine the energy gap, Dirac velocity, anisotropy factor and topological character of Pb1-xSnxSe epilayers grown by molecular beam epitaxy on BaF2 (111). Our results are evidence that Pb1-xSnxSe is a model system to study topological phases and the nature of the phase transition.
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Submitted 24 October, 2018;
originally announced October 2018.
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Avoided level crossing at the magnetic field induced topological phase transition due to spin-orbital mixing
Authors:
G. Krizman,
B. A. Assaf,
M. Orlita,
T. Phuphachong,
G. Bauer,
G. Springholz,
G. Bastard,
R. Ferreira,
L. A. de Vaulchier,
Y. Guldner
Abstract:
In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level spectroscopy on the topological crystalline insulator Pb1-xSnxSe, we demonstrate that such a gap closure does not occur, and an avoided crossing is observed as the magnet…
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In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level spectroscopy on the topological crystalline insulator Pb1-xSnxSe, we demonstrate that such a gap closure does not occur, and an avoided crossing is observed as the magnetic field is swept through the critical field. We attribute this anticrossing to orbital parity and spin mixing of the N=0 levels. Concurrently, we observe no gap closure at the topological phase transition versus temperature suggesting that the anticrossing is a generic property of topological phase transitions.
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Submitted 9 August, 2018;
originally announced August 2018.
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Tunable Dirac interface states in topological superlattices
Authors:
G. Krizman,
B. A. Assaf,
T. Phuphachong,
G. Bauer,
G. Springholz,
G. Bastard,
R. Ferreira,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the m…
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Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the massless Dirac states that occur at material surfaces. In this work, we experimentally and theoretically introduce a platform where this hybridization can be continuously tuned: the Pb1-xSnxSe topological superlattice. In this system, topological Dirac states occur at the interfaces between a topological crystalline insulator Pb1-xSnxSe and a trivial insulator, realized in the form of topological quantum wells (TQW) epitaxially stacked on top of each other. Using magnetooptical transmission spectroscopy on high quality MBE grown Pb1-xSnxSe superlattices, we show that the penetration depth of the TQW interface states and therefore their Dirac mass is continuously tunable with temperature. This presents a new pathway to engineer the Dirac mass of topological systems and paves the way towards the realization of emergent quantum states of matter using Pb1-xSnxSe topological superlattices.
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Submitted 9 August, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials
Authors:
B. A. Assaf,
T. Phuphachong,
E. Kampert,
V. V. Volobuev,
P. S. Mandal,
J. Sánchez-Barriga,
O. Rader,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when…
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Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when the system becomes trivial. In a topological material, the lowest N=0 conduction Landau level disperses down in energy as a function of increasing magnetic field, while the N=0 valence Landau level disperses upwards. This anomalous behavior is shown to be responsible for the observed NLMR. Our work provides an explanation of the outstanding question of NLMR in topological insulators and establishes this effect as a possible hallmark of bulk conduction in topological matter.
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Submitted 11 August, 2017; v1 submitted 6 April, 2017;
originally announced April 2017.
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Massive and massless Dirac fermions in Pb1-xSnxTe topological crystalline insulator probed by magneto-optical absorption
Authors:
B. A. Assaf,
T. Phuphachong,
V. V. Volobuev,
A. Inhofer,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk st…
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Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B^1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.
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Submitted 12 January, 2016; v1 submitted 5 October, 2015;
originally announced October 2015.
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Room temperature broadband coherent terahertz emission induced by dynamical photon drag in graphene
Authors:
J. Maysonnave,
S. Huppert,
F. Wang,
S. Maero,
C. Berger,
W. de Heer,
T. B. Norris,
L. A. De Vaulchier,
S. Dhillon,
J. Tignon,
R. Ferreira,
J. Mangeney
Abstract:
Nonlinear couplings between photons and electrons in new materials give rise to a wealth of interesting nonlinear phenomena. This includes frequency mixing, optical rectification or nonlinear current generation, which are of particular interest for generating radiation in spectral regions that are difficult to access, such as the terahertz gap. Owing to its specific linear dispersion and high elec…
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Nonlinear couplings between photons and electrons in new materials give rise to a wealth of interesting nonlinear phenomena. This includes frequency mixing, optical rectification or nonlinear current generation, which are of particular interest for generating radiation in spectral regions that are difficult to access, such as the terahertz gap. Owing to its specific linear dispersion and high electron mobility at room temperature, graphene is particularly attractive for realizing strong nonlinear effects. However, since graphene is a centrosymmetric material, second-order nonlinearities a priori cancel, which imposes to rely on less attractive third-order nonlinearities. It was nevertheless recently demonstrated that dc-second-order nonlinear currents as well as ultrafast ac-currents can be generated in graphene under optical excitation. The asymmetry is introduced by the excitation at oblique incidence, resulting in the transfer of photon momentum to the electron system, known as the photon drag effect. Here, we show broadband coherent terahertz emission, ranging from about 0.1-4 THz, in epitaxial graphene under femtosecond optical excitation, induced by a dynamical photon drag current. We demonstrate that, in contrast to most optical processes in graphene, the next-nearest-neighbor couplings as well as the distinct electron-hole dynamics are of paramount importance in this effect. Our results indicate that dynamical photon drag effect can provide emission up to 60 THz opening new routes for the generation of ultra-broadband terahertz pulses at room temperature.
