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Strongly modulated ultrafast demagnetization and magnetization precession dynamics in ferrimagnetic Gdx(CoFe)1-x alloys via 3d-4f intersublattice exchange coupling
Authors:
Y. Ren,
L. L. Zhang,
X. D. He,
G. J. Wu,
J. W. Gao,
P. Ran,
L. Z. Dan,
T. Wang,
X. W. Zhou,
Z. Liu,
J. Y. Xie,
Q. Y. Jin,
Zongzhi Zhang
Abstract:
Manipulation of the intersublattice interaction strengh (JRE-TM) in rare earth (RE)-transition metal (TM) alloys is a key issue to understand how efficiently the laser-induced angular momentum transfers from 3d to 4f spins and to have a better control of the ultrafast spin dynamics. In this work, the relationships between laser-induced demagnetization process and the intersublattice 3d-4f interact…
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Manipulation of the intersublattice interaction strengh (JRE-TM) in rare earth (RE)-transition metal (TM) alloys is a key issue to understand how efficiently the laser-induced angular momentum transfers from 3d to 4f spins and to have a better control of the ultrafast spin dynamics. In this work, the relationships between laser-induced demagnetization process and the intersublattice 3d-4f interaction for the GdCoFe alloys were systematically studied. The ultrafast two-stage demagnetization process could change into a one-stage mode as the angular momentum transferring channel between 3d and 4f spins is switched off, which could be modulated by JRE-TM. Furthermore, both the effective g-factor and damping constant deduced by the subsequently laser-induced magnetization precession process diverge at the angular momentum compensation point based on the ferromagnetic resonance method with the LLG equations. The results provide an alternative way to efficiently manipulate the ultrafast demagnetization time for practical applications.
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Submitted 29 December, 2020;
originally announced December 2020.
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Length scales and scale-free dynamics of dislocations in dense solid solutions
Authors:
Gábor Péterffy,
Péter D. Ispánovity,
Michael E. Foster,
Xiaowang W. Zhou,
Ryan B. Sills
Abstract:
The fundamental interactions between an edge dislocation and a random solid solution are studied by analyzing dislocation line roughness profiles obtained from molecular dynamics simulations of Fe0.70Ni0.11 Cr0.19 over a range of stresses and temperatures. These roughness profiles reveal the hallmark features of a depinning transition. Namely, below a temperature-dependent critical stress, the dis…
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The fundamental interactions between an edge dislocation and a random solid solution are studied by analyzing dislocation line roughness profiles obtained from molecular dynamics simulations of Fe0.70Ni0.11 Cr0.19 over a range of stresses and temperatures. These roughness profiles reveal the hallmark features of a depinning transition. Namely, below a temperature-dependent critical stress, the dislocation line exhibits roughness in two different length scale regimes which are divided by a so-called correlation length. This correlation length increases with applied stress and at the critical stress (depinning transition or yield stress) formally goes to infinity. Above the critical stress, the line roughness profile converges to that of a random noise field. Motivated by these results, a physical model is developed based on the notion of coherent line bowing over all length scales below the correlation length. Above the correlation length, the solute field prohibits such coherent line bow outs. Using this model, we identify potential gaps in existing theories of solid solution strengthening and show that recent observations of length-dependent dislocation mobilities can be rationalized.
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Submitted 1 October, 2020;
originally announced October 2020.
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Molecular Dynamics Studies of Dislocations in CdTe Crystals from a New Bond Order Potential
Authors:
X. W. Zhou,
D. K. Ward,
B. M. Wong,
F. P. Doty,
J. A. Zimmermana
Abstract:
Cd1-xZnxTe (CZT) crystals are the leading semiconductors for radiation detection, but their application is limited by the high cost of detector-grade materials. High crystal costs primarily result from property non-uniformity that causes low manufacturing yield. While tremendous efforts have been made in the past to reduce Te inclusions / precipitates in CZT, this has not resulted in an anticipate…
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Cd1-xZnxTe (CZT) crystals are the leading semiconductors for radiation detection, but their application is limited by the high cost of detector-grade materials. High crystal costs primarily result from property non-uniformity that causes low manufacturing yield. While tremendous efforts have been made in the past to reduce Te inclusions / precipitates in CZT, this has not resulted in an anticipated improvement in material property uniformity. Moreover, it is recognized that in addition to Te particles, dislocation cells can also cause electric field perturbation and the associated property non-uniformity. Further improvement of the material, therefore, requires that dislocations in CZT crystals be understood and controlled. Here we use a recently developed CZT bond order potential to perform representative molecular dynamics simulations to study configurations, energies, and mobilities of 29 different types of possible dislocations in CdTe (i.e., x = 1) crystals. An efficient method to derive activation free energies and activation volumes of thermally activated dislocation motion will be explored. Our focus gives insight into understanding important dislocations in the material, and gives guidance toward experimental efforts for improving dislocation network structures in CZT crystals.
