Showing 1–5 of 5 results for author: de Kruijf, M

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots

Authors: Edward J. Thomas, Virginia N. Ciriano-Tejel, David F. Wise, Domenic Prete, Mathieu de Kruijf, David J. Ibberson, Grayson M. Noah, Alberto Gomez-Saiz, M. Fernando Gonzalez-Zalba, Mark A. I. Johnson, John J. L. Morton

Abstract: Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and po… ▽ More Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and potential for compatibility with large-scale integration. Here, we demonstrate the integration of 1024 silicon quantum dots with on-chip digital and analogue electronics, all operating below 1 K. A high-frequency analogue multiplexer provides fast access to all devices with minimal electrical connections, enabling characteristic data across the quantum dot array to be acquired in just 5 minutes. We achieve this by leveraging radio-frequency reflectometry with state-of-the-art signal integrity, reaching a minimum integration time of 160 ps. Key quantum dot parameters are extracted by fast automated machine learning routines to assess quantum dot yield and understand the impact of device design. We find correlations between quantum dot parameters and room temperature transistor behaviour that may be used as a proxy for in-line process monitoring. Our results show how rapid large-scale studies of silicon quantum devices can be performed at lower temperatures and measurement rates orders of magnitude faster than current probing techniques, and form a platform for the future on-chip addressing of large scale qubit arrays. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: Main text: 14 pages, 8 figures, 1 table Supplementary: 8 pages, 6 figures

Journal ref: Nat Electron 1 9 (2025)

Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon

Authors: Mathieu de Kruijf, Grayson M. Noah, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to ass… ▽ More Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to assess the local temperature increase produced by an active FET placed in close proximity. We study the impact of both static and dynamic operation regimes. When the FET is operated statically, we find a power budget of 45 nW at 100 nm separation whereas at 216 $μ$m the power budget raises to 150 $μ$W. When operated dynamically, we observe negligible temperature increase for the switch frequencies tested up to 10 MHz. Our work describes a method to accurately map out the available power budget at a distance from a solid-state quantum processor and indicate under which conditions cryoelectronics circuits may allow the operation of hybrid quantum-classical systems. △ Less

Submitted 17 October, 2023; originally announced October 2023.

CMOS on-chip thermometry at deep cryogenic temperatures

Authors: Grayson M. Noah, Thomas Swift, Mathieu de Kruijf, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon o… ▽ More Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon oxide, and the limited cooling power budgets make local on-chip temperature sensing even more important. Here, we report four different methods for on-chip temperature measurements native to complementary metal-oxide-semiconductor (CMOS) industrial fabrication processes. These include secondary and primary thermometry methods and cover conventional thermometry structures used at room temperature as well as methods exploiting phenomena which emerge at cryogenic temperatures, such as superconductivity and Coulomb blockade. We benchmark the sensitivity of the methods as a function of temperature and use them to measure local excess temperature produced by on-chip heating elements. Our results demonstrate thermometry methods that may be readily integrated in CMOS chips with operation from the milliKelivin range to room temperature. △ Less

Submitted 1 August, 2023; originally announced August 2023.

A compact and versatile cryogenic probe station for quantum device testing

Authors: Mathieu de Kruijf, Simon Geyer, Toni Berger, Matthias Mergenthaler, Floris Braakman, Richard J. Warburton, Andreas V. Kuhlmann

Abstract: Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work we present a probe station that can be operated from roo… ▽ More Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work we present a probe station that can be operated from room temperature down to below 2$\,$K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization towards building scalable quantum circuits. △ Less

Submitted 23 December, 2022; originally announced December 2022.

Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning

Authors: B. Severin, D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec, A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M. J. Carballido, S. Svab, A. V. Kuhlmann, F. R. Braakman, S. Geyer, F. N. M. Froning, H. Moon, M. A. Osborne, D. Sejdinovic, G. Katsaros, D. M. Zumbühl, G. A. D. Briggs, N. Ares

Abstract: The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra… ▽ More The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning. △ Less

Submitted 27 July, 2021; originally announced July 2021.