FPGA Innovation Research in the Netherlands: Present Landscape and Future Outlook
Authors:
Nikolaos Alachiotis,
Sjoerd van den Belt,
Steven van der Vlugt,
Reinier van der Walle,
Mohsen Safari,
Bruno Endres Forlin,
Tiziano De Matteis,
Zaid Al-Ars,
Roel Jordans,
António J. Sousa de Almeida,
Federico Corradi,
Christiaan Baaij,
Ana-Lucia Varbanescu
Abstract:
FPGAs have transformed digital design by enabling versatile and customizable solutions that balance performance and power efficiency, yielding them essential for today's diverse computing challenges. Research in the Netherlands, both in academia and industry, plays a major role in developing new innovative FPGA solutions. This survey presents the current landscape of FPGA innovation research in th…
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FPGAs have transformed digital design by enabling versatile and customizable solutions that balance performance and power efficiency, yielding them essential for today's diverse computing challenges. Research in the Netherlands, both in academia and industry, plays a major role in developing new innovative FPGA solutions. This survey presents the current landscape of FPGA innovation research in the Netherlands by delving into ongoing projects, advancements, and breakthroughs in the field. Focusing on recent research outcome (within the past 5 years), we have identified five key research areas: a) FPGA architecture, b) FPGA robustness, c) data center infrastructure and high-performance computing, d) programming models and tools, and e) applications. This survey provides in-depth insights beyond a mere snapshot of the current innovation research landscape by highlighting future research directions within each key area; these insights can serve as a foundational resource to inform potential national-level investments in FPGA technology.
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Submitted 4 February, 2025;
originally announced February 2025.
Single-charge occupation in ambipolar quantum dots
Authors:
A. J. Sousa de Almeida,
A. Marquez Seco,
T. van den Berg,
B. van de Ven,
F. Bruijnes,
S. V. Amitonov,
F. A. Zwanenburg
Abstract:
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and fe…
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We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.
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Submitted 14 January, 2020;
originally announced January 2020.