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Submitted 24 August, 2012;
originally announced August 2012.
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Effects of Cutoff Functions of Tersoff Potentials on Molecular Dynamics Simulations of Thermal Transport
Authors:
X. W. Zhou,
R. E. Jones
Abstract:
Past molecular dynamics studies of thermal transport have predominantly used Stillinger-Weber potentials. As materials continuously shrink, their properties increasingly depend on defect and surface effects. Unfortunately, Stillinger-Weber potentials are best used for diamond-cubic-like bulk crystals. They cannot represent the energies of many metastable phases, nor can they accurately predict the…
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Past molecular dynamics studies of thermal transport have predominantly used Stillinger-Weber potentials. As materials continuously shrink, their properties increasingly depend on defect and surface effects. Unfortunately, Stillinger-Weber potentials are best used for diamond-cubic-like bulk crystals. They cannot represent the energies of many metastable phases, nor can they accurately predict the energetics of defective and surface regions. To study nanostructured materials, where these regions can dominate thermal transport, the accuracy of Tersoff potentials in representing these structures is more desirable. Based upon an analysis of thermal transport in a GaN system, we demonstrate that the cutoff function of the existing Tersoff potentials may lead to problems in determining the thermal conductivity. To remedy this issue, improved cutoff schemes are proposed and evaluated.
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Submitted 23 June, 2012;
originally announced June 2012.
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Towards More Accurate Molecular Dynamics Calculation of Thermal Conductivity. Case Study: GaN Bulk Crystals
Authors:
X. W. Zhou,
S. Aubry,
R. E. Jones,
A. Greenstein,
P. K. Schelling
Abstract:
Significant differences exist among literature for thermal conductivity of various systems computed using molecular dynamics simulation. In some cases, unphysical results, for example, negative thermal conductivity, have been found. Using GaN as an example case and the direct non-equilibrium method, extensive molecular dynamics simulations and Monte Carlo analysis of the results have been carried…
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Significant differences exist among literature for thermal conductivity of various systems computed using molecular dynamics simulation. In some cases, unphysical results, for example, negative thermal conductivity, have been found. Using GaN as an example case and the direct non-equilibrium method, extensive molecular dynamics simulations and Monte Carlo analysis of the results have been carried out to quantify the uncertainty level of the molecular dynamics methods and to identify the conditions that can yield sufficiently accurate calculations of thermal conductivity. We found that the errors of the calculations are mainly due to the statistical thermal fluctuations. Extrapolating results to the limit of an infinite-size system tend to magnify the errors and occasionally lead to unphysical results. The error in bulk estimates can be reduced by performing longer time averages using properly selected systems over a range of sample lengths. If the errors in the conductivity estimates associated with each of the sample lengths are kept below a certain threshold, the likelihood of obtaining unphysical bulk values becomes insignificant. Using a Monte-Carlo approach developed here, we have determined the probability distributions for the bulk thermal conductivities obtained using the direct method. We also have observed a nonlinear effect that can become a source of significant errors. For the extremely accurate results presented here, we predict a [0001] GaN thermal conductivity of 185 $\rm{W/K \cdot m}$ at 300 K, 102 $\rm{W/K \cdot m}$ at 500 K, and 74 $\rm{W/K \cdot m}$ at 800 K. Using the insights obtained in the work, we have achieved a corresponding error level (standard deviation) for the bulk (infinite sample length) GaN thermal conductivity of less than 10 $\rm{W/K \cdot m}$, 5 $\rm{W/K \cdot m}$, and 15 $\rm{W/K \cdot m}$ at 300 K, 500 K, and 800 K respectively.
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Submitted 23 June, 2012;
originally announced June 2012.
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An analytical law for size effects on thermal conductivity of nanostructures
Authors:
X. W. Zhou,
R. E. Reese
Abstract:
The thermal conductivity of a nanostructure is sensitive to its dimensions. A simple analytical scaling law that predicts how conductivity changes with the dimensions of the structure, however, has not been developed. The lack of such a law is a hurdle in "phonon engineering" of many important applications. Here, we report an analytical scaling law for thermal conductivity of nanostructures as a f…
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The thermal conductivity of a nanostructure is sensitive to its dimensions. A simple analytical scaling law that predicts how conductivity changes with the dimensions of the structure, however, has not been developed. The lack of such a law is a hurdle in "phonon engineering" of many important applications. Here, we report an analytical scaling law for thermal conductivity of nanostructures as a function of their dimensions. We have verified the law using very large molecular dynamics simulations.
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Submitted 23 June, 2012;
originally announced June 2012.
