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Defining graphenic crystallites in disordered carbon: moving beyond the platelet model
Authors:
Kate J. Putman,
Nigel A. Marks,
Matthew R. Rowles,
Carla de Tomas,
Jacob W. Martin,
Irene Suarez-Martinez
Abstract:
We develop a picture of graphenic crystallites within disordered carbons that goes beyond the traditional model of graphitic platelets at random orientation. Using large atomistic models containing one million atoms, we redefine the meaning of the quantity La extracted from X-ray diffraction (XRD) patterns. Two complementary approaches are used to measure the size of graphenic crystallites, which…
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We develop a picture of graphenic crystallites within disordered carbons that goes beyond the traditional model of graphitic platelets at random orientation. Using large atomistic models containing one million atoms, we redefine the meaning of the quantity La extracted from X-ray diffraction (XRD) patterns. Two complementary approaches are used to measure the size of graphenic crystallites, which are defined as regions of regularly arranged hexagons. Firstly, we calculate the X-ray diffraction pattern directly from the atomistic coordinates of the structure and analyse them following a typical experimental process. Second, the graphenic crystallites are identified from a direct geometrical approach. By mapping the structure directly, we replace the idealised picture of the crystallite with a more realistic representation of the material and provide a well-defined interpretation for $L_a$ measurements of disordered carbon. A key insight is that the size distribution is skewed heavily towards small fragments, with more than 75% of crystallites smaller than half of $L_a$.
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Submitted 12 December, 2022;
originally announced December 2022.
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Thermal conductivity of bulk and nanoscaled Si/Ge alloys from the Kinetic Collective Model
Authors:
P. Torres,
C. de Tomas,
A. Lopeandia,
X. Cartoixà,
X. Alvarez
Abstract:
Several hitherto unexplained features of thermal conductivity in group IV materials, such as the change in the slope as a function of sample size for pure vs. alloyed samples and the fast decay in thermal conductivity for low impurity concentration, are described in terms of a transition from a collective to kinetic regime in phonon transport. We show that thermal transport in pure bulk silicon sa…
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Several hitherto unexplained features of thermal conductivity in group IV materials, such as the change in the slope as a function of sample size for pure vs. alloyed samples and the fast decay in thermal conductivity for low impurity concentration, are described in terms of a transition from a collective to kinetic regime in phonon transport. We show that thermal transport in pure bulk silicon samples is mainly collective, and that impurity/alloy and boundary scattering are responsible for the destruction of this regime with an associated strong reduction in thermal conductivity, leaving kinetic transport as the only one allowed when those resistive scattering mechanisms are dominant.
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Submitted 3 September, 2015; v1 submitted 4 June, 2015;
originally announced June 2015.
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Thermal conductivity of group-IV Semiconductors from a Kinetic-Collective Model
Authors:
C. de Tomas,
A. Cantarero,
A. F. Lopeandia,
F. X. Alvarez
Abstract:
The thermal conductivity of several diamond-like materials is calculated from a kinetic-collective model. From this approach, a thermal conductivity expression is obtained that includes a transition from a kinetic (free) to a collective (hydrodynamic) behavior of the phonon field. The expression contains only three parameters. Once fitted to natural occurring silicon, the same parameters for the o…
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The thermal conductivity of several diamond-like materials is calculated from a kinetic-collective model. From this approach, a thermal conductivity expression is obtained that includes a transition from a kinetic (free) to a collective (hydrodynamic) behavior of the phonon field. The expression contains only three parameters. Once fitted to natural occurring silicon, the same parameters for the other materials are directly calculated from theoretical relations. The results are in good agreement with experimental data.
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Submitted 2 February, 2014;
originally announced February 2014.
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From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures
Authors:
C. de Tomas,
A. Cantarero,
A. F. Lopeandia,
F. X. Alvarez
Abstract:
We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit exp…
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We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems.
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Submitted 14 February, 2014; v1 submitted 26 October, 2013;
originally announced October 2013.