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Submitted 25 May, 2014;
originally announced May 2014.
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Barrier breakdown in a multiple quantum well structure
Authors:
A. Gomez,
V. Berger,
N. Pere-Laperne,
L. A. De Vaulchier
Abstract:
We explore a regime of unipolar electronic transport in a multiple quantum well structure with very large current discontinuities - up to five orders of magnitude. Magneto-transport experiments reveal different transport regimes. Quantum well impact ionization shifts the structure from a resistive down state, where the current flows through inter-well quantum tunneling, to a highly conductive up…
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We explore a regime of unipolar electronic transport in a multiple quantum well structure with very large current discontinuities - up to five orders of magnitude. Magneto-transport experiments reveal different transport regimes. Quantum well impact ionization shifts the structure from a resistive down state, where the current flows through inter-well quantum tunneling, to a highly conductive up state. In the latter regime, the current leaks through a barrier suddenly broken down because of an efficient ionization of the first quantum well.
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Submitted 6 November, 2007;
originally announced November 2007.
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Low temperature penetration depth and the effect of quasi-particle scattering measured by millimeter wave transmission in YBaCuO thin films
Authors:
S. Djordjevic,
L. A. de Vaulchier,
N. Bontemps,
J. P. Vieren,
Y. Guldner,
S. Moffat,
J. Preston,
X. Castel,
M. Guilloux-Viry,
A. Perrin
Abstract:
Measurement of the penetration depth as a function of temperature using millimeter wave transmission in the range 130-500GHz are reported for three YBCO thin films. The experiment provides the absolute value for the penetration depth at low temperature: the derivation from the transmission data and the experimental uncertainty are discussed. We find a zero temperature penetration depth of 199+/-…
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Measurement of the penetration depth as a function of temperature using millimeter wave transmission in the range 130-500GHz are reported for three YBCO thin films. The experiment provides the absolute value for the penetration depth at low temperature: the derivation from the transmission data and the experimental uncertainty are discussed. We find a zero temperature penetration depth of 199+/-20nm, 218+/-20nm and 218+/-20nm, for YBCO-50nm/LaAlO3 (pristine), YBCO-130nm/MgO and YBCO-50nm/LaAlO3 (irradiated) respectively. The penetration depth exhibits a different behavior for the three films. In the pristine sample, it shows a clear temperature and frequency dependence, namely the temperature dependence is consistent with a linear variation, whose slope decreases with frequency: this is considered as an evidence for the scattering rate being of the order of the measuring frequency. A two fluids analysis yields 1.7 10^{12} s^{-1}. In the two other samples, the penetration depth does not display any frequency dependence, suggesting a significantly larger scattering rate. The temperature dependence is different in these latter samples. It is consistent with a linear variation for the YBCO/MgO sample, not for the YBCO/LaAlO3 irradiated one, which exhibits a T^2 dependence up to 40K. We have compared our data to the predictions of the d-wave model incorporating resonant scattering and we do not find a satisfactory agreement. However, the large value of the penetration depth at zero Kelvin in the pristine sample is a puzzle and sheds some doubt on a straightforward comparison with the theory of data from thin films, considered as dirty d-wave superconductors.
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Submitted 23 January, 1998;
originally announced January 1998.
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Linear Temperature Variation of the Penetration Depth in YBCO Thin Films
Authors:
L. A. de Vaulchier,
J. P. Vieren,
Y. Guldner,
N. Bontemps,
R. Combescot,
Y. Lemaitre,
J. C. Mage
Abstract:
We have measured the penetration depth $λ(T)$ on $\rm YBa_{2}Cu_{3}O_{7}$ thin films from transmission at 120, 330 and 510~GHz, between 5 and 50~K. Our data yield simultaneously the absolute value and the temperature dependence of $λ(T)$. In high quality films $λ(T)$ exhibits the same linear temperature dependence as single crystals, showing its intrinsic nature, and $λ(0)=1750\,{\rm Å}$. In a l…
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We have measured the penetration depth $λ(T)$ on $\rm YBa_{2}Cu_{3}O_{7}$ thin films from transmission at 120, 330 and 510~GHz, between 5 and 50~K. Our data yield simultaneously the absolute value and the temperature dependence of $λ(T)$. In high quality films $λ(T)$ exhibits the same linear temperature dependence as single crystals, showing its intrinsic nature, and $λ(0)=1750\,{\rm Å}$. In a lower quality one, the more usual $T^2$ dependence is found, and $λ(0)=3600\,{\rm Å}$. This suggests that the $T^2$ variation is of extrinsic origin. Our results put the $d$-wave like interpretation in a much better position.
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Submitted 14 April, 1995;
originally announced April 1995.