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Molecular Dynamics Prediction of Thermal Conductivity of GaN Films and Wires at Realistic Length Scales
Authors:
X. W. Zhou,
R. E. Jones,
S. Aubry
Abstract:
Recent molecular dynamics simulation methods have enabled thermal conductivity of bulk materials to be estimated. In these simulations, periodic boundary conditions are used to extend the system dimensions to the thermodynamic limit. Such a strategy cannot be used for nanostructures with finite dimensions which are typically much larger than it is possible to simulate directly. To bridge the lengt…
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Recent molecular dynamics simulation methods have enabled thermal conductivity of bulk materials to be estimated. In these simulations, periodic boundary conditions are used to extend the system dimensions to the thermodynamic limit. Such a strategy cannot be used for nanostructures with finite dimensions which are typically much larger than it is possible to simulate directly. To bridge the length scales between the simulated and the actual nanostructures, we perform large-scale molecular dynamics calculations of thermal conductivities at different system dimensions to examine a recently developed conductivity vs. dimension scaling theory for both film and wire configurations. We demonstrate that by an appropriate application of the scaling law, reliable interpolations can be used to accurately predict thermal conductivity of films and wires as a function of film thickness or wire radius at realistic length scales from molecular dynamics simulations. We apply this method to predict thermal conductivities for GaN wurtzite nanostructures.
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Submitted 22 June, 2012;
originally announced June 2012.
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Defect formation dynamics during CdTe overlayer growth
Authors:
J. J. Chavez,
D. K. Ward,
B. M. Wong,
F. P. Doty,
J. L. Cruz-Campa,
G. N. Nielson,
V. P. Gupta,
D. Zubia,
J. McClure,
X. W. Zhou
Abstract:
The presence of atomic-scale defects at multilayer interfaces significantly degrades performance in CdTe-based photovoltaic technologies. The ability to accurately predict and understand defect formation mechanisms during overlayer growth is, therefore, a rational approach for improving the efficiencies of CdTe materials. In this work, we utilize a recently developed CdTe bond-order potential (BOP…
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The presence of atomic-scale defects at multilayer interfaces significantly degrades performance in CdTe-based photovoltaic technologies. The ability to accurately predict and understand defect formation mechanisms during overlayer growth is, therefore, a rational approach for improving the efficiencies of CdTe materials. In this work, we utilize a recently developed CdTe bond-order potential (BOP) to enable accurate molecular dynamics (MD) simulations for predicting defect formation during multilayer growth. A detailed comparison of our MD simulations to high-resolution transmission electron microscopy experiments verifies the accuracy and predictive power of our approach. Our simulations further indicate that island growth can reduce the lattice mismatch induced defects. These results highlight the use of predictive MD simulations to gain new insight on defect reduction in CdTe overlayers, which directly addresses efforts to improve these materials.
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Submitted 22 June, 2012;
originally announced June 2012.
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High-fidelity simulations of CdTe vapor deposition from a new bond-order potential-based molecular dynamics method
Authors:
X. W. Zhou,
D. Ward,
B. M. Wong,
F. P. Doty,
J. A. Zimmerman,
G. N. Nielson,
J. L. Cruz-Campa,
V. P. Gupta,
J. E. Granata,
J. J. Chavez,
D. Zubia
Abstract:
CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below the theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth…
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CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below the theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth of CdTe crystals are difficult to explore in experiments. Here we demonstrate the capability of a bond order potential-based molecular dynamics method for predicting the crystalline growth of CdTe films during vapor deposition simulations. Such a method may begin to enable defects generated during vapor deposition of CdTe crystals to be accurately explored.
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Submitted 19 June, 2012;
originally announced June 2012.
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Melt-growth dynamics in CdTe crystals
Authors:
X. W. Zhou,
D. K. Ward,
B. M. Wong,
F. P. Doty
Abstract:
We use a new, quantum-mechanics-based bond-order potential (BOP) to reveal melt-growth dynamics and fine-scale defect formation mechanisms in CdTe crystals. Previous molecular dynamics simulations of semiconductors have shown qualitatively incorrect behavior due to the lack of an interatomic potential capable of predicting both crystalline growth and property trends of many transitional structures…
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We use a new, quantum-mechanics-based bond-order potential (BOP) to reveal melt-growth dynamics and fine-scale defect formation mechanisms in CdTe crystals. Previous molecular dynamics simulations of semiconductors have shown qualitatively incorrect behavior due to the lack of an interatomic potential capable of predicting both crystalline growth and property trends of many transitional structures encountered during the melt $\rightarrow$ crystal transformation. Here we demonstrate successful molecular dynamics simulations of melt-growth in CdTe using a BOP that significantly improves over other potentials on property trends of different phases. Our simulations result in a detailed understanding of defect formation during the melt-growth process. Equally important, we show that the new BOP enables defect formation mechanisms to be studied at a scale level comparable to empirical molecular dynamics simulation methods with a fidelity level approaching quantum-mechanical methods
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Submitted 18 June, 2012;
originally announced June 2012.
